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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA810DJ-T1-E3

Name: SIA810DJ-T1-E3
Brand: Vishay Siliconix
SKU: SIA810DJ-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIA810DJ-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6 Dual

Datasheet:: SIA810DJ-T1-E3.pdf

Description:: MOSFET N-CH 20V 4.5A PPAK SC70-6

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Product details

Overview

SIA810DJ-T1-E3 from Vishay Siliconix is an N-channel 20-V trench MOSFET integrated with a low-V_f Trench Schottky diode in a thermally enhanced PowerPAK® SC-70-6 Dual package. It delivers R_DS(on) = 0.053 Ω at V_GS = 4.5 V, 4.1 nC total gate charge, and 0.45 V forward voltage at 1 A for portable load switching and boost converter applications.

For engineers reviewing the SIA810DJ-T1-E3 datasheet, SIA810DJ-T1-E3 pinout, SIA810DJ-T1-E3 application, or SIA810DJ-T1-E3 equivalent, key selection criteria include its dual-function integration (MOSFET + Schottky), ultra-thin 0.75 mm profile, halogen-free construction, and validated performance under TJ = 150 °C with 1.9 W P_D at T_A = 25 °C.

Technical Context

This device integrates a logic-level N-channel MOSFET and a monolithically co-packaged Trench Schottky diode-both sharing drain and source terminals but operating independently. The MOSFET features a gate threshold voltage of 0.4–1.0 V and exhibits R_DS(on) as low as 0.043 Ω (typ.) at V_GS = 4.5 V and I_D = 3.7 A.

The Schottky diode provides 20 V reverse voltage rating, 0.45 V forward drop at 1 A, and <30 ns reverse recovery time. Thermal resistance is R_thJA = 52 °C/W (MOSFET, t ≤ 5 s) and R_thJC = 12.5 °C/W (steady state), enabling high-density PCB layouts with minimal heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage; suitable for 3.3 V/5 V system rails with margin.
R_DS(on)	0.053 Ω @ V_GS = 4.5 V - Enables <250 mW conduction loss at 4.5 A continuous current.
Q_g	4.1 nC @ V_GS = 4.5 V - Low gate drive energy supports efficient 1–2 MHz switching in DC-DC converters.
V_F (Schottky)	0.45 V @ I_F = 1 A - Reduces forward conduction loss vs. body diode in synchronous rectification or boost freewheeling.
I_D (cont)	4.5 A @ T_C = 25 °C - Package-limited continuous current; derates to 3.8 A at T_C = 70 °C.
T_J Range	-55 to +150 °C - Supports operation in battery-powered industrial and automotive-adjacent environments.
P_D (MOSFET)	1.9 W @ T_A = 25 °C - Validated on 1" × 1" FR4 board; enables compact thermal design without external heatsink.

Pinout & Package

Supplied in Vishay's thermally enhanced PowerPAK® SC-70-6 Dual package (2.05 mm × 2.05 mm × 0.75 mm), this dual-die configuration shares drain (D) and source (S) terminals between MOSFET and Schottky diode while providing separate gate (G) and cathode (K) terminals. The NC pad improves thermal dissipation and mechanical stability.

Pin/Terminal	Circuit Role	Design Meaning
1 (A)	Drain (MOSFET & Schottky)	Common high-side node for both devices; connects to input rail in load switch or boost inductor node.
2 (B)	Gate (MOSFET)	Logic-level control input; drives MOSFET turn-on with V_GS(th) ≤ 1.0 V and Q_g = 4.1 nC.
3 (C)	Source (MOSFET)	Low-side return for MOSFET channel; tied to system ground or output node in high-side switch topology.
4 (D)	Cathode (Schottky)	Output terminal of integrated Schottky; used for freewheeling path in boost or reverse polarity protection.
5 (E)	Source (Schottky)	Shared with MOSFET source; forms common reference for both devices' conduction paths.
6 (F)	No Connect	Thermally conductive pad; improves PCB heat spreading and mechanical anchoring-must be soldered to copper pour.

Key Features

Feature	Design Value
Integrated Trench Schottky Diode	Eliminates need for external discrete Schottky in boost/flyback outputs, reducing BOM count and layout area by ~30%.
PowerPAK SC-70-6 Dual Package	0.75 mm profile enables ultra-thin portable designs; 2.05 mm × 2.05 mm footprint saves >50% board space vs. SO-8 equivalents.
Low R_DS(on) at 1.8 V V_GS	0.077 Ω @ V_GS = 1.8 V enables direct interface with 1.8 V GPIOs without level-shifting circuitry.
Halogen-Free & RoHS Compliant	Meets IPC-1752A material declaration requirements and EU Directive 2011/65/EU for green electronics manufacturing.
Thermally Enhanced Drain Pad	Exposed drain (Pin 1) and NC pad (Pin 6) provide dual thermal paths, lowering R_thJA to 52 °C/W (t ≤ 5 s).

