Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA483ADJ-T1-GE3

Name: SIA483ADJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA483ADJ-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIA483ADJ-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SIA483ADJ-T1-GE3.pdf

Description:: MOSFET P-CH 30V 10.6A/12A PPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,705

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIA483ADJ-T1-GE3 from Vishay Siliconix is a P-channel 30 V (D-S) enhancement-mode MOSFET in PowerPAK® SC-70-6L package, rated for -12 A continuous drain current at T_C = 25 °C, with R_DS(on) of 0.020 Ω at V_GS = -10 V and 0.033 Ω at V_GS = -4.5 V, optimized for high-efficiency load switching in space-constrained battery-powered systems.

For engineers reviewing the SIA483ADJ-T1-GE3 datasheet, SIA483ADJ-T1-GE3 pinout, SIA483ADJ-T1-GE3 application, or SIA483ADJ-T1-GE3 equivalent, key selection criteria include gate threshold voltage (-1 to -2.5 V), low Q_g (8.3 nC typ. at V_GS = -4.5 V), thermally enhanced leadless package, and body diode performance (V_SD = -0.85 V typ. at I_S = -10 A).

Technical Context

This TrenchFET® Gen IV device uses a trench-gate structure to achieve low R_DS(on) × Q_g figure-of-merit for fast switching in DC/DC converters and load switches. Its -30 V V_DS rating supports common 12 V and 24 V rail applications while maintaining robust avalanche capability.

The PowerPAK® SC-70-6L package features exposed-drain thermal pads on the bottom side and a 2.05 mm × 2.05 mm footprint, enabling high power density without external heatsinking. Gate drive compatibility with standard logic-level controllers is ensured by V_GS(th) range of -1 V to -2.5 V and ±100 nA I_GSS leakage.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum drain-source blocking voltage for 12–24 V system rails
R_DS(on) @ V_GS = -10 V	0.020 Ω - Enables <1 W conduction loss at -10 A, critical for thermal management
R_DS(on) @ V_GS = -4.5 V	0.033 Ω - Supports direct logic-level drive from 3.3 V/5 V microcontrollers
Q_g typ. @ V_GS = -4.5 V	8.3 nC - Low gate charge reduces switching losses and driver stress in high-frequency operation
I_D continuous @ T_C = 25 °C	-12 A - Sustains full load current with case temperature monitoring
V_GS(th)	-1 to -2.5 V - Ensures reliable turn-on with standard digital outputs and avoids partial conduction
R_thJA max.	37 °C/W - Defines worst-case junction-to-ambient thermal resistance for PCB layout planning

Pinout & Package

PowerPAK® SC-70-6L is a 2.05 mm × 2.05 mm, 6-terminal, leadless surface-mount package with exposed drain pads on the bottom side for enhanced thermal performance. The top-side pin numbering follows standard orientation with Pin 1 at top-left corner.

Pin/Terminal	Circuit Role	Design Meaning
1	Drain	Primary high-current path; connected to internal die drain and bottom-side thermal pad
2	Drain	Parallel drain connection; improves current sharing and thermal spreading
3	Gate	Control terminal; requires ≤±16 V drive; 100% R_g tested (1.5–15 Ω)
4	Drain	Third drain terminal; contributes to low-inductance, multi-point drain routing
5	Drain	Fourth drain terminal; enhances thermal dissipation via PCB copper fill
6	Source	Reference node for gate drive and current sensing; tied to system ground in high-side switch configurations

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Delivers industry-leading R_DS(on) × Q_g FOM for reduced switching + conduction losses
Thermally enhanced PowerPAK® SC-70	Enables 17.9 W power dissipation at T_C = 25 °C with minimal PCB area
100% R_g tested	Guarantees gate resistance between 1.5 Ω and 15 Ω for predictable drive timing
Low V_GS(th) variation	ΔV_GS(th)/T_J = 5 mV/°C ensures stable turn-on behavior across -55 to +150 °C
Optimized body diode	V_SD = -0.85 V typ. at -10 A and t_rr = 19 ns enable efficient synchronous rectification

