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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA814DJ-T1-GE3

Name: SIA814DJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA814DJ-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIA814DJ-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6 Dual

Datasheet:: SIA814DJ-T1-GE3.pdf

Description:: MOSFET N-CH 30V 4.5A PPAK SC70-6

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Product details

Overview

SIA814DJ-T1-GE3 from Vishay Siliconix is an N-channel 30-V trench MOSFET integrated with a monolithic Schottky diode in a thermally enhanced PowerPAK® SC-70-6 Dual package. It delivers R_DS(on) = 0.061 Ω at V_GS = 10 V, supports 4.5-A continuous drain current (T_J = 150 °C), and features low Q_g = 3.2 nC (at V_GS = 4.5 V), enabling high-efficiency DC/DC conversion in space-constrained portable power rails.

For engineers reviewing the SIA814DJ-T1-GE3 datasheet, SIA814DJ-T1-GE3 pinout, SIA814DJ-T1-GE3 application, or SIA814DJ-T1-GE3 equivalent, key selection criteria include its dual-function integration (MOSFET + Schottky), 0.75-mm profile, 30-V V_DS/V_{K A}, and thermal resistance R_thJA = 52 °C/W (MOSFET, t ≤ 5 s), critical for load switch and synchronous rectifier design in battery-powered systems.

Technical Context

This device integrates a trench-gate N-channel MOSFET and a Schottky diode on a single die within a leadless PowerPAK SC-70-6 Dual package. Its gate threshold voltage V_GS(th) ranges from 0.6 V to 1.5 V, enabling logic-level drive compatibility, while body diode V_SD = 0.8–1.2 V (I_S = 3.5 A) and t_rr = 12–20 ns support fast switching in buck converter freewheeling paths.

The MOSFET exhibits C_iss = 340 pF, C_oss = 45 pF, and Cr_ss = 25 pF at V_DS = 10 V, contributing to low switching losses. Its Schottky section provides V_F = 0.46–0.56 V at I_F = 1 A and I_R ≤ 0.1 mA at V_R = 30 V, ensuring low forward conduction loss and minimal reverse leakage in bidirectional power path applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines safe operating range in 3.3–24-V input DC/DC stages.
R_DS(on)	0.061 Ω @ V_GS = 10 V - Low conduction loss at full gate drive; enables <150 mW I²R loss at 4.5 A.
I_D (cont.)	4.5 A @ T_C = 25 °C - Package-limited current rating; suitable for compact load switches up to ~15 W.
Q_g	3.2 nC @ V_GS = 4.5 V - Low gate charge reduces driver power and enables >1 MHz switching in portable converters.
V_F (Schottky)	0.56 V @ I_F = 1 A - Low forward drop minimizes power dissipation in freewheeling or OR-ing paths.
R_thJA	52 °C/W (MOSFET, t ≤ 5 s) - Enables 1.9 W power dissipation on standard FR4 without heatsink at T_A = 25 °C.
t_rr	12–20 ns - Fast body diode recovery reduces switching loss and EMI in synchronous rectification.

Pinout & Package

Package: PowerPAK® SC-70-6 Dual - 2.05 mm × 2.05 mm footprint, 0.75 mm profile, leadless, thermally enhanced with exposed drain paddle.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal for MOSFET channel; requires 0.6–1.5 V threshold; low C_iss eases driving with microcontroller GPIO.
2 (D)	Drain (MOSFET) / Cathode (Schottky)	Common high-side node; connects to input rail; thermally coupled to exposed paddle for heat dissipation.
3 (S)	Source (MOSFET) / Anode (Schottky)	Power return path; ties to ground or output node; forms Schottky anode for reverse-blocking freewheeling.
4 (NC)	No Connect	Internally unconnected; must remain floating per datasheet; no routing or soldering required.
5 (D)	Drain (MOSFET) / Cathode (Schottky)	Second drain terminal - paralleled with Pin 2 for lower inductance and improved current sharing in high-frequency layouts.
6 (S)	Source (MOSFET) / Anode (Schottky)	Second source terminal - paralleled with Pin 3 to reduce source inductance and improve gate control stability.

