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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIB410DK-T1-GE3

Name: SIB410DK-T1-GE3
Brand: Vishay Siliconix
SKU: SIB410DK-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIB410DK-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-75-6

Datasheet:: SIB410DK-T1-GE3.pdf

Description:: MOSFET N-CH 30V 9A PPAK SC75-6

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Product details

Overview

SIB410DK-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Power MOSFET in PowerPAK SC-75-6L package, delivering R_DS(on) = 0.042 Ω at V_GS = 4.5 V, 9 A continuous drain current (T_C = 25 °C), and 5.7 nC total gate charge - optimized for high-efficiency DC/DC and boost converter power stages.

For engineers reviewing the SIB410DK-T1-GE3 datasheet, SIB410DK-T1-GE3 pinout, SIB410DK-T1-GE3 application, or SIB410DK-T1-GE3 equivalent, key selection criteria include low R_DS(on) at 2.5–4.5 V gate drive, compact leadless PowerPAK SC-75 footprint, thermal resistance R_thJC = 7.5 °C/W, and body diode recovery time t_rr = 15–30 ns for synchronous rectification and flyback topologies.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching performance. Its gate threshold voltage V_GS(th) ranges from 0.4 V to 1.0 V, enabling robust operation with logic-level and microcontroller-compatible drive signals.

The device features a fully characterized body diode with V_SD = 0.8–1.2 V at I_S = 3.5 A and Q_rr = 6–12 nC, supporting efficient discontinuous conduction mode (DCM) operation in boost converters and synchronous buck controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; suitable for 24 V input rail systems with margin.
R_DS(on) @ V_GS = 4.5 V	0.042 Ω - Enables <100 mW conduction loss at 5 A, critical for high-density power modules.
I_D (continuous, T_C = 25 °C)	9 A - Supports high-current point-of-load regulation without external heatsinking.
Q_g (V_GS = 4.5 V)	5.7 nC - Low gate charge reduces driver power and enables >1 MHz switching in compact converters.
R_thJC	7.5 °C/W (typ.) - Efficient junction-to-case thermal path supports sustained 8–10 W dissipation in PCB-mounted applications.
t_rr (body diode)	15–30 ns - Fast reverse recovery minimizes shoot-through risk and EMI in synchronous rectifier designs.
V_GS(th)	0.4–1.0 V - Ensures reliable turn-on with 1.8 V/2.5 V/3.3 V logic outputs, reducing need for level shifters.

Pinout & Package

Package: PowerPAK® SC-75-6L-Single - leadless, surface-mount package with exposed drain paddle (pins 1–3 and 4–6 are drain-connected); 1.60 mm × 1.60 mm footprint; 0.75 mm nominal height; RoHS-compliant, halogen-free construction.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Drain (D)	Internally connected to exposed copper paddle; primary heat path and high-current output node.
4	Gate (G)	Control terminal; low-input capacitance (C_iss = 560 pF) enables fast edge rates with minimal driver effort.
5, 6	Source (S)	Power return path; dual-source terminals reduce loop inductance and improve EMI performance.

Key Features

Feature	Design Value
TrenchFET® process technology	Delivers industry-leading R_DS(on) × area efficiency for ultra-compact 1.6 mm × 1.6 mm footprint.
100 % R_g tested	Ensures consistent gate resistance (0.6–6 Ω), critical for predictable switching timing and EMI control.
Low V_GS(th) distribution	0.4–1.0 V range guarantees turn-on compatibility with 1.8 V I/O domains without gate boosting.
Optimized body diode	Q_rr = 6–12 nC and t_a/t_b = 8/7 ns enable reliable synchronous rectification in DCM boost converters.
Lead (Pb)-free & halogen-free	Complies with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and IPC/JEDEC J-STD-033 handling requirements.

Applications

DC/DC Buck Converter	Boost Converter
Use Scenario: High-efficiency 5 V → 3.3 V point-of-load regulator in space-constrained networking equipment. IC Role / Device Role: Synchronous high-side switch in integrated buck controller IC power stage. Use Value: 0.042 Ω R_DS(on) at 4.5 V gate drive minimizes conduction loss while 5.7 nC Q_g supports 2 MHz operation.	Use Scenario: 12 V input → 24 V output boost stage in industrial sensor transmitters. IC Role / Device Role: Main switching FET in discrete boost controller design with external diode or synchronous rectifier. Use Value: Fast t_rr (15–30 ns) and low Q_rr (6–12 nC) reduce body diode losses and improve light-load efficiency.
USB-C Power Delivery	Portable LED Driver
Use Scenario: Input protection and load switching in USB-C PD sink applications with 20 V max bus voltage. IC Role / Device Role: Hot-swap and reverse-polarity protection switch upstream of PD controller. Use Value: 30 V V_DS rating provides 100 % margin over 20 V PD specification; low R_DS(on) limits voltage drop under 3 A load.	Use Scenario: PWM-controlled current sink for high-brightness LED strings in battery-powered lighting. IC Role / Device Role: Low-side switching element driven directly by MCU GPIO or dedicated LED driver IC. Use Value: Logic-level V_GS(th) (0.4–1.0 V) ensures full enhancement at 1.8 V/3.3 V MCU outputs; compact SC-75 saves board area.

DC/DC Buck Converter

Boost Converter

Use Scenario: High-efficiency 5 V → 3.3 V point-of-load regulator in space-constrained networking equipment.

