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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA448DJ-T1-GE3

Name: SIA448DJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA448DJ-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIA448DJ-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SIA448DJ-T1-GE3.pdf

Description:: MOSFET N-CH 20V 12A PPAK SC70-6

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Product details

Overview

SIA448DJ-T1-GE3 from Vishay Siliconix is an N-channel 20 V (D-S) TrenchFET® Power MOSFET in a thermally enhanced PowerPAK® SC-70-6L package, delivering R_DS(on) = 0.0150 Ω at V_GS = 4.5 V, 12 A continuous drain current, and 13 nC total gate charge - optimized for high-efficiency load switching and DC/DC converter applications in space-constrained mobile electronics.

For engineers reviewing the SIA448DJ-T1-GE3 datasheet, SIA448DJ-T1-GE3 pinout, SIA448DJ-T1-GE3 application, or SIA448DJ-T1-GE3 equivalent, this device offers verified low on-resistance at 1.5–4.5 V gate drive, 6-pin leadless surface-mount packaging, and thermal performance validated per JEDEC JESD51-2 with R_thJA = 28 °C/W (t ≤ 5 s), supporting compact battery-powered system design.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(on) across gate voltages from 1.5 V to 4.5 V, enabling direct interface with low-voltage logic controllers and PMIC outputs. Its PowerPAK SC-70-6L package integrates three drain terminals (pins 1, 2, 3) and one source terminal (pin 6) for reduced conduction loss and improved thermal spreading.

The device features 100 % R_g tested gate resistance (0.6–6.6 Ω), body diode reverse recovery time t_rr = 8–16 ns at I_F = 10 A, and guaranteed V_GS(th) = 0.4–1.0 V, supporting robust turn-on control in fast-switching synchronous buck stages and load switch circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage compatible with 3.3 V, 5 V, and 12 V input rails in portable power systems.
R_DS(on) @ V_GS = 4.5 V	0.0150 Ω - Enables <180 mW conduction loss at 12 A, critical for thermally limited smartphone PCBs.
I_D Continuous	12 A @ T_C = 25 °C - Supports high-current load switching without external heatsinking when mounted on 1" × 1" FR4.
Q_g Total Gate Charge	13 nC @ V_GS = 4.5 V - Reduces driver power consumption and switching transition time in 1–3 MHz DC/DC converters.
R_thJA	28 °C/W (t ≤ 5 s) - Confirmed via JEDEC JESD51-2 test board; enables accurate transient thermal modeling for burst-mode operation.
V_GS(th)	0.4–1.0 V - Ensures reliable turn-on with standard GPIO or low-voltage PMIC outputs down to 1.2 V logic levels.
t_rr Body Diode	8–16 ns - Minimizes reverse recovery loss and EMI in synchronous rectifier configurations.

Pinout & Package

PowerPAK® SC-70-6L is a 2.05 mm × 2.05 mm, 6-terminal, leadless surface-mount package with exposed copper drain pads on the bottom side. Pin 1–3 are internally connected to drain; pin 4 is gate; pin 5 is source; pin 6 is source - enabling dual-source connection for lower loop inductance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Drain (D)	Internally paralleled drain terminals - reduce current density and improve thermal dissipation under high pulsed loads.
4	Gate (G)	Single gate input - accepts standard CMOS-level drive; R_g tested 0.6–6.6 Ω ensures predictable switching timing.
5, 6	Source (S)	Two independent source terminals - allow separate Kelvin sensing or split routing to minimize ground bounce in high-dI/dt paths.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.0150 Ω R_DS(on) at 4.5 V gate drive - reduces conduction loss by >35 % vs. planar MOSFETs in same package.
Thermally enhanced PowerPAK SC-70	6.5 °C/W R_thJC (max) - enables efficient heat transfer to PCB copper, supporting 19.2 W power dissipation at T_C = 25 °C.
100 % R_g tested	Guarantees gate resistance between 0.6 Ω and 6.6 Ω - eliminates timing variation in parallel-switched or high-frequency PWM designs.
Low V_GS(th) range	0.4–1.0 V threshold - ensures full enhancement with 1.2 V, 1.5 V, or 1.8 V logic outputs without level-shifting circuitry.
Lead (Pb)-free and Halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912 - suitable for consumer and medical-grade assemblies.