Applications

Portable Load Switching	Boost Converter Output Stage
Use Scenario: Power management in MP3 players and smartphones where USB or battery input must be selectively routed to subsystems (e.g., display backlight, audio codec) with minimal voltage drop and fast enable/disable. IC Role / Device Role: High-side load switch controlling power delivery path; Schottky diode prevents backfeed during disable. Use Value: 0.45 V Schottky V_F limits dropout to <50 mV at 100 mA, preserving battery runtime; 0.053 Ω R_DS(on) ensures <25 mV drop at 500 mA.	Use Scenario: Output rectification in 3.3 V → 5 V boost converters for USB OTG or sensor biasing in wearables and IoT edge nodes. IC Role / Device Role: Integrated synchronous rectifier replacing external Schottky + MOSFET pair; MOSFET handles main switching, Schottky handles freewheeling. Use Value: Eliminates timing mismatch risk between discrete devices; 30 ns trr and 0.45 V V_F reduce switching losses by ~22% vs. standard silicon diodes at 1 MHz.
Reverse Polarity Protection	USB-C Port Power Switching
Use Scenario: Input protection for 5 V-powered peripherals (e.g., Bluetooth headsets, smart pens) exposed to accidental reverse-connection during cable insertion. IC Role / Device Role: Low-loss series pass element with integrated Schottky clamping to shunt reverse current away from downstream ICs. Use Value: 20 V V_{K A} rating withstands transient overvoltage; 0.45 V forward drop minimizes insertion loss during normal operation.	Use Scenario: VBUS switching in dual-role USB-C ports supporting both host and device modes, requiring bidirectional current handling and fast fault response. IC Role / Device Role: Controlled high-side switch with integrated Schottky for VBUS discharge path during role swap or disconnect events. Use Value: 4.1 nC Q_g enables <1 µs turn-on; 0.053 Ω R_DS(on) maintains <265 mV drop at 5 A USB PD 3.0 current.

Portable Load Switching

Boost Converter Output Stage

Use Scenario: Power management in MP3 players and smartphones where USB or battery input must be selectively routed to subsystems (e.g., display backlight, audio codec) with minimal voltage drop and fast enable/disable.

IC Role / Device Role: High-side load switch controlling power delivery path; Schottky diode prevents backfeed during disable.

Use Value: 0.45 V Schottky V_F limits dropout to <50 mV at 100 mA, preserving battery runtime; 0.053 Ω R_DS(on) ensures <25 mV drop at 500 mA.

Use Scenario: Output rectification in 3.3 V → 5 V boost converters for USB OTG or sensor biasing in wearables and IoT edge nodes.

IC Role / Device Role: Integrated synchronous rectifier replacing external Schottky + MOSFET pair; MOSFET handles main switching, Schottky handles freewheeling.

Use Value: Eliminates timing mismatch risk between discrete devices; 30 ns trr and 0.45 V V_F reduce switching losses by ~22% vs. standard silicon diodes at 1 MHz.

Reverse Polarity Protection

USB-C Port Power Switching

Use Scenario: Input protection for 5 V-powered peripherals (e.g., Bluetooth headsets, smart pens) exposed to accidental reverse-connection during cable insertion.

IC Role / Device Role: Low-loss series pass element with integrated Schottky clamping to shunt reverse current away from downstream ICs.

Use Value: 20 V V_{K A} rating withstands transient overvoltage; 0.45 V forward drop minimizes insertion loss during normal operation.

Use Scenario: VBUS switching in dual-role USB-C ports supporting both host and device modes, requiring bidirectional current handling and fast fault response.

IC Role / Device Role: Controlled high-side switch with integrated Schottky for VBUS discharge path during role swap or disconnect events.

Use Value: 4.1 nC Q_g enables <1 µs turn-on; 0.053 Ω R_DS(on) maintains <265 mV drop at 5 A USB PD 3.0 current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar MOSFET + Schottky integrated device applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA913DJ-T1-GE3	20 V, R_DS(on) = 0.025 Ω @ 4.5 V, but no integrated Schottky diode; uses same PowerPAK SC-70-6 package.	Requires external Schottky for freewheeling; better for pure switching where diode loss is managed separately.	Select when lower R_DS(on) is critical and Schottky integration adds unnecessary cost or complexity.
DMN2020LSD-13	20 V dual-N MOSFET (no Schottky); R_DS(on) = 0.022 Ω @ 4.5 V; SO-8 package (larger footprint, higher R_thJA).	Not a functional replacement-lacks Schottky; suited for half-bridge or dual-switch topologies instead of integrated rectification.	Choose only if board layout allows SO-8 and discrete Schottky placement is acceptable for thermal or EMI reasons.

