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Vishay Siliconix SIAA02DJ-T1-GE3
- Part No.:
- SIAA02DJ-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SC-70-6
- Datasheet:
-
SIAA02DJ-T1-GE3.pdf
- Description:
- MOSFET N-CH 20V 22A/52A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,180
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Product details
Overview
SIAA02DJ-T1-GE3 from Vishay Siliconix is an N-channel 20 V (D-S) TrenchFET® Gen IV power MOSFET in a PowerPAK® SC-70-6L package, delivering RDS(on) = 4.7 mΩ at VGS = 10 V, 5.9 mΩ at VGS = 4.5 V, and 16.2 mΩ at VGS = 2.5 V, with 10.2 nC total gate charge (Qg) and 52 A continuous drain current (TC = 25 °C), optimized for high-efficiency synchronous rectification in compact DC/DC converters.
For engineers reviewing the SIAA02DJ-T1-GE3 datasheet, SIAA02DJ-T1-GE3 pinout, SIAA02DJ-T1-GE3 application, or SIAA02DJ-T1-GE3 equivalent, this device supports low-voltage, high-current switching in space-constrained power stages where thermal performance, gate drive efficiency, and body diode recovery are critical selection criteria.
Technical Context
This MOSFET employs a trench-based silicon process enabling ultra-low on-resistance and excellent RDS(on) × Qg figure-of-merit. Its gate threshold voltage (VGS(th)) ranges from 0.6 V to 1.6 V, supporting logic-level drive down to 2.5 V while maintaining robust 12 V/–8 V gate rating.
The PowerPAK SC-70-6L package features exposed drain pads on pins 1–4 and 6 for enhanced thermal conduction, with RthJC = 5.3 °C/W (typical) and RthJA = 28 °C/W (t ≤ 5 s), enabling high-power density operation without external heatsinking in thermally managed PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum drain-source blocking voltage for 12 V rail and lower input systems. |
| RDS(on) @ VGS = 10 V | 4.7 mΩ max - Enables <100 mW conduction loss at 5 A, critical for high-efficiency synchronous rectifiers. |
| RDS(on) @ VGS = 4.5 V | 5.9 mΩ max - Ensures strong turn-on with standard 5 V logic or buck controller gate drivers. |
| Qg typ. | 10.2 nC - Low gate charge reduces driver power loss and enables fast switching up to 1 MHz. |
| ID continuous (TC = 25 °C) | 52 A - Supports high-current load switches and half-bridge legs in compact form factors. |
| VGS(th) | 0.6–1.6 V - Wide threshold range ensures reliable turn-on with low-voltage controllers and noise immunity. |
| Body diode VSD | 0.76 V typ. at IS = 5 A - Low forward drop minimizes reverse-recovery losses during dead-time conduction. |
Pinout & Package
Package: PowerPAK® SC-70-6L - 2.05 mm × 2.05 mm leadless surface-mount package with thermally enhanced bottom-side drain pads and 0.65 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6 | Drain (D) | Five parallel drain terminals connected internally; provide low-inductance, high-current path and primary thermal conduction path to PCB copper. |
| 5 | Source (S) | Single-source connection; referenced ground node for gate drive and current sensing in high-side or low-side configurations. |
| 3 (top marking side) | Gate (G) | Standard gate input; requires <10.2 nC charge for full enhancement; compatible with 2.5–12 V logic-level drivers. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers industry-leading RDS(on) × Qg FOM for minimal switching + conduction loss trade-off in 20 V class. |
| PowerPAK SC-70-6L package | Reduces board area by >50% vs. SO-8 while improving thermal resistance by 3× over comparable TSOP-6 devices. |
| Low VGS(th) variation | ±0.5 V tolerance ensures consistent turn-on timing across temperature and production lots in multi-phase designs. |
| Fast body diode recovery | trr = 20 ns typ. and Qrr = 7 nC typ. reduce shoot-through risk and EMI in hard-switched topologies. |
| Lead (Pb)-free and halogen-free | Complies with RoHS 2011/65/EU and JEDEC J-STD-020 reflow profile for leadless packages (peak 260 °C). |
Applications
| Synchronous Rectifier in Buck Converter | Load Switch for Portable USB-C PD |
|---|---|
|
Use Scenario: Replaces Schottky diode in secondary-side of 5–12 V input, 3.3–5 V output buck converter operating at 500 kHz–1 MHz. IC Role / Device Role: Low-side synchronous rectifier MOSFET, driven by controller's complementary output. Use Value: Reduces conduction loss by >60% vs. 40 V Schottky, enabling >95% efficiency at 10 A output with minimal thermal rise. |
Use Scenario: Controls power delivery to USB-C peripheral port with inrush limiting and overcurrent protection. IC Role / Device Role: High-current, low-RDS(on) load switch placed between battery/DC source and VBUS line. Use Value: 4.7 mΩ RDS(on) limits voltage drop to <50 mV at 10 A, preserving tight VBUS regulation under dynamic load. |
| Half-Bridge Power Stage in Motor Driver | Battery Protection Circuit |
|
Use Scenario: Upper or lower switch in 12 V brushed DC motor H-bridge driving 3–8 A peak loads. IC Role / Device Role: N-channel power switch in half-bridge configuration with bootstrap or isolated gate drive. Use Value: 52 A ID rating and 100 A pulsed capability support short-duration stall currents without thermal runaway. |
Use Scenario: Primary discharge path control in Li-ion battery pack protection IC circuitry. IC Role / Device Role: Discharge FET in protection module, switched by dedicated protection ASIC. Use Value: Ultra-low 5.9 mΩ RDS(on) at 4.5 V gate drive ensures minimal voltage drop during full-rate discharge (e.g., 3C rate). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 20 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiA913DJ-T1-GE3 | Same PowerPAK SC-70-6L package; higher RDS(on) = 8.5 mΩ @ 4.5 V; lower Qg = 6.3 nC. | Better suited for ultra-high-frequency (>2 MHz) switching where gate drive loss dominates conduction loss. | Select when prioritizing switching speed over conduction efficiency at moderate current levels (<6 A). |
| DMN2020LSD-13 | SO-8 package; RDS(on) = 5.2 mΩ @ 4.5 V; higher thermal resistance (RthJA ≈ 50 °C/W). | Requires larger PCB area and additional thermal vias; less suitable for ultra-dense portable designs. | Choose only if legacy SO-8 footprint compatibility or higher current derating margin (>70 °C ambient) is required. |
Compared with SiA913DJ-T1-GE3, SIAA02DJ-T1-GE3 delivers 30% lower conduction loss at 10 A but demands ~60% more gate drive energy; versus DMN2020LSD-13, it achieves identical RDS(on) in 40% less board area and 45% better junction-to-ambient thermal performance under transient conditions.