Key Features

Feature	Design Value
Integrated Schottky Diode	Monolithic co-packaged Schottky (V_F = 0.56 V @ 1 A) eliminates external diode, reducing BOM count and PCB area in buck converters.
Thermally Enhanced PowerPAK SC-70-6 Dual	0.75-mm height and dual-drain/dual-source terminals lower thermal resistance (R_thJC = 12.5 °C/W) and parasitic inductance for stable high-frequency operation.
Low Gate Charge (Q_g)	3.2 nC at 4.5 V enables efficient driving from low-power controllers and reduces switching energy loss in portable 1–3 MHz DC/DC designs.
Logic-Level Gate Threshold	V_GS(th) = 0.6–1.5 V ensures reliable turn-on with 1.8-V, 3.3-V, or 5-V microcontroller outputs without level-shifting circuitry.
Halogen-Free & RoHS Compliant	Meets IPC-1752A material declaration requirements and environmental compliance mandates for consumer and medical portable electronics.

Applications

Portable DC/DC Converter	USB-C Load Switch
Use Scenario: Step-down conversion from single-cell Li-ion (3.0–4.2 V) to 1.2 V core voltage in wearables. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET with integrated Schottky for low-loss freewheeling path. Use Value: R_DS(on) = 0.061 Ω and t_rr = 12 ns minimize conduction and recovery losses, extending battery runtime by >8% vs. discrete MOSFET+diode solutions.	Use Scenario: Inrush current limiting and overvoltage protection in USB-C power delivery input stage. IC Role / Device Role / Timing Role: High-side load switch controlling 5–20 V input to downstream PMIC with fast fault response. Use Value: 4.5-A rating and 30-V V_DS support full USB PD 3.0 range; low Q_g allows rapid enable/disable cycling during port negotiation.
Smartphone Power Management	Wireless Earbud Charging Case
Use Scenario: Dual-rail power sequencing for AP and modem subsystems in LTE smartphones. IC Role / Device Role / Timing Role: Independent load switch for 1.8-V I/O and 1.0-V core rails with independent gate control. Use Value: Dual-source/dual-drain layout minimizes trace inductance, suppressing voltage spikes during 10-A transient load steps.	Use Scenario: Bidirectional power path management between case battery and earbud charging coils. IC Role / Device Role / Timing Role: Reverse-current blocking switch with integrated Schottky for low-loss charging path. Use Value: V_F = 0.46 V @ 0.5 A and I_R < 0.1 mA at 30 V ensure >94% charging efficiency and prevent battery self-discharge during storage.

Portable DC/DC Converter

USB-C Load Switch

Use Scenario: Step-down conversion from single-cell Li-ion (3.0–4.2 V) to 1.2 V core voltage in wearables.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET with integrated Schottky for low-loss freewheeling path.

Use Value: R_DS(on) = 0.061 Ω and t_rr = 12 ns minimize conduction and recovery losses, extending battery runtime by >8% vs. discrete MOSFET+diode solutions.

Use Scenario: Inrush current limiting and overvoltage protection in USB-C power delivery input stage.

IC Role / Device Role / Timing Role: High-side load switch controlling 5–20 V input to downstream PMIC with fast fault response.

Use Value: 4.5-A rating and 30-V V_DS support full USB PD 3.0 range; low Q_g allows rapid enable/disable cycling during port negotiation.

Smartphone Power Management

Wireless Earbud Charging Case

Use Scenario: Dual-rail power sequencing for AP and modem subsystems in LTE smartphones.

IC Role / Device Role / Timing Role: Independent load switch for 1.8-V I/O and 1.0-V core rails with independent gate control.

Use Value: Dual-source/dual-drain layout minimizes trace inductance, suppressing voltage spikes during 10-A transient load steps.

Use Scenario: Bidirectional power path management between case battery and earbud charging coils.

IC Role / Device Role / Timing Role: Reverse-current blocking switch with integrated Schottky for low-loss charging path.

Use Value: V_F = 0.46 V @ 0.5 A and I_R < 0.1 mA at 30 V ensure >94% charging efficiency and prevent battery self-discharge during storage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET + Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA913DJ-T1-GE3	Higher V_DS = 40 V; R_DS(on) = 0.085 Ω @ 4.5 V; same PowerPAK SC-70-6 Dual package.	Better suited for 24-V industrial DC/DC where 30-V margin is insufficient.	Select when input voltage exceeds 30 V or higher avalanche robustness is required.
DMN3026LSD-13	30-V N-ch MOSFET + Schottky in SO-8; R_DS(on) = 0.026 Ω @ 10 V; higher current (8.5 A) but larger footprint.	Preferred for higher-power (>20 W), lower-frequency (<500 kHz) applications where thermal mass matters more than size.	Choose when board space permits and >4.5-A continuous current or higher thermal mass is needed.

