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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA453EDJ-T1-GE3

Name: SIA453EDJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA453EDJ-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIA453EDJ-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SIA453EDJ-T1-GE3.pdf

Description:: MOSFET P-CH 30V 24A PPAK SC70-6

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Product details

Overview

SIA453EDJ-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in PowerPAK® SC-70-6L package, rated for -30 V V_DS, 0.0185 Ω R_DS(on) at V_GS = -10 V, and -24 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency load switch or reverse-voltage protection device in space-constrained portable power rails.

For engineers reviewing the SIA453EDJ-T1-GE3 datasheet, SIA453EDJ-T1-GE3 pinout, SIA453EDJ-T1-GE3 application, or SIA453EDJ-T1-GE3 equivalent, key selection criteria include low gate charge (21 nC at V_GS = -4.5 V), thermally enhanced leadless packaging, and verified 100% UIS and R_g testing for robustness in battery-powered systems.

Technical Context

This MOSFET uses TrenchFET® technology to achieve low on-resistance with fast switching performance: typical Q_g is 21 nC at -4.5 V and 44 nC at -10 V, with t_d(off) up to 180 ns under -10 V drive. Its body diode exhibits t_rr = 22–45 ns and Q_rr = 20–40 nC, supporting synchronous rectification and reverse-current blocking.

The device operates over -50 °C to +150 °C junction temperature, with V_GS(th) ranging from -0.6 V to -1.4 V and tight ΔV_GS(th)/T_J coefficient of 3.1 mV/°C. Thermal resistance R_thJC is 5.3 °C/W (typ), enabling high-power density in compact layouts without external heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum drain-source blocking voltage for reverse-polarity and overvoltage protection circuits
R_DS(on) @ V_GS = -10 V	0.0185 Ω (max) - Enables <185 mW conduction loss at 10 A, critical for high-efficiency load switching
I_D (continuous, T_C = 25 °C)	-24 A - Supports high-current rail switching in tablet PC and smartphone power management
Q_g @ V_GS = -4.5 V	21 nC (typ) - Low gate drive energy reduces controller loading and improves PWM efficiency
R_thJC	5.3 °C/W (typ) - Allows >12 W dissipation directly into PCB copper, eliminating need for thermal vias in many designs
V_GS(th)	-0.6 V to -1.4 V - Ensures reliable turn-on with standard logic-level gate drivers down to -3.3 V
E_AS	5 mJ - Confirmed single-pulse avalanche energy rating supports transient surge resilience in unprotected inputs

Pinout & Package

PowerPAK® SC-70-6L-Single: 2.05 mm × 2.05 mm × 0.95 mm surface-mount package with exposed drain paddle for thermal and electrical performance. Lead (Pb)-free and halogen-free per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Four parallel drain terminals connected to internal die and exposed paddle - primary current path and thermal conduction path to PCB
5	Gate (G)	Control input requiring ≤±12 V drive; low C_iss (1900 pF) enables fast edge rates with minimal driver effort
6	Source (S)	Reference node for gate drive and load return; tied to system ground or battery negative in high-side switch configurations

Key Features

Feature	Design Value
TrenchFET® process	Delivers industry-leading R_DS(on) × area ratio for ultra-compact load switches in portable devices
100 % R_g and UIS tested	Guarantees gate resistance consistency and ruggedness against unclamped inductive switching stress
Thermally enhanced PowerPAK® SC-70	Reduces R_thJA to 28 °C/W (typ) - 40 % lower than standard SC-70 - enabling higher sustained current in thin-profile PCBs
HBM ESD rating	4000 V - Eliminates need for external ESD protection in handheld USB/charging port input stages
Low V_GS(th) variation	ΔV_GS(th)/T_J = 3.1 mV/°C ensures stable turn-on behavior across automotive and industrial temperature ranges