IC Role / Device Role: Synchronous high-side switch in integrated buck controller IC power stage.

Use Value: 0.042 Ω R_DS(on) at 4.5 V gate drive minimizes conduction loss while 5.7 nC Q_g supports 2 MHz operation.

Use Scenario: 12 V input → 24 V output boost stage in industrial sensor transmitters.

IC Role / Device Role: Main switching FET in discrete boost controller design with external diode or synchronous rectifier.

Use Value: Fast t_rr (15–30 ns) and low Q_rr (6–12 nC) reduce body diode losses and improve light-load efficiency.

USB-C Power Delivery

Portable LED Driver

Use Scenario: Input protection and load switching in USB-C PD sink applications with 20 V max bus voltage.

IC Role / Device Role: Hot-swap and reverse-polarity protection switch upstream of PD controller.

Use Value: 30 V V_DS rating provides 100 % margin over 20 V PD specification; low R_DS(on) limits voltage drop under 3 A load.

Use Scenario: PWM-controlled current sink for high-brightness LED strings in battery-powered lighting.

IC Role / Device Role: Low-side switching element driven directly by MCU GPIO or dedicated LED driver IC.

Use Value: Logic-level V_GS(th) (0.4–1.0 V) ensures full enhancement at 1.8 V/3.3 V MCU outputs; compact SC-75 saves board area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiB412DK-T1-GE3	R_DS(on) = 0.028 Ω @ 4.5 V (lower), but same PowerPAK SC-75 package and pinout.	Better conduction efficiency at higher currents; identical layout compatibility.	Select when lower R_DS(on) justifies marginal cost increase and thermal headroom exists.
DMN3026LSD-13	30 V, R_DS(on) = 0.026 Ω @ 4.5 V, SO-8 package (larger footprint, higher R_thJA).	Higher power handling due to SO-8 thermal mass; not footprint-compatible.	Choose for prototyping or higher-power variants where board space allows SO-8 and thermal derating is acceptable.

Compared with SiB410DK-T1-GE3, SiB412DK-T1-GE3 offers lower on-resistance in identical packaging for improved efficiency, while DMN3026LSD-13 trades compactness for higher current capability and easier thermal management in legacy SO-8 layouts.

Availability

SIB410DK-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, boost converters, and USB-C power delivery systems requiring stable component supply, lead-free compliance, and high-volume manufacturability in compact form factors.

Supply support for SIB410DK-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and miniaturization.

The SIB410DK-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK SC-75 family, engineered for high-frequency, high-density power conversion in portable, industrial, and communications equipment.

FAQ

What is the maximum continuous drain current for SIB410DK-T1-GE3 at 70 °C case temperature?

The SIB410DK-T1-GE3 supports 9 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating based on R_thJC = 7.5 °C/W and T_J(max) = 150 °C, making it suitable for thermally constrained PCB layouts without forced airflow.

Does SIB410DK-T1-GE3 support 1.8 V gate drive in practical applications?

Yes, the SIB410DK-T1-GE3 has a guaranteed V_GS(th) range of 0.4–1.0 V and delivers R_DS(on) = 0.052 Ω at V_GS = 1.8 V and I_D = 2 A. This enables direct drive from 1.8 V microcontrollers without level-shifting circuitry, verified across production lots per datasheet Document Number 67020.

What is the thermal resistance from junction to ambient (R_thJA) for SIB410DK-T1-GE3 on a standard FR4 board?

The SIB410DK-T1-GE3 exhibits R_thJA = 41–51 °C/W (typ./max.) when mounted on a 1" × 1" FR4 board per datasheet note b. This value assumes standard soldering profile and no additional copper pour; adding thermal vias under the drain paddle can reduce R_thJA by up to 30 % in production designs.

Is SIB410DK-T1-GE3 pin-compatible with other PowerPAK SC-75-6L devices?

Yes, the SIB410DK-T1-GE3 uses the standard PowerPAK SC-75-6L-Single pinout (Drain–Drain–Drain–Gate–Source–Source), matching all Vishay SC-75-6L single-die N-channel MOSFETs including SiB412DK-T1-GE3 and SiB406DK-T1-GE3 - enabling drop-in replacement within the same product family.

What is the body diode forward voltage (V_SD) of SIB410DK-T1-GE3 under typical operating conditions?

The SIB410DK-T1-GE3 body diode exhibits V_SD = 0.8–1.2 V at I_S = 3.5 A and V_GS = 0 V, as measured per datasheet specifications. This low forward voltage supports efficient freewheeling in non-synchronous topologies and reduces power loss during dead-time conduction.

SIB410DK-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-75-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 42mOhm @ 3.8A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 560 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 13W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-75-6

SIB410DK-T1-GE3 FAQ

1.How can I place an order for SIB410DK-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIB410DK-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIB410DK-T1-GE3 reliable?

The price and inventory of SIB410DK-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIB410DK-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIB410DK-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIB410DK-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIB410DK-T1-GE3?

SIB410DK-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIB410DK-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIB410DK-T1-GE3?

For technical support, including SIB410DK-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIB410DK-T1-GE3 requirements.

6.How does Aetrix verify that SIB410DK-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIB410DK-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIB410DK-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIB410DK-T1-GE3?

All SIB410DK-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIB410DK-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIB410DK-T1-GE3 part is unused and in its original packaging.

Return procedure for SIB410DK-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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