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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA444DJT-T1-GE3

Name: SIA444DJT-T1-GE3
Brand: Vishay Siliconix
SKU: SIA444DJT-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIA444DJT-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SIA444DJT-T1-GE3.pdf

Description:: MOSFET N-CH 30V 12A PPAK SC70-6

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Product details

Overview

SIA444DJT-T1-GE3 from Vishay Siliconix is a N-channel 30 V (D-S) TrenchFET® power MOSFET in a thermally enhanced Thin PowerPAK® SC-70-6L package, delivering R_DS(on) = 0.017 Ω at V_GS = 10 V and 12 A continuous drain current at T_C = 25 °C, optimized for high-frequency DC/DC converter switching stages.

For engineers reviewing the SIA444DJT-T1-GE3 datasheet, SIA444DJT-T1-GE3 pinout, SIA444DJT-T1-GE3 application, or SIA444DJT-T1-GE3 equivalent, this device is selected for compact, high-efficiency synchronous buck converters where low gate charge (5 nC at 4.5 V), ultra-thin 0.6 mm profile, and junction-to-case thermal resistance of 5.3 °C/W are critical design constraints.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with Q_g = 5 nC (V_GS = 4.5 V) and t_f = 10–15 ns. Its gate threshold voltage (V_GS(th) = 1.0–2.2 V) supports 3.3 V and 5 V logic-level drive without level shifting.

The Thin PowerPAK® SC-70-6L package features exposed drain pads on terminals 1–4 and bottom-side thermal conduction, enabling R_thJC = 5.3 °C/W and R_thJA = 28–36 °C/W on FR4, with no solder fillet required at singulated copper tips per Vishay specification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V input rail applications with margin
R_DS(on)	0.017 Ω @ V_GS = 10 V - Enables <170 mW conduction loss at 10 A in high-current paths
I_D (continuous)	12 A @ T_C = 25 °C - Supports >10 A output in compact synchronous buck designs
Q_g	5 nC @ V_GS = 4.5 V - Reduces gate driver power and enables >1 MHz switching
t_f	10–15 ns - Minimizes switching transition losses in high-frequency converters
V_GS(th)	1.0–2.2 V - Ensures full enhancement with standard 3.3 V microcontroller GPIO
R_thJC	5.3 °C/W - Allows direct heatsinking via PCB copper under drain terminals

Pinout & Package

Thin PowerPAK® SC-70-6L single-die package: 2.05 mm × 2.05 mm footprint, 0.6 mm height, leadless construction with exposed copper drain terminals on bottom side. Pin 1–4 are parallel-connected drains; Pin 5 is source; Pin 6 is gate.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Internally paralleled high-current path; exposed copper on bottom for thermal conduction and low-inductance layout
5	Source (S)	Reference node for gate drive; connects to power ground plane with minimal loop inductance
6	Gate (G)	High-impedance control input; requires <5 nC charge for full turn-on at 4.5 V

Key Features

Feature	Design Value
TrenchFET® silicon process	Enables 0.017 Ω R_DS(on) in SC-70 footprint - 40% lower on-resistance than planar equivalents at same size
Thin PowerPAK® SC-70-6L	0.6 mm height and 2.05 mm × 2.05 mm area - fits beneath low-profile inductors in space-constrained POL modules
Low Q_gd/Q_g ratio	Q_gd = 1.7 nC / Q_g = 5 nC → 0.34 - improves hard-switching robustness and reduces Miller-induced shoot-through risk
Body diode t_rr	15–30 ns - Enables efficient synchronous rectification without external Schottky catch diodes in buck topologies
Lead (Pb)-free & halogen-free	Complies with RoHS 2011/65/EU and JEDEC JS709B - qualified for automotive and industrial reflow profiles up to 260 °C peak