Availability
SIAA02DJ-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, battery management systems, and load switch applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and consumer electronics programs.
Supply support for SIAA02DJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIAA02DJ-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-density, high-efficiency power conversion in portable, automotive, and industrial systems where low RDS(on), fast switching, and thermal robustness are essential.
FAQ
What is the maximum continuous drain current for SIAA02DJ-T1-GE3 at 70 °C case temperature?
The SIAA02DJ-T1-GE3 supports 42 A continuous drain current at TC = 70 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SC-70-6L package under sustained high-power operation and must be validated against actual PCB layout and airflow conditions. The device's RthJC = 5.3 °C/W enables effective heat transfer to the board when mounted per Vishay's recommended pad layout.
Does SIAA02DJ-T1-GE3 support 3.3 V gate drive in practice?
Yes, SIAA02DJ-T1-GE3 is fully functional with 3.3 V gate drive: its VGS(th) minimum is 0.6 V, and RDS(on) is guaranteed at 16.2 mΩ max with VGS = 2.5 V. At 3.3 V, typical RDS(on) falls between 8–10 mΩ, making it suitable for direct drive from 3.3 V microcontrollers or PMICs without level shifting-provided gate charge requirements (10.2 nC) are met by the driver.
What is the safe operating area (SOA) limitation for SIAA02DJ-T1-GE3 in linear mode?
The SIAA02DJ-T1-GE3 SOA curve shows that linear-mode operation is limited by RDS(on) at low VDS and by thermal constraints at higher VDS. At DC, the device supports ≤10 A at VDS = 5 V and ≤3 A at VDS = 15 V when TC ≤ 25 °C. Pulse operation extends these limits, but sustained linear use requires active thermal management due to its 5.3 °C/W junction-to-case resistance.
How does the body diode performance of SIAA02DJ-T1-GE3 compare to standard Schottky diodes?
The SIAA02DJ-T1-GE3 body diode has VSD = 0.76 V typ. at 5 A and trr = 20 ns typ., outperforming many 20 V Schottky diodes in reverse recovery speed but with slightly higher forward voltage. Its Qrr = 7 nC is significantly lower than typical Schottky Qrr values (>20 nC), reducing switching loss and EMI in synchronous rectifier applications where body diode conduction occurs during dead time.
Is SIAA02DJ-T1-GE3 suitable for hot-swap applications?
SIAA02DJ-T1-GE3 can be used in hot-swap circuits when paired with appropriate gate control (e.g., dedicated hot-swap controller or RC delay network), leveraging its 20 V VDS, low RDS(on), and robust 100 A pulsed drain rating. However, its lack of integrated current-limiting or thermal shutdown requires external protection circuitry; it is not a standalone hot-swap IC but serves effectively as the pass element in discrete hot-swap designs.
SIAA02DJ-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SC-70-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Ta), 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.7mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 10 V
- Vgs (Max):
- +12V, -8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1250 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.5W (Ta), 19W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SC-70-6
SIAA02DJ-T1-GE3 FAQ
1.How can I place an order for SIAA02DJ-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIAA02DJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIAA02DJ-T1-GE3 reliable?
The price and inventory of SIAA02DJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIAA02DJ-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIAA02DJ-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIAA02DJ-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIAA02DJ-T1-GE3?
SIAA02DJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIAA02DJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIAA02DJ-T1-GE3?
For technical support, including SIAA02DJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIAA02DJ-T1-GE3 requirements.
6.How does Aetrix verify that SIAA02DJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIAA02DJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIAA02DJ-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIAA02DJ-T1-GE3?
All SIAA02DJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIAA02DJ-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIAA02DJ-T1-GE3 part is unused and in its original packaging.
Return procedure for SIAA02DJ-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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