Applications

Smartphone Load Switch	USB-C Input Protection
Use Scenario: Isolating main battery from USB-C port during hot-plug events to prevent backfeed and inrush surges. IC Role / Device Role / Timing Role: High-side P-channel MOSFET configured as active-low controlled load switch with fast turn-off (<130 ns t_d(off)). Use Value: Prevents system reset during cable insertion by limiting peak inrush current to <2 A using controlled gate slew rate and low R_DS(on).	Use Scenario: Reverse-voltage and overvoltage protection for USB-C receptacle power pins in tablets. IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET for bidirectional blocking; leverages symmetric V_DS rating and low threshold. Use Value: Blocks -30 V faults while maintaining <190 mΩ total path resistance, preserving voltage headroom for 5 V/3 A operation.
Tablet PC Battery Disconnect	Mobile SoC Power-Rail Sequencing
Use Scenario: Safe disconnection of Li-ion battery during firmware-initiated shutdown or thermal fault. IC Role / Device Role / Timing Role: High-current, low-loss disconnect switch placed between battery and PMIC input, driven by baseband processor GPIO. Use Value: Achieves <0.5 V drop at 20 A due to 0.0235 Ω R_DS(on) @ -4.5 V, minimizing standby power loss and heat generation.	Use Scenario: Controlled ramp-up of SoC core voltage rails (e.g., GPU, CPU) to meet sequencing requirements. IC Role / Device Role / Timing Role: Gate-controlled power switch enabling precise timing via RC-delayed gate drive; supported by predictable V_GS(th) and low Q_g. Use Value: Enables sub-100 μs turn-on delay control with ±10 % tolerance, satisfying ARM big.LITTLE power-state transition specs.

Smartphone Load Switch

USB-C Input Protection

Use Scenario: Isolating main battery from USB-C port during hot-plug events to prevent backfeed and inrush surges.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET configured as active-low controlled load switch with fast turn-off (<130 ns t_d(off)).

Use Value: Prevents system reset during cable insertion by limiting peak inrush current to <2 A using controlled gate slew rate and low R_DS(on).

Use Scenario: Reverse-voltage and overvoltage protection for USB-C receptacle power pins in tablets.

IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET for bidirectional blocking; leverages symmetric V_DS rating and low threshold.

Use Value: Blocks -30 V faults while maintaining <190 mΩ total path resistance, preserving voltage headroom for 5 V/3 A operation.

Tablet PC Battery Disconnect

Mobile SoC Power-Rail Sequencing

Use Scenario: Safe disconnection of Li-ion battery during firmware-initiated shutdown or thermal fault.

IC Role / Device Role / Timing Role: High-current, low-loss disconnect switch placed between battery and PMIC input, driven by baseband processor GPIO.

Use Value: Achieves <0.5 V drop at 20 A due to 0.0235 Ω R_DS(on) @ -4.5 V, minimizing standby power loss and heat generation.

Use Scenario: Controlled ramp-up of SoC core voltage rails (e.g., GPU, CPU) to meet sequencing requirements.

IC Role / Device Role / Timing Role: Gate-controlled power switch enabling precise timing via RC-delayed gate drive; supported by predictable V_GS(th) and low Q_g.

Use Value: Enables sub-100 μs turn-on delay control with ±10 % tolerance, satisfying ARM big.LITTLE power-state transition specs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA403EDJ-T1-GE3	Higher R_DS(on) (0.026 Ω @ -4.5 V), same package and V_DS; lower I_D (-18 A)	Acceptable where <15 A peak current suffices and margin for thermal rise is available	Lower-cost option when full -24 A capability is not required; identical footprint and layout
DMN3026LSD-13	Same -30 V rating but SOT-23-6 package; R_DS(on) = 0.028 Ω @ -4.5 V; no UIS testing	Less suitable for high-reliability portable applications due to larger R_thJA (60 °C/W) and absence of 100 % UIS screening	Only consider if board space allows SOT-23-6 and avalanche robustness is not mission-critical

Compared with SiA403EDJ-T1-GE3 and DMN3026LSD-13, the SIA453EDJ-T1-GE3 delivers superior thermal performance (5.3 °C/W R_thJC vs. ≥8 °C/W), lower gate charge for faster switching, and production-screened UIS reliability - making it the preferred choice for high-density, high-reliability mobile power switches.

