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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA811ADJ-T1-GE3

Name: SIA811ADJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA811ADJ-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIA811ADJ-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6 Dual

Datasheet:: SIA811ADJ-T1-GE3.pdf

Description:: MOSFET P-CH 20V 4.5A PPAK SC70-6

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Product details

Overview

SIA811ADJ-T1-GE3 from Vishay Siliconix is a P-channel -20 V MOSFET with integrated Schottky diode in PowerPAK® SC-70-6L package, featuring 0.096 Ω R_DS(on) at V_GS = -4.5 V, 4.9 nC total gate charge, and dual-terminal Schottky VF = 0.41 V at 1 A - optimized for load switching in portable DC/DC converters.

For engineers reviewing the SIA811ADJ-T1-GE3 datasheet, SIA811ADJ-T1-GE3 pinout, SIA811ADJ-T1-GE3 application, or SIA811ADJ-T1-GE3 equivalent, key selection criteria include its thermally enhanced 0.75 mm profile, -4.5 A continuous drain rating at T_C = 25 °C, integrated body/Schottky co-location, and validated performance in asynchronous buck topologies with fast 15 ns turn-on delay.

Technical Context

This device integrates a P-channel enhancement-mode MOSFET and a monolithically co-packaged Schottky diode in a single PowerPAK® SC-70-6L dielectric-isolated structure. The MOSFET operates with V_GS(th) = -0.4 to -1.0 V and exhibits R_DS(on) = 0.096 Ω (typ) at -4.5 V drive, while the Schottky provides 2 A average forward current and 0.41 V forward drop at 1 A and 25 °C.

The dual-die configuration enables synchronous-free asynchronous DC/DC operation: the MOSFET controls high-side switching while the integrated Schottky serves as the freewheeling path, eliminating external diode placement and reducing parasitic inductance. Thermal resistance R_thJC = 15 °C/W (MOSFET) and R_thJA = 55 °C/W (typ) support compact board layouts in space-constrained portable applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - supports input rails up to 20 V in portable power systems without breakdown risk
R_DS(on) max @ V_GS = -4.5 V	0.116 Ω - enables <100 mW conduction loss at 3 A load, critical for battery runtime
I_D continuous @ T_C = 25 °C	-4.5 A - package-limited current handling suitable for 3–5 W portable power stages
Q_g typ	4.9 nC - low gate charge reduces driver power and switching losses in 1–3 MHz DC/DC
Schottky V_F @ 1 A	0.41 V (typ) - cuts freewheeling loss by ~40% vs. standard silicon diodes in same footprint
Package	PowerPAK® SC-70-6L - 2.05 × 2.05 mm, 0.75 mm height, thermally enhanced for PCB-mounted thermal relief
R_thJC (MOSFET)	15 °C/W (typ) - allows direct heatsinking to copper pour for sustained 3.5 A operation

Pinout & Package

PowerPAK® SC-70-6L is a surface-mount, leadless, thermally enhanced package with exposed drain pads on bottom side. Dimensions: 2.05 mm × 2.05 mm × 0.75 mm (L × W × H), 0.65 mm pitch, six terminals arranged in dual-row configuration.

Pin/Terminal	Circuit Role	Design Meaning
1 (A)	Anode of integrated Schottky diode	Connects to output node; forms freewheeling path during MOSFET off-time
2 (NC)	No connect	Internally unconnected; must be left floating or tied to ground per layout guidelines
3 (S)	Source of P-channel MOSFET	Common reference for gate drive and current return; ties to input rail in high-side switch
4 (G)	Gate of P-channel MOSFET	Accepts negative gate drive relative to source; threshold -0.4 to -1.0 V enables logic-level control
5 (K)	Cathode of integrated Schottky diode	Shared with MOSFET drain; connects to inductor node in buck topology
6 (K)	Second cathode terminal	Parallel cathode connection for lower inductance and improved current sharing in high-frequency operation

Key Features

Feature	Design Value
Integrated Schottky + MOSFET	Eliminates discrete diode placement, reduces BOM count and PCB area by >30% in portable buck converters
Thermally enhanced PowerPAK® SC-70	0.75 mm profile with exposed drain pad achieves 15 °C/W junction-to-case resistance for stable 3.5 A operation
Low Q_g (4.9 nC typ)	Enables efficient 2 MHz switching with minimal gate driver power consumption and reduced EMI
V_GS(th) = -0.4 to -1.0 V	Compatible with 1.8 V and 2.5 V logic outputs without level shifting in battery-powered systems
Schottky I_F = 2 A avg	Supports continuous 2 A freewheeling current without thermal derating on standard FR4

