My Inquiry
My Account
Vishay Siliconix SIA444DJT-T4-GE3
- Part No.:
- SIA444DJT-T4-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SC-70-6
- Datasheet:
-
SIA444DJT-T4-GE3.pdf
- Description:
- MOSFET N-CH 30V 11A/12A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,676
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIA444DJT-T4-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® power MOSFET in a thermally enhanced Thin PowerPAK® SC-70-6L package, delivering 12 A continuous drain current at TC = 25 °C, RDS(on) = 0.017 Ω at VGS = 10 V, and Qg = 10 nC (typ.), optimized for high-frequency DC/DC converter switching stages.
For engineers reviewing the SIA444DJT-T4-GE3 datasheet, SIA444DJT-T4-GE3 pinout, SIA444DJT-T4-GE3 application, or SIA444DJT-T4-GE3 equivalent, this device is evaluated for compact synchronous buck converters, load-switching in space-constrained portable electronics, and low-voltage motor drive half-bridges requiring ultra-thin (<0.6 mm) surface-mount power handling.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low RDS(on) and fast switching with Ciss = 560 pF and tr/tf ≤ 20 ns at VGEN = 10 V. Its gate threshold voltage (VGS(th) = 1–2.2 V) supports direct logic-level drive from 3.3 V or 4.5 V controllers without level shifting.
The Thin PowerPAK® SC-70-6L package uses exposed-drain thermal pads on the bottom side for low RthJC = 5.3 °C/W (typ.) and integrates six terminals - three parallel drain pins, one source, one gate, and one Kelvin source - enabling low-inductance layout and improved thermal transfer to PCB copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in industrial DC/DC systems. |
| RDS(on) @ VGS = 10 V | 0.017 Ω (max) - Enables <1.5 W conduction loss at 12 A, critical for thermally constrained 1" × 1" FR4 layouts. |
| ID (continuous, TC = 25 °C) | 12 A - Sustained current capability when mounted on thermally optimized copper area per Vishay's test board conditions. |
| Qg (typ., VGS = 10 V) | 10 nC - Low gate charge reduces driver power demand and enables >1 MHz switching in point-of-load regulators. |
| Ciss | 560 pF (typ.) - Input capacitance value used to calculate required gate drive strength and estimate Miller-induced turn-on risk. |
| RthJA (t ≤ 5 s) | 28 °C/W (typ.) - Junction-to-ambient thermal resistance under short-pulse conditions, informing transient thermal design. |
| VGS(th) | 1–2.2 V - Threshold range ensuring reliable turn-on with standard 3.3 V microcontroller GPIOs or PWM controllers. |
Pinout & Package
Thin PowerPAK® SC-70-6L is a leadless, ultra-thin (0.6 mm height), 2.05 mm × 2.05 mm surface-mount package with exposed drain thermal pad on the bottom side. It features six terminals arranged in a single-row configuration with three parallel drain connections for reduced current density and inductance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4 | Drain (D) | Three parallel drain terminals - share high-current path to minimize resistive loss and parasitic inductance in switching node routing. |
| 3 | Gate (G) | Control input - requires low-impedance gate driver connection to manage 10 nC charge and suppress oscillation during fast transitions. |
| 5 | Source (S) | Main source return - connects to power ground plane; serves as reference for gate drive and current sensing. |
| 6 | Kelvin Source (SK) | Separate Kelvin source terminal - enables accurate gate-drive referencing and eliminates IR drop error in high-precision current sensing applications. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers 0.017 Ω RDS(on) at 10 V while maintaining rugged avalanche rating and stable SOA across temperature. |
| Thin PowerPAK® SC-70-6L package | 0.6 mm profile enables stacking in ultra-low-profile modules and improves thermal coupling to PCB copper via exposed drain pad. |
| Three parallel drain terminals | Reduces effective drain inductance and current crowding, improving EMI performance and reliability in high-dI/dt switching. |
| Kelvin source connection (Pin 6) | Enables precise gate-source voltage control and accurate high-side current monitoring without sensing resistor placement compromises. |
| Low Qgd/Qg ratio (0.17) | Minimizes Miller effect-induced shoot-through risk in synchronous rectification and improves controllability at high dV/dt. |
Applications
| High-Efficiency Synchronous Buck Converter | USB-C PD Load Switch |
|---|---|
|
Use Scenario: Primary high-side switch in 5–12 V input, 3.3/5 V output point-of-load regulator for FPGA or SoC power domains. IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlled by integrated PWM controller with adaptive dead-time management. Use Value: 0.017 Ω RDS(on) and 10 nC Qg reduce conduction + switching losses, enabling >95% efficiency at 1 MHz and 10 A load. |
Use Scenario: Inrush-limited, reverse-polarity protected power path switch for USB-C PD 20 V/5 A input rails in portable SSDs or docking stations. IC Role / Device Role / Timing Role: Single-ended load switch with fast turn-on/turn-off (tr/tf ≤ 20 ns) for hot-plug sequencing and fault isolation. Use Value: VGS(th) of 1–2.2 V allows direct drive from 3.3 V system supervisor ICs; 30 V VDS accommodates 20 V PD transients. |
| Low-Voltage BLDC Motor Half-Bridge | Industrial Sensor Node Power Gate |
|
Use Scenario: Low-side switch in 12 V brushless DC motor gate driver stage for fan or pump control in HVAC subsystems. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET synchronized with complementary high-side driver for 6-step commutation. Use Value: Coss = 125 pF and Qrr = 6 nC (typ.) minimize switching loss and body diode recovery stress during freewheeling intervals. |
Use Scenario: Always-on power gating for ultra-low-power sensor nodes (e.g., LoRaWAN edge sensors), cycling between active and deep-sleep states. IC Role / Device Role / Timing Role: Low-leakage (IDSS ≤ 1 μA) power switch isolating downstream circuitry to extend battery life beyond 10 years. Use Value: IDSS = 1 μA at 30 V and -55 to +150 °C operating range ensure minimal standby drain in wide-temperature industrial deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiA400DJT-T4-GE3 | RDS(on) = 0.022 Ω @ 10 V; lower ID = 9.5 A; same package and pinout. | Lower current rating limits use in >8 A continuous loads; suitable for cost-sensitive 5–6 A buck stages. | Select when thermal budget allows higher RDS(on) and peak current demand is ≤9.5 A. |
| DMN3025LSD-13 | SO-8 package (3.9 mm × 4.9 mm); RDS(on) = 0.025 Ω @ 10 V; no Kelvin source; higher RthJA = 62 °C/W. | Larger footprint and inferior thermal performance; lacks Kelvin source for precision gate control. | Choose only if board layout permits SO-8 and Kelvin source functionality is unnecessary. |
Compared with SiA400DJT-T4-GE3 and DMN3025LSD-13, the SIA444DJT-T4-GE3 provides superior current density (12 A in 2.05 mm²), lowest RDS(on), and Kelvin source support - making it optimal for high-efficiency, space-constrained, and precision-controlled power stages where thermal and layout constraints dominate.
