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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA462DJ-T4-GE3

Name: SIA462DJ-T4-GE3
Brand: Vishay Siliconix
SKU: SIA462DJ-T4-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIA462DJ-T4-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SIA462DJ-T4-GE3.pdf

Description:: MOSFET N-CH 30V 12A/12A PPAK

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Product details

Overview

SIA462DJ-T4-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Power MOSFET in a PowerPAK SC-70-6L package, rated for 12 A continuous drain current at T_J = 150 °C, with R_DS(on) = 0.018 Ω at V_GS = 10 V and Q_g = 5 nC (typ.) - optimized for high-efficiency synchronous buck converters in space-constrained DC/DC applications.

For engineers reviewing the SIA462DJ-T4-GE3 datasheet, SIA462DJ-T4-GE3 pinout, SIA462DJ-T4-GE3 application, or SIA462DJ-T4-GE3 equivalent, key selection criteria include its low gate charge for fast switching, 0.85 V body diode forward voltage at 10 A, and thermal resistance R_thJA = 28 °C/W (typ.) on FR4 - critical for thermally demanding point-of-load designs.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(on) and high transconductance (g_fs = 35 S), enabling efficient power switching at high frequencies. Its gate threshold voltage (V_GS(th) = 1.2–2.4 V) supports logic-level drive from 3.3 V and 5 V controllers.

The device integrates a robust body diode with t_rr = 20–40 ns and Q_rr = 11–20 nC, reducing shoot-through risk and ringing in synchronous rectification. Thermal design is guided by R_thJC = 5.3 °C/W (typ.) and R_thJA = 28 °C/W (t ≤ 5 s, 1" × 1" FR4).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage compatible with 24 V input rails and transient margin
R_DS(on) @ V_GS = 10 V	0.018 Ω (max) - enables <18 mW conduction loss at 10 A, critical for high-current POL stages
Q_g	5 nC (typ. at V_GS = 4.5 V) - reduces gate driver power and switching transition time
I_D (continuous)	12 A @ T_C = 25 °C - supports compact, high-density converter layouts without forced cooling
V_SD	0.85 V (typ. at I_S = 10 A) - lowers reverse conduction loss during dead-time in synchronous buck topologies
t_r/t_f	10–20 ns (typ.) - minimizes overlap loss and EMI generation in MHz-range switching
R_thJA	28 °C/W (typ., t ≤ 5 s, 1" × 1" FR4) - defines thermal derating curve for ambient-limited operation

Pinout & Package

Package: PowerPAK® SC-70-6L - leadless, surface-mount, 2.05 mm × 2.05 mm footprint with exposed drain paddle for enhanced thermal performance. Bottom-side solder interconnection is achieved via the copper paddle; no solder fillet required at singulated edge.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6	Drain (D)	Internally connected to exposed copper paddle - primary heat path to PCB ground plane
5	Gate (G)	Control terminal - low C_iss (570 pF) and R_g (0.2–2 Ω) enable stable high-speed drive
3 (shared)	Source (S)	Common source node - pins 3 and 5 are electrically isolated; pin 3 is source, pin 5 is gate

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.015 Ω (typ.) R_DS(on) at V_GS = 10 V, enabling higher efficiency than planar MOSFETs in same package
100 % R_g tested	Ensures consistent gate drive timing and eliminates batch-to-batch variation in switching speed
Low Q_gd/Q_g ratio	Q_gd = 1.6 nC / Q_g = 5 nC → 32 % - improves hard-switching immunity and Miller immunity
Body diode t_rr < 40 ns	Reduces reverse recovery energy loss and associated voltage spikes in synchronous rectification
Lead (Pb)-free and Halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709A - suitable for green manufacturing

