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Vishay Siliconix SIA472EDJ-T1-GE3
- Part No.:
- SIA472EDJ-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SC-70-6
- Datasheet:
-
SIA472EDJ-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 12A PPAK SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:5,800
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Product details
Overview
SIA472EDJ-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Power MOSFET in a thermally enhanced PowerPAK® SC-70-6L package, delivering RDS(on) = 0.0200 Ω at VGS = 4.5 V, 12 A continuous drain current (TC = 25 °C), and 11.6 nC total gate charge - optimized for high-efficiency load switching and DC/DC converter synchronous rectification.
For engineers reviewing the SIA472EDJ-T1-GE3 datasheet, SIA472EDJ-T1-GE3 pinout, SIA472EDJ-T1-GE3 application, or SIA472EDJ-T1-GE3 equivalent, key selection criteria include its low RDS(on) at 2.5 V gate drive, 2500 V HBM ESD rating, 100 % Rg and UIS tested reliability, and suitability for space-constrained OVP and boost converter designs requiring minimal footprint and thermal resistance.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching dynamics: typical Ciss = 1265 pF, Coss = 132 pF, and Qgd = 2.2 nC at VDS = 15 V, enabling efficient operation in high-frequency DC/DC topologies. Its gate threshold voltage (VGS(th)) ranges 0.6–1.5 V, supporting robust turn-on with 2.5 V logic-level drive.
The device integrates a body diode with VSD = 0.8–1.2 V at IS = 8.6 A and trr = 15–23 ns, making it suitable for synchronous rectification where reverse recovery performance impacts efficiency. Thermal design is supported by RthJC = 5.3 °C/W (max 6.5 °C/W) and RthJA = 28–36 °C/W on FR4.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - supports input rails up to 24 V nominal with 20 % margin for transients in industrial and portable power systems. |
| RDS(on) @ 4.5 V | 0.0200 Ω - enables ≤216 mW conduction loss at 12 A, critical for thermally constrained load switches. |
| ID Continuous | 12 A @ TC = 25 °C - delivers high current density in 2.05 mm × 2.05 mm footprint without external heatsink. |
| Qg @ 4.5 V | 11.6 nC - reduces gate drive power and switching losses in 500 kHz–1 MHz DC/DC converters. |
| VGS(th) | 0.6–1.5 V - ensures reliable enhancement-mode turn-on with standard 2.5 V/3.3 V microcontroller GPIOs. |
| EAS | 11.25 mJ - withstands single-pulse inductive energy in load-switch fault conditions without failure. |
| RthJC | 5.3 °C/W (typ) - allows direct thermal coupling to PCB copper for effective junction-to-board heat transfer. |
Pinout & Package
PowerPAK® SC-70-6L single-die package: 2.05 mm × 2.05 mm footprint, 0.75 mm height, leadless construction with exposed drain paddle on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain | Primary high-current output node; electrically and thermally connected to exposed bottom paddle. |
| 2 | Drain | Parallel drain connection to reduce package inductance and improve current sharing. |
| 3 | Source | Return path for load current; referenced to gate drive ground in high-side or low-side configurations. |
| 4 | Drain | Third drain terminal enhancing thermal dissipation and reducing RDS(on) parasitic contribution. |
| 5 | Drain | Fourth drain terminal completing low-inductance, multi-point drain connection to PCB copper. |
| 6 | Gate | Control input; requires <15 μA leakage budget and 0.6–1.5 V threshold for logic-level compatibility. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Enables 0.0200 Ω RDS(on) at 4.5 V in SC-70 package - 35 % lower on-resistance than planar equivalents at same size. |
| Thermally enhanced PowerPAK® SC-70 | Exposes drain paddle on bottom for direct PCB thermal path - achieves 5.3 °C/W RthJC, outperforming standard SC-70 by >40 %. |
| 2500 V HBM ESD rating | Eliminates need for external ESD protection in handheld and USB-powered applications during board assembly and field use. |
| 100 % Rg and UIS tested | Guarantees gate resistance ≤6.6 Ω and avalanche ruggedness ≥15 A/11.25 mJ - critical for automotive and industrial reliability. |
| Low Qgd/Qg ratio | Qgd = 2.2 nC / Qg = 11.6 nC = 0.19 - improves Miller immunity and enables stable 1 MHz switching without oscillation. |
Applications
| Load Switch for Portable Devices | OVP Protection Circuit |
|---|---|
Use Scenario: Power sequencing and hot-swap control in battery-powered IoT sensors and wearables with 3.3 V/5 V rails. IC Role / Device Role: Low-side load switch controlling power delivery to subsystems (e.g., BLE radio, sensor array) with fast enable/disable. Use Value: 0.0200 Ω RDS(on) limits voltage drop to <240 mV at 12 A, preserving battery runtime; 2.5 V logic compatibility enables direct MCU GPIO drive. | Use Scenario: Overvoltage protection in USB-C PD adapters and industrial 24 V input modules subjected to surge events. IC Role / Device Role: High-speed clamping switch that disconnects downstream circuitry when input exceeds safe threshold. Use Value: 11.25 mJ EAS rating absorbs transient energy without failure; 12 A continuous rating handles sustained overcurrent during fault clearing. |
| Boost Converter Synchronous Rectifier | DC/DC Converter High-Side Switch |
Use Scenario: Secondary-side rectification in 5 V → 12 V boost converters for PoE-powered devices and LED drivers. IC Role / Device Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 85 %. Use Value: Body diode VSD = 0.8–1.2 V and trr = 15–23 ns minimize reverse recovery loss; low Qg enables precise gate timing control. | Use Scenario: High-side switch in buck-derived isolated DC/DC modules for PLC I/O and motor control interfaces. IC Role / Device Role: Main power switch operating at 300–500 kHz with integrated bootstrap gate drive support. Use Value: RDS(on) = 0.0263 Ω at 2.5 V ensures stable turn-on under worst-case gate drive; 30 V VDS accommodates reflected spikes in transformer-coupled topologies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiA403DJ-T1-GE3 | RDS(on) = 0.032 Ω @ 4.5 V; 9.5 A ID; same PowerPAK SC-70-6L package. | Lower current handling and higher on-resistance - suited for ≤8 A load switches where thermal margin is less constrained. | Select when cost sensitivity outweighs 33 % higher conduction loss and reduced peak current capability. |
| DMN3020LSD-13 | RDS(on) = 0.022 Ω @ 4.5 V; 11 A ID; SO-8 package (larger footprint, higher RthJA). | SO-8 thermal resistance ~60 °C/W vs. 28 °C/W - requires more PCB copper area but offers easier rework and higher pulse current margin. | Choose when board-level repairability, higher pulse current (IDM = 40 A), or legacy SO-8 layout reuse is prioritized over miniaturization. |
Compared with SIA472EDJ-T1-GE3, SiA403DJ-T1-GE3 trades 33 % higher RDS(on) for lower unit cost in space-tolerant designs, while DMN3020LSD-13 sacrifices 2.5× footprint area to gain SO-8 manufacturability and 33 % higher pulsed current - making SIA472EDJ-T1-GE3 optimal for ultra-compact, high-efficiency 12 A switching where thermal performance is paramount.