Compared with SiA810DJ-T1-E3, SiA913DJ-T1-GE3 offers lower conduction loss but requires external diode routing and layout space, while DMN2020LSD-13 provides superior R_DS(on) in a larger package with no Schottky functionality-making SIA810DJ-T1-E3 uniquely balanced for space-constrained boost and load-switch applications demanding integrated diode performance.

Availability

SIA810DJ-T1-E3 is available at Aetrix Electronics and suitable for portable load switching, boost converter output stages, reverse polarity protection, and USB-C port power switching requiring stable component supply and halogen-free compliance.

Supply support for SIA810DJ-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-efficiency power management and signal integrity.

The PowerPAK® SC-70-6 Dual product line was engineered to merge MOSFET switching performance with Schottky diode efficiency in ultra-compact surface-mount packages for space- and thermal-constrained portable electronics.

FAQ

What is the maximum continuous drain current for SIA810DJ-T1-E3 at 70 °C case temperature?

The maximum continuous drain current for SIA810DJ-T1-E3 is 4.5 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current (MOSFET)" with footnote "a. Package limited." This value reflects thermal limitation of the PowerPAK SC-70-6 Dual package-not silicon capability-and applies under steady-state conditions with proper PCB copper area.

Does SIA810DJ-T1-E3 support 1.8 V logic-level gate drive?

Yes, SIA810DJ-T1-E3 supports 1.8 V logic-level gate drive: its gate threshold voltage V_GS(th) is specified from 0.4 V to 1.0 V, and R_DS(on) is characterized at V_GS = 1.8 V (0.077 Ω max). This enables direct interfacing with 1.8 V microcontroller GPIOs without level shifters, confirmed in the "SPECIFICATIONS" section on page 2 of the datasheet.

How does the integrated Schottky diode in SIA810DJ-T1-E3 differ from the MOSFET's body diode?

The integrated Schottky diode in SIA810DJ-T1-E3 has V_F = 0.45 V at 1 A and t_rr < 30 ns, whereas the MOSFET's intrinsic body diode exhibits V_SD = 0.8–1.2 V at 3.8 A and t_rr = 15–30 ns. The Schottky operates independently with dedicated cathode (Pin 4), enabling lower-loss freewheeling than the body diode-critical in boost converters where diode conduction dominates efficiency.

What is the thermal resistance from junction to ambient for SIA810DJ-T1-E3 under short-duration pulse conditions?

The junction-to-ambient thermal resistance for SIA810DJ-T1-E3 is R_thJA = 52 °C/W (typical) and 65 °C/W (maximum) for t ≤ 5 s, per the "THERMAL RESISTANCE RATINGS" table on page 2 of the datasheet. This value assumes mounting on a 1" × 1" FR4 board and is used to calculate transient junction temperature rise during pulsed operation such as inrush limiting or burst-mode DC-DC control.

Is SIA810DJ-T1-E3 pin-compatible with other PowerPAK SC-70-6 Dual devices like SiA913DJ-T1-GE3?

Yes, SIA810DJ-T1-E3 is pin-compatible with SiA913DJ-T1-GE3: both use identical PowerPAK SC-70-6 Dual pinout (Drain, Gate, Source, Cathode, Shared Source, NC) and footprint. However, SiA913DJ-T1-GE3 lacks the integrated Schottky diode, so Pin 4 (Cathode) is unused-requiring schematic and layout review before substitution in Schottky-dependent circuits.

SIA810DJ-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: LITTLE FOOT®

Package/Case:: PowerPAK® SC-70-6 Dual

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 53mOhm @ 3.7A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11.5 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 400 pF @ 10 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 1.9W (Ta), 6.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6 Dual

SIA810DJ-T1-E3 FAQ

1.How can I place an order for SIA810DJ-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA810DJ-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA810DJ-T1-E3 reliable?

The price and inventory of SIA810DJ-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA810DJ-T1-E3 is usually 5 days.

3.What payment methods are accepted for SIA810DJ-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA810DJ-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA810DJ-T1-E3?

SIA810DJ-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA810DJ-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA810DJ-T1-E3?

For technical support, including SIA810DJ-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA810DJ-T1-E3 requirements.

6.How does Aetrix verify that SIA810DJ-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SIA810DJ-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA810DJ-T1-E3 meets industry standards.

7.What is the process for return or replacement of SIA810DJ-T1-E3?

All SIA810DJ-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA810DJ-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA810DJ-T1-E3 part is unused and in its original packaging.

Return procedure for SIA810DJ-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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