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Vishay Siliconix SIB417EDK-T1-GE3
- Part No.:
- SIB417EDK-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SC-75-6
- Datasheet:
-
SIB417EDK-T1-GE3.pdf
- Description:
- MOSFET P-CH 8V 9A PPAK SC75-6
- Quantity:
- Payment:
- Shipping:
Inventory:9,295
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Product details
Overview
SIB417EDK-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET® MOSFET in PowerPAK SC-75-6L package, rated for -8 V VDS, 0.058 Ω RDS(on) at VGS = -4.5 V, and -9.0 A continuous drain current (package-limited), designed for low-voltage load switching in portable electronics.
For engineers reviewing the SIB417EDK-T1-GE3 datasheet, SIB417EDK-T1-GE3 pinout, SIB417EDK-T1-GE3 application, or SIB417EDK-T1-GE3 equivalent, key selection criteria include its -1.2 V minimum gate threshold, 7.3 nC total gate charge, thermally enhanced leadless SC-75 footprint, and halogen-free/RoHS-compliant construction for space-constrained battery-powered systems.
Technical Context
This device employs trench-gate silicon technology to achieve low on-resistance with fast switching dynamics: typical Ciss = 565 pF, Coss = 215 pF, and tr = 31–46.5 ns at VDD = -4 V with 1 Ω gate drive. Its body diode exhibits VSD = -0.8 to -1.2 V at IS = -4.6 A and trr = 32–48 ns under 100 A/µs dI/dt.
The SIB417EDK-T1-GE3 operates across -55 °C to +150 °C junction temperature, with RthJA = 41–51 °C/W (t ≤ 5 s) and RthJC = 7.5–9.5 °C/W (steady state), enabling high-density PCB layouts where thermal management relies on copper area and case conduction rather than airflow.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -8 V - Maximum reverse-blocking capability for single-supply 3