Applications

Battery Protection Circuit	USB-C Load Switch
Use Scenario: Reverse-polarity and overcurrent protection in portable power banks and smart battery packs. IC Role / Device Role / Timing Role: High-side P-channel MOSFET used as active OR-ing switch and fault-isolation element. Use Value: Low R_DS(on) minimizes voltage drop during charging; -30 V rating withstands accidental 24 V input surges.	Use Scenario: Hot-swap control for USB-C PD power delivery paths in laptops and docking stations. IC Role / Device Role / Timing Role: Load switch managing 5–20 V VBUS rail with controlled inrush and fast fault response. Use Value: 8.3 nC Q_g enables <100 ns turn-on with standard gate drivers; compact SC-70 fits tight connector zones.
Wearable Device PMIC	Industrial Sensor Node Power Path
Use Scenario: Power sequencing and rail enablement in hearables and fitness trackers with Li-ion batteries. IC Role / Device Role / Timing Role: Low-quiescent-load power switch controlling subsystem power domains (e.g., BLE radio, display). Use Value: -2.5 V max V_GS(th) ensures clean turn-on from 3.3 V LDOs; 100 nA I_GSS preserves battery shelf life.	Use Scenario: Isolation of analog sensor front-ends from noisy digital subsystems in condition-monitoring nodes. IC Role / Device Role / Timing Role: Precision load switch providing rail decoupling and fault containment in 24 V industrial fieldbus systems. Use Value: -30 V V_DS and 60 A pulsed rating handle inductive kickback; R_thJC = 5.5 °C/W supports ambient >85 °C operation.

Battery Protection Circuit

USB-C Load Switch

Use Scenario: Reverse-polarity and overcurrent protection in portable power banks and smart battery packs.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET used as active OR-ing switch and fault-isolation element.

Use Value: Low R_DS(on) minimizes voltage drop during charging; -30 V rating withstands accidental 24 V input surges.

Use Scenario: Hot-swap control for USB-C PD power delivery paths in laptops and docking stations.

IC Role / Device Role / Timing Role: Load switch managing 5–20 V VBUS rail with controlled inrush and fast fault response.

Use Value: 8.3 nC Q_g enables <100 ns turn-on with standard gate drivers; compact SC-70 fits tight connector zones.

Wearable Device PMIC

Industrial Sensor Node Power Path

Use Scenario: Power sequencing and rail enablement in hearables and fitness trackers with Li-ion batteries.

IC Role / Device Role / Timing Role: Low-quiescent-load power switch controlling subsystem power domains (e.g., BLE radio, display).

Use Value: -2.5 V max V_GS(th) ensures clean turn-on from 3.3 V LDOs; 100 nA I_GSS preserves battery shelf life.

Use Scenario: Isolation of analog sensor front-ends from noisy digital subsystems in condition-monitoring nodes.

IC Role / Device Role / Timing Role: Precision load switch providing rail decoupling and fault containment in 24 V industrial fieldbus systems.

Use Value: -30 V V_DS and 60 A pulsed rating handle inductive kickback; R_thJC = 5.5 °C/W supports ambient >85 °C operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA403DJ-T1-GE3	V_DS = -20 V, R_DS(on) = 0.028 Ω @ -4.5 V, Q_g = 6.2 nC, same PowerPAK SC-70-6L package	Limited to ≤20 V systems; lower gate charge suits ultra-low-power wake-up circuits	Select when operating voltage is strictly ≤12 V and lowest possible switching loss is prioritized over voltage margin
DMN3026LSD-13	V_DS = -30 V, R_DS(on) = 0.026 Ω @ -4.5 V, Q_g = 10.5 nC, SO-8 package (larger footprint, higher R_thJA)	Requires more PCB area; higher thermal resistance (50 °C/W) demands additional copper pour	Choose when board space allows SO-8 and higher peak current (16 A) or improved manufacturability with gull-wing leads is needed

Compared with SIA483ADJ-T1-GE3, SiA403DJ-T1-GE3 trades voltage headroom for lower Q_g, while DMN3026LSD-13 sacrifices miniaturization for higher current capacity and easier rework-making SIA483ADJ-T1-GE3 optimal for space-constrained 24 V load switching where thermal density matters most.

