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Vishay Siliconix SIB404DK-T1-GE3
- Part No.:
- SIB404DK-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SC-75-6
- Datasheet:
-
SIB404DK-T1-GE3.pdf
- Description:
- MOSFET N-CH 12V 9A PPAK SC75-6
- Quantity:
- Payment:
- Shipping:
Inventory:4,617
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Product details
Overview
SIB404DK-T1-GE3 from Vishay Siliconix is an N-channel 12 V (D-S) TrenchFET® Power MOSFET in a thermally enhanced PowerPAK® SC-75-6L package, delivering 9 A continuous drain current at TC = 25 °C, RDS(on) of 0.019 Ω at VGS = 4.5 V, and 9.6 nC total gate charge - optimized for low-voltage gate drive load switching in portable devices.
For engineers reviewing the SIB404DK-T1-GE3 datasheet, SIB404DK-T1-GE3 pinout, SIB404DK-T1-GE3 application, or SIB404DK-T1-GE3 equivalent, key selection criteria include its 12 V VDS rating, sub-20 mΩ on-resistance at 4.5 V gate drive, 0.75 mm profile, halogen-free and RoHS-compliant construction, and suitability for space-constrained battery-powered systems requiring fast switching and low conduction loss.
Technical Context
This MOSFET uses Vishay's TrenchFET® process to achieve low RDS(on) with gate threshold voltage (VGS(th)) ranging from 0.35 V to 0.8 V and guaranteed 100 % Rg testing. Its dynamic performance includes 5–10 ns turn-on delay and 20–40 ns rise time under standard test conditions (VDD = 6 V, Rg = 1 Ω).
The device features a source-drain body diode with VSD = 0.8–1.2 V at IS = 7 A and trr = 15–30 ns, supporting synchronous rectification and reverse recovery–sensitive topologies. Thermal design is enabled by RthJC = 7.5 °C/W (typ.) and RthJA = 41 °C/W (typ.) on FR4.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 12 V - maximum drain-source blocking voltage for low-voltage logic-level switching applications |
| RDS(on) | 0.019 Ω at VGS = 4.5 V - enables <19 mW conduction loss at 1 A, critical for battery runtime in portable systems |
| ID (continuous) | 9 A at TC = 25 °C - package-limited current handling suitable for compact DC-DC output stages and load switches |
| Qg | 9.6 nC - low gate charge supports high-frequency PWM operation with reduced driver power demand |
| VGS(th) | 0.35–0.8 V - ensures reliable turn-on with 1.2–1.8 V gate drive, compatible with modern ultra-low-voltage controllers |
| RthJC | 7.5 °C/W (typ.) - enables direct thermal coupling to PCB copper for passive heatsinking in thin-profile designs |
| Package | PowerPAK® SC-75-6L - 1.6 × 1.6 mm footprint, 0.75 mm height, leadless construction for high-density layout |
Pinout & Package
PowerPAK® SC-75-6L is a surface-mount, leadless, thermally enhanced package with exposed drain pads on the bottom side. The 6-pin configuration places all three drain terminals (pins 1, 2, 3) on one side, gate (pin 5) and source (pins 4, 6) on the opposite side - enabling low-inductance, high-current routing and efficient thermal transfer to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 - D | Drain (common) | Three parallel drain terminals reduce package inductance and improve thermal spreading to PCB ground plane |
| 4, 6 - S | Source (common) | Dual-source terminals minimize source inductance and support Kelvin sensing in precision current monitoring |
| 5 - G | Gate | Single gate terminal with Rg = 0.6–6.4 Ω (1 MHz), optimized for stable high-speed switching without external gate resistance |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers 0.019 Ω RDS(on) at 4.5 V gate drive - reduces I²R losses in 3.3 V and lower control rail applications |
| PowerPAK® SC-75-6L package | 1.6 × 1.6 mm footprint and 0.75 mm profile - fits within tight board area budgets in wearables and IoT sensors |
| 100 % Rg tested | Ensures consistent gate resistance (0.6–6.4 Ω) across production lots - improves timing predictability in high-frequency switching |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmental compliance for global consumer electronics |
| Low VGS(th) range | 0.35–0.8 V threshold - guarantees turn-on with 1.2 V microcontroller GPIOs, eliminating level-shifter requirements |
Applications
| Smartphone Power Management | USB-C Load Switch |
|---|---|
Use Scenario: Controlling power delivery to camera modules and display backlight drivers in space-constrained smartphone mainboards. IC Role / Device Role / Timing Role: Low-side load switch enabling rapid, controlled power sequencing and fault isolation. Use Value: 0.019 Ω RDS(on) minimizes voltage drop and heat generation during 3–5 A peak loads, extending battery life and reducing thermal throttling. | Use Scenario: Enabling/disabling VBUS path in USB-C receptacles with overcurrent protection and fast turn-off response. IC Role / Device Role / Timing Role: High-speed, low-RDS(on) N-channel switch driven directly by USB PD controller GPIOs. Use Value: 9.6 nC Qg and 5–10 ns td(on) allow sub-microsecond switching - critical for meeting USB-C specification fault response timing. |
| Wireless Earbud Charging Case | BLE Sensor Node Power Gate |
Use Scenario: Isolating charging circuitry from battery during standby to prevent leakage and self-discharge in compact earbud cases. IC Role / Device Role / Timing Role: Ultra-low-threshold load switch activated by system MCU to gate battery-to-charger path. Use Value: 0.35 V minimum VGS(th) ensures reliable turn-on using 1.2 V BLE SoC outputs - eliminates need for external level shifters. | Use Scenario: Power gating non-critical peripherals (e.g., environmental sensors) between BLE advertising intervals in coin-cell–powered nodes. IC Role / Device Role / Timing Role: Low-quiescent, low-RDS(on) power switch controlled by deep-sleep-capable microcontroller pins. Use Value: 1 µA IDSS at 12 V and 0.019 Ω RDS(on) enable <100 nA effective off-state leakage and <20 mW active loss at 10 mA sensor load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiB414DK-T1-GE3 | Higher RDS(on): 0.028 Ω @ 4.5 V; same package and VDS | Lower current capability (7 A vs. 9 A) - suited for <3 A load-switching where cost optimization is prioritized | Select when thermal margin allows higher on-resistance and BOM cost reduction is primary goal |