Availability
SIA444DJT-T4-GE3 is available at Aetrix Electronics and suitable for high-frequency DC/DC converters, USB-C power delivery load switching, and low-voltage motor drive circuits requiring stable component supply, Pb-free/halogen-free compliance, and consistent lot-to-lot parametric performance.
Supply support for SIA444DJT-T4-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal robustness, and automotive-grade reliability.
The SIA444DJT-T4-GE3 belongs to Vishay's Thin PowerPAK® SC-70 TrenchFET® family, engineered specifically for ultra-compact, high-frequency power conversion in portable, industrial, and computing applications where board space and thermal headroom are severely constrained.
FAQ
What is the maximum continuous drain current rating for SIA444DJT-T4-GE3 at 70 °C case temperature?
The SIA444DJT-T4-GE3 supports 12 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal vias per Vishay's recommended mounting conditions on a 1" × 1" FR4 board. Derating applies above 70 °C case temperature.
Does SIA444DJT-T4-GE3 include a Kelvin source connection, and how is it used?
Yes, the SIA444DJT-T4-GE3 features a dedicated Kelvin source terminal (Pin 6). It provides a separate low-current return path for the gate driver, eliminating the voltage drop across the main source bond wire. This ensures accurate VGS control and enables high-precision current sensing without compromising switching performance.
What is the typical total gate charge (Qg) of SIA444DJT-T4-GE3 at 4.5 V gate drive, and why does it matter?
The SIA444DJT-T4-GE3 has a typical Qg of 5 nC at VGS = 4.5 V. This low value directly reduces gate driver power consumption and enables faster switching transitions - essential for achieving high efficiency in 500 kHz–2 MHz DC/DC converters where gate drive losses scale linearly with Qg and frequency.
Can SIA444DJT-T4-GE3 be used in synchronous rectifier applications, and what body diode parameters support this?
Yes, the SIA444DJT-T4-GE3 is suitable for synchronous rectification due to its low VSD = 0.8 V (typ.) and fast trr = 15 ns (typ.) body diode. These characteristics minimize reverse recovery loss and forward conduction loss during dead-time intervals, especially in 12 V input buck converters operating above 500 kHz.
Is SIA444DJT-T4-GE3 compliant with lead-free and halogen-free requirements, and where is this confirmed?
Yes, SIA444DJT-T4-GE3 is explicitly marked as "lead (Pb)-free and halogen-free" in the official Vishay ordering information and conforms to JEDEC J-STD-020 moisture sensitivity level 1. Compliance is documented in Vishay's material declaration (www.vishay.com/doc?99912) and supported by RoHS and REACH certifications for this specific part number.
SIA444DJT-T4-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SC-70-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Ta), 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 17mOhm @ 7.4A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 560 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.5W (Ta), 19W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SC-70-6
SIA444DJT-T4-GE3 FAQ
1.How can I place an order for SIA444DJT-T4-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIA444DJT-T4-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIA444DJT-T4-GE3 reliable?
The price and inventory of SIA444DJT-T4-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA444DJT-T4-GE3 is usually 5 days.
3.What payment methods are accepted for SIA444DJT-T4-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA444DJT-T4-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIA444DJT-T4-GE3?
SIA444DJT-T4-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIA444DJT-T4-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIA444DJT-T4-GE3?
For technical support, including SIA444DJT-T4-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA444DJT-T4-GE3 requirements.
6.How does Aetrix verify that SIA444DJT-T4-GE3 is sourced from the original manufacturer or authorized distributors?
All SIA444DJT-T4-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA444DJT-T4-GE3 meets industry standards.
7.What is the process for return or replacement of SIA444DJT-T4-GE3?
All SIA444DJT-T4-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA444DJT-T4-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIA444DJT-T4-GE3 part is unused and in its original packaging.
Return procedure for SIA444DJT-T4-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIA444DJT-T4-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
