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Vishay Siliconix SIA456DJ-T3-GE3
- Part No.:
- SIA456DJ-T3-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SC-70-6
- Datasheet:
-
SIA456DJ-T3-GE3.pdf
- Description:
- MOSFET N-CH 200V 1.1A/2.6A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,649
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Product details
Overview
SIA456DJ-T3-GE3 from Vishay Siliconix is an N-channel 200 V (D-S) TrenchFET® power MOSFET in a thermally enhanced PowerPAK® SC-70-6L package, delivering RDS(on) = 1.08 Ω at VGS = 4.5 V, 0.75 A, with 5 nC total gate charge and 2.6 A continuous drain current at TC = 25 °C - optimized for compact boost converters in portable power systems.
For engineers reviewing the SIA456DJ-T3-GE3 datasheet, SIA456DJ-T3-GE3 pinout, SIA456DJ-T3-GE3 application, or SIA456DJ-T3-GE3 equivalent, key selection criteria include its low on-resistance at logic-level drive (1.38 Ω max at VGS = 4.5 V), 200 V breakdown rating, thermal resistance of 5.3 °C/W (junction-to-case), and compatibility with space-constrained PCB layouts requiring high-voltage switching in battery-powered devices.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve high voltage blocking (200 V VDS) while maintaining low gate charge (5 nC typical at VGS = 4.5 V) and fast switching (td(on) = 10 ns, tf = 20–30 ns). Its threshold voltage range (0.6–1.4 V) supports reliable turn-on with 1.8 V–4.5 V logic-level gate drivers.
The device integrates a body diode with VSD = 0.8–1.2 V at IS = 0.9 A and reverse recovery time trr = 40–80 ns, enabling use in discontinuous conduction mode (DCM) boost topologies where diode conduction and recovery behavior directly impact efficiency and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports input-to-output voltage step-up in 12–48 V input boost stages without avalanche stress. |
| RDS(on) max @ VGS = 4.5 V | 1.38 Ω - enables <2.8 W conduction loss at 0.75 A, critical for thermally constrained portable PCBs. |
| Qg typ. | 5 nC - reduces gate drive power and allows use of low-current microcontroller GPIOs or small gate drivers. |
| ID continuous @ TC = 25 °C | 2.6 A - sufficient for >10 W boost output with margin under case-cooled conditions. |
| RthJC max. | 6.5 °C/W - permits direct thermal coupling to copper pour or small heatsink for sustained 1.5–2 A operation. |
| VGS(th) | 0.6–1.4 V - ensures robust turn-on with 1.8 V and higher logic supplies, minimizing false triggering. |
| tr/tf | 20–40 ns - balances switching speed against EMI generation in noise-sensitive portable applications. |
Pinout & Package
Package: PowerPAK® SC-70-6L - leadless, surface-mount, 2.05 mm × 2.05 mm footprint with exposed drain paddle for thermal and electrical performance. Compatible with standard reflow profiles (peak 260 °C); manual soldering not recommended.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 4, 5, 6 | Drain (D) | Internally connected to exposed copper paddle - primary current path and thermal conduction path to PCB. |
| 2 | Gate (G) | Control terminal; low 2 Ω gate resistance minimizes ringing and simplifies driver design. |
| 3 | Source (S) | Reference node for gate drive; tied to power ground in boost switch configuration. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers 200 V breakdown with sub-1.4 Ω RDS(on) at 4.5 V drive - enabling high-efficiency, high-voltage switching in minimal area. |
| PowerPAK® SC-70-6L package | 2.05 mm × 2.05 mm footprint with 4 drain pins + exposed paddle - achieves 5.3 °C/W junction-to-case thermal resistance without added heatsink. |
| Low Qg / Qgd ratio | 5 nC total gate charge, 1.7 nC gate-drain charge - improves Miller immunity and enables stable 1–2 MHz switching in boost regulators. |
| Body diode with soft recovery | trr = 40–80 ns, Qrr = 40–80 nC - reduces voltage overshoot and EMI during diode commutation in DCM boost operation. |
| Logic-level gate threshold | VGS(th) = 0.6–1.4 V - ensures full enhancement using 1.8 V, 2.5 V, or 3.3 V microcontroller outputs without level-shifting. |
Applications
| Portable USB-C PD Adapters | Medical Wearable Battery Chargers |
|---|---|
|
Use Scenario: Step-up converter in 5 V–20 V USB-C power delivery adapters, operating in DCM at ~500 kHz to generate 9–20 V output from single-cell Li-ion. IC Role / Device Role / Timing Role: High-side synchronous switch controlling energy transfer into output capacitor; body diode conducts during off-time. Use Value: 1.38 Ω RDS(on) at 4.5 V drive minimizes conduction loss in compact 10–15 W designs; 200 V rating accommodates transient overvoltage without clamping. |
Use Scenario: Boost stage in wearable ECG or glucose monitor chargers, converting 3.7 V battery to regulated 5 V for USB charging circuitry. IC Role / Device Role / Timing Role: Primary switching element in low-noise, low-quiescent-current boost IC reference design. Use Value: Low 5 nC Qg reduces gate drive losses and enables efficient operation at light loads (<10 mA), extending battery runtime. |
| Industrial Sensor Node Power Supplies | IoT Asset Tracker DC-DC Converters |
|
Use Scenario: Compact 3.3 V–12 V boost converter powering LoRaWAN or NB-IoT transceivers from coin-cell or small Li-SOCl₂ batteries. IC Role / Device Role / Timing Role: Main power switch in high-efficiency, low-IQ boost regulator supporting intermittent transmit bursts. Use Value: 0.6–1.4 V VGS(th) ensures reliable turn-on even as battery voltage drops to 2.5 V, maintaining regulation until end-of-life. |