Applications

Point-of-Load Converter	USB-C PD Power Delivery
Use Scenario: 12 V input to 3.3 V/10 A output in server VRM or FPGA core supply. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in buck converter stage. Use Value: 0.017 Ω R_DS(on) limits conduction loss to <1.7 W at 10 A, while 5 nC Q_g supports 1.2 MHz operation with minimal gate drive loss.	Use Scenario: 20 V input to 5–20 V programmable output in USB-C PD sink adapter. IC Role / Device Role / Timing Role: Low-side switch in active clamp or synchronous rectifier path. Use Value: 12 A I_D rating and 30 V V_DS support full USB-C PD 20 V compliance; 0.6 mm height enables slim adapter form factor.
Industrial IoT Sensor Node	Automotive Body Control Module
Use Scenario: 5 V battery-powered sensor hub with 3.3 V/2 A LDO bypass using buck converter. IC Role / Device Role / Timing Role: Main switching FET in high-efficiency step-down regulator. Use Value: R_thJA = 28 °C/W allows natural convection cooling on 1" × 1" FR4; -55 to +150 °C T_J range ensures reliability in unheated enclosures.	Use Scenario: 12 V to 5 V/3 A supply for LIN transceiver and microcontroller in door module. IC Role / Device Role / Timing Role: Primary power switch in compact, vibration-resistant DC/DC stage. Use Value: Qualified per AEC-Q101; 0.022 Ω R_DS(on) @ 4.5 V enables direct 5 V MCU logic drive; thin profile avoids mechanical interference with connectors.

Point-of-Load Converter

USB-C PD Power Delivery

Use Scenario: 12 V input to 3.3 V/10 A output in server VRM or FPGA core supply.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in buck converter stage.

Use Value: 0.017 Ω R_DS(on) limits conduction loss to <1.7 W at 10 A, while 5 nC Q_g supports 1.2 MHz operation with minimal gate drive loss.

Use Scenario: 20 V input to 5–20 V programmable output in USB-C PD sink adapter.

IC Role / Device Role / Timing Role: Low-side switch in active clamp or synchronous rectifier path.

Use Value: 12 A I_D rating and 30 V V_DS support full USB-C PD 20 V compliance; 0.6 mm height enables slim adapter form factor.

Industrial IoT Sensor Node

Automotive Body Control Module

Use Scenario: 5 V battery-powered sensor hub with 3.3 V/2 A LDO bypass using buck converter.

IC Role / Device Role / Timing Role: Main switching FET in high-efficiency step-down regulator.

Use Value: R_thJA = 28 °C/W allows natural convection cooling on 1" × 1" FR4; -55 to +150 °C T_J range ensures reliability in unheated enclosures.

Use Scenario: 12 V to 5 V/3 A supply for LIN transceiver and microcontroller in door module.

IC Role / Device Role / Timing Role: Primary power switch in compact, vibration-resistant DC/DC stage.

Use Value: Qualified per AEC-Q101; 0.022 Ω R_DS(on) @ 4.5 V enables direct 5 V MCU logic drive; thin profile avoids mechanical interference with connectors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA403DJ-T1-GE3	R_DS(on) = 0.025 Ω @ 4.5 V; 9.5 A I_D; same Thin PowerPAK SC-70-6L package	Higher conduction loss at 6–8 A loads; suitable where gate drive is limited to 4.5 V only	Select when lower gate charge (4.5 nC) and tighter V_GS(th) (0.7–1.5 V) are prioritized over R_DS(on)
DMN3026LSD-13	R_DS(on) = 0.022 Ω @ 4.5 V; 10 A I_D; PowerDI™ 3333 package (2.7 mm × 2.7 mm, 0.9 mm height)	Larger footprint and height; higher R_thJA (45 °C/W); not drop-in compatible	Choose when board layout allows larger package and higher thermal budget is acceptable for cost-sensitive designs

Compared with SiA403DJ-T1-GE3 and DMN3026LSD-13, the SIA444DJT-T1-GE3 delivers the lowest R_DS(on) in the SC-70 footprint, enabling highest efficiency in space-constrained 10+ A buck converters - but requires careful gate drive strength verification due to its 10 nC Q_g at 10 V.

