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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIB417AEDK-T1-GE3

Name: SIB417AEDK-T1-GE3
Brand: Vishay Siliconix
SKU: SIB417AEDK-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIB417AEDK-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-75-6

Datasheet:: SIB417AEDK-T1-GE3.pdf

Description:: MOSFET P-CH 8V 9A PPAK SC75-6

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Product details

Overview

SIB417AEDK-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® Power MOSFET in PowerPAK® SC-75 package, rated for -8 V V_DS, 0.032 Ω R_DS(on) at V_GS = -4.5 V, and -9 A continuous drain current at T_C = 25 °C. It serves as a low-voltage load switch in space-constrained portable power rails.

For engineers reviewing the SIB417AEDK-T1-GE3 datasheet, SIB417AEDK-T1-GE3 pinout, SIB417AEDK-T1-GE3 application, or SIB417AEDK-T1-GE3 equivalent, key selection criteria include its 1.2 V gate threshold, thermally enhanced leadless SC-75 footprint, body diode recovery performance (t_rr = 32–48 ns), and guaranteed 100% R_g testing for gate drive consistency.

Technical Context

This device uses trench-gate silicon technology to achieve low on-resistance with sub-2 V logic-level gate drive compatibility. Its negative V_GS(th) (-0.35 to -1.0 V) enables direct interfacing with 1.8 V and 2.5 V microcontroller GPIOs without level shifting.

The PowerPAK SC-75-6L-Single package integrates three drain terminals (pins 1, 2, 3) and two source terminals (pins 4, 5) for optimized current sharing and thermal path efficiency, with a maximum R_thJC of 9.5 °C/W to support high-current switching in compact layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-8 V - Maximum reverse-blocking capability for low-voltage battery-side switching
R_DS(on) @ V_GS = -4.5 V	0.032 Ω - Enables ≤32 mV drop at 1 A, minimizing conduction loss in 3.3 V/2.5 V rails
I_D Continuous @ T_C = 25 °C	-9 A - Supports high peak load currents in handheld device power management
Q_g Total Gate Charge	11.3 nC @ V_GS = -4.5 V - Low gate drive energy reduces MCU GPIO stress and switching loss
t_rr Body Diode Recovery	32–48 ns - Fast reverse recovery minimizes shoot-through risk in synchronous buck or OR-ing configurations
V_GS(th)	-0.35 to -1.0 V - Ensures reliable turn-on with 1.8 V logic, eliminating need for external gate bias
R_thJC	7.5 °C/W typical - Enables >10 W dissipation with minimal case-to-heatsink thermal interface resistance

Pinout & Package

PowerPAK® SC-75-6L-Single: 1.60 mm × 1.60 mm × 0.75 mm leadless surface-mount package with exposed drain paddle for thermal enhancement. Three drain pins (1, 2, 3), one gate pin (6), and two source pins (4, 5).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3 (D)	Drain	Parallel-connected drain terminals reduce effective R_DS(on) and improve thermal spreading into PCB copper
4, 5 (S)	Source	Dual-source configuration lowers source inductance and improves high-frequency switching stability
6 (G)	Gate	Single gate input with 100% R_g tested - ensures consistent turn-on timing across production lots

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.032 Ω R_DS(on) at -4.5 V while maintaining robust avalanche rating (E_AS = 22 mJ per datasheet)
Thermally enhanced PowerPAK SC-75	Reduces R_thJA to 41 °C/W (typical), enabling 2.4 W power dissipation on standard FR4 without heatsink
100% R_g tested	Guarantees gate resistance ≤6.5 Ω, critical for predictable rise/fall times in high-speed load switching
ESD protection	2500 V HBM - eliminates need for external ESD clamps in consumer-grade portable designs
Low V_GS(th) distribution	-0.35 to -1.0 V range ensures reliable turn-on even at end-of-battery voltage (e.g., 2.8 V Li-ion)

Applications

Smartphone Main Power Switch	Tablet PC USB OTG Power Control
Use Scenario: Switching main system rail (3.3 V or 2.8 V) during sleep/wake transitions in smartphones. IC Role / Device Role / Timing Role: High-side load switch controlling power delivery to application processor subsystems. Use Value: 0.032 Ω R_DS(on) limits dropout to <32 mV at 1 A, preserving voltage margin for core logic under dynamic load.	Use Scenario: Enabling/disabling 5 V USB OTG power path when peripheral is attached/detached in tablets. IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch with fast turn-off to prevent backfeed. Use Value: 32–48 ns body diode t_rr prevents latch-up during hot-plug events and supports >1 MHz switching in active OR-ing.
Wearable Sensor Hub Power Gating	Bluetooth Earbud Battery Protection
Use Scenario: Isolating always-on sensor hub supply from main SoC rail to minimize standby current in wearables. IC Role / Device Role / Timing Role: Low-leakage P-channel switch activated by MCU GPIO with 1.8 V logic compatibility. Use Value: V_GS(th) down to -0.35 V ensures full enhancement at 1.8 V drive, reducing control circuit complexity and BOM count.	Use Scenario: Blocking reverse current from charged earbud battery into charging circuit during disconnection. IC Role / Device Role / Timing Role: Back-to-back configured load switch providing bidirectional blocking with single-device footprint. Use Value: Dual-source/dual-drain layout supports parallel connection for <0.02 Ω effective R_DS(on), cutting conduction loss by 40% vs. discrete solution.

Smartphone Main Power Switch

Tablet PC USB OTG Power Control

Use Scenario: Switching main system rail (3.3 V or 2.8 V) during sleep/wake transitions in smartphones.

IC Role / Device Role / Timing Role: High-side load switch controlling power delivery to application processor subsystems.

Use Value: 0.032 Ω R_DS(on) limits dropout to <32 mV at 1 A, preserving voltage margin for core logic under dynamic load.

