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Vishay Siliconix SIA432DJ-T1-GE3
- Part No.:
- SIA432DJ-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SC-70-6
- Datasheet:
-
SIA432DJ-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 12A PPAK SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:3,133
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Product details
Overview
SIA432DJ-T1-GE3 from Vishay Siliconix is a N-channel 30 V (D-S) TrenchFET® power MOSFET in PowerPAK® SC-70-6L package, delivering RDS(on) = 0.0200 Ω at VGS = 10 V and 0.0240 Ω at VGS = 4.5 V, with 10.1 A continuous drain current at TA = 25 °C, optimized for compact load-switch applications in space-constrained DC/DC and portable power systems.
For engineers reviewing the SIA432DJ-T1-GE3 datasheet, SIA432DJ-T1-GE3 pinout, SIA432DJ-T1-GE3 application, or SIA432DJ-T1-GE3 equivalent, this page provides verified package mapping, thermal resistance values (RthJA = 36 °C/W max), gate charge (Qg = 5.6 nC typ. at 4.5 V), body diode recovery (trr = 16 ns), and validated alternative part options for load-switch design continuity.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching performance: Qg = 5.6 nC (VGS = 4.5 V) and tr/tf = 11/10 ns (VGEN = 4.5 V). Its PowerPAK® SC-70-6L package features exposed-drain thermal pads and leadless construction, enabling high power density without wire bonds.
The device supports logic-level drive (VGS(th) = 1–3 V), operates across -55 to +150 °C junction range, and includes 100 % UIS-tested ruggedness. Its body diode exhibits VSD = 0.8–1.2 V at IS = 5 A and Qrr = 8–15 nC, making it suitable for synchronous rectification and bidirectional current paths in compact regulators.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines safe operating ceiling in 24 V rail and USB PD applications. |
| RDS(on) @ 4.5 V | 0.0240 Ω - Enables <100 mW conduction loss at 9.2 A, critical for battery-powered load switches. |
| ID (TA = 25 °C) | 10.1 A - Continuous current rating under standard FR4 board conditions; sets PCB copper and thermal pad sizing baseline. |
| Qg @ 4.5 V | 5.6 nC - Low gate charge reduces driver power demand and enables efficient operation with microcontroller GPIOs. |
| RthJA (max) | 36 °C/W - Thermal resistance from junction-to-ambient; determines required board copper area for 80 °C/W case-limited derating. |
| trr | 16 ns - Fast body diode reverse recovery time minimizes switching losses in discontinuous conduction mode. |
| VGS(th) | 1–3 V - Guaranteed threshold range ensures reliable turn-on with 3.3 V logic, eliminating need for level-shifting circuitry. |
Pinout & Package
PowerPAK® SC-70-6L is a thermally enhanced, leadless surface-mount package measuring 2.05 mm × 2.05 mm × 0.75 mm (L × W × H), with exposed drain terminals on the bottom side for direct thermal coupling to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 3, 4 | Drain (D) | Three parallel drain terminals connected internally; provide low-inductance, high-current path and primary thermal conduction path to PCB. |
| 2 | Gate (G) | Single gate input; requires <5.6 nC charge for full enhancement; layout must minimize trace inductance to suppress ringing. |
| 5, 6 | Source (S) | Two source terminals; form return path for load current and reference node for gate drive; connect directly to ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 0.0240 Ω RDS(on) at 4.5 V drive while maintaining 30 V breakdown-critical for efficiency in 3.3 V–5 V control domains. |
| 100 % UIS tested | Guarantees ruggedness against unclamped inductive switching events up to IAS = 15.5 A and EAS = 12 mJ-supports reliable operation in motor gate drivers and solenoid controls. |
| PowerPAK® SC-70-6L package | Delivers 3.5 W power dissipation at TA = 25 °C in 4.2 mm² footprint-reduces board area by >50 % vs. SO-8 while maintaining thermal performance. |
| Lead (Pb)-free and Halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC JS709C-meets environmental requirements for consumer, industrial, and medical end equipment. |
Applications
| USB Type-C Port Power Switching | Portable Device Battery Protection |
|---|---|
|
Use Scenario: Controlling VBUS enable/disable in USB-C receptacles with 5 V/3 A capability and overcurrent fault response. IC Role / Device Role / Timing Role: High-side load switch managing power delivery path between upstream source and downstream port controller. Use Value: 0.0240 Ω RDS(on) limits voltage drop to <75 mV at 3 A, preserving VBUS regulation margin; fast tr/tf supports dynamic hot-plug sequencing. |
Use Scenario: Isolating main Li-ion battery from system during deep sleep or fault conditions in wearables and IoT sensors. IC Role / Device Role / Timing Role: Low-quiescent, logic-level-controlled disconnect switch placed between battery anode and PMIC input. Use Value: 1–3 V VGS(th) allows direct drive from MCU GPIO; 10.1 A rating supports peak pulse loads up to 9.2 A without thermal shutdown. |
| DC/DC Converter Input Stage | Industrial Sensor Node Power Gating |
|
Use Scenario: Enabling/disabling input power to buck converters in programmable logic controllers with 24 V supply rails. IC Role / Device Role / Timing Role: Pre-regulator switch protecting downstream converter from input transients and enabling soft-start control. Use Value: 30 V VDS withstands 24 V nominal + 30 % surge; 100 % UIS testing ensures survival during 48 V line faults. |
Use Scenario: Power cycling discrete sensor modules (e.g., temperature, humidity) in battery-operated environmental monitors. IC Role / Device Role / Timing Role: Low-leakage, digitally controlled power gate isolating sensor supply domain from always-on microcontroller domain. Use Value: IDSS ≤ 1 μA at 30 V ensures <100 nA standby leakage per switch; small 2.05 mm × 2.05 mm footprint conserves limited PCB real estate. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load-switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiA440DJ-T1-GE3 | RDS(on) = 0.0158 Ω @ 10 V (lower), but VDS = 30 V same; Qg = 13 nC @ 10 V (higher); same PowerPAK SC-70-6L package. | Better conduction efficiency at high drive voltage; higher gate charge increases driver burden and switching loss in 3.3 V systems. | Select when 10 V gate drive is available and lowest RDS(on) is prioritized over gate drive simplicity. |
| DMN3026LSD-13 | RDS(on) = 0.026 Ω @ 4.5 V (slightly higher); VDS = 30 V; SO-8 package (larger footprint, higher RthJA = 62 °C/W). | Compatible function but requires PCB redesign due to SO-8 footprint and thermal interface differences. | Choose only if legacy SO-8 layout reuse is mandatory and thermal margin permits higher RthJA. |
Compared with SiA440DJ-T1-GE3, SIA432DJ-T1-GE3 offers lower gate charge for 3.3 V drive but slightly higher RDS(on); compared with DMN3026LSD-13, it delivers superior thermal performance and 60 % smaller footprint despite identical voltage rating.