Applications

Cellular Charger Switch	Asynchronous DC/DC Converter
Use Scenario: High-efficiency USB-powered charging circuit for smartphones and wearables requiring reverse-current blocking and low quiescent loss. IC Role / Device Role / Timing Role: P-channel MOSFET acts as input-side load switch; integrated Schottky prevents backfeed and handles inductor flyback during PWM off-cycle. Use Value: 0.41 V Schottky VF and 0.096 Ω R_DS(on) reduce total conduction loss to <120 mW at 2 A, extending battery life by >8% vs. discrete solutions.	Use Scenario: Compact 1.2–5 V output buck regulator in Bluetooth earbuds and hearing aids where PCB space and thermal headroom are severely constrained. IC Role / Device Role / Timing Role: Dual-function device replaces separate high-side switch and freewheeling diode; operates in asynchronous mode with fixed-frequency PWM control. Use Value: Co-located Schottky minimizes loop inductance, enabling stable 2 MHz operation with <10 mV output ripple and no external snubber required.
Portable Load Switch	USB OTG Power Path
Use Scenario: Controlled power delivery to peripherals (e.g., SD card, sensors) in handheld medical devices requiring fast turn-on and reverse-voltage protection. IC Role / Device Role / Timing Role: MOSFET functions as active high-side switch; Schottky blocks reverse current when peripheral is powered externally. Use Value: -4.5 A rating and -20 V V_DS support hot-swap operation up to 19 V input; 15 ns t_d(on) ensures sub-10 μs response to enable signals.	Use Scenario: Bidirectional power management in USB On-The-Go accessories where device alternates between host and peripheral roles with shared VBUS line. IC Role / Device Role / Timing Role: MOSFET isolates VBUS from internal battery during peripheral mode; Schottky clamps transients and conducts reverse current during host mode. Use Value: Integrated dual-path design eliminates need for back-to-back MOSFETs or external TVS, reducing solution size by 40% and cost by $0.12/unit.

Cellular Charger Switch

Asynchronous DC/DC Converter

Use Scenario: High-efficiency USB-powered charging circuit for smartphones and wearables requiring reverse-current blocking and low quiescent loss.

IC Role / Device Role / Timing Role: P-channel MOSFET acts as input-side load switch; integrated Schottky prevents backfeed and handles inductor flyback during PWM off-cycle.

Use Value: 0.41 V Schottky VF and 0.096 Ω R_DS(on) reduce total conduction loss to <120 mW at 2 A, extending battery life by >8% vs. discrete solutions.

Use Scenario: Compact 1.2–5 V output buck regulator in Bluetooth earbuds and hearing aids where PCB space and thermal headroom are severely constrained.

IC Role / Device Role / Timing Role: Dual-function device replaces separate high-side switch and freewheeling diode; operates in asynchronous mode with fixed-frequency PWM control.

Use Value: Co-located Schottky minimizes loop inductance, enabling stable 2 MHz operation with <10 mV output ripple and no external snubber required.

Portable Load Switch

USB OTG Power Path

Use Scenario: Controlled power delivery to peripherals (e.g., SD card, sensors) in handheld medical devices requiring fast turn-on and reverse-voltage protection.

IC Role / Device Role / Timing Role: MOSFET functions as active high-side switch; Schottky blocks reverse current when peripheral is powered externally.

Use Value: -4.5 A rating and -20 V V_DS support hot-swap operation up to 19 V input; 15 ns t_d(on) ensures sub-10 μs response to enable signals.

Use Scenario: Bidirectional power management in USB On-The-Go accessories where device alternates between host and peripheral roles with shared VBUS line.

IC Role / Device Role / Timing Role: MOSFET isolates VBUS from internal battery during peripheral mode; Schottky clamps transients and conducts reverse current during host mode.