Use Scenario: Enabling/disabling 5 V USB OTG power path when peripheral is attached/detached in tablets.

IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch with fast turn-off to prevent backfeed.

Use Value: 32–48 ns body diode t_rr prevents latch-up during hot-plug events and supports >1 MHz switching in active OR-ing.

Wearable Sensor Hub Power Gating

Bluetooth Earbud Battery Protection

Use Scenario: Isolating always-on sensor hub supply from main SoC rail to minimize standby current in wearables.

IC Role / Device Role / Timing Role: Low-leakage P-channel switch activated by MCU GPIO with 1.8 V logic compatibility.

Use Value: V_GS(th) down to -0.35 V ensures full enhancement at 1.8 V drive, reducing control circuit complexity and BOM count.

Use Scenario: Blocking reverse current from charged earbud battery into charging circuit during disconnection.

IC Role / Device Role / Timing Role: Back-to-back configured load switch providing bidirectional blocking with single-device footprint.

Use Value: Dual-source/dual-drain layout supports parallel connection for <0.02 Ω effective R_DS(on), cutting conduction loss by 40% vs. discrete solution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiB416AEDK-T1-GE3	V_DS = -6 V, R_DS(on) = 0.022 Ω @ -4.5 V, lower voltage rating	Restricted to ≤6 V systems; unsuitable for 8 V backup rails or industrial 5 V tolerant interfaces	Select only if system V_IN never exceeds 6 V and lowest possible R_DS(on) is prioritized over voltage margin
DMN2020LFG-7	P-channel, -20 V V_DS, 0.047 Ω @ -4.5 V, SOT-23-6 package	Larger 2.9 mm × 2.8 mm footprint; higher R_thJA (110 °C/W) limits power handling on dense PCBs	Choose when higher voltage margin is required and board area permits larger package; not drop-in compatible

Compared with SiB416AEDK-T1-GE3, SIB417AEDK-T1-GE3 provides +2 V V_DS headroom critical for transient immunity; versus DMN2020LFG-7, it delivers 45% lower thermal resistance and 30% smaller footprint-enabling tighter integration in ultra-thin mobile form factors.

Availability

SIB417AEDK-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power sequencing, tablet USB OTG control, and wearable sensor hub gating requiring stable component supply, Pb-free/halogen-free compliance, and long-term production continuity.

Supply support for SIB417AEDK-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIB417AEDK-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® SC-75 family, engineered specifically for space-constrained, battery-powered applications demanding low R_DS(on), logic-level gate drive, and robust thermal performance.

FAQ

What is the maximum continuous drain current rating for SIB417AEDK-T1-GE3 at 70 °C case temperature?

The SIB417AEDK-T1-GE3 supports -9 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal via design per Vishay Application Note 826 for the PowerPAK SC-75 package. Derating applies above 70 °C case temperature.

Does SIB417AEDK-T1-GE3 require a gate pull-up resistor in high-side load switch configurations?

Yes - SIB417AEDK-T1-GE3 is a P-channel MOSFET and requires an external gate pull-up resistor to V_IN to maintain off-state when the control signal is inactive. Typical values range from 10 kΩ to 100 kΩ depending on required turn-off speed and leakage budget. No internal pull-up is integrated.

Can SIB417AEDK-T1-GE3 be used in synchronous rectification applications?

No - SIB417AEDK-T1-GE3 is not characterized or qualified for synchronous rectification. Its body diode t_rr (32–48 ns) and Q_rr (13–20 nC) are optimized for load switching, not high-frequency freewheeling. For synchronous buck topologies, Vishay recommends dedicated synchronous rectifier MOSFETs like the SiR626DP.

What is the gate threshold voltage range for SIB417AEDK-T1-GE3, and how does it affect 1.8 V GPIO compatibility?

The SIB417AEDK-T1-GE3 has a V_GS(th) range of -0.35 V to -1.0 V, meaning it fully enhances with gate drive as low as 1.8 V (i.e., V_GS = -1.8 V). This guarantees reliable turn-on across process/voltage/temperature corners in 1.8 V I/O systems without gate boosting.

Is SIB417AEDK-T1-GE3 suitable for reverse polarity protection in 5 V USB-powered devices?

Yes - SIB417AEDK-T1-GE3 supports reverse polarity protection in 5 V USB applications when placed in the high-side position. Its -8 V V_DS rating provides 3 V margin above 5 V nominal, and its low R_DS(on) (0.032 Ω) limits voltage drop to <160 mV at 5 A, meeting USB power delivery specifications.

SIB417AEDK-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-75-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 8 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.2V, 4.5V

Rds On (Max) @ Id, Vgs:: 32mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18.5 nC @ 5 V

Vgs (Max):: ±5V

Input Capacitance (Ciss) (Max) @ Vds:: 878 pF @ 4 V

FET Feature:: -

Power Dissipation (Max):: 2.4W (Ta), 13W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-75-6

SIB417AEDK-T1-GE3 FAQ

1.How can I place an order for SIB417AEDK-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIB417AEDK-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIB417AEDK-T1-GE3 reliable?

The price and inventory of SIB417AEDK-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIB417AEDK-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIB417AEDK-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIB417AEDK-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIB417AEDK-T1-GE3?

SIB417AEDK-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIB417AEDK-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIB417AEDK-T1-GE3?

For technical support, including SIB417AEDK-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIB417AEDK-T1-GE3 requirements.

6.How does Aetrix verify that SIB417AEDK-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIB417AEDK-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIB417AEDK-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIB417AEDK-T1-GE3?

All SIB417AEDK-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIB417AEDK-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIB417AEDK-T1-GE3 part is unused and in its original packaging.

Return procedure for SIB417AEDK-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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