| DMN10H015LPS-13 | Different package (PowerDI 3333); RDS(on) = 0.015 Ω @ 4.5 V; VDS = 10 V | 10 V rating limits use in 12 V tolerant systems; larger 3.3 × 3.3 mm footprint increases board area | Choose only if 10 V VDS suffices and additional thermal mass from larger package improves reliability under sustained 7+ A loads |
Compared with SiB414DK-T1-GE3 and DMN10H015LPS-13, the SIB404DK-T1-GE3 provides the optimal balance of ultra-low RDS(on), 12 V rating, and minimal 1.6 × 1.6 mm footprint - making it uniquely suited for next-generation portable devices where board space, battery efficiency, and 1.2–1.8 V gate drive compatibility are simultaneously constrained.
Availability
SIB404DK-T1-GE3 is available at Aetrix Electronics and suitable for portable devices, USB-C load switching, and battery-powered sensor node power gating requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for SIB404DK-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and resistive components with emphasis on power efficiency, miniaturization, and reliability.
The SIB404DK-T1-GE3 belongs to Vishay's PowerPAK® SC-75 TrenchFET® family, engineered specifically for ultra-compact, high-efficiency load switching in battery-operated consumer electronics where low gate drive voltage, minimal footprint, and thermal performance are critical.
FAQ
What is the maximum continuous drain current rating for the SIB404DK-T1-GE3 at 70 °C case temperature?
The SIB404DK-T1-GE3 supports 9 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB thermal management per the recommended 1" × 1" FR4 layout. At higher ambient temperatures or with reduced copper area, derating applies per the current derating curve in the datasheet.
Does the SIB404DK-T1-GE3 require a gate resistor for stable switching in typical load-switch applications?
The SIB404DK-T1-GE3 has a measured gate resistance (Rg) of 0.6–6.4 Ω at 1 MHz, and its 9.6 nC total gate charge enables robust switching without an external gate resistor in most low-frequency (<1 MHz) load-switch applications. However, for EMI-sensitive designs or very high dV/dt environments, a small series resistor (e.g., 1–5 Ω) may be added to dampen ringing - verified in Application Note 826.
Can the SIB404DK-T1-GE3 be used with 1.2 V logic-level gate drive?
Yes - the SIB404DK-T1-GE3 has a guaranteed VGS(th) as low as 0.35 V and delivers RDS(on) = 0.065 Ω at VGS = 1.2 V and ID = 0.5 A, making it fully compatible with 1.2 V microcontroller GPIOs. This eliminates level shifters in ultra-low-power portable systems, as confirmed in the "On-Resistance vs. Gate-to-Source Voltage" characteristic curve.
What is the thermal resistance from junction to case (RthJC) for the SIB404DK-T1-GE3, and how does it impact PCB layout?
The SIB404DK-T1-GE3 has a typical RthJC of 7.5 °C/W, measured from junction to the exposed drain pad on the bottom of the PowerPAK® SC-75-6L package. This requires direct thermal connection of the drain pads (pins 1–3) to a large, multi-layer PCB copper pour - as detailed in Application Note 826 - to realize the full thermal benefit and sustain 9 A continuous operation.
Is the SIB404DK-T1-GE3 suitable for reverse polarity protection circuits?
No - the SIB404DK-T1-GE3 is an N-channel MOSFET configured for low-side switching and lacks integrated body-diode orientation or control logic for reverse polarity protection. Its body diode conducts from source to drain, so using it in high-side reverse protection would require external gate driving circuitry beyond the device's native capability. Dedicated reverse-protection ICs or P-channel solutions are recommended instead.
SIB404DK-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SC-75-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id:
- 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 4.5 V
- Vgs (Max):
- ±5V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 13W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SC-75-6
SIB404DK-T1-GE3 FAQ
1.How can I place an order for SIB404DK-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIB404DK-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIB404DK-T1-GE3 reliable?
The price and inventory of SIB404DK-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIB404DK-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIB404DK-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIB404DK-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIB404DK-T1-GE3?
SIB404DK-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIB404DK-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIB404DK-T1-GE3?
For technical support, including SIB404DK-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIB404DK-T1-GE3 requirements.
6.How does Aetrix verify that SIB404DK-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIB404DK-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIB404DK-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIB404DK-T1-GE3?
All SIB404DK-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIB404DK-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIB404DK-T1-GE3 part is unused and in its original packaging.
Return procedure for SIB404DK-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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