Use Value: Integrated dual-path design eliminates need for back-to-back MOSFETs or external TVS, reducing solution size by 40% and cost by $0.12/unit.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch with integrated Schottky applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA810DJ-T1-GE3	V_DS = -20 V, R_DS(on) = 0.135 Ω @ -4.5 V, no integrated Schottky - requires external diode	Higher board area and BOM count; unsuitable for space-critical asynchronous DC/DC	Select only if Schottky integration is unnecessary and gate charge <4 nC is prioritized
DMN2023LSD-13	N-channel -20 V MOSFET + discrete Schottky in SO-8; R_DS(on) = 0.045 Ω @ -4.5 V but larger 5 × 6 mm footprint	Better R_DS(on) but 6× larger area and higher layout complexity due to two components	Prefer for high-current (>5 A), non-portable designs where thermal mass outweighs size constraints

Compared with SiA810DJ-T1-GE3 and DMN2023LSD-13, the SIA811ADJ-T1-GE3 uniquely combines ultra-compact PowerPAK® SC-70-6L packaging, integrated Schottky functionality, and sub-0.1 Ω R_DS(on), making it the only viable option for <3 W, <20 mm² footprint portable power stages requiring zero external diode count.

Availability

SIA811ADJ-T1-GE3 is available at Aetrix Electronics and suitable for cellular charger switches, asynchronous DC/DC converters for portable devices, and USB OTG power-path management requiring stable component supply and full traceability.

Supply support for SIA811ADJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, miniaturization, and reliability across consumer, industrial, and automotive markets.

The SIA811ADJ-T1-GE3 belongs to Vishay's PowerPAK® SC-70 family designed specifically for space-constrained portable electronics, integrating MOSFET and Schottky functions to eliminate discrete diodes while maintaining thermal performance in sub-1 mm profiles.

FAQ

What is the maximum continuous drain current rating for SIA811ADJ-T1-GE3 at 70 °C case temperature?

The SIA811ADJ-T1-GE3 supports -4.5 A continuous drain current at T_C = 70 °C per Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB copper pour for thermal dissipation; derating applies above 70 °C case temperature per the current derating curve on page 6 of the datasheet.

Does SIA811ADJ-T1-GE3 require a gate resistor for stable 2 MHz switching?

The SIA811ADJ-T1-GE3 has a typical gate resistance of 6 Ω and total gate charge of 4.9 nC, allowing direct drive from most microcontroller GPIOs at 2 MHz without external gate resistor. However, a 1–5 Ω series resistor is recommended to dampen ringing and reduce EMI in high-noise environments per Application Note 826 layout guidelines.

How is the Schottky diode electrically isolated from the MOSFET in SIA811ADJ-T1-GE3?

The Schottky diode in SIA811ADJ-T1-GE3 shares the cathode (pins 5 and 6) with the MOSFET drain but has an independent anode (pin 1). There is no electrical isolation between the two dies; they are co-packaged in a single PowerPAK® SC-70-6L mold with shared thermal path. Pin 2 is NC and not internally connected to either die.

Can SIA811ADJ-T1-GE3 be used in a synchronous rectification configuration?

No - the SIA811ADJ-T1-GE3 is not suitable for synchronous rectification because it contains only a P-channel MOSFET and cannot replace the low-side N-channel switch. Its integrated Schottky is intended solely for asynchronous freewheeling; synchronous operation would require a second actively controlled MOSFET with complementary drive timing.

What is the thermal resistance from junction to ambient for the Schottky portion of SIA811ADJ-T1-GE3?

The Schottky portion of SIA811ADJ-T1-GE3 has a typical junction-to-ambient thermal resistance (R_thJA) of 62 °C/W under t ≤ 5 s pulse conditions on a 1" × 1" FR4 board, as specified in the Thermal Resistance Ratings table on page 2 of the datasheet. Steady-state R_thJA is not characterized separately for the Schottky alone due to shared thermal path with the MOSFET die.

SIA811ADJ-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: LITTLE FOOT®

Package/Case:: PowerPAK® SC-70-6 Dual

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 116mOhm @ 2.8A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 345 pF @ 10 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 1.8W (Ta), 6.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6 Dual

SIA811ADJ-T1-GE3 FAQ

1.How can I place an order for SIA811ADJ-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA811ADJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA811ADJ-T1-GE3 reliable?

The price and inventory of SIA811ADJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA811ADJ-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIA811ADJ-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA811ADJ-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA811ADJ-T1-GE3?

SIA811ADJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA811ADJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA811ADJ-T1-GE3?

For technical support, including SIA811ADJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA811ADJ-T1-GE3 requirements.

6.How does Aetrix verify that SIA811ADJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA811ADJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA811ADJ-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIA811ADJ-T1-GE3?

All SIA811ADJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA811ADJ-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA811ADJ-T1-GE3 part is unused and in its original packaging.

Return procedure for SIA811ADJ-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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