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Vishay Siliconix SIA465EDJ-T1-GE3
- Part No.:
- SIA465EDJ-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SC-70-6
- Datasheet:
-
SIA465EDJ-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 12A PPAK SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:4,290
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Product details
Overview
SIA465EDJ-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in PowerPAK® SC-70-6L package, rated for -20 V drain-source voltage, 0.0165 Ω RDS(on) at VGS = -4.5 V, and -12 A continuous drain current at TC = 25 °C, designed for high-efficiency load switching in space-constrained mobile power rails.
For engineers reviewing the SIA465EDJ-T1-GE3 datasheet, SIA465EDJ-T1-GE3 pinout, SIA465EDJ-T1-GE3 application, or SIA465EDJ-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values, gate charge metrics, ESD protection rating, and validated alternative parts for battery switch, charger switch, and load switch design validation.
Technical Context
This device uses trench-based silicon architecture to achieve low on-resistance with fast switching performance: total gate charge is 23 nC at VGS = -4.5 V, with turn-on delay of 25 ns and fall time of 20 ns under standard test conditions. Its thermally enhanced PowerPAK SC-70 package delivers RthJC = 5.3 °C/W (typical) and RthJA = 28 °C/W (typical) on FR4 board.
The integrated Zener diode provides built-in ESD protection rated at 2000 V HBM, and the gate-source threshold voltage is specified between -0.5 V and -1.2 V at ID = -250 μA. Body diode forward voltage is -0.8 V (typ) at IS = -9.5 A, with reverse recovery time of 15 ns and Qrr = 5 nC.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for battery-side high-side switching in 3.3 V–5 V systems |
| RDS(on) | 0.0165 Ω max at VGS = -4.5 V - Enables <15 mW conduction loss at 12 A load current |
| ID (cont) | -12 A at TC = 25 °C - Supports high-current load switching without external heatsink |
| Qg | 23 nC typ at VGS = -4.5 V - Low gate drive energy enables efficient operation with low-power controllers |
| RthJA | 28 °C/W typical - Thermal performance suitable for compact PCB layouts with minimal copper area |
| ESD Rating | 2000 V HBM - Integrated Zener protection reduces need for external ESD components |
| VGS(th) | -0.5 V to -1.2 V - Ensures reliable turn-on with standard logic-level gate drivers |
Pinout & Package
PowerPAK® SC-70-6L is a leadless surface-mount package measuring 2.05 mm × 2.05 mm × 0.75 mm (max), with exposed drain pads on bottom side for thermal and electrical connection. Pin 1 is marked by notch or dot; top view shows G-S-D-D-D-S arrangement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Primary current return path; tied to system ground or battery negative in high-side switch configuration |
| 2 | Drain | Main power output terminal; connected to load; electrically and thermally coupled to bottom-side exposed pad |
| 3 | Drain | Parallel drain connection; reduces current density and improves thermal spreading across package |
| 4 | Drain | Additional parallel drain connection; enhances current handling and thermal dissipation |
| 5 | Drain | Fourth drain terminal; ensures low-inductance, low-resistance path to PCB copper pour |
| 6 | Gate | Control input; requires <1.2 Ω gate resistance for optimal switching speed and ringing suppression |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables ultra-low RDS(on) in sub-2 mm² footprint, critical for portable device battery management |
| Thermally enhanced PowerPAK SC-70 | Exposes drain terminals on bottom side for direct thermal coupling to PCB copper, lowering junction temperature rise |
| 100 % Rg tested | Guarantees gate resistance between 1.2 Ω and 12 Ω, ensuring consistent switching timing across production lots |
| Built-in Zener ESD protection | Eliminates need for discrete TVS on gate line in consumer-grade mobile applications |
| Low Qgd/Qg ratio | 6.7 nC / 23 nC ≈ 0.29 - Improves hard-switching robustness and reduces Miller-induced shoot-through risk |
Applications
| Smartphone Battery Switch | USB-C Charger Switch |
|---|---|
|
Use Scenario: Isolating main Li-ion battery during charging or fault conditions in slim smartphone designs. IC Role / Device Role / Timing Role: High-side load switch controlling battery connection to system rail with fast turn-off (<50 ns fall time). Use Value: 0.0165 Ω RDS(on) limits voltage drop to <200 mV at 12 A, preserving battery runtime and enabling accurate fuel gauging. |
Use Scenario: Enabling/disabling power path from USB-C PD source to internal PMIC in dual-input power architectures. IC Role / Device Role / Timing Role: Reverse-polarity protected load switch with body diode conducting during dead-time transitions. Use Value: -0.8 V VSD and 15 ns trr minimize conduction loss and reverse recovery spikes during dynamic load changes. |
| Tablet PC Load Switch | Mobile SSD Power Gate |
|
Use Scenario: Sequencing power to display backlight, camera module, or LTE modem in tablet PCs with strict thermal budgets. IC Role / Device Role / Timing Role: Controlled power enable switch with gate driven by GPIO or dedicated load switch controller. Use Value: RthJA = 28 °C/W allows full 12 A operation on 1" × 1" FR4 without thermal derating, reducing BOM count. |
Use Scenario: Isolating NVMe SSD power domain during sleep states to meet platform-level standby current targets (<100 μA). IC Role / Device Role / Timing Role: Low-leakage P-channel switch with IDSS ≤ -1 μA at VDS = -20 V and TJ = 25 °C. Use Value: Sub-μA off-state leakage prevents battery drain over multi-week storage, meeting JEDEC JESD22-A108 reliability requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiA403EDJ-T1-GE3 | RDS(on) = 0.022 Ω @ -4.5 V; lower Qg (15 nC); same PowerPAK SC-70-6L package | Higher on-resistance increases conduction loss by ~33% at 12 A; better for ultra-low-drive applications | Select when gate drive capability is limited but moderate RDS(on) is acceptable |
| DMN2023LFG-7 | RDS(on) = 0.015 Ω @ -4.5 V; slightly smaller 1.6 mm × 1.6 mm WDFN package; no built-in ESD diode | Requires external ESD protection; tighter layout constraints but higher power density | Choose for space-critical designs where external ESD components are already present |
Compared with SIA465EDJ-T1-GE3, SiA403EDJ-T1-GE3 trades 33% higher RDS(on) for 35% lower gate charge, while DMN2023LFG-7 offers marginally lower on-resistance in a smaller footprint but removes integrated ESD protection-requiring additional layout and component overhead.
