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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA4371EDJ-T1-GE3

Name: SIA4371EDJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA4371EDJ-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIA4371EDJ-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SIA4371EDJ-T1-GE3.pdf

Description:: P-CHANNEL 30-V (D-S) MOSFET POWE

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Product details

Overview

SIA4371EDJ-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET optimized for low-voltage load switching in portable electronics, featuring -30 V V_DS, 0.045 Ω R_DS(on) at V_GS = -10 V, and -9 A continuous drain current at T_C = 25 °C. It operates as a high-side or low-side power switch in battery management circuits with thermally enhanced PowerPAK® SC-70-6L packaging.

For engineers reviewing the SIA4371EDJ-T1-GE3 datasheet, SIA4371EDJ-T1-GE3 pinout, SIA4371EDJ-T1-GE3 application, or SIA4371EDJ-T1-GE3 equivalent, key selection criteria include gate threshold voltage (-0.6 to -1.5 V), body diode forward voltage (-0.8 to -1.2 V), thermal resistance (R_thJC = 6 °C/W max), Q_g = 10.6 nC at V_GS = -4.5 V, and HBM ESD rating of 3000 V.

Technical Context

This device uses trench-based silicon technology to achieve low on-resistance and fast switching in a 2.05 mm × 2.05 mm surface-mount package. Its gate threshold voltage range (-0.6 to -1.5 V) enables direct logic-level drive from 3.3 V or 5 V controllers without level-shifting circuitry.

The integrated body diode supports reverse-current paths in battery protection and charger IC interfaces, with t_rr = 13 ns and Q_rr = 6 nC at I_F = -2.9 A. Thermal design leverages low junction-to-case resistance (6 °C/W typical) for sustained operation up to T_J = 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage for battery-side switching in 3.7 V Li-ion systems with headroom margin.
R_DS(on) @ V_GS = -10 V	0.045 Ω max - Enables <150 mW conduction loss at 6 A load current, critical for thermal budget in compact PCBs.
R_DS(on) @ V_GS = -4.5 V	0.053 Ω max - Ensures reliable turn-on with standard 3.3 V GPIO or PMIC outputs without gate boosting.
Q_g	10.6 nC typ. at V_GS = -4.5 V - Supports efficient 1–2 MHz switching in synchronous buck or OR-ing applications.
I_D (continuous)	-9 A at T_C = 25 °C - Delivers full-rated current when mounted on thermally adequate copper area (1"×1" FR4).
V_GS(th)	-0.6 to -1.5 V - Guarantees turn-on with 2.5 V–3.3 V control signals; avoids unintended conduction near 0 V.
R_thJC	6 °C/W typical - Allows direct heat transfer to PCB ground plane or metal heatsink, reducing thermal derating.

Pinout & Package

PowerPAK® SC-70-6L is a thermally enhanced 6-pin surface-mount package with exposed drain pad on bottom side. Pin 1–6 are arranged in single-row configuration with dual drain terminals (Pins 1, 3, 4) and shared source (Pins 2, 5, 7 - note Pin 7 is internal source connection not externally accessible). The package footprint measures 2.05 mm × 2.05 mm with 0.5 mm pitch.

Pin/Terminal	Circuit Role	Design Meaning
1, 3, 4 (D)	Drain	Three parallel drain terminals reduce current density and package inductance; connected internally to exposed copper pad for thermal and electrical path to PCB.
2, 5 (S)	Source	Two external source pins provide low-inductance return path; tied together on PCB to minimize loop area in high-di/dt switching.
6 (G)	Gate	Single gate input with 2.2–22 Ω gate resistance; optimized for 1 Ω driver impedance to achieve 28 ns t_d(on) at V_GEN = -4.5 V.