Applications

Point-of-Load (POL) DC/DC Converters	Synchronous Buck Converters
Use Scenario: High-current, low-voltage regulation (e.g., 12 V input to 1.2 V/10 A output) in server VRMs and FPGA power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch - commutates current during bottom-half of switching cycle. Use Value: 0.018 Ω R_DS(on) and 0.85 V V_SD reduce both conduction and reverse recovery losses, improving full-load efficiency by >1.2 % vs. comparable 30 V MOSFETs.	Use Scenario: Compact, high-frequency (500 kHz–2 MHz) buck regulators in telecom base station power modules. IC Role / Device Role / Timing Role: High-efficiency power switch with fast turn-off (t_f = 10–20 ns) to minimize dead-time losses. Use Value: 5 nC Q_g (at 4.5 V) allows direct drive from PWM controllers without external buffer, simplifying layout and reducing BOM count.
USB-C PD Power Delivery	Industrial Motor Control Drivers
Use Scenario: Secondary-side synchronous rectification in 20–100 W USB-C PD adapters with tight thermal constraints. IC Role / Device Role / Timing Role: Low-V_GS(th) (1.2–2.4 V) N-channel switch enabling self-driven synchronous rectification using transformer auxiliary winding. Use Value: Low V_SD (0.85 V) and fast t_rr (20–40 ns) suppress output voltage overshoot and improve cross-regulation under dynamic load steps.	Use Scenario: Half-bridge gate drivers for 24 V BLDC motor control in factory automation actuators. IC Role / Device Role / Timing Role: High-side or low-side switch in discrete half-bridge configurations requiring fast, low-loss switching. Use Value: R_thJC = 5.3 °C/W enables direct mounting to metal-core PCBs, sustaining 12 A continuous current without heatsink in ambient ≤ 70 °C.

Point-of-Load (POL) DC/DC Converters

Synchronous Buck Converters

Use Scenario: High-current, low-voltage regulation (e.g., 12 V input to 1.2 V/10 A output) in server VRMs and FPGA power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch - commutates current during bottom-half of switching cycle.

Use Value: 0.018 Ω R_DS(on) and 0.85 V V_SD reduce both conduction and reverse recovery losses, improving full-load efficiency by >1.2 % vs. comparable 30 V MOSFETs.

Use Scenario: Compact, high-frequency (500 kHz–2 MHz) buck regulators in telecom base station power modules.

IC Role / Device Role / Timing Role: High-efficiency power switch with fast turn-off (t_f = 10–20 ns) to minimize dead-time losses.

Use Value: 5 nC Q_g (at 4.5 V) allows direct drive from PWM controllers without external buffer, simplifying layout and reducing BOM count.

USB-C PD Power Delivery

Industrial Motor Control Drivers

Use Scenario: Secondary-side synchronous rectification in 20–100 W USB-C PD adapters with tight thermal constraints.

IC Role / Device Role / Timing Role: Low-V_GS(th) (1.2–2.4 V) N-channel switch enabling self-driven synchronous rectification using transformer auxiliary winding.

Use Value: Low V_SD (0.85 V) and fast t_rr (20–40 ns) suppress output voltage overshoot and improve cross-regulation under dynamic load steps.

Use Scenario: Half-bridge gate drivers for 24 V BLDC motor control in factory automation actuators.

IC Role / Device Role / Timing Role: High-side or low-side switch in discrete half-bridge configurations requiring fast, low-loss switching.

Use Value: R_thJC = 5.3 °C/W enables direct mounting to metal-core PCBs, sustaining 12 A continuous current without heatsink in ambient ≤ 70 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA403DJ-T1-GE3	R_DS(on) = 0.022 Ω (max) at V_GS = 10 V; Q_g = 6.5 nC (typ.) - higher conduction and gate drive loss	Same PowerPAK SC-70-6L package and pinout - drop-in replacement where 0.018 Ω is not required	Select when cost sensitivity outweighs 0.004 Ω R_DS(on) penalty and 1.5 nC higher Q_g is acceptable
DMN3028LSD-13	R_DS(on) = 0.028 Ω (max) at V_GS = 10 V; SO-8 package - larger footprint, higher R_thJA = 50 °C/W	SO-8 footprint requires PCB redesign; higher thermal resistance limits current density	Choose only if legacy SO-8 layout reuse is mandatory and 12 A continuous rating can be met with added heatsinking

Compared with SiA403DJ-T1-GE3 and DMN3028LSD-13, the SIA462DJ-T4-GE3 delivers the lowest R_DS(on) and gate charge in the SC-70-6L form factor, enabling higher power density and efficiency in thermally constrained POL and adapter designs - without requiring layout changes.

Availability

SIA462DJ-T4-GE3 is available at Aetrix Electronics and suitable for point-of-load DC/DC converters, synchronous buck regulators, and USB-C PD power delivery systems requiring stable component supply and long-term industrial availability.

