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Vishay Siliconix SIA850DJ-T1-GE3
- Part No.:
- SIA850DJ-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SC-70-6 Dual
- Datasheet:
-
SIA850DJ-T1-GE3.pdf
- Description:
- MOSFET N-CH 190V 950MA PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,294
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Product details
Overview
SIA850DJ-T1-GE3 from Vishay Siliconix is an N-channel 190-V (D-S) MOSFET with integrated 190-V Schottky body diode in a thermally enhanced PowerPAK® SC-70-6 Dual package, delivering RDS(on) = 3.8 Ω at VGS = 4.5 V, Qg = 1.4 nC, and 0.95 A continuous drain current - optimized for compact DC/DC converters and load switches in portable electronics.
For engineers reviewing the SIA850DJ-T1-GE3 datasheet, SIA850DJ-T1-GE3 pinout, SIA850DJ-T1-GE3 application, or SIA850DJ-T1-GE3 equivalent, key selection criteria include its 190-V blocking capability, low-profile 0.75 mm height, halogen-free construction, and verified diode forward voltage of 1.2 V at 0.5 A - all critical for space-constrained, battery-powered systems requiring high-voltage switching efficiency.
Technical Context
This device integrates a high-voltage N-channel MOSFET and a co-packaged Schottky diode in a single PowerPAK SC-70-6 Dual leadless package, enabling synchronous rectification and reverse polarity protection without external diodes. Its gate threshold voltage (VGS(th)) ranges from 0.6 V to 1.4 V, supporting logic-level drive down to 1.8 V.
The MOSFET exhibits low dynamic losses with Ciss = 90 pF, Coss = 5 pF, and Crss = 3 pF at VDS = 100 V, while its body diode achieves trr = 45–70 ns and Qrr = 45–70 nC under IF = 0.5 A, dI/dt = 100 A/µs conditions - suitable for high-frequency flyback and buck converter topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 190 V - supports input rails up to 190 V DC without breakdown in high-side switch or boost applications |
| RDS(on) | 3.8 Ω @ VGS = 4.5 V - enables <1.7 W conduction loss at 0.95 A, critical for thermal management in sealed portable enclosures |
| Qg | 1.4 nC @ VGS = 4.5 V - reduces gate drive power and switching transition time in 1–3 MHz DC/DC controllers |
| ID (cont) | 0.95 A @ TC = 25 °C - defines maximum steady-state current before thermal derating begins on standard FR4 PCB |
| VF (diode) | 1.2 V @ IF = 0.5 A - lowers forward conduction loss vs. standard PN diodes, improving light-load efficiency in flyback snubbers |
| trr | 45–70 ns - minimizes reverse recovery energy loss during hard-switched transitions in non-synchronous topologies |
| RthJA | 65 °C/W (max) - sets worst-case junction temperature rise under natural convection, guiding heatsink/no-heatsink decisions |
Pinout & Package
Package: PowerPAK® SC-70-6 Dual - 2.05 mm × 2.05 mm footprint, 0.75 mm profile, leadless, halogen-free, RoHS-compliant surface-mount package with exposed drain paddle for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (K) | Cathode / Source | Body diode cathode terminal; electrically tied to MOSFET source; primary return path for diode conduction |
| 2 (A) | Anode / Drain | Body diode anode terminal; electrically tied to MOSFET drain; high-voltage node for both MOSFET and diode |
| 3 (N) | NC | No internal connection; isolated pad; must remain unconnected or grounded per layout guidelines |
| 4 (G) | Gate | Control input for MOSFET channel; requires ≤±16 V drive; low 2.3 Ω gate resistance aids fast switching |
| 5 (D) | Drain | Main MOSFET drain terminal; electrically common with pin 2 (A); connects to high-side rail or inductive load |
| 6 (S) | Source | Main MOSFET source terminal; electrically common with pin 1 (K); forms low-side reference for gate drive and current sensing |
Key Features
| Feature | Design Value |
|---|---|
| LITTLE FOOT® Plus Schottky Power MOSFET | Combines MOSFET switching control with integrated Schottky diode in one die+package - eliminates discrete diode placement and routing complexity |
| Thermally Enhanced PowerPAK SC-70 | 0.75 mm height and exposed drain paddle reduce RthJC to 12.5 °C/W - enables higher power density than standard SC-70 packages |