Compared with SiA913DJ-T1-GE3 and DMN3026LSD-13, the SIA814DJ-T1-GE3 offers the lowest profile (0.75 mm) and best balance of R_DS(on), Q_g, and integrated Schottky performance for sub-15-W portable applications where PCB area and height are constrained.

Availability

SIA814DJ-T1-GE3 is available at Aetrix Electronics and suitable for portable DC/DC converters, USB-C load switches, and smartphone power management systems requiring stable component supply, halogen-free compliance, and thermally efficient small-form-factor MOSFETs.

Supply support for SIA814DJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, miniaturization, and reliability for high-volume electronics.

The SIA814DJ product line targets ultra-compact, high-efficiency power management in battery-powered devices, combining trench MOSFET technology with monolithic Schottky integration to eliminate external diodes and reduce system footprint.

FAQ

What is the maximum continuous drain current rating for the SIA814DJ-T1-GE3 at 70 °C case temperature?

The SIA814DJ-T1-GE3 supports 4.5 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current (MOSFET)" - this rating is package-limited and applies regardless of ambient conditions when case temperature is maintained at 70 °C. Derating begins above this point per the current derating curve on page 6 of the datasheet.

Does the SIA814DJ-T1-GE3 integrate both MOSFET and Schottky functions on a single die?

Yes, the SIA814DJ-T1-GE3 integrates an N-channel trench MOSFET and a Schottky diode monolithically on one silicon die within the PowerPAK SC-70-6 Dual package. This co-integration is confirmed in the "N-Channel 30-V (D-S) MOSFET with Trench Schottky Diode" product description and verified by shared thermal characteristics and combined absolute maximum ratings for both elements.

What is the typical gate-to-source threshold voltage (V_GS(th)) range for the SIA814DJ-T1-GE3?

The SIA814DJ-T1-GE3 has a gate-to-source threshold voltage range of 0.6 V to 1.5 V at I_D = 250 µA, as specified in the Static Characteristics table. This logic-level threshold enables direct drive from 1.8-V and 3.3-V microcontrollers without gate drivers, and the ±3.7 mV/°C temperature coefficient ensures stable turn-on behavior across –55 to 150 °C junction temperatures.

Can the SIA814DJ-T1-GE3 be used in synchronous rectification applications?

Yes, the SIA814DJ-T1-GE3 is suitable for synchronous rectification due to its low R_DS(on) = 0.061 Ω, fast body diode recovery (t_rr = 12–20 ns), and integrated Schottky diode with V_F = 0.46–0.56 V. Its dual-source/dual-drain configuration further reduces layout inductance, improving commutation fidelity in buck-derived topologies up to 3 MHz.

Is the SIA814DJ-T1-GE3 compatible with lead-free reflow soldering processes?

Yes, the SIA814DJ-T1-GE3 is rated for peak reflow temperatures up to 260 °C and is explicitly marked "Lead (Pb)-free and Halogen-free" in its ordering information. The PowerPAK SC-70 package complies with JEDEC J-STD-020 moisture sensitivity level (MSL) 1, and Vishay's recommended solder profile (document 73257) confirms compatibility with standard lead-free reflow cycles.

SIA814DJ-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: LITTLE FOOT®

Package/Case:: PowerPAK® SC-70-6 Dual

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 61mOhm @ 3.3A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 340 pF @ 10 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 1.9W (Ta), 6.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6 Dual

SIA814DJ-T1-GE3 FAQ

1.How can I place an order for SIA814DJ-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA814DJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA814DJ-T1-GE3 reliable?

The price and inventory of SIA814DJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA814DJ-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIA814DJ-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA814DJ-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA814DJ-T1-GE3?

SIA814DJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA814DJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA814DJ-T1-GE3?

For technical support, including SIA814DJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA814DJ-T1-GE3 requirements.

6.How does Aetrix verify that SIA814DJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA814DJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA814DJ-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIA814DJ-T1-GE3?

All SIA814DJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA814DJ-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA814DJ-T1-GE3 part is unused and in its original packaging.

Return procedure for SIA814DJ-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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