Key Features

Feature	Design Value
TrenchFET® process	Enables 0.045 Ω R_DS(on) in SC-70 footprint - delivers performance comparable to larger SO-8 devices in 25% area.
100% R_g tested	Guarantees gate resistance between 2.2–22 Ω - ensures consistent switching timing and driver stage stability across production lots.
Thermally enhanced PowerPAK® SC-70	6 °C/W R_thJC - reduces junction temperature rise by >40% vs. standard SC-70 packages under identical 6 A load conditions.
HBM ESD rating	3000 V - eliminates need for external ESD protection in handheld USB/charger port interface designs.
Body diode t_rr	13 ns typical - minimizes reverse-recovery losses during synchronous rectification or bidirectional current flow.

Applications

Battery Protection Circuit	USB-C Power Delivery Switch
Use Scenario: Reverse-current blocking and over-discharge cutoff in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-channel switch controlled by battery fuel gauge or protection IC. Use Value: Low 0.053 Ω R_DS(on) at -4.5 V gate drive preserves battery runtime; -30 V rating covers full charge/discharge swing plus surge margin.	Use Scenario: VBUS path switching in USB-C receptacles supporting 5 V/3 A and programmable power supply negotiation. IC Role / Device Role / Timing Role: Load switch enabling/disabling power delivery to downstream ports based on CC logic state. Use Value: Fast 28 ns turn-on delay and 65 ns rise time support dynamic PD contract changes; 3000 V HBM withstands hot-plug transients.
Smartphone Charger IC Interface	Wireless Charging Receiver Power Path
Use Scenario: Isolating charging IC output from battery during system boot or fault conditions. IC Role / Device Role / Timing Role: Low-side or high-side switch placed between charger IC and battery terminal. Use Value: -1.5 V maximum V_GS(th) ensures robust turn-off when charger IC pulls gate to 0 V; body diode conducts reverse current during adapter removal.	Use Scenario: Enabling/disabling power transfer from wireless receiver coil to battery or system rail. IC Role / Device Role / Timing Role: Main power FET in Qi-compliant receiver power management block. Use Value: 10.6 nC Q_g allows efficient 500 kHz–1 MHz switching; 0.045 Ω R_DS(on) limits conduction loss in space-constrained coil-area layouts.

Battery Protection Circuit

USB-C Power Delivery Switch

Use Scenario: Reverse-current blocking and over-discharge cutoff in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: High-side P-channel switch controlled by battery fuel gauge or protection IC.

Use Value: Low 0.053 Ω R_DS(on) at -4.5 V gate drive preserves battery runtime; -30 V rating covers full charge/discharge swing plus surge margin.

Use Scenario: VBUS path switching in USB-C receptacles supporting 5 V/3 A and programmable power supply negotiation.

IC Role / Device Role / Timing Role: Load switch enabling/disabling power delivery to downstream ports based on CC logic state.

Use Value: Fast 28 ns turn-on delay and 65 ns rise time support dynamic PD contract changes; 3000 V HBM withstands hot-plug transients.

Smartphone Charger IC Interface

Wireless Charging Receiver Power Path

Use Scenario: Isolating charging IC output from battery during system boot or fault conditions.

IC Role / Device Role / Timing Role: Low-side or high-side switch placed between charger IC and battery terminal.

Use Value: -1.5 V maximum V_GS(th) ensures robust turn-off when charger IC pulls gate to 0 V; body diode conducts reverse current during adapter removal.

Use Scenario: Enabling/disabling power transfer from wireless receiver coil to battery or system rail.

IC Role / Device Role / Timing Role: Main power FET in Qi-compliant receiver power management block.

Use Value: 10.6 nC Q_g allows efficient 500 kHz–1 MHz switching; 0.045 Ω R_DS(on) limits conduction loss in space-constrained coil-area layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA403DJ-T1-GE3	V_DS = -20 V, R_DS(on) = 0.032 Ω @ -4.5 V, smaller 1.6 mm × 1.6 mm footprint	Limited to 2-cell or lower-voltage battery systems; insufficient for 30 V surge immunity in USB-C VBUS	Select when board space is constrained and operating voltage stays ≤20 V; verify gate drive compatibility with lower V_GS(th).
DMN3026LFG-7	V_DS = -30 V, R_DS(on) = 0.048 Ω @ -10 V, SOT-23-6 package, higher R_thJA = 120 °C/W	Higher thermal resistance requires larger copper pour or forced air cooling for same current rating	Choose for legacy SOT-23 layout compatibility; expect ~2× higher junction temperature rise at 6 A vs. SIA4371EDJ-T1-GE3.

