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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA4446DJ-T1-GE3

Name: SIA4446DJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA4446DJ-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIA4446DJ-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6 Dual

Datasheet:: SIA4446DJ-T1-GE3.pdf

Description:: N-CHANNEL 40 V (D-S) MOSFET POWE

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Product details

Overview

SIA4446DJ-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in a thermally enhanced PowerPAK® SC-70-6L package, delivering R_DS(on) = 0.011 Ω at V_GS = 10 V, Q_g = 5.3 nC, and continuous drain current of 31 A at T_C = 25 °C - optimized for high-efficiency DC/DC converters and synchronous rectification.

For engineers reviewing the SIA4446DJ-T1-GE3 datasheet, SIA4446DJ-T1-GE3 pinout, SIA4446DJ-T1-GE3 application, or SIA4446DJ-T1-GE3 equivalent, key selection criteria include its low R_DS(on)-Q_oss figure-of-merit, 100% R_g and UIS tested reliability, and leadless PowerPAK SC-70 footprint compatibility with space-constrained board layouts.

Technical Context

This MOSFET employs trench-gate silicon technology with optimized cell layout to minimize conduction and switching losses simultaneously. Its gate charge profile (Q_g = 5.3 nC typ. at V_GS = 4.5 V) and low Crss/Ciss ratio (0.031–0.064) support fast, low-loss switching in high-frequency synchronous buck stages.

The device integrates a robust body diode with t_rr = 15–30 ns and Q_rr = 3.1–10 nC, enabling efficient reverse recovery in bidirectional power paths. Thermal design is supported by R_thJC = 5.3 °C/W (typ.) and R_thJA = 28 °C/W (typ., t ≤ 5 s), validated on 1" × 1" FR4.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - maximum blocking voltage for 12 V/24 V input DC/DC stages and battery protection circuits
R_DS(on) @ V_GS = 10 V	0.011 Ω max - enables <1.1 W conduction loss at 10 A, critical for thermal management in compact converters
R_DS(on) @ V_GS = 4.5 V	0.015 Ω max - ensures stable on-resistance under logic-level gate drive from microcontrollers or PWM controllers
Q_g typ.	5.3 nC - low total gate charge reduces driver power demand and supports >1 MHz switching without excessive losses
I_D continuous @ T_C = 25 °C	31 A - high current capability in thermally anchored layouts, e.g., PCB copper pour under exposed drain pad
Q_oss typ.	6 nC - low output charge minimizes turn-off energy loss and improves light-load efficiency in hard-switched topologies
R_thJC (typ.)	5.3 °C/W - enables direct thermal coupling to heatsink or chassis for high-power density motor drive H-bridge legs

Pinout & Package

PowerPAK® SC-70-6L is a leadless, surface-mount package with exposed drain copper on the bottom side for enhanced thermal and electrical performance. The 2.05 mm × 2.05 mm footprint supports ultra-dense power stage layouts.

Pin/Terminal	Circuit Role	Design Meaning
1, 3, 4	Drain (D)	Internally connected to exposed bottom-side copper pad - primary heat path and high-current return node
2	Gate (G)	Control terminal requiring <2.4 V threshold; low R_g (0.5–5.0 Ω) enables clean edge control with minimal ringing
5	Source (S)	Reference node for gate drive; tied to power ground plane - critical for minimizing common-source inductance
6	Drain (D)	Redundant drain connection reinforcing current capacity and thermal conduction to PCB

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on)-Q_oss FOM for reduced conduction + switching loss trade-off in 40 V class
100 % R_g tested	Ensures consistent gate drive timing and eliminates batch-to-batch variation in switching speed and EMI behavior
100 % UIS tested	Validates ruggedness against unclamped inductive switching events - essential for motor drive and solenoid control
Thermally enhanced PowerPAK SC-70	Bottom-side exposed drain achieves 5.3 °C/W junction-to-case resistance - outperforms standard SOT-23 by >40 %
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard (doc#99912)

Applications

DC/DC Converters	Synchronous Rectification
Use Scenario: High-efficiency 12 V to 3.3 V/5 V point-of-load converter in telecom base station power modules. IC Role / Device Role: Low-side synchronous rectifier switch replacing Schottky diode in buck converter output stage. Use Value: Reduces conduction loss by >65 % vs. 40 V Schottky, enabling >95 % efficiency at 10–20 A load with minimal heatsinking.	Use Scenario: Secondary-side switch in isolated 48 V to 12 V LLC resonant converter for server PSU. IC Role / Device Role: Synchronous rectifier controlling power flow during positive half-cycle of transformer secondary. Use Value: Q_rr = 3.1 nC and t_rr = 15 ns minimize reverse recovery loss and EMI, improving full-load efficiency by 1.2 %.
Motor Drive Control	Battery Management
Use Scenario: Half-bridge leg in 24 V brushed DC motor controller for industrial automation actuators. IC Role / Device Role: High-current, low-R_DS(on) N-channel switch in H-bridge configuration with integrated bootstrap gate drive. Use Value: 31 A continuous rating and 80 A pulsed current support peak torque bursts without thermal derating on standard FR4.	Use Scenario: Load switch and overcurrent protection element in 3-cell Li-ion pack (12.6 V nominal) portable medical device. IC Role / Device Role: Main discharge path switch with fast fault response enabled by low R_DS(on) and high dI/dt immunity. Use Value: R_DS(on) = 0.015 Ω at 4.5 V gate drive ensures <15 mV sense voltage drop - simplifies current monitoring accuracy.

DC/DC Converters

Synchronous Rectification

Use Scenario: High-efficiency 12 V to 3.3 V/5 V point-of-load converter in telecom base station power modules.