| Halogen-free per IEC 61249-2-21 | Meets global environmental compliance requirements without compromising thermal or electrical performance |
| Low Qg and Ciss | 1.4 nC total gate charge and 90 pF input capacitance allow efficient drive from low-power microcontrollers or PWM ICs |
| 190-V diode + MOSFET co-rating | Ensures symmetrical voltage handling across both devices - prevents premature diode avalanche during transient overvoltage events |
Applications
| DC/DC Converter for Portable Devices | Load Switch for Portable Devices |
|---|---|
Use Scenario: Step-down conversion in USB-C PD adapters and wireless charging transmitters operating from 12–48 V input. IC Role / Device Role / Timing Role: High-side synchronous rectifier and freewheeling diode replacement in buck topology, switching at 500 kHz–2 MHz. Use Value: 190-V rating accommodates input surges; 1.2 V diode VF cuts conduction loss by ~30% vs. standard PN diodes at 0.5 A. | Use Scenario: Controlled power-up sequencing for PMIC rails and sensor subsystems in medical wearables and IoT edge nodes. IC Role / Device Role / Timing Role: Low-leakage, high-voltage load switch isolating battery or adapter input from downstream circuitry during sleep mode. Use Value: 1 µA IDSS at 190 V ensures minimal standby drain; 0.75 mm profile fits ultra-thin form factors. |
| Reverse Polarity Protection | Flyback Snubber Diode |
Use Scenario: Input protection in industrial handheld scanners and ruggedized tablets exposed to accidental reverse battery connection. IC Role / Device Role / Timing Role: MOSFET operates in linear region as active shunt; body diode blocks reverse current flow during fault condition. Use Value: 190-V VKA withstands >150 V reverse transients; integrated diode eliminates need for separate TVS + MOSFET solution. | Use Scenario: Clamp diode in offline flyback converters for smart home hubs and AC/DC wall adapters rated up to 24 W. IC Role / Device Role / Timing Role: Fast-recovery body diode absorbs leakage inductance energy during MOSFET turn-off, reducing voltage spikes. Use Value: 45–70 ns trr limits ringback overshoot; 1.2 V VF lowers clamp power dissipation vs. 1N4007 alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage integrated MOSFET-diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiA913DJ-T1-GE3 | Same PowerPAK SC-70-6 Dual package; lower VDS = 80 V; RDS(on) = 2.8 Ω @ 4.5 V; Qg = 1.2 nC | Optimized for ≤80 V input systems (e.g., 48 V PoE); unsuitable for 190 V surge-prone inputs | Select only if system max VIN ≤ 80 V and lower RDS(on) is prioritized over voltage margin |
| SiA403DJ-T1-GE3 | Same package; VDS = 100 V; RDS(on) = 3.2 Ω @ 4.5 V; diode VF = 1.1 V @ 0.5 A; trr = 50–80 ns | Balances voltage rating and conduction loss for 100 V industrial supplies; lacks 190 V headroom for telecom or HV DC links | Prefer when 100 V rating suffices and tighter VF tolerance is required over absolute voltage robustness |
Compared with SIA850DJ-T1-GE3, SiA913DJ-T1-GE3 trades 110 V voltage headroom for lower RDS(on), while SiA403DJ-T1-GE3 offers intermediate rating and slightly better diode forward voltage - neither provides full 190 V capability, making SIA850DJ-T1-GE3 uniquely suited for high-input-voltage portable power stages.
Availability
SIA850DJ-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, portable load switches, reverse polarity protection circuits, and flyback snubber designs requiring stable component supply, consistent halogen-free compliance, and verified thermal performance in ultra-thin layouts.
Supply support for SIA850DJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency, miniaturization, and reliability.
The SIA850DJ-T1-GE3 belongs to Vishay's LITTLE FOOT® Plus PowerPAK SC-70 family - engineered specifically for high-voltage, space-constrained portable power management where integrated MOSFET-diode functionality and sub-1 mm profile are mandatory.
FAQ
What is the maximum continuous drain current rating for SIA850DJ-T1-GE3 at 70 °C case temperature?
