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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIB408DK-T1-GE3

Name: SIB408DK-T1-GE3
Brand: Vishay Siliconix
SKU: SIB408DK-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIB408DK-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-75-6

Datasheet:: SIB408DK-T1-GE3.pdf

Description:: MOSFET N-CH 30V 7A PPAK SC75-6

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Product details

Overview

SIB408DK-T1-GE3 from Vishay Siliconix is a N-channel 30-V (D-S) TrenchFET® Power MOSFET in a thermally enhanced PowerPAK® SC-75-6L package, delivering 7 A continuous drain current at T_C = 25 °C, R_DS(on) = 0.040 Ω at V_GS = 10 V, and Q_g = 2.9 nC (typ.), optimized for notebook load-switch applications.

For engineers reviewing the SIB408DK-T1-GE3 datasheet, SIB408DK-T1-GE3 pinout, SIB408DK-T1-GE3 application, or SIB408DK-T1-GE3 equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, 100 % UIS testing, halogen-free and RoHS-compliant construction, and thermal performance validated under JEDEC-standard board conditions.

Technical Context

This MOSFET employs trench gate technology to achieve low on-resistance and fast switching with minimal gate charge. Its 6-pin PowerPAK SC-75 package features exposed-drain thermal pads and dual-source terminals to reduce package inductance and improve power dissipation.

The device is characterized for operation across -55 °C to +150 °C junction temperature, with guaranteed V_GS(th) between 1.2 V and 2.5 V, 100 % R_g tested, and avalanche energy rating of 5 mJ - enabling robust performance in transient-prone load-switch circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines safe operating range in 3.3 V–12 V system rails.
R_DS(on) @ V_GS = 10 V	0.040 Ω (max) - Enables <150 mW conduction loss at 6 A, critical for thermally constrained notebook PCBs.
R_DS(on) @ V_GS = 4.5 V	0.050 Ω (max) - Ensures reliable turn-on from standard logic-level GPIOs or PMIC outputs.
Q_g	2.9 nC (typ.) - Low gate charge reduces drive power and enables efficient 1–2 MHz switching in compact DC-DC stages.
I_D (continuous)	7 A @ T_C = 25 °C - Package-limited current rating; derates to 4.8 A at T_A = 70 °C on FR4.
R_thJC	7.5 °C/W (typ.) - Junction-to-case thermal resistance supports direct heatsinking via exposed drain pad.
V_GS(th)	1.2–2.5 V - Threshold voltage window ensures predictable turn-on without overdrive risk in battery-powered systems.

Pinout & Package

PowerPAK® SC-75-6L-Single: 1.60 mm × 1.60 mm footprint, leadless, thermally enhanced package with exposed drain paddle and six surface-mount terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals minimize source inductance and improve current sharing in high-di/dt load-switch events.
4, 5	Drain (D)	Two drain terminals connected to internal copper paddle; primary thermal path and high-current return path.
6	Gate (G)	Single gate input with 0.5–2.5 Ω gate resistance (typ./max); designed for low-noise, stable switching with 1 Ω external series resistor.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 20 % lower R_DS(on) vs. planar MOSFETs at same die size, enabling smaller form factor without sacrificing efficiency.
100 % UIS tested	Guarantees ruggedness against unclamped inductive switching events common in hot-swap and load-switch transients.
Halogen-free & RoHS-compliant	Fully compliant with IEC 61249-2-21 and Directive 2002/95/EC; suitable for global consumer electronics manufacturing.
Thermally enhanced SC-75	Exposed drain paddle achieves R_thJC = 7.5 °C/W - 35 % lower than standard SC-75 packages - improving thermal headroom in thin-profile designs.
Low Q_gd/Q_gs ratio	Q_gd = 0.85 nC, Q_gs = 1.0 nC - minimizes Miller effect, enabling clean gate drive and reduced EMI in densely routed notebooks.

Applications

Notebook Load Switch	USB Power Delivery Switch
Use Scenario: High-side power control for discrete subsystems (e.g., SSD, WWAN module) during sleep/wake transitions. IC Role / Device Role / Timing Role: N-channel high-side switch controlled by PMIC GPIO; operates in static on/off mode with <10 µs transition time. Use Value: 0.040 Ω R_DS(on) limits voltage drop to <240 mV at 6 A, preserving rail integrity and reducing thermal stress on adjacent components.	Use Scenario: USB-C port power path management where V_BUS must be enabled/disabled based on CC logic detection. IC Role / Device Role / Timing Role: Logic-level driven load switch placed between upstream buck converter and USB-C connector. Use Value: 4.5 V gate threshold ensures full enhancement from 3.3 V control signals; 100 % UIS rating prevents failure during hot-plug inrush.
Portable SSD Power Gate	Embedded Controller Power Sequencing
Use Scenario: Isolating NVMe controller power domain from main SoC rail to meet USB PD 3.1 standby leakage requirements. IC Role / Device Role / Timing Role: Low-leakage (I_DSS ≤ 1 µA) high-side switch activated only during active data transfer. Use Value: Ultra-low I_DSS and V_GS(th) stability over temperature ensure <5 µA total domain leakage at 55 °C ambient.	Use Scenario: Controlled power-up sequence for FPGA configuration memory and auxiliary peripherals in industrial handhelds. IC Role / Device Role / Timing Role: Cascaded enable switch triggered by FPGA DONE signal to prevent supply contention. Use Value: Fast 5 ns turn-on delay (V_GEN = 10 V) and 6 ns fall time support tight sequencing windows (<100 ns) between power domains.

Notebook Load Switch

USB Power Delivery Switch

Use Scenario: High-side power control for discrete subsystems (e.g., SSD, WWAN module) during sleep/wake transitions.

