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Vishay Siliconix SIA439EDJ-T1-GE3
- Part No.:
- SIA439EDJ-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SC-70-6
- Datasheet:
-
SIA439EDJ-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 28A PPAK SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:3,415
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Product details
Overview
SIA439EDJ-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in PowerPAK® SC-70-6L package, rated for -20 V VDS, 0.0165 Ω RDS(on) at -4.5 V VGS, and -28 A continuous drain current at TC = 25 °C. It serves as a high-efficiency load switch in portable power management circuits.
For engineers reviewing the SIA439EDJ-T1-GE3 datasheet, SIA439EDJ-T1-GE3 pinout, SIA439EDJ-T1-GE3 application, or SIA439EDJ-T1-GE3 equivalent, key selection criteria include low RDS(on) at logic-level gate drive, thermally enhanced leadless packaging, robust UIS and ESD performance (4000 V HBM), and suitability for battery-switching duty in space-constrained mobile designs.
Technical Context
This device uses trench-gate MOSFET technology to achieve low on-resistance with fast switching characteristics: typical Qg is 26.7 nC at -4.5 V VGS, and td(off) is 95 ns under standard test conditions. Its gate threshold voltage ranges from -0.4 V to -1.0 V, enabling reliable turn-on with 1.8 V–3.7 V logic-compatible drive.
The PowerPAK SC-70-6L package features exposed-drain thermal pads and a 2.05 mm × 2.05 mm footprint. Thermal resistance is 5.3 °C/W (junction-to-case) and 28 °C/W (junction-to-ambient, t ≤ 5 s), supporting high-power-density operation without external heatsinking in portable applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum drain-source blocking voltage for battery-switching up to 2-cell Li-ion systems. |
| RDS(on) @ VGS = -4.5 V | 0.0165 Ω (max) - Enables <17 mW conduction loss at 10 A, critical for efficiency in always-on load switches. |
| ID (continuous, TC = 25 °C) | -28 A - Supports high-current rail switching in tablet PC power trees without derating. |
| Qg @ VGS = -4.5 V | 26.7 nC (typ) - Low gate charge reduces driver power and enables fast turn-on/turn-off in PWM-controlled loads. |
| VGS(th) | -0.4 V to -1.0 V - Ensures full enhancement with 1.8 V GPIOs, eliminating need for level-shifting circuitry. |
| RthJC | 5.3 °C/W (typ) - Efficient heat transfer from junction to PCB copper, enabling compact thermal design in thin-profile devices. |
| EAS | 5.8 mJ - Withstands single-pulse inductive energy during hot-swap events without failure. |
Pinout & Package
Package: PowerPAK® SC-70-6L-Single - 2.05 mm × 2.05 mm, leadless, thermally enhanced surface-mount package with exposed drain paddle.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts logic-level negative voltage to turn on P-channel device; low Ciss (2410 pF) minimizes drive burden. |
| 2 (S) | Source | Reference node for gate drive; tied to system VBAT in high-side load switch configuration. |
| 3 (S) | Source | Second source connection; paralleled internally with Pin 2 to reduce source inductance and improve current sharing. |
| 4 (D) | Drain | Main current path output; connected to exposed copper paddle for thermal conduction to PCB ground plane. |
| 5 (D) | Drain | Second drain connection; electrically tied to Pin 4 and paddle; enhances current handling and thermal dissipation. |
| 6 (D) | Drain | Third drain connection; completes low-inductance, high-current path from die to PCB via multiple solder joints. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers ultra-low RDS(on) at low VGS, enabling efficient operation directly from 1.8 V–3.3 V control rails. |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency (<18 Ω max) and ruggedness against unclamped inductive switching stress in real-world load dumps. |
| 4000 V HBM ESD rating | Eliminates need for external ESD protection in handheld device front-end power switches, reducing BOM count and board area. |
| Thermally enhanced PowerPAK SC-70 | Provides 3× better thermal performance than standard SC-70 packages, allowing -28 A operation at TC = 25 °C in minimal PCB area. |
| Lead (Pb)-free and Halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709B requirements for environmentally compliant consumer electronics manufacturing. |
Applications
| Smartphone Battery Switch | Tablet PC Load Switch |
|---|---|
|
Use Scenario: Isolating main Li-ion battery from system during deep sleep or fault conditions to minimize standby current. IC Role / Device Role / Timing Role: High-side P-channel load switch controlled by baseband processor GPIO. Use Value: 0.0165 Ω RDS(on) limits voltage drop to <165 mV at 10 A, preserving battery runtime and enabling accurate fuel gauging. |
Use Scenario: Enabling/disabling USB-C PD input power path during adapter hot-plug or overvoltage events. IC Role / Device Role / Timing Role: Reverse-polarity protected, fast-turnoff load switch in power delivery front-end. Use Value: 95 ns td(off) and 25 ns tf ensure rapid shutdown (<120 ns total) to prevent bus fault propagation. |
| Mobile SoC Power Sequencing | Portable SSD Power Gate |
|
Use Scenario: Controlling power-up sequence of multi-rail SoC subsystems (e.g., GPU before CPU core) using timed GPIO signals. IC Role / Device Role / Timing Role: Precision-controlled, low-leakage power gate with tight VGS(th) distribution (-0.4 V to -1.0 V). Use Value: IDSS ≤ -1 μA at VDS = -20 V ensures <10 nA leakage per switch, critical for multi-week shelf-life in always-connected devices. |