Availability
SIA472EDJ-T1-GE3 is available at Aetrix Electronics and suitable for load switch, OVP protection, and DC/DC converter applications requiring stable component supply, Pb-free/halogen-free compliance, and consistent parametric performance across production lots.
Supply support for SIA472EDJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.
The PowerPAK® SC-70 MOSFET product line targets space-constrained power management in portable, industrial, and automotive systems - engineered to deliver high current density, low thermal resistance, and logic-level gate drive in sub-3 mm² packages.
FAQ
What is the maximum continuous drain current for SIA472EDJ-T1-GE3 at 70 °C case temperature?
The SIA472EDJ-T1-GE3 supports 12 A continuous drain current at TC = 70 °C, matching its rating at 25 °C due to the thermal design of the PowerPAK® SC-70-6L package. This reflects its ability to sustain full current under elevated board temperatures without derating, provided adequate PCB copper area is used for heat spreading. The SIA472EDJ-T1-GE3 datasheet confirms this value in the Absolute Maximum Ratings table under "Continuous Drain Current (TJ = 150 °C)".
Does SIA472EDJ-T1-GE3 support 2.5 V logic-level gate drive?
Yes, the SIA472EDJ-T1-GE3 is fully specified for 2.5 V gate drive: RDS(on) = 0.0263 Ω max at VGS = 2.5 V and ID = 9.4 A, with VGS(th) guaranteed between 0.6 V and 1.5 V. This ensures strong enhancement-mode turn-on using standard 2.5 V microcontroller outputs or level-shifted signals. The SIA472EDJ-T1-GE3's low threshold range eliminates the need for gate boosters in most portable and low-voltage industrial designs.
What is the thermal resistance from junction to ambient for SIA472EDJ-T1-GE3 on a standard FR4 board?
The SIA472EDJ-T1-GE3 has a typical junction-to-ambient thermal resistance (RthJA) of 28 °C/W and a maximum of 36 °C/W when mounted on a 1" × 1" FR4 board per the datasheet test condition. This value assumes no additional heatsinking and reflects the effectiveness of the exposed drain paddle in conducting heat into the PCB. For thermal design, the SIA472EDJ-T1-GE3's RthJA enables ~3.5 W power dissipation before reaching TJ = 150 °C at 25 °C ambient.
Is SIA472EDJ-T1-GE3 suitable for synchronous rectification in boost converters?
Yes, the SIA472EDJ-T1-GE3 is well-suited for synchronous rectification in boost converters due to its low RDS(on) (0.0200 Ω @ 4.5 V), fast body diode (trr = 15–23 ns, Qrr = 7–14 nC), and low Qgd/Qg ratio (0.19). These characteristics reduce both conduction and switching losses compared to Schottky diodes, especially at >100 kHz frequencies. The SIA472EDJ-T1-GE3's 30 V rating also provides sufficient margin for typical boost output voltages up to 24 V.
What does the "-GE3" suffix indicate in SIA472EDJ-T1-GE3?
The "-GE3" suffix in SIA472EDJ-T1-GE3 denotes Vishay's green, lead (Pb)-free and halogen-free packaging standard compliant with RoHS Directive 2011/65/EU and JEDEC JS-001. It specifies matte tin plating on terminals, absence of brominated flame retardants, and full traceability per Vishay's material declaration policy. All SIA472EDJ-T1-GE3 units meet these environmental requirements without performance compromise - identical specs to non-GE3 variants.
SIA472EDJ-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SC-70-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 10.8A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1265 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 19.2W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SC-70-6 Single
SIA472EDJ-T1-GE3 FAQ
1.How can I place an order for SIA472EDJ-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIA472EDJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIA472EDJ-T1-GE3 reliable?
The price and inventory of SIA472EDJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA472EDJ-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIA472EDJ-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA472EDJ-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIA472EDJ-T1-GE3?
SIA472EDJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIA472EDJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIA472EDJ-T1-GE3?
For technical support, including SIA472EDJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA472EDJ-T1-GE3 requirements.
6.How does Aetrix verify that SIA472EDJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIA472EDJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA472EDJ-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIA472EDJ-T1-GE3?
All SIA472EDJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA472EDJ-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIA472EDJ-T1-GE3 part is unused and in its original packaging.
Return procedure for SIA472EDJ-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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