IC Role / Device Role / Timing Role: N-channel high-side switch controlled by PMIC GPIO; operates in static on/off mode with <10 µs transition time.

Use Value: 0.040 Ω R_DS(on) limits voltage drop to <240 mV at 6 A, preserving rail integrity and reducing thermal stress on adjacent components.

Use Scenario: USB-C port power path management where V_BUS must be enabled/disabled based on CC logic detection.

IC Role / Device Role / Timing Role: Logic-level driven load switch placed between upstream buck converter and USB-C connector.

Use Value: 4.5 V gate threshold ensures full enhancement from 3.3 V control signals; 100 % UIS rating prevents failure during hot-plug inrush.

Portable SSD Power Gate

Embedded Controller Power Sequencing

Use Scenario: Isolating NVMe controller power domain from main SoC rail to meet USB PD 3.1 standby leakage requirements.

IC Role / Device Role / Timing Role: Low-leakage (I_DSS ≤ 1 µA) high-side switch activated only during active data transfer.

Use Value: Ultra-low I_DSS and V_GS(th) stability over temperature ensure <5 µA total domain leakage at 55 °C ambient.

Use Scenario: Controlled power-up sequence for FPGA configuration memory and auxiliary peripherals in industrial handhelds.

IC Role / Device Role / Timing Role: Cascaded enable switch triggered by FPGA DONE signal to prevent supply contention.

Use Value: Fast 5 ns turn-on delay (V_GEN = 10 V) and 6 ns fall time support tight sequencing windows (<100 ns) between power domains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load-switch MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiB412DK-T1-GE3	R_DS(on) = 0.028 Ω @ 10 V (lower), ID = 9.5 A (higher), same package and pinout.	Higher current capability suits 12 V input rails; marginally higher Q_g (3.5 nC) increases gate drive demand.	Select when >7 A continuous current or lower conduction loss is required without changing layout.
DMN3029LSD-13	SO-8 package (larger), R_DS(on) = 0.029 Ω @ 10 V, Q_g = 5.2 nC, no 100 % UIS test guarantee.	Requires PCB redesign; better thermal mass but higher parasitic inductance limits high-frequency switching.	Choose for legacy SO-8 compatibility or when board space allows larger footprint and higher peak current is needed.

Compared with SiB412DK-T1-GE3 and DMN3029LSD-13, the SIB408DK-T1-GE3 offers optimal balance of ultra-compact size, verified UIS robustness, and logic-level drive compatibility - making it preferred for space-constrained, battery-sensitive notebook and portable SSD designs where layout reuse and reliability under transient stress are critical.

Availability

SIB408DK-T1-GE3 is available at Aetrix Electronics and suitable for notebook load-switch, USB-C power delivery, portable SSD power gating, and embedded controller sequencing requiring stable component supply and long-term lifecycle assurance.

Supply support for SIB408DK-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, thermally optimized packaging.

The PowerPAK SC-75 product line targets ultra-thin portable electronics, delivering high-current density and low thermal resistance in sub-2 mm² footprints for next-generation mobile and edge computing platforms.

FAQ

What is the maximum continuous drain current rating for SIB408DK-T1-GE3 at 70 °C case temperature?

The SIB408DK-T1-GE3 supports 7 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB thermal design per JEDEC standards - specifically a 1" × 1" FR4 board with adequate copper pour under the exposed drain pad.

Does SIB408DK-T1-GE3 require a gate driver IC for typical notebook load-switch operation?

No, the SIB408DK-T1-GE3 does not require an external gate driver IC in standard notebook load-switch applications. Its 1.2–2.5 V gate threshold and 2.9 nC total gate charge allow direct drive from 3.3 V or 4.5 V PMIC GPIOs with a simple 1 Ω series resistor to damp ringing and control slew rate.

Is SIB408DK-T1-GE3 suitable for reverse polarity protection circuits?

No, the SIB408DK-T1-GE3 is not recommended for reverse polarity protection. As an N-channel MOSFET configured for high-side switching, it lacks integrated body-diode orientation or control logic for automatic reverse-blocking; dedicated reverse-protection controllers or P-channel alternatives are more appropriate for that function.

What is the body diode forward voltage of SIB408DK-T1-GE3 at 2.0 A and room temperature?

The body diode forward voltage (V_SD) of the SIB408DK-T1-GE3 is 0.8–1.2 V at I_S = 2.0 A and V_GS = 0 V, as measured per the Drain-Source Body Diode Characteristics section. This voltage impacts efficiency in synchronous rectification or bidirectional current paths where the intrinsic diode conducts.

How is thermal performance validated for SIB408DK-T1-GE3 in its PowerPAK SC-75 package?

Thermal performance of the SIB408DK-T1-GE3 is validated using JEDEC-standard test boards: R_thJA = 41–51 °C/W (t ≤ 5 s) and R_thJC = 7.5–9.5 °C/W (steady state), measured on a 1" × 1" FR4 board with 2 oz copper. The exposed drain paddle provides the primary thermal path, and solder fillet formation at the copper tip is not required for functional reliability.

SIB408DK-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-75-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.4W (Ta), 13W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-75-6

SIB408DK-T1-GE3 FAQ

1.How can I place an order for SIB408DK-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIB408DK-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIB408DK-T1-GE3 reliable?

The price and inventory of SIB408DK-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIB408DK-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIB408DK-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIB408DK-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIB408DK-T1-GE3?

SIB408DK-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIB408DK-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIB408DK-T1-GE3?

For technical support, including SIB408DK-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIB408DK-T1-GE3 requirements.

6.How does Aetrix verify that SIB408DK-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIB408DK-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIB408DK-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIB408DK-T1-GE3?

All SIB408DK-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIB408DK-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIB408DK-T1-GE3 part is unused and in its original packaging.

Return procedure for SIB408DK-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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