Availability

SIA483ADJ-T1-GE3 is available at Aetrix Electronics and suitable for battery charging and management, load switch, and DC/DC converter applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIA483ADJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The SIA483ADJ-T1-GE3 belongs to Vishay's TrenchFET® Gen IV P-channel MOSFET family, engineered specifically for high-density, low-voltage load switching in portable and wearable electronics where thermal performance and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current rating for SIA483ADJ-T1-GE3 at 70 °C case temperature?

The SIA483ADJ-T1-GE3 supports -12 A continuous drain current at T_C = 70 °C, matching its rating at 25 °C due to the thermal design of the PowerPAK® SC-70-6L package. This reflects its ability to sustain full load under elevated thermal conditions without derating, provided the PCB provides adequate copper area for heat spreading. The -12 A rating is confirmed in the Absolute Maximum Ratings table under "Continuous drain current (T_J = 150 °C)".

Does SIA483ADJ-T1-GE3 support 3.3 V logic-level gate drive?

Yes, the SIA483ADJ-T1-GE3 is fully compatible with 3.3 V logic-level gate drive. Its V_GS(th) range of -1 V to -2.5 V ensures strong turn-on at V_GS = -3.3 V, and its R_DS(on) of 0.033 Ω at V_GS = -4.5 V confirms robust conduction even below nominal logic levels. This eliminates need for level-shifting circuitry in microcontroller-based load switch designs.

What is the thermal resistance from junction to case (R_thJC) for SIA483ADJ-T1-GE3?

The SIA483ADJ-T1-GE3 has a typical junction-to-case (drain) thermal resistance of 5.5 °C/W and a maximum of 7 °C/W, as specified in the Thermal Resistance Ratings table. This low value is enabled by the exposed-drain construction of the PowerPAK® SC-70-6L package and is critical for estimating junction temperature rise when mounting on thermally optimized PCBs with internal or external copper planes.

Can SIA483ADJ-T1-GE3 be used in reverse-battery protection circuits?

Yes, the SIA483ADJ-T1-GE3 is commonly deployed in reverse-battery protection due to its P-channel configuration, -30 V V_DS rating, and low R_DS(on). When placed in the high-side position with source tied to battery positive, it blocks reverse current flow while introducing minimal forward voltage drop (<33 mV at 1 A). Its body diode orientation supports this topology without external diodes.

Is SIA483ADJ-T1-GE3 halogen-free and RoHS-compliant?

Yes, the SIA483ADJ-T1-GE3 is both lead (Pb)-free and halogen-free, as explicitly stated in the Ordering Information section. It complies with RoHS Directive 2011/65/EU and Vishay's material categorization standards per document www.vishay.com/doc?99912. The "-GE3" suffix denotes green, halogen-free, and RoHS-compliant packaging.

SIA483ADJ-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 10.6A (Ta), 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: +16V, -20V

Input Capacitance (Ciss) (Max) @ Vds:: 950 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.4W (Ta), 17.9W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6

SIA483ADJ-T1-GE3 FAQ

1.How can I place an order for SIA483ADJ-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA483ADJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA483ADJ-T1-GE3 reliable?

The price and inventory of SIA483ADJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA483ADJ-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIA483ADJ-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA483ADJ-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA483ADJ-T1-GE3?

SIA483ADJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA483ADJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA483ADJ-T1-GE3?

For technical support, including SIA483ADJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA483ADJ-T1-GE3 requirements.

6.How does Aetrix verify that SIA483ADJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA483ADJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA483ADJ-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIA483ADJ-T1-GE3?

All SIA483ADJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA483ADJ-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA483ADJ-T1-GE3 part is unused and in its original packaging.

Return procedure for SIA483ADJ-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …