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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA436DJ-T4-GE3

Name: SIA436DJ-T4-GE3
Brand: Vishay Siliconix
SKU: SIA436DJ-T4-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIA436DJ-T4-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SIA436DJ-T4-GE3.pdf

Description:: MOSFET N-CH 8V 12A PPAK SC70-6

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Product details

Overview

SIA436DJ-T4-GE3 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET in a thermally enhanced PowerPAK® SC-70-6L package, rated for 8 V drain-source voltage, 12 A continuous drain current at T_C = 25 °C, and 9.4 mΩ R_DS(on) at V_GS = 4.5 V. It serves as a low-voltage load switch in portable electronics requiring minimal gate drive and low conduction loss.

For engineers reviewing the SIA436DJ-T4-GE3 datasheet, SIA436DJ-T4-GE3 pinout, SIA436DJ-T4-GE3 application, or SIA436DJ-T4-GE3 equivalent, this device is selected for compact, high-efficiency power switching in space-constrained battery-powered systems where 1.2–4.5 V gate drive compatibility and sub-1 V body diode forward voltage are critical design requirements.

Technical Context

The SIA436DJ-T4-GE3 employs trench-gate MOSFET technology to achieve low on-resistance with ultra-low gate charge (15 nC typ. at V_GS = 4.5 V), enabling fast switching and reduced drive losses. Its 6-pin PowerPAK SC-70 package integrates four drain terminals and one source terminal on the bottom thermal pad, optimizing current handling and thermal dissipation.

It features a gate-source threshold voltage of 0.35–0.8 V, supporting direct interface with 1.2 V, 1.5 V, and 1.8 V logic outputs. The device includes 100 % R_g testing and exhibits a body diode reverse recovery time of 10–20 ns, suitable for synchronous rectification and bidirectional current paths in DC-DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	8 V - Maximum blocking voltage for low-voltage rail switching (e.g., 3.3 V, 5 V, or USB PD output stages)
R_DS(on) max @ V_GS = 4.5 V	9.4 mΩ - Enables ≤150 mW conduction loss at 12 A, critical for thermal management in thin mobile PCBs
I_D continuous @ T_C = 25 °C	12 A - Supports high-current load switching without external heatsinking in compact layouts
Q_g typ.	15 nC - Reduces gate driver power demand and enables >1 MHz switching in buck regulators
V_GS(th)	0.35–0.8 V - Ensures reliable turn-on with 1.2 V core logic, eliminating level-shifter requirement
V_SD @ I_S = 10 A	0.73–1.2 V - Low body diode drop improves efficiency in reverse-current or freewheeling operation
R_thJC max.	6.5 °C/W - Enables direct thermal coupling to PCB copper for effective junction-to-board heat transfer

Pinout & Package

Package: PowerPAK® SC-70-6L - 2.05 mm × 2.05 mm leadless surface-mount package with exposed drain thermal pad on bottom side; compatible with standard reflow profiles (peak 260 °C).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 5 (Top-side)	Drain (D)	Four top-side drain connections provide parallel current paths and reduce package inductance
3 (Top-side)	Gate (G)	Single gate input with 0.5–5 Ω gate resistance; optimized for low-noise, stable switching
6 (Top-side)	Source (S)	Top-side source connection enables Kelvin sensing and simplifies gate driver layout
Bottom thermal pad	Drain (D)	Exposed copper drain pad enhances thermal performance and provides primary heat path to PCB

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × Q_g figure-of-merit (≈141 mΩ·nC) for high-frequency efficiency
PowerPAK SC-70-6L package	Reduces board area by >50 % vs. SO-8 while maintaining 12 A current capability and 3.5 W P_D at T_A = 25 °C
100 % R_g tested	Ensures consistent gate drive timing and eliminates batch-dependent switching variability in production
Low V_GS(th) range	Guarantees turn-on with 1.2 V logic rails-enables direct control from PMIC GPIOs without level shifters
Body diode t_rr = 10–20 ns	Supports synchronous rectification in buck converters up to 2 MHz without shoot-through risk

Applications

Smartphone Main Power Switch	Tablet PC USB-C Load Switch
Use Scenario: High-side power switch controlling main system rail (e.g., VBUS or VDD_MAIN) during boot-up and sleep state transitions. IC Role / Device Role / Timing Role: N-channel load switch configured with integrated gate driver or discrete pull-up resistor for controlled inrush limiting. Use Value: 9.4 mΩ R_DS(on) minimizes voltage drop under 10 A peak load, preserving system margin; 1.2 V gate compatibility enables direct PMIC control.	Use Scenario: Bidirectional load switch managing power delivery negotiation between USB-C port controller and system battery/charger IC. IC Role / Device Role / Timing Role: Low-side or high-side switch enabling/disabling VCONN or VBUS path based on PD contract status. Use Value: Sub-1 V body diode forward voltage ensures low-loss reverse conduction during cable plug/unplug events; 15 nC Q_g supports fast enable/disable response (<10 μs).
Mobile SoC Core Voltage Switch	Wearable BLE Module Power Gate
Use Scenario: Dynamic power gating of processor cores or GPU clusters to reduce standby leakage in multi-core SoCs. IC Role / Device Role / Timing Role: High-speed, low-R_DS(on) switch placed between PMIC output and SoC power domain input. Use Value: 0.35–0.8 V V_GS(th) allows seamless integration with 1.2 V domain control signals; 12 A rating covers burst-mode CPU loads.	Use Scenario: On/off control of sensor hub or RF subsystem in hearables and fitness trackers powered by coin-cell or small Li-ion batteries. IC Role / Device Role / Timing Role: Ultra-low-quiescent-load power gate isolating non-critical peripherals during deep-sleep mode. Use Value: 1 μA I_DSS at 8 V ensures <10 nW off-state leakage-extending battery life beyond 30 days in always-on monitoring applications.

Smartphone Main Power Switch

Tablet PC USB-C Load Switch

Use Scenario: High-side power switch controlling main system rail (e.g., VBUS or VDD_MAIN) during boot-up and sleep state transitions.

IC Role / Device Role / Timing Role: N-channel load switch configured with integrated gate driver or discrete pull-up resistor for controlled inrush limiting.

Use Value: 9.4 mΩ R_DS(on) minimizes voltage drop under 10 A peak load, preserving system margin; 1.2 V gate compatibility enables direct PMIC control.

Use Scenario: Bidirectional load switch managing power delivery negotiation between USB-C port controller and system battery/charger IC.

IC Role / Device Role / Timing Role: Low-side or high-side switch enabling/disabling VCONN or VBUS path based on PD contract status.

Use Value: Sub-1 V body diode forward voltage ensures low-loss reverse conduction during cable plug/unplug events; 15 nC Q_g supports fast enable/disable response (<10 μs).

Mobile SoC Core Voltage Switch

Wearable BLE Module Power Gate

Use Scenario: Dynamic power gating of processor cores or GPU clusters to reduce standby leakage in multi-core SoCs.

IC Role / Device Role / Timing Role: High-speed, low-R_DS(on) switch placed between PMIC output and SoC power domain input.

Use Value: 0.35–0.8 V V_GS(th) allows seamless integration with 1.2 V domain control signals; 12 A rating covers burst-mode CPU loads.

Use Scenario: On/off control of sensor hub or RF subsystem in hearables and fitness trackers powered by coin-cell or small Li-ion batteries.

IC Role / Device Role / Timing Role: Ultra-low-quiescent-load power gate isolating non-critical peripherals during deep-sleep mode.

Use Value: 1 μA I_DSS at 8 V ensures <10 nW off-state leakage-extending battery life beyond 30 days in always-on monitoring applications.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA441DJ-T4-GE3	Higher V_DS (12 V), higher R_DS(on) (12.5 mΩ @ 4.5 V), same package and pinout	Better suited for 5 V–9 V rails; less optimal for 3.3 V systems due to higher conduction loss	Select when wider input voltage range is required and 3 mΩ higher R_DS(on) is acceptable
DMN10H015LPS-13	Same V_DS (8 V), lower R_DS(on) (7.5 mΩ @ 4.5 V), but larger PowerDI™ 3333 package (3.3 mm × 3.3 mm)	Offers better thermal performance (R_thJA = 25 °C/W) but consumes >2.5× more PCB area	Select when thermal headroom is constrained and board space permits larger footprint

Compared with SiA441DJ-T4-GE3 and DMN10H015LPS-13, the SIA436DJ-T4-GE3 delivers the best combination of ultra-low R_DS(on), minimal gate charge, and smallest footprint-making it optimal for space- and efficiency-critical 1.2–4.5 V load switching in smartphones and wearables.