Supply support for SIA462DJ-T4-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIA462DJ-T4-GE3 belongs to Vishay's TrenchFET® Gen IV family - engineered specifically for high-frequency, high-current DC/DC conversion in space- and thermally-constrained applications such as computing, telecom, and portable power.

FAQ

What is the maximum continuous drain current rating for the SIA462DJ-T4-GE3 at 70 °C case temperature?

The SIA462DJ-T4-GE3 is rated for 12 A continuous drain current at T_C = 70 °C, per the Absolute Maximum Ratings table. This rating is based on package thermal limits and assumes proper PCB copper area for heat dissipation. Derating begins above 70 °C case temperature, reaching 9.7 A at T_C = 70 °C under specified test conditions (1" × 1" FR4 board). The SIA462DJ-T4-GE3 maintains this current capability without requiring external heatsinking in typical applications.

Does the SIA462DJ-T4-GE3 support 3.3 V logic-level gate drive?

Yes, the SIA462DJ-T4-GE3 has a gate threshold voltage V_GS(th) of 1.2–2.4 V and delivers R_DS(on) = 0.022 Ω (max) at V_GS = 4.5 V and I_D = 7 A - confirming reliable enhancement-mode operation with 3.3 V microcontroller or PWM controller outputs. Its low Q_g (5 nC typ. at 4.5 V) further ensures fast, low-power switching under 3.3 V drive. The SIA462DJ-T4-GE3 is therefore well-suited for direct logic-level interfacing without level-shifting circuitry.

What is the thermal resistance from junction to ambient for the SIA462DJ-T4-GE3 on a standard PCB?

The SIA462DJ-T4-GE3 has a typical junction-to-ambient thermal resistance R_thJA of 28 °C/W when mounted on a 1" × 1" FR4 board with 1 oz copper, per the datasheet's test condition (t ≤ 5 s). The maximum value is 36 °C/W under the same conditions. This value is critical for estimating junction temperature rise: T_J = T_A + (P_tot × R_thJA). The SIA462DJ-T4-GE3 leverages its PowerPAK SC-70-6L exposed drain paddle to achieve this competitive R_thJA.

How does the body diode performance of the SIA462DJ-T4-GE3 compare to standard MOSFETs in synchronous rectification?

The SIA462DJ-T4-GE3 features a fast, low-V_SD body diode with V_SD = 0.85 V (typ.) at I_S = 10 A and reverse recovery time t_rr = 20–40 ns - significantly faster and lower forward drop than standard trench MOSFETs. This reduces dead-time conduction loss and voltage overshoot in synchronous buck converters. The SIA462DJ-T4-GE3's Q_rr of 11–20 nC further minimizes recovery energy, making it especially effective in high-frequency, high-current POL applications.

Is the SIA462DJ-T4-GE3 pin-compatible with other PowerPAK SC-70-6L MOSFETs like the SiA403DJ-T1-GE3?

Yes, the SIA462DJ-T4-GE3 shares identical PowerPAK SC-70-6L mechanical dimensions, pad layout, and pin assignment (Drain on pins 1/2/3/4/6, Gate on pin 5, Source on pin 3) with the SiA403DJ-T1-GE3 and other members of Vishay's SC-70-6L MOSFET family. This enables direct PCB footprint reuse. The SIA462DJ-T4-GE3 offers improved R_DS(on) and lower Q_g over the SiA403DJ-T1-GE3 while maintaining full mechanical and electrical compatibility in the same package.

SIA462DJ-T4-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta), 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 570 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 19W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6

SIA462DJ-T4-GE3 FAQ

1.How can I place an order for SIA462DJ-T4-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA462DJ-T4-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA462DJ-T4-GE3 reliable?

The price and inventory of SIA462DJ-T4-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA462DJ-T4-GE3 is usually 5 days.

3.What payment methods are accepted for SIA462DJ-T4-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA462DJ-T4-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA462DJ-T4-GE3?

SIA462DJ-T4-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA462DJ-T4-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA462DJ-T4-GE3?

For technical support, including SIA462DJ-T4-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA462DJ-T4-GE3 requirements.

6.How does Aetrix verify that SIA462DJ-T4-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA462DJ-T4-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA462DJ-T4-GE3 meets industry standards.

7.What is the process for return or replacement of SIA462DJ-T4-GE3?

All SIA462DJ-T4-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA462DJ-T4-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA462DJ-T4-GE3 part is unused and in its original packaging.

Return procedure for SIA462DJ-T4-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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