Use Scenario: Voltage booster in GPS-enabled asset trackers, stepping up 3.6 V Li-SOCl₂ cell to 5 V for GSM module and MCU during periodic transmission. IC Role / Device Role / Timing Role: High-voltage switch handling 200 V transients from inductive load switching and ESD events. Use Value: 200 V VDS rating provides margin against load-dump spikes and electrostatic discharge, improving field reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiA403DJ-T3-GE3 | Lower VDS = 100 V; RDS(on) = 0.75 Ω @ 4.5 V; same PowerPAK SC-70-6L package and pinout. | Not suitable for >100 V bus or transient-prone environments; limited to lower-input boost or buck-boost topologies. | Select when system maximum VDS stress remains below 80 V and lower on-resistance is prioritized over voltage margin. |
| DMN2053UVT-7 | VDS = 200 V; RDS(on) = 1.4 Ω @ 4.5 V; SOT-23-6 package (larger 2.9 mm × 2.8 mm footprint). | Higher RthJA (120 °C/W vs. 36 °C/W) limits power handling; requires larger PCB area and less thermal performance. | Choose only if legacy SOT-23-6 layout exists and thermal derating to ≤0.8 A is acceptable. |
Compared with SiA403DJ-T3-GE3 and DMN2053UVT-7, the SIA456DJ-T3-GE3 uniquely combines 200 V rating, sub-1.4 Ω on-resistance at logic-level drive, and ultra-compact PowerPAK SC-70-6L thermal performance - making it the optimal choice for new portable boost designs demanding both voltage headroom and space efficiency.
Availability
SIA456DJ-T3-GE3 is available at Aetrix Electronics and suitable for portable USB-C PD adapters, medical wearable battery chargers, and industrial sensor node power supplies requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.
Supply support for SIA456DJ-T3-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal reliability, and miniaturization.
The SIA456DJ-T3-GE3 belongs to Vishay's TrenchFET® PowerPAK® SC-70 family, engineered specifically for space-constrained, high-voltage DC-DC conversion in portable and battery-powered electronics.
FAQ
What is the maximum continuous drain current for SIA456DJ-T3-GE3 at 70 °C case temperature?
The SIA456DJ-T3-GE3 supports 2.1 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 2.6 A rating at 25 °C and must be applied when ambient or board-level heating raises the MOSFET case temperature - critical for sustained operation in enclosed portable enclosures.
Does SIA456DJ-T3-GE3 have a guaranteed RDS(on) at 1.8 V gate drive?
Yes, the SIA456DJ-T3-GE3 has a maximum RDS(on) of 3.50 Ω at VGS = 1.8 V and ID = 0.1 A, per the Product Summary table. This specification confirms usable on-state resistance down to 1.8 V logic levels, supporting direct interface with low-voltage microcontrollers and PMICs without gate boosting.
Can SIA456DJ-T3-GE3 be used in synchronous rectification configurations?
No - the SIA456DJ-T3-GE3 is a single N-channel MOSFET intended for high-side switching, not synchronous rectification. Its body diode is optimized for boost freewheeling, not bidirectional conduction. For synchronous rectification, a matched dual-N or N+P pair with complementary timing control is required; SIA456DJ-T3-GE3 does not support that topology.
What is the thermal resistance from junction to ambient for SIA456DJ-T3-GE3 under standard mounting conditions?
The SIA456DJ-T3-GE3 has a maximum junction-to-ambient thermal resistance (RthJA) of 36 °C/W when mounted on a 1" × 1" FR4 board, per the Thermal Resistance Ratings table. This value applies to the standard JEDEC test board and is essential for estimating temperature rise in non-heatsinked applications - actual performance improves significantly with additional copper pour or thermal vias.
Is the PowerPAK SC-70-6L package of SIA456DJ-T3-GE3 lead-free and halogen-free?
Yes, the SIA456DJ-T3-GE3 is marked "-GE3", indicating compliance with lead-free and halogen-free requirements per Vishay's material categorization standards. The device meets RoHS Directive 2011/65/EU and is compatible with standard Pb-free reflow soldering profiles up to 260 °C peak temperature.
SIA456DJ-T3-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SC-70-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.1A (Ta), 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 1.38Ohm @ 750mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.5 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 350 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.5W (Ta), 19W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SC-70-6
SIA456DJ-T3-GE3 FAQ
1.How can I place an order for SIA456DJ-T3-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIA456DJ-T3-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIA456DJ-T3-GE3 reliable?
The price and inventory of SIA456DJ-T3-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA456DJ-T3-GE3 is usually 5 days.
3.What payment methods are accepted for SIA456DJ-T3-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA456DJ-T3-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIA456DJ-T3-GE3?
SIA456DJ-T3-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIA456DJ-T3-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIA456DJ-T3-GE3?
For technical support, including SIA456DJ-T3-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA456DJ-T3-GE3 requirements.
6.How does Aetrix verify that SIA456DJ-T3-GE3 is sourced from the original manufacturer or authorized distributors?
All SIA456DJ-T3-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA456DJ-T3-GE3 meets industry standards.
7.What is the process for return or replacement of SIA456DJ-T3-GE3?
All SIA456DJ-T3-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA456DJ-T3-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIA456DJ-T3-GE3 part is unused and in its original packaging.
Return procedure for SIA456DJ-T3-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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