Availability

SIA436DJ-T4-GE3 is available at Aetrix Electronics and suitable for smartphone power sequencing, tablet USB-C load management, and wearable BLE module gating requiring stable component supply across high-mix, low-volume production runs.

Supply support for SIA436DJ-T4-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and miniaturization.

The SIA436DJ-T4-GE3 belongs to Vishay's PowerPAK® SC-70 TrenchFET® family, engineered specifically for portable electronics load switching where ultra-low gate drive voltage, minimal board area, and high current density are mandatory.

FAQ

What is the maximum continuous drain current rating for SIA436DJ-T4-GE3 at ambient temperature?

The SIA436DJ-T4-GE3 is rated for 2.9 A continuous drain current at T_A = 25 °C with standard FR4 mounting (1" × 1"), as specified in the Absolute Maximum Ratings table. This value reflects thermal limits imposed by junction-to-ambient resistance (R_thJA = 36 °C/W max) and must be derated above 25 °C ambient per the published power derating curve.

Does SIA436DJ-T4-GE3 support 1.2 V logic-level gate drive?

Yes, the SIA436DJ-T4-GE3 has a guaranteed gate-source threshold voltage (V_GS(th)) of 0.35–0.8 V, and its R_DS(on) is characterized down to V_GS = 1.2 V (18 mΩ max). This enables full enhancement and reliable switching directly from 1.2 V core logic or PMIC GPIO outputs without external level shifting.

What is the thermal resistance from junction to case (R_thJC) for SIA436DJ-T4-GE3?

The SIA436DJ-T4-GE3 has a typical junction-to-case (drain) thermal resistance of 5.3 °C/W and a maximum of 6.5 °C/W under steady-state conditions. This low value is enabled by the exposed drain thermal pad in the PowerPAK SC-70-6L package, which must be soldered to a large PCB copper pour for optimal heat transfer.

Is SIA436DJ-T4-GE3 suitable for reverse-current protection applications?

Yes, the SIA436DJ-T4-GE3 includes an integrated body diode with V_SD = 0.73–1.2 V at 10 A and reverse recovery time t_rr = 10–20 ns. When used in low-side configuration with gate driven to ground, it provides fast, low-loss reverse-current blocking-commonly applied in USB OTG and battery backup paths.

What is the total gate charge (Q_g) specification for SIA436DJ-T4-GE3 at 4.5 V gate drive?

The SIA436DJ-T4-GE3 has a typical total gate charge (Q_g) of 15 nC and a maximum of 23 nC when measured at V_DS = 4 V, V_GS = 4.5 V, and I_D = 15.7 A. This low Q_g enables efficient high-frequency switching in portable DC-DC converters and reduces gate driver power consumption.

SIA436DJ-T4-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 8 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.2V, 4.5V

Rds On (Max) @ Id, Vgs:: 9.4mOhm @ 15.7A, 4.5V

Vgs(th) (Max) @ Id:: 800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25.2 nC @ 5 V

Vgs (Max):: ±5V

Input Capacitance (Ciss) (Max) @ Vds:: 1508 pF @ 4 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 19W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6

SIA436DJ-T4-GE3 FAQ

1.How can I place an order for SIA436DJ-T4-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA436DJ-T4-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA436DJ-T4-GE3 reliable?

The price and inventory of SIA436DJ-T4-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA436DJ-T4-GE3 is usually 5 days.

3.What payment methods are accepted for SIA436DJ-T4-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA436DJ-T4-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA436DJ-T4-GE3?

SIA436DJ-T4-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA436DJ-T4-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA436DJ-T4-GE3?

For technical support, including SIA436DJ-T4-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA436DJ-T4-GE3 requirements.

6.How does Aetrix verify that SIA436DJ-T4-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA436DJ-T4-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA436DJ-T4-GE3 meets industry standards.

7.What is the process for return or replacement of SIA436DJ-T4-GE3?

All SIA436DJ-T4-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA436DJ-T4-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA436DJ-T4-GE3 part is unused and in its original packaging.

Return procedure for SIA436DJ-T4-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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