Availability

SIA453EDJ-T1-GE3 is available at Aetrix Electronics and suitable for smartphone load switching, USB-C input protection, and tablet battery disconnect applications requiring stable component supply, RoHS-compliant sourcing, and consistent lead-time visibility.

Supply support for SIA453EDJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and miniaturization.

The PowerPAK® SC-70 family was designed specifically for space-constrained portable electronics, delivering trench-based low-R_DS(on) performance in sub-2 mm² footprints - directly addressing the needs of smartphone, tablet, and wearable power architecture teams.

FAQ

What is the maximum continuous drain current for SIA453EDJ-T1-GE3 at 70 °C case temperature?

The SIA453EDJ-T1-GE3 supports -19 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® SC-70 package and must be validated against actual PCB copper area and airflow in the end application. The SIA453EDJ-T1-GE3 datasheet confirms this value under steady-state conditions with proper thermal design.

Does SIA453EDJ-T1-GE3 require a gate resistor for stable operation in load-switch applications?

The SIA453EDJ-T1-GE3 does not require an external gate resistor for basic on/off switching, but a 10 Ω series resistor is recommended to dampen ringing caused by its low gate resistance (R_g = 1.8–18 Ω) and high C_iss (1900 pF). This improves EMI performance and prevents false triggering in noisy environments. The SIA453EDJ-T1-GE3 application note AN826 confirms this practice for SC-70-6L layouts.

Can SIA453EDJ-T1-GE3 be used in reverse-voltage protection circuits with 5 V input?

Yes - the SIA453EDJ-T1-GE3 is commonly deployed in reverse-voltage protection with 5 V inputs using high-side P-channel configuration. Its -30 V V_DS rating provides ample margin, and its -0.6 V to -1.4 V V_GS(th) ensures full enhancement with standard 3.3 V or 5 V logic-level gate drive. The SIA453EDJ-T1-GE3 body diode forward voltage (V_SD = -0.85 to -1.2 V) is also well-characterized for such use cases.

Is SIA453EDJ-T1-GE3 suitable for synchronous rectification in DC-DC converters?

No - the SIA453EDJ-T1-GE3 is not optimized for synchronous rectification due to its relatively high Q_rr (20–40 nC) and t_rr (22–45 ns), which increase switching losses in high-frequency buck converters. It is engineered for load switching and protection, not high-frequency power conversion. For synchronous rectification, Vishay recommends dedicated low-Q_rr N-channel devices like SiR872DP. The SIA453EDJ-T1-GE3 datasheet does not specify figures of merit for converter topologies.

What is the thermal resistance from junction to ambient (R_thJA) for SIA453EDJ-T1-GE3 on a standard FR4 board?

The SIA453EDJ-T1-GE3 has a typical R_thJA of 28 °C/W and maximum of 36 °C/W when mounted on a 1" × 1" FR4 board with 2 oz copper, per the Thermal Resistance Ratings table. This value assumes no additional heatsinking and is measured under t ≤ 5 s pulse conditions. For continuous operation, derate based on actual board layout - the SIA453EDJ-T1-GE3 thermal model in AN826 provides pad layout guidance to achieve this spec.

SIA453EDJ-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 18.5mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 19W (Tc)

Operating Temperature:: -50°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6

SIA453EDJ-T1-GE3 FAQ

1.How can I place an order for SIA453EDJ-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA453EDJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA453EDJ-T1-GE3 reliable?

The price and inventory of SIA453EDJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA453EDJ-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIA453EDJ-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA453EDJ-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA453EDJ-T1-GE3?

SIA453EDJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA453EDJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA453EDJ-T1-GE3?

For technical support, including SIA453EDJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA453EDJ-T1-GE3 requirements.

6.How does Aetrix verify that SIA453EDJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA453EDJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA453EDJ-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIA453EDJ-T1-GE3?

All SIA453EDJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA453EDJ-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA453EDJ-T1-GE3 part is unused and in its original packaging.

Return procedure for SIA453EDJ-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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