Availability
SIA465EDJ-T1-GE3 is available at Aetrix Electronics and suitable for smartphone battery switches, USB-C charger switches, and tablet PC load switches requiring stable component supply, Pb-free/halogen-free compliance, and AEC-Q200–aligned manufacturing traceability.
Supply support for SIA465EDJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The SIA465EDJ-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK SC-70 family, engineered specifically for high-current, low-voltage load switching in portable electronics where board space and thermal performance are critical.
FAQ
What is the maximum continuous drain current rating for SIA465EDJ-T1-GE3 at 70 °C case temperature?
The SIA465EDJ-T1-GE3 supports -12 A continuous drain current at TC = 70 °C, per the Absolute Maximum Ratings table. This reflects derating from its 19 W PD limit at TC = 25 °C and confirms suitability for sustained high-current operation in thermally managed mobile modules where case temperature remains below 70 °C.
Does SIA465EDJ-T1-GE3 include integrated ESD protection, and what is its rating?
Yes, SIA465EDJ-T1-GE3 includes built-in Zener diode ESD protection rated at 2000 V per Human Body Model (HBM), as confirmed in the Features section and Typical ESD Performance note. This eliminates the need for external gate-protection components in most consumer-grade smartphone and tablet applications.
What is the gate-source threshold voltage range for SIA465EDJ-T1-GE3, and how does it affect drive compatibility?
The gate-source threshold voltage VGS(th) for SIA465EDJ-T1-GE3 is specified from -0.5 V to -1.2 V at ID = -250 μA. This low-threshold range ensures full enhancement with standard 3.3 V or 4.5 V logic-level gate drivers, enabling reliable turn-on even with marginal gate drive margins in battery-powered systems.
Can SIA465EDJ-T1-GE3 be used in high-frequency PWM applications, and what gate charge metrics support this?
Yes, SIA465EDJ-T1-GE3 is suitable for high-frequency PWM load switching, with total gate charge Qg = 23 nC (typ) at VGS = -4.5 V and gate resistance Rg = 1.2–12 Ω (tested). These values enable clean 1 MHz+ switching with minimal driver power loss, as validated by 25 ns turn-on delay and 20 ns fall time in the datasheet.
What is the thermal resistance from junction to ambient (RthJA) for SIA465EDJ-T1-GE3 on a standard FR4 board?
The typical junction-to-ambient thermal resistance RthJA for SIA465EDJ-T1-GE3 is 28 °C/W when mounted on a 1" × 1" FR4 board, per the Thermal Resistance Ratings table. This value assumes standard soldering per Vishay doc#73257 and enables accurate junction temperature estimation for thermal design validation of the SIA465EDJ-T1-GE3 in real-world layouts.
SIA465EDJ-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SC-70-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 16.5mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 72 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2130 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 19W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SC-70-6 Single
SIA465EDJ-T1-GE3 FAQ
1.How can I place an order for SIA465EDJ-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIA465EDJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIA465EDJ-T1-GE3 reliable?
The price and inventory of SIA465EDJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA465EDJ-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIA465EDJ-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA465EDJ-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIA465EDJ-T1-GE3?
SIA465EDJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIA465EDJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIA465EDJ-T1-GE3?
For technical support, including SIA465EDJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA465EDJ-T1-GE3 requirements.
6.How does Aetrix verify that SIA465EDJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIA465EDJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA465EDJ-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIA465EDJ-T1-GE3?
All SIA465EDJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA465EDJ-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIA465EDJ-T1-GE3 part is unused and in its original packaging.
Return procedure for SIA465EDJ-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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