Availability

SIA444DJT-T1-GE3 is available at Aetrix Electronics and suitable for point-of-load converters, USB-C PD adapters, and industrial IoT power supplies requiring stable component supply, RoHS-compliant sourcing, and consistent lead-time visibility.

Supply support for SIA444DJT-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing and AEC-Q101 qualification capability.

The SIA444DJT-T1-GE3 belongs to Vishay's Thin PowerPAK® SC-70 TrenchFET® family, engineered for high-density, high-frequency DC/DC conversion in portable, automotive, and industrial power systems where thermal performance and footprint are critical.

FAQ

What is the maximum continuous drain current for SIA444DJT-T1-GE3 at 70 °C case temperature?

The SIA444DJT-T1-GE3 supports 12 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area for thermal conduction and is validated under steady-state conditions with junction temperature maintained ≤150 °C. The SIA444DJT-T1-GE3 maintains this current capability without derating between 25 °C and 70 °C case temperature.

Does SIA444DJT-T1-GE3 support 3.3 V logic-level gate drive?

Yes, the SIA444DJT-T1-GE3 has a gate threshold voltage (V_GS(th)) of 1.0–2.2 V and delivers R_DS(on) = 0.022 Ω at V_GS = 4.5 V, making it fully compatible with 3.3 V logic-level drive. At 3.3 V gate voltage, typical R_DS(on) is ~0.032 Ω (extrapolated from transfer curves), sufficient for moderate-current applications. The SIA444DJT-T1-GE3 does not require gate boosting for standard microcontroller GPIO interfaces.

What is the thermal resistance from junction to ambient for SIA444DJT-T1-GE3 on a 1" × 1" FR4 board?

Per Vishay documentation, the SIA444DJT-T1-GE3 exhibits R_thJA = 28 °C/W (typical) and 36 °C/W (maximum) when mounted on a 1" × 1" FR4 board with standard 1 oz copper. This value is measured under t ≤ 5 s pulse conditions and reflects the thermal performance achievable without additional heatsinking. The SIA444DJT-T1-GE3 leverages its exposed drain pad for bottom-side conduction, contributing to this low R_thJA.

Is SIA444DJT-T1-GE3 qualified for automotive applications?

The SIA444DJT-T1-GE3 is not explicitly AEC-Q101 qualified per Vishay's published documentation, though it shares the same Thin PowerPAK® SC-70-6L platform as AEC-Q101-certified variants like SiA443DJ-T1-GE3. Its operating junction temperature range (-55 to +150 °C) and Pb-free/halogen-free construction meet baseline automotive environmental requirements, but system-level validation is required. The SIA444DJT-T1-GE3 is recommended for industrial and consumer applications unless paired with formal qualification evidence.

How does the body diode performance of SIA444DJT-T1-GE3 impact synchronous rectification?

The SIA444DJT-T1-GE3 features a body diode with t_rr = 15–30 ns and Q_rr = 6–12 nC, enabling efficient synchronous rectification in buck converters without external Schottky diodes. Its low V_SD = 0.8–1.2 V at 8.8 A reduces reverse recovery loss during dead-time transitions. In practice, the SIA444DJT-T1-GE3 allows synchronous FET timing to be optimized within 20–40 ns dead time, minimizing shoot-through risk while maintaining high efficiency.

SIA444DJT-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 17mOhm @ 7.4A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 560 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 19W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6

SIA444DJT-T1-GE3 FAQ

1.How can I place an order for SIA444DJT-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA444DJT-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA444DJT-T1-GE3 reliable?

The price and inventory of SIA444DJT-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA444DJT-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIA444DJT-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA444DJT-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA444DJT-T1-GE3?

SIA444DJT-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA444DJT-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA444DJT-T1-GE3?

For technical support, including SIA444DJT-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA444DJT-T1-GE3 requirements.

6.How does Aetrix verify that SIA444DJT-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA444DJT-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA444DJT-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIA444DJT-T1-GE3?

All SIA444DJT-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA444DJT-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA444DJT-T1-GE3 part is unused and in its original packaging.

Return procedure for SIA444DJT-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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