IC Role / Device Role: Low-side synchronous rectifier switch replacing Schottky diode in buck converter output stage.

Use Value: Reduces conduction loss by >65 % vs. 40 V Schottky, enabling >95 % efficiency at 10–20 A load with minimal heatsinking.

Use Scenario: Secondary-side switch in isolated 48 V to 12 V LLC resonant converter for server PSU.

IC Role / Device Role: Synchronous rectifier controlling power flow during positive half-cycle of transformer secondary.

Use Value: Q_rr = 3.1 nC and t_rr = 15 ns minimize reverse recovery loss and EMI, improving full-load efficiency by 1.2 %.

Motor Drive Control

Battery Management

Use Scenario: Half-bridge leg in 24 V brushed DC motor controller for industrial automation actuators.

IC Role / Device Role: High-current, low-R_DS(on) N-channel switch in H-bridge configuration with integrated bootstrap gate drive.

Use Value: 31 A continuous rating and 80 A pulsed current support peak torque bursts without thermal derating on standard FR4.

Use Scenario: Load switch and overcurrent protection element in 3-cell Li-ion pack (12.6 V nominal) portable medical device.

IC Role / Device Role: Main discharge path switch with fast fault response enabled by low R_DS(on) and high dI/dt immunity.

Use Value: R_DS(on) = 0.015 Ω at 4.5 V gate drive ensures <15 mV sense voltage drop - simplifies current monitoring accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA400DJ-T1-GE3	R_DS(on) = 0.014 Ω @ 4.5 V, Q_g = 6.2 nC, same PowerPAK SC-70-6L package	Slightly higher conduction loss; suitable where margin exists in thermal budget	Select when lower gate charge is not required and cost sensitivity favors second-source availability
DMN3026LSD-13	R_DS(on) = 0.012 Ω @ 4.5 V, Q_g = 7.5 nC, PowerDI™ 3333 package (3.3 mm × 3.3 mm)	Larger footprint and higher Q_g increase switching loss and board area vs. SIA4446DJ-T1-GE3	Prefer only if existing layout accommodates larger package or requires higher SOA pulse current rating

Compared with SiA400DJ-T1-GE3 and DMN3026LSD-13, the SIA4446DJ-T1-GE3 offers the lowest R_DS(on)-Q_oss FOM in its class and smallest footprint - making it optimal for high-density, high-frequency DC/DC and motor drive designs where thermal and space constraints dominate.

Availability

SIA4446DJ-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, synchronous rectification circuits, and battery protection systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SIA4446DJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIA4446DJ-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family - engineered specifically for high-frequency, high-efficiency power conversion in space-constrained applications such as portable electronics, telecom infrastructure, and industrial motor drives.

FAQ

What is the maximum continuous drain current rating for SIA4446DJ-T1-GE3 at 70 °C case temperature?

The SIA4446DJ-T1-GE3 supports 25 A continuous drain current at T_C = 70 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits under steady-state conditions with adequate PCB copper thermal spreading. The value is confirmed in the "Continuous drain current (T_J = 150 °C)" row of the datasheet's Absolute Maximum Ratings section, with footnote b specifying test condition.

Does SIA4446DJ-T1-GE3 have a specified body diode reverse recovery time (t_rr)?

Yes, the SIA4446DJ-T1-GE3 specifies t_rr = 15–30 ns under conditions of I_F = 10 A, dI/dt = 100 A/μs, and T_J = 25 °C. This parameter is explicitly listed in the "Drain-Source Body Diode Characteristics" section of the datasheet and confirms suitability for synchronous rectification where fast diode recovery minimizes switching loss and EMI.

Is SIA4446DJ-T1-GE3 compatible with standard reflow soldering profiles?

Yes, the SIA4446DJ-T1-GE3 is qualified for lead-free reflow with a peak temperature of 260 °C, as stated in the "Soldering recommendations" note. It follows JEDEC J-STD-020 guidelines, and Vishay provides a detailed solder profile in document #73257. Manual soldering with an iron is not recommended due to its leadless PowerPAK SC-70 construction.

What is the gate-source threshold voltage range for SIA4446DJ-T1-GE3?

The SIA4446DJ-T1-GE3 has a gate-source threshold voltage (V_GS(th)) range of 1.1 V to 2.4 V at I_D = 250 μA and V_DS = V_GS, per the "Specifications" table. This logic-level compatible range ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIOs while maintaining noise immunity across temperature.

How is thermal performance characterized for SIA4446DJ-T1-GE3 in typical mounting conditions?

The SIA4446DJ-T1-GE3 specifies R_thJA = 28 °C/W (typical) for t ≤ 5 s on a 1" × 1" FR4 board, and R_thJC = 5.3 °C/W (typical) for steady-state junction-to-case conduction. These values are measured per JEDEC standards and enable accurate thermal modeling for both transient and continuous operation in real-world PCB layouts.

SIA4446DJ-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-70-6 Dual

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta), 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 915 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 19.2W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6 Dual

SIA4446DJ-T1-GE3 FAQ

1.How can I place an order for SIA4446DJ-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA4446DJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA4446DJ-T1-GE3 reliable?

The price and inventory of SIA4446DJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA4446DJ-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIA4446DJ-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA4446DJ-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA4446DJ-T1-GE3?

SIA4446DJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA4446DJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA4446DJ-T1-GE3?

For technical support, including SIA4446DJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA4446DJ-T1-GE3 requirements.

6.How does Aetrix verify that SIA4446DJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA4446DJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA4446DJ-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIA4446DJ-T1-GE3?

All SIA4446DJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA4446DJ-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA4446DJ-T1-GE3 part is unused and in its original packaging.

Return procedure for SIA4446DJ-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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