Applications

Smartphone Load Switch	Mobile DC/DC Converter High-Side Switch
Use Scenario: Power sequencing for camera modules, display backlight, or USB peripherals in smartphones with tight thermal budgets. IC Role / Device Role / Timing Role: Low-side or high-side load switch controlling 3.3 V or 5 V rail activation/deactivation. Use Value: 0.0150 Ω R_DS(on) limits dropout to <180 mV at 12 A, preserving voltage margin while minimizing self-heating on thin PCBs.	Use Scenario: High-frequency (1–3 MHz) buck converter in tablet SoC power delivery, requiring fast switching and low gate drive loss. IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch in integrated power stage with PMIC-controlled gate drive. Use Value: 13 nC Q_g at 4.5 V enables <20 ns rise/fall times with 1 Ω gate resistor, reducing switching loss below 150 mW at 2 MHz.
USB-C Power Delivery Switch	Portable SSD Power Management
Use Scenario: In-line overcurrent protection and hot-swap control for USB-C 20 V/5 A power paths in docking stations. IC Role / Device Role / Timing Role: Low-R_DS(on) pass transistor in eFuse or smart load switch IC front-end. Use Value: 30 A pulsed drain rating and 0.8–1.2 V body diode forward voltage support bidirectional fault current limiting without external Schottky.	Use Scenario: Power gating for NVMe SSD controller and NAND flash banks during sleep mode in ultrabooks. IC Role / Device Role / Timing Role: Controlled power rail enable/disable with <1 µA leakage (I_DSS = 1 µA at V_DS = 20 V). Use Value: 0.4 V minimum V_GS(th) ensures clean turn-off at 0.8 V standby bias, preventing phantom drain in always-on storage subsystems.

Smartphone Load Switch

Mobile DC/DC Converter High-Side Switch

Use Scenario: Power sequencing for camera modules, display backlight, or USB peripherals in smartphones with tight thermal budgets.

IC Role / Device Role / Timing Role: Low-side or high-side load switch controlling 3.3 V or 5 V rail activation/deactivation.

Use Value: 0.0150 Ω R_DS(on) limits dropout to <180 mV at 12 A, preserving voltage margin while minimizing self-heating on thin PCBs.

Use Scenario: High-frequency (1–3 MHz) buck converter in tablet SoC power delivery, requiring fast switching and low gate drive loss.

IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch in integrated power stage with PMIC-controlled gate drive.

Use Value: 13 nC Q_g at 4.5 V enables <20 ns rise/fall times with 1 Ω gate resistor, reducing switching loss below 150 mW at 2 MHz.

USB-C Power Delivery Switch

Portable SSD Power Management

Use Scenario: In-line overcurrent protection and hot-swap control for USB-C 20 V/5 A power paths in docking stations.

IC Role / Device Role / Timing Role: Low-R_DS(on) pass transistor in eFuse or smart load switch IC front-end.

Use Value: 30 A pulsed drain rating and 0.8–1.2 V body diode forward voltage support bidirectional fault current limiting without external Schottky.

Use Scenario: Power gating for NVMe SSD controller and NAND flash banks during sleep mode in ultrabooks.

IC Role / Device Role / Timing Role: Controlled power rail enable/disable with <1 µA leakage (I_DSS = 1 µA at V_DS = 20 V).

Use Value: 0.4 V minimum V_GS(th) ensures clean turn-off at 0.8 V standby bias, preventing phantom drain in always-on storage subsystems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA403DJ-T1-GE3	R_DS(on) = 0.022 Ω @ 4.5 V; 9.5 A I_D; same PowerPAK SC-70-6L package	Lower current rating and higher on-resistance - suited for sub-8 A loads where thermal margin is less constrained	Select when lower cost and adequate R_DS(on) at 4.5 V suffice, and peak current remains ≤9.5 A.
DMN2020LSD-13	R_DS(on) = 0.019 Ω @ 4.5 V; 10 A I_D; PowerDI™ 3330 package (3.3 mm × 3.3 mm)	Larger footprint and higher R_thJA (45 °C/W) - requires more PCB area but offers higher surge current capability	Choose when board layout allows larger package and higher single-pulse energy handling (I_DM = 40 A) is prioritized over size.