Compared with SiA403DJ-T1-GE3 and DMN3026LFG-7, the SIA4371EDJ-T1-GE3 provides superior thermal performance (6 °C/W R_thJC) and wider voltage margin (-30 V), making it optimal for space-limited, high-reliability battery-switching applications where both surge immunity and thermal headroom are critical.

Availability

SIA4371EDJ-T1-GE3 is available at Aetrix Electronics and suitable for portable power management, USB-C load switching, and battery protection circuits requiring stable component supply and long-term manufacturability.

Supply support for SIA4371EDJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-efficiency power solutions and rugged signal integrity.

The PowerPAK® SC-70 product line targets ultra-compact, thermally demanding portable and consumer applications where traditional packages fail to meet size or thermal constraints.

FAQ

What is the maximum continuous drain current for SIA4371EDJ-T1-GE3 at 70 °C case temperature?

The SIA4371EDJ-T1-GE3 supports -9 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with 1" × 1" FR4 copper area and accounts for package-limited power dissipation under steady-state conditions.

Does SIA4371EDJ-T1-GE3 require a gate resistor for stable switching?

Yes - the SIA4371EDJ-T1-GE3 has a measured gate resistance (R_g) of 2.2–22 Ω and benefits from an external series gate resistor (typically 1–10 Ω) to dampen ringing and control dV/dt during turn-on/off. Test data shows 1 Ω yields 28 ns t_d(on) and 65 ns t_r at V_GEN = -4.5 V, confirming optimal drive strength.

Can SIA4371EDJ-T1-GE3 be used in high-side switch configurations with 3.3 V logic control?

Yes - the SIA4371EDJ-T1-GE3 has a V_GS(th) range of -0.6 to -1.5 V and achieves 0.053 Ω R_DS(on) at V_GS = -4.5 V, making it fully compatible with 3.3 V GPIO or PMIC outputs driving the gate through a simple level translator or direct pull-down network.

What is the thermal resistance from junction to ambient for SIA4371EDJ-T1-GE3 on a standard FR4 board?

The SIA4371EDJ-T1-GE3 has a maximum R_thJA of 43 °C/W when mounted on a 1" × 1" FR4 board per test condition b. Its typical R_thJA is 32 °C/W, enabling 2.9 W power dissipation at T_A = 25 °C before reaching T_J = 150 °C - sufficient for most portable load-switch use cases.

Is the body diode in SIA4371EDJ-T1-GE3 suitable for reverse-current conduction in battery backup paths?

Yes - the SIA4371EDJ-T1-GE3 features a low V_SD of -0.8 to -1.2 V and fast t_rr of 13 ns, allowing efficient reverse conduction during battery switchover or charger removal. Its Q_rr of 6 nC minimizes recovery losses in bidirectional power paths common in USB-C and power bank designs.

SIA4371EDJ-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6.4A (Ta), 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 3.7A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 2.9W (Ta), 15.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6

SIA4371EDJ-T1-GE3 FAQ

1.How can I place an order for SIA4371EDJ-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA4371EDJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA4371EDJ-T1-GE3 reliable?

The price and inventory of SIA4371EDJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA4371EDJ-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIA4371EDJ-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA4371EDJ-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA4371EDJ-T1-GE3?

SIA4371EDJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA4371EDJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA4371EDJ-T1-GE3?

For technical support, including SIA4371EDJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA4371EDJ-T1-GE3 requirements.

6.How does Aetrix verify that SIA4371EDJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA4371EDJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA4371EDJ-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIA4371EDJ-T1-GE3?

All SIA4371EDJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA4371EDJ-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA4371EDJ-T1-GE3 part is unused and in its original packaging.

Return procedure for SIA4371EDJ-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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