The SIA850DJ-T1-GE3 supports 0.76 A continuous drain current at TC = 70 °C, as specified in its Absolute Maximum Ratings table. This derated value reflects thermal limitations of the PowerPAK SC-70-6 Dual package under sustained operation and must be used in thermal design calculations alongside RthJC = 12.5 °C/W to ensure junction temperature remains below 150 °C. The SIA850DJ-T1-GE3 datasheet confirms this rating applies to both MOSFET conduction and diode forward conduction modes.
Does SIA850DJ-T1-GE3 have a specified body diode reverse recovery time (trr)?
Yes, the SIA850DJ-T1-GE3 specifies a body diode reverse recovery time of 45–70 ns under test conditions of IF = 0.5 A, dI/dt = 100 A/µs, and TJ = 25 °C. This parameter is explicitly listed in both the "Drain-Source Body Diode Characteristics" and "DIODE SPECIFICATIONS" sections of the Vishay datasheet (Document Number: 68909). The SIA850DJ-T1-GE3 uses a Schottky structure, which contributes to its fast trr and low Qrr of 45–70 nC - critical for minimizing switching loss in high-frequency flyback and boost converters.
Can SIA850DJ-T1-GE3 be driven directly by a 1.8 V GPIO from an MCU?
Yes, the SIA850DJ-T1-GE3 is characterized for operation at VGS = 1.8 V, with RDS(on) = 17.0 Ω (max) at ID = 0.15 A. Its gate threshold voltage VGS(th) ranges from 0.6 V to 1.4 V, ensuring reliable turn-on with 1.8 V logic. However, due to the elevated on-resistance at this voltage, the SIA850DJ-T1-GE3 is best applied in low-current (<200 mA), low-duty-cycle scenarios such as enable/control switching - not high-efficiency power conversion. The SIA850DJ-T1-GE3 datasheet confirms these parameters in the "SPECIFICATIONS" table under static characteristics.
What is the thermal resistance from junction to ambient (RthJA) for SIA850DJ-T1-GE3 under typical mounting conditions?
The SIA850DJ-T1-GE3 has a maximum junction-to-ambient thermal resistance of 65 °C/W for t ≤ 5 s pulses when surface-mounted on a 1" x 1" FR4 board, as stated in the "THERMAL RESISTANCE RATINGS" table. Its typical RthJA is 52 °C/W under the same conditions. This value assumes no additional copper pour or thermal vias; adding 1-in² copper area can improve performance. The SIA850DJ-T1-GE3's low 0.75 mm profile and exposed drain paddle help achieve this rating, distinguishing it from standard SC-70 packages.
Is SIA850DJ-T1-GE3 pin-compatible with other PowerPAK SC-70-6 Dual devices like SiA913DJ-T1-GE3?
Yes, the SIA850DJ-T1-GE3 shares identical PowerPAK SC-70-6 Dual mechanical dimensions and pinout (K-A-NC-G-D-S) with SiA913DJ-T1-GE3 and SiA403DJ-T1-GE3, as confirmed by Vishay's package drawings and marking diagrams. All three use the same 2.05 mm × 2.05 mm footprint, 0.75 mm height, and pin assignment - enabling drop-in replacement in layouts designed for this dual-terminal MOSFET-diode package. The SIA850DJ-T1-GE3 datasheet and Vishay's package documentation verify this mechanical compatibility across the LITTLE FOOT® Plus family.
SIA850DJ-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- LITTLE FOOT®
- Package/Case:
- PowerPAK® SC-70-6 Dual
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 190 V
- Current - Continuous Drain (Id) @ 25°C:
- 950mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 3.8Ohm @ 360mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4.5 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 90 pF @ 100 V
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 1.9W (Ta), 7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SC-70-6 Dual
SIA850DJ-T1-GE3 FAQ
1.How can I place an order for SIA850DJ-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIA850DJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIA850DJ-T1-GE3 reliable?
The price and inventory of SIA850DJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA850DJ-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIA850DJ-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA850DJ-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIA850DJ-T1-GE3?
SIA850DJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIA850DJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIA850DJ-T1-GE3?
For technical support, including SIA850DJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA850DJ-T1-GE3 requirements.
6.How does Aetrix verify that SIA850DJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIA850DJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA850DJ-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIA850DJ-T1-GE3?
All SIA850DJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA850DJ-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIA850DJ-T1-GE3 part is unused and in its original packaging.
Return procedure for SIA850DJ-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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