Compared with SiA403DJ-T1-GE3 and DMN2020LSD-13, the SIA448DJ-T1-GE3 provides the lowest R_DS(on) in the smallest footprint, making it optimal for ultra-compact, high-current mobile power rails where thermal resistance and gate charge must both be minimized simultaneously.

Availability

SIA448DJ-T1-GE3 is available at Aetrix Electronics and suitable for smartphone load switching, mobile DC/DC converter high-side switching, and USB-C power delivery applications requiring stable component supply, consistent Pb-free/halogen-free compliance, and traceable lot-level sourcing.

Supply support for SIA448DJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global semiconductor manufacturer specializing in discrete power MOSFETs, diodes, and optoelectronics, with vertical integration across silicon design, wafer fabrication, and advanced packaging.

The SIA448DJ-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® SC-70 family, engineered specifically for high-density mobile and portable electronics where low R_DS(on), minimal gate charge, and ultra-small footprint are mandatory for next-generation power management.

FAQ

What is the maximum continuous drain current rating for SIA448DJ-T1-GE3 at 70 °C case temperature?

The SIA448DJ-T1-GE3 supports 12 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and validated under JEDEC-standard conditions using a 1" × 1" FR4 board. Derating begins above 70 °C per the published current derating curve, reaching 9.9 A at T_C = 70 °C ambient-equivalent conditions.

Does SIA448DJ-T1-GE3 have a guaranteed gate threshold voltage range?

Yes, the SIA448DJ-T1-GE3 has a guaranteed V_GS(th) range of 0.4 V to 1.0 V at I_D = 250 µA and T_J = 25 °C, as confirmed in the Specifications table. This ensures reliable turn-on with 1.2 V, 1.5 V, or 1.8 V logic outputs without requiring external gate boosting circuitry.

What is the thermal resistance from junction to ambient for SIA448DJ-T1-GE3 under short-duration pulse conditions?

The SIA448DJ-T1-GE3 has a typical R_thJA of 28 °C/W for pulse durations ≤5 seconds, measured per JEDEC JESD51-2 on a 1" × 1" FR4 board. This value is used for transient thermal analysis in burst-mode or intermittent load applications, not for steady-state power dissipation calculations.

Can SIA448DJ-T1-GE3 be used in synchronous rectifier configurations?

Yes, the SIA448DJ-T1-GE3 is suitable for synchronous rectification due to its low R_DS(on) (0.0150 Ω @ 4.5 V), fast body diode reverse recovery (t_rr = 8–16 ns), and low Q_rr (1–3 nC). Its dual-source pins (5 and 6) also support Kelvin sensing for precise gate control timing in high-efficiency buck converters.

Is the PowerPAK SC-70-6L package of SIA448DJ-T1-GE3 leadless and RoHS-compliant?

Yes, the SIA448DJ-T1-GE3 uses a leadless PowerPAK SC-70-6L package with exposed copper drain terminals and is certified Lead (Pb)-free and Halogen-free per Vishay document #99912, meeting RoHS Directive 2011/65/EU requirements for consumer and industrial electronics assembly.

SIA448DJ-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 12.4A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 1380 pF @ 1 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 19.2W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6

SIA448DJ-T1-GE3 FAQ

1.How can I place an order for SIA448DJ-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA448DJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA448DJ-T1-GE3 reliable?

The price and inventory of SIA448DJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA448DJ-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIA448DJ-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA448DJ-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA448DJ-T1-GE3?

SIA448DJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA448DJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA448DJ-T1-GE3?

For technical support, including SIA448DJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA448DJ-T1-GE3 requirements.

6.How does Aetrix verify that SIA448DJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA448DJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA448DJ-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIA448DJ-T1-GE3?

All SIA448DJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA448DJ-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA448DJ-T1-GE3 part is unused and in its original packaging.

Return procedure for SIA448DJ-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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