Use Scenario: Isolating NVMe controller power domain from NAND flash during suspend/resume transitions to prevent data corruption. IC Role / Device Role / Timing Role: High-reliability, avalanche-rated power switch with 5.8 mJ EAS for transient energy absorption. Use Value: Single-pulse avalanche capability withstands inductive kickback from DC-DC converter output capacitors during abrupt power removal. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiA441EDJ-T1-GE3 | VDS = -20 V, RDS(on) = 0.0125 Ω @ -4.5 V (lower), but ID = -30 A and Qg = 32.5 nC (higher) | Better conduction efficiency at high current, but slower switching due to higher gate charge | Select when lowest RDS(on) dominates over switching speed; verify layout can handle increased gate drive current. |
| DMN2011UFDF-7 | VDS = -20 V, RDS(on) = 0.019 Ω @ -4.5 V (higher), Qg = 21.5 nC (lower), in 1.6 mm × 1.6 mm WDFN package | Smaller footprint and faster switching, but higher conduction loss and lower current rating (-16 A) | Select when board space is constrained and peak current ≤12 A; confirm thermal performance meets derated ambient requirements. |
Compared with SIA439EDJ-T1-GE3, SiA441EDJ-T1-GE3 offers lower on-resistance for higher-current battery switches, while DMN2011UFDF-7 trades conduction loss for smaller size and faster switching-making each suitable for distinct trade-offs in portable power architecture.
Availability
SIA439EDJ-T1-GE3 is available at Aetrix Electronics and suitable for smartphone battery switching, tablet PC load management, and mobile SoC power sequencing requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for SIA439EDJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The PowerPAK SC-70 family was designed specifically for space-constrained portable electronics, delivering high current density and thermal efficiency in sub-2 mm² footprints for battery management and load switching.
FAQ
What is the maximum continuous drain current for SIA439EDJ-T1-GE3 at 70 °C case temperature?
The maximum continuous drain current for SIA439EDJ-T1-GE3 is -22 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SC-70-6L package under sustained high-power operation, and must be applied when ambient or PCB thermal conditions elevate case temperature beyond 25 °C.
Does SIA439EDJ-T1-GE3 require a gate resistor for stable operation in load-switch applications?
SIA439EDJ-T1-GE3 does not require an external gate resistor for basic on/off switching, but a small series resistor (1–10 Ω) is recommended to dampen ringing and control dV/dt during turn-on/turn-off. The device's typical gate resistance is 1.8 Ω, and its Qg of 26.7 nC at -4.5 V makes it compatible with standard GPIO drivers without additional buffering.
Can SIA439EDJ-T1-GE3 be used in a high-side configuration with 3.3 V logic control?
Yes, SIA439EDJ-T1-GE3 is fully compatible with 3.3 V logic control in high-side configurations. Its VGS(th) range of -0.4 V to -1.0 V ensures strong enhancement at VGS = -3.3 V, achieving RDS(on) ≤ 0.0180 Ω. No level shifter is needed, simplifying design and reducing component count in portable power rails.
What is the thermal resistance from junction to ambient for SIA439EDJ-T1-GE3 under standard mounting conditions?
The typical junction-to-ambient thermal resistance (RthJA) for SIA439EDJ-T1-GE3 is 28 °C/W for t ≤ 5 s on a 1" × 1" FR4 board, per the Thermal Resistance Ratings table. For steady-state operation, the maximum RthJA is 36 °C/W. These values assume standard solder reflow and adequate PCB copper area under the exposed drain paddle.
Is SIA439EDJ-T1-GE3 suitable for automotive infotainment power gating?
SIA439EDJ-T1-GE3 is not qualified for automotive applications. Its operating junction temperature range is -50 °C to +150 °C, but it lacks AEC-Q101 qualification, automotive-grade reliability testing, and PPAP documentation. For automotive infotainment, use Vishay's AEC-Q101-qualified equivalents such as SQJQ440E.
SIA439EDJ-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SC-70-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 16.5mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 69 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2410 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.5W (Ta), 19W (Tc)
- Operating Temperature:
- -50°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SC-70-6
SIA439EDJ-T1-GE3 FAQ
1.How can I place an order for SIA439EDJ-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIA439EDJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIA439EDJ-T1-GE3 reliable?
The price and inventory of SIA439EDJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA439EDJ-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIA439EDJ-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA439EDJ-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIA439EDJ-T1-GE3?
SIA439EDJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIA439EDJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIA439EDJ-T1-GE3?
For technical support, including SIA439EDJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA439EDJ-T1-GE3 requirements.
6.How does Aetrix verify that SIA439EDJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIA439EDJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA439EDJ-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIA439EDJ-T1-GE3?
All SIA439EDJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA439EDJ-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIA439EDJ-T1-GE3 part is unused and in its original packaging.
Return procedure for SIA439EDJ-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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