Availability
SIA432DJ-T1-GE3 is available at Aetrix Electronics and suitable for USB-C power delivery, portable battery protection, and industrial sensor node power gating requiring stable component supply, consistent Pb-free compliance, and long-term production continuity.
Supply support for SIA432DJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal robustness, and reliability.
The PowerPAK® SC-70 series was designed specifically for ultra-compact, high-current load switching in space-constrained applications such as mobile, wearables, and industrial edge nodes where thermal density and logic-level drive are critical.
FAQ
What is the maximum continuous drain current for SIA432DJ-T1-GE3 at 70 °C ambient temperature?
The maximum continuous drain current for SIA432DJ-T1-GE3 is 8.1 A at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® SC-70-6L package on standard FR4 board; actual current capability depends on PCB copper area and airflow. The SIA432DJ-T1-GE3 datasheet confirms this value under "Continuous Drain Current (TA = 70 °C)".
Does SIA432DJ-T1-GE3 support 3.3 V logic-level gate drive?
Yes, SIA432DJ-T1-GE3 supports 3.3 V logic-level gate drive: its gate-threshold voltage VGS(th) is specified from 1 V to 3 V, and RDS(on) = 0.0240 Ω is guaranteed at VGS = 4.5 V-well within reach of 3.3 V ±10 % systems. The SIA432DJ-T1-GE3 product summary confirms 9.2 A current capability at 4.5 V, validating robust enhancement at near-logic levels.
What is the thermal resistance from junction to ambient for SIA432DJ-T1-GE3?
The maximum junction-to-ambient thermal resistance (RthJA) for SIA432DJ-T1-GE3 is 36 °C/W under t ≤ 5 s transient conditions on a 1" × 1" FR4 board, per the Thermal Resistance Ratings table. For steady-state design, use the typical value of 28 °C/W. This RthJA directly informs minimum PCB copper area needed to maintain TJ ≤ 150 °C in the SIA432DJ-T1-GE3 application.
Is SIA432DJ-T1-GE3 suitable for reverse polarity protection?
No, SIA432DJ-T1-GE3 is not suitable for reverse polarity protection in its standard configuration because it is an N-channel MOSFET intended for high-side switching with gate drive referenced to source. Reverse polarity protection typically requires P-channel devices or back-to-back N-channel configurations. The SIA432DJ-T1-GE3 datasheet lists "Load Switch" as its primary application-not reverse protection-and does not specify body diode forward voltage for reverse conduction use cases.
What is the total gate charge of SIA432DJ-T1-GE3 at 4.5 V gate drive?
The total gate charge (Qg) of SIA432DJ-T1-GE3 is 5.6 nC (typical) at VGS = 4.5 V, as confirmed in the "Dynamic" section of the Specifications table. This low Qg enables fast switching with minimal driver power consumption-critical for battery-powered systems. The SIA432DJ-T1-GE3 specification sheet explicitly states Qg = 5.6 nC under VDS = 15 V, VGS = 4.5 V, and ID = 10 A test conditions.
SIA432DJ-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SC-70-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 800 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.5W (Ta), 19.2W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SC-70-6
SIA432DJ-T1-GE3 FAQ
1.How can I place an order for SIA432DJ-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIA432DJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIA432DJ-T1-GE3 reliable?
The price and inventory of SIA432DJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA432DJ-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIA432DJ-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA432DJ-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIA432DJ-T1-GE3?
SIA432DJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIA432DJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIA432DJ-T1-GE3?
For technical support, including SIA432DJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA432DJ-T1-GE3 requirements.
6.How does Aetrix verify that SIA432DJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIA432DJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA432DJ-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIA432DJ-T1-GE3?
All SIA432DJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA432DJ-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIA432DJ-T1-GE3 part is unused and in its original packaging.
Return procedure for SIA432DJ-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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