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Vishay Siliconix SIAA00DJ-T1-GE3
- Part No.:
- SIAA00DJ-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SC-70-6
- Datasheet:
-
SIAA00DJ-T1-GE3.pdf
- Description:
- MOSFET N-CH 25V 20.1A/40A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,670
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Product details
Overview
SIAA00DJ-T1-GE3 from Vishay Siliconix is an N-channel 25 V (D-S) TrenchFET® Gen IV power MOSFET in a PowerPAK® SC-70-6L package, delivering RDS(on) = 5.6 mΩ at VGS = 10 V and 7.5 mΩ at VGS = 4.5 V, with 7.4 nC typical total gate charge, optimized for high-frequency synchronous rectification and DC/DC power management.
For engineers reviewing the SIAA00DJ-T1-GE3 datasheet, SIAA00DJ-T1-GE3 pinout, SIAA00DJ-T1-GE3 application, or SIAA00DJ-T1-GE3 equivalent, key selection criteria include its ultra-low RDS(on)/Qg figure-of-merit, 100% Rg and UIS tested reliability, and thermal resistance RthJC = 5.3 °C/W for high-density board-level thermal design.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology to achieve optimized Qg, Qgd, and Qgd/Qgs ratio-reducing switching losses in hard-switched topologies. Its gate threshold voltage (VGS(th)) ranges from 1.0 V to 2.5 V at ID = 250 μA, enabling robust 4.5 V logic-level drive compatibility.
The device integrates a low-VSD body diode (0.75–1.2 V at IS = 5 A), with trr = 23.2 ns and Qrr = 13 nC, supporting efficient synchronous buck operation. It is rated for continuous ID = 40 A at TC = 25 °C and operates across -55 °C to +150 °C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum drain-source blocking voltage for 3.3 V/5 V input rail applications |
| RDS(on) @ 10 V | 5.6 mΩ max - Enables <1 W conduction loss at 15 A in compact DC/DC stages |
| RDS(on) @ 4.5 V | 7.5 mΩ max - Ensures full enhancement with standard 5 V microcontroller GPIOs |
| Qg typ. | 7.4 nC - Low gate charge supports >1 MHz switching without excessive driver loss |
| ID continuous | 40 A @ TC = 25 °C - High current capability in thermally anchored layouts |
| RthJC | 5.3 °C/W typical - Enables direct heatsink coupling via exposed drain pad for thermal management |
| VGS(th) | 1.0–2.5 V - Guaranteed turn-on margin under worst-case VGS droop in high-speed gate drive |
Pinout & Package
Package: PowerPAK® SC-70-6L - 2.05 mm × 2.05 mm leadless surface-mount package with exposed drain pad on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (S) | Source | Low-side return path; electrically tied to internal source metallization and thermal slug |
| Pin 2 (D) | Drain | Main power output node; connected to large copper area on PCB for heat dissipation |
| Pin 3 (D) | Drain | Parallel drain terminal to reduce current density and improve thermal spreading |
| Pin 4 (D) | Drain | Third drain terminal enhancing current handling and reducing package inductance |
| Pin 5 (D) | Drain | Fourth drain terminal supporting high-current synchronous rectifier operation |
| Pin 6 (G) | Gate | Control input; isolated from drain/source; requires <2.5 Ω gate resistor for optimal switching |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers best-in-class RDS(on)/Qg FOM for high-efficiency, high-frequency DC/DC converters |
| 100 % Rg tested | Ensures gate resistance ≤2.5 Ω, critical for predictable rise/fall times and EMI control |
| 100 % UIS tested | Validates ruggedness against unclamped inductive switching events in motor and converter circuits |
| Optimized Qgd/Qgs ratio | Minimizes Miller-induced shoot-through risk during hard-switching transitions |
| Ultra-compact footprint | 2.05 mm × 2.05 mm area saves >60 % board space vs. SO-8 in point-of-load designs |
Applications
| Synchronous Buck Converter | High-Density DC/DC Module |
|---|---|
Use Scenario: Primary high-side switch in 12 V → 1.2 V VRM for CPU/GPU power delivery. IC Role / Device Role / Timing Role: High-frequency (500 kHz–1 MHz) power switch with fast turn-on/turn-off to minimize dead-time losses. Use Value: 7.4 nC Qg and 5.6 mΩ RDS(on) enable >95 % efficiency at 30 A load while maintaining thermal headroom on 1 oz copper. |
Use Scenario: Secondary-side synchronous rectifier in isolated 48 V → 12 V intermediate bus converter. IC Role / Device Role / Timing Role: Low-VDS freewheeling path replacing Schottky diode to reduce conduction loss and reverse recovery stress. Use Value: Body diode VSD = 0.75 V and trr = 23.2 ns cut rectifier loss by 40 % vs. 40 V Schottky, improving full-load efficiency by 1.2 %. |
| Battery Charging Circuit | Load Switch for Portable Electronics |
Use Scenario: Input protection and charging path control in USB-C PD 3.0 battery charger IC reference design. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protected high-side switch between adapter and charging IC. Use Value: 25 V VDS rating safely handles 20 V USB PD transient surges; 40 A ID supports 45 W fast charging without derating. |
Use Scenario: Always-on system rail switch enabling rapid power sequencing in IoT sensor hubs. IC Role / Device Role / Timing Role: Low-RDS(on) load switch controlling 3.3 V system supply with minimal voltage drop and inrush control. Use Value: 7.5 mΩ RDS(on) at 4.5 V ensures <33 mV drop at 4.4 A, preserving brown-out margin while supporting <100 ns turn-on for wake-up responsiveness. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiRA20DP-T1-GE3 | Same PowerPAK SC-70-6L package, but 30 V VDS, 6.2 mΩ @ 10 V, 8.5 mΩ @ 4.5 V, Qg = 8.2 nC | Higher VDS margin for 24 V industrial inputs; slightly higher gate charge increases driver loss at >2 MHz | Select when system must withstand 24 V transients or operate beyond 25 V nominal rails |
| DMN3025LSD-13 | SO-8 package, 30 V VDS, 2.5 mΩ @ 10 V, 3.8 mΩ @ 4.5 V, Qg = 21 nC, larger footprint | Lower RDS(on) but 2.8× larger board area and 2.8× higher Qg; unsuitable for >1 MHz or space-constrained designs | Select only when thermal budget allows SO-8 heatsinking and layout permits larger footprint |
Compared with SiRA20DP-T1-GE3, SIAA00DJ-T1-GE3 offers tighter VDS margin and lower Qg for 12–20 V systems; versus DMN3025LSD-13, it trades absolute RDS(on) for 60 % smaller size and 65 % lower gate drive energy-critical in portable and high-density power modules.
Availability
SIAA00DJ-T1-GE3 is available at Aetrix Electronics and suitable for synchronous buck converters, battery charging circuits, and high-density DC/DC modules requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.
Supply support for SIAA00DJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The SIAA00DJ-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-frequency, high-power-density DC/DC conversion in computing, communications, and portable power applications.
FAQ
What is the maximum continuous drain current rating for SIAA00DJ-T1-GE3 at 70 °C case temperature?
The SIAA00DJ-T1-GE3 supports 40 A continuous drain current at TC = 70 °C per the Absolute Maximum Ratings table. This rating assumes proper PCB copper area for thermal conduction and reflects the device's ability to sustain high current in thermally managed layouts such as those using internal ground/power planes or external heatsinks.
Does SIAA00DJ-T1-GE3 have integrated ESD protection on the gate?
The SIAA00DJ-T1-GE3 does not specify integrated gate ESD protection in its datasheet. Gate-source leakage (IGSS) is rated at ≤100 nA at ±12 V, and the device requires external gate protection-such as a 10 kΩ series resistor and 12 V Zener clamp-to prevent damage during handling or in noisy environments where VGS could exceed ±12 V.
Can SIAA00DJ-T1-GE3 be used as a replacement for Si2300DS in a 5 V logic-driven load switch?
SIAA00DJ-T1-GE3 is not a direct replacement for Si2300DS due to differences in package (PowerPAK SC-70-6L vs. SOT-23-3), pinout, and RDS(on) profile. While both are 20–30 V N-channel MOSFETs, SIAA00DJ-T1-GE3 has lower RDS(on) at 4.5 V (7.5 mΩ vs. ~25 mΩ) but requires re-layout for its 6-pin configuration and exposed drain pad-making it incompatible without PCB revision.
What is the thermal resistance from junction to ambient (RthJA) for SIAA00DJ-T1-GE3 on a standard FR4 board?
For SIAA00DJ-T1-GE3 mounted on a 1" × 1" FR4 board with 1 oz copper, RthJA is 28 °C/W typical and 36 °C/W maximum under t ≤ 10 s pulse conditions. This value assumes no additional heatsinking; adding thermal vias to inner ground planes reduces RthJA by up to 40 %, enabling higher sustained power in real-world PCB implementations.
Is SIAA00DJ-T1-GE3 suitable for automotive applications per AEC-Q101?
SIAA00DJ-T1-GE3 is not qualified to AEC-Q101. The datasheet specifies operation from -55 °C to +150 °C, but Vishay does not list this part in its AEC-Q101 qualified portfolio. For automotive use, engineers should select AEC-Q101-compliant alternatives such as the SiRA20DP-T1-GE3, which shares the same package and process but carries formal qualification documentation.
SIAA00DJ-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SC-70-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 20.1A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24 nC @ 10 V
- Vgs (Max):
- +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1090 pF @ 12.5 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.5W (Ta), 19.2W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SC-70-6
SIAA00DJ-T1-GE3 FAQ
1.How can I place an order for SIAA00DJ-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIAA00DJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIAA00DJ-T1-GE3 reliable?
The price and inventory of SIAA00DJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIAA00DJ-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIAA00DJ-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIAA00DJ-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIAA00DJ-T1-GE3?
SIAA00DJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIAA00DJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIAA00DJ-T1-GE3?
For technical support, including SIAA00DJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIAA00DJ-T1-GE3 requirements.
6.How does Aetrix verify that SIAA00DJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIAA00DJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIAA00DJ-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIAA00DJ-T1-GE3?
All SIAA00DJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIAA00DJ-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIAA00DJ-T1-GE3 part is unused and in its original packaging.
Return procedure for SIAA00DJ-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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