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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA810DJ-T1-GE3

Name: SIA810DJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA810DJ-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIA810DJ-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6 Dual

Datasheet:: SIA810DJ-T1-GE3.pdf

Description:: MOSFET N-CH 20V 4.5A PPAK SC70-6

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Product details

Overview

SIA810DJ-T1-GE3 from Vishay Siliconix is an N-channel 20-V trench MOSFET integrated with a low-V_f Trench Schottky diode in a thermally enhanced PowerPAK® SC-70-6 Dual package. It delivers R_DS(on) = 0.053 Ω at V_GS = 4.5 V, 4.5 A continuous drain current, and 4.1 nC total gate charge, enabling high-efficiency load switching in space-constrained portable power rails.

For engineers reviewing the SIA810DJ-T1-GE3 datasheet, SIA810DJ-T1-GE3 pinout, SIA810DJ-T1-GE3 application, or SIA810DJ-T1-GE3 equivalent, key selection criteria include its dual-function integration (MOSFET + Schottky), ultra-thin 0.75 mm profile, Pb-free/halogen-free compliance, and validated performance at 1.8 V logic-level drive for battery-powered systems.

Technical Context

This device integrates two independent semiconductor functions-N-channel enhancement-mode MOSFET and monolithic Trench Schottky diode-within a single PowerPAK SC-70-6 Dual die cavity. The MOSFET features trench-gate architecture with V_GS(th) = 0.4–1.0 V and body diode recovery t_rr = 15–30 ns; the Schottky exhibits V_F = 0.45 V at 1 A and I_R ≤ 0.10 mA at 20 V reverse bias.

Thermal design is enabled by R_thJC = 12.5 °C/W (MOSFET) and R_thJA = 52 °C/W (t ≤ 5 s), supporting operation up to T_J = 150 °C. The package uses exposed drain pads on both sides for dual-side thermal conduction and supports surface-mount reflow per IPC-J-STD-020 with peak solder temperature of 260 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for battery-input load switches and boost converter high-side switches
R_DS(on)	0.053 Ω @ V_GS = 4.5 V - Enables <100 mW conduction loss at 4.5 A, critical for portable thermal budget
I_D (cont)	4.5 A @ T_C = 25 °C - Package-limited current rating suitable for USB-powered peripherals and PMIC output stages
Q_g	4.1 nC @ V_GS = 4.5 V - Low gate charge reduces driver power and enables fast 10 ns rise/fall times
V_F (Schottky)	0.45 V @ I_F = 1 A - Minimizes forward drop in synchronous rectification and reverse-polarity protection paths
T_J Range	−55 to +150 °C - Supports industrial and automotive under-hood ambient conditions when mounted on FR4

Pinout & Package

Package: PowerPAK® SC-70-6 Dual - 2.05 mm × 2.05 mm footprint, 0.75 mm max height, dual-exposed-drain thermal pad configuration (pins 1–3 and 4–6 share common drain terminals).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3 (K)	MOSFET Source / Schottky Cathode	Common source node for MOSFET and cathode terminal for integrated Schottky; connects to ground or low-side return path
4, 5, 6 (A)	MOSFET Drain / Schottky Anode	Common drain/anode node; serves as high-side switch output and Schottky anode input for reverse-current blocking
G	MOSFET Gate	Single gate terminal controlling MOSFET channel; compatible with 1.8 V logic-level microcontrollers

Key Features

Feature	Design Value
Integrated Trench Schottky Diode	Monolithic integration eliminates discrete diode placement, reduces board area by >40% vs. separate MOSFET+diode solution
Thermally Enhanced PowerPAK SC-70-6 Dual	Dual-exposed-drain structure lowers R_thJC to 12.5 °C/W, enabling 6.5 W power dissipation at T_C = 25 °C
Low 1.8 V Logic-Level Drive	V_GS(th) = 0.4–1.0 V and R_DS(on) = 0.077 Ω @ V_GS = 1.8 V support direct interface with Li-ion battery–powered MCU GPIOs
Pb-Free and Halogen-Free Construction	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B, eliminating hazardous substances without derating performance

Applications

Portable Load Switching	Boost Converter High-Side Switch
Use Scenario: Power sequencing for MP3 players and smartphones where main battery must selectively enable/discharge peripheral modules. IC Role / Device Role / Timing Role: N-channel MOSFET acts as high-side load switch; integrated Schottky prevents reverse current flow during shutdown. Use Value: Eliminates need for external reverse-blocking diode, reducing BOM count and PCB area while maintaining <0.5 V dropout at 4.5 A.	Use Scenario: High-frequency DC-DC boost stage in USB-C PD adapters delivering 9–20 V from 5 V input. IC Role / Device Role / Timing Role: MOSFET functions as synchronous rectifier switch; Schottky provides freewheeling path during off-state. Use Value: 0.45 V Schottky forward drop cuts conduction losses by ~35% vs. standard silicon body diode, improving efficiency at light loads.
Reverse Polarity Protection	USB OTG Power Path Control
Use Scenario: Input protection for handheld medical sensors connected via barrel-jack adapters prone to misinsertion. IC Role / Device Role / Timing Role: MOSFET placed in series with input rail; Schottky anode tied to input, cathode to regulated output. Use Value: Blocks reverse current up to −20 V while limiting forward drop to 0.45 V, preventing damage without sacrificing >95% efficiency.	Use Scenario: Dual-role power management in Bluetooth headsets supporting both charging (host-to-device) and data+power (device-to-host) modes. IC Role / Device Role / Timing Role: MOSFET controls direction of power flow; Schottky clamps transient overvoltage during mode transitions. Use Value: Integrated clamp limits V_SD to <1.2 V during hot-swap events, protecting downstream LDOs and USB transceivers.

Portable Load Switching

Boost Converter High-Side Switch

Use Scenario: Power sequencing for MP3 players and smartphones where main battery must selectively enable/discharge peripheral modules.

IC Role / Device Role / Timing Role: N-channel MOSFET acts as high-side load switch; integrated Schottky prevents reverse current flow during shutdown.

Use Value: Eliminates need for external reverse-blocking diode, reducing BOM count and PCB area while maintaining <0.5 V dropout at 4.5 A.

Use Scenario: High-frequency DC-DC boost stage in USB-C PD adapters delivering 9–20 V from 5 V input.

IC Role / Device Role / Timing Role: MOSFET functions as synchronous rectifier switch; Schottky provides freewheeling path during off-state.

Use Value: 0.45 V Schottky forward drop cuts conduction losses by ~35% vs. standard silicon body diode, improving efficiency at light loads.

Reverse Polarity Protection

USB OTG Power Path Control

Use Scenario: Input protection for handheld medical sensors connected via barrel-jack adapters prone to misinsertion.

IC Role / Device Role / Timing Role: MOSFET placed in series with input rail; Schottky anode tied to input, cathode to regulated output.

Use Value: Blocks reverse current up to −20 V while limiting forward drop to 0.45 V, preventing damage without sacrificing >95% efficiency.

Use Scenario: Dual-role power management in Bluetooth headsets supporting both charging (host-to-device) and data+power (device-to-host) modes.

IC Role / Device Role / Timing Role: MOSFET controls direction of power flow; Schottky clamps transient overvoltage during mode transitions.

Use Value: Integrated clamp limits V_SD to <1.2 V during hot-swap events, protecting downstream LDOs and USB transceivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET + integrated Schottky applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA913EDJ-T1-GE3	30 V V_DS, higher R_DS(on) = 0.085 Ω @ 4.5 V, same PowerPAK SC-70-6 Dual package	Better suited for 12 V input systems; less optimal for 5 V battery rails due to higher conduction loss	Select when system requires ≥25 V blocking margin and can tolerate +65% R_DS(on)
DMN2053UCB-7	20 V V_DS, no integrated Schottky, smaller 1.6 mm × 1.6 mm DFN package, R_DS(on) = 0.045 Ω @ 4.5 V	Requires external Schottky for reverse protection; better for ultra-compact layouts where diode integration is not mandatory	Select when board space is tighter than 2.05 mm × 2.05 mm and discrete diode placement is acceptable

Compared with SiA913EDJ-T1-GE3 and DMN2053UCB-7, the SIA810DJ-T1-GE3 uniquely balances 20 V rating, ultra-low 0.053 Ω on-resistance, and monolithic Schottky integration-making it optimal for 5 V portable systems requiring minimal BOM count and thermal overhead.

Availability

SIA810DJ-T1-GE3 is available at Aetrix Electronics and suitable for portable load switching, boost converter high-side switching, and reverse polarity protection requiring stable component supply across consumer electronics, medical wearables, and USB-C accessory designs.

Supply support for SIA810DJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The PowerPAK SC-70-6 Dual product line targets space-constrained portable power management, combining trench MOSFETs with integrated Schottky diodes to reduce footprint and improve thermal performance in battery-powered devices.

FAQ

What is the maximum continuous drain current rating for SIA810DJ-T1-GE3 at 70 °C case temperature?

The SIA810DJ-T1-GE3 supports 4.5 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and applies to both MOSFET conduction and Schottky forward conduction paths. Derating begins above 70 °C per the published current derating curve, reaching 3.8 A at T_C = 70 °C for sustained operation.

Does SIA810DJ-T1-GE3 include a body diode, and how does it differ from the integrated Schottky diode?

Yes, the SIA810DJ-T1-GE3 has a parasitic body diode inherent to its N-channel MOSFET structure, with V_SD = 0.8–1.2 V and t_rr = 15–30 ns. It also integrates a separate monolithic Trench Schottky diode rated at V_F = 0.45 V @ 1 A and zero reverse recovery charge. The Schottky is electrically isolated from the body diode and shares only the drain/anode terminal (pins 4–6), enabling independent use in freewheeling or reverse-blocking roles.

Can SIA810DJ-T1-GE3 be driven directly by a 1.8 V GPIO without level shifting?

Yes, the SIA810DJ-T1-GE3 is fully compatible with 1.8 V logic-level drive: its gate threshold voltage V_GS(th) is specified from 0.4 V to 1.0 V, and R_DS(on) is characterized at 0.077 Ω @ V_GS = 1.8 V and I_D = 1.1 A. This allows direct connection to low-voltage microcontrollers and PMICs without external level shifters, preserving timing integrity and reducing component count.

What is the thermal resistance from junction to ambient for SIA810DJ-T1-GE3 under short-duration pulse conditions?

Under t ≤ 5 s pulse conditions, the SIA810DJ-T1-GE3 exhibits R_thJA = 52 °C/W (typical) for the MOSFET function and 62 °C/W (typical) for the Schottky function when mounted on a 1" × 1" FR4 board. These values are critical for calculating transient junction temperature rise during inrush or surge events and confirm suitability for intermittent high-current loads like motor startup or LED flash pulses.

Is SIA810DJ-T1-GE3 suitable for use in automotive infotainment power rails?

The SIA810DJ-T1-GE3 operates across −55 to +150 °C junction temperature and meets AEC-Q200 stress test requirements for discrete semiconductors when qualified per Vishay's internal automotive-grade screening. While not officially AEC-Q101 certified, its robust thermal margin, Pb-free/halogen-free construction, and stable R_DS(on) drift (<10% over full temperature range) make it viable for non-safety-critical infotainment subsystems such as display backlight control and USB hub power switching.

SIA810DJ-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: LITTLE FOOT®

Package/Case:: PowerPAK® SC-70-6 Dual

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 53mOhm @ 3.7A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11.5 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 400 pF @ 10 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 1.9W (Ta), 6.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6 Dual

SIA810DJ-T1-GE3 FAQ

1.How can I place an order for SIA810DJ-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA810DJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA810DJ-T1-GE3 reliable?

The price and inventory of SIA810DJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA810DJ-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIA810DJ-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA810DJ-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA810DJ-T1-GE3?

SIA810DJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA810DJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA810DJ-T1-GE3?

For technical support, including SIA810DJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA810DJ-T1-GE3 requirements.

6.How does Aetrix verify that SIA810DJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA810DJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA810DJ-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIA810DJ-T1-GE3?

All SIA810DJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA810DJ-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA810DJ-T1-GE3 part is unused and in its original packaging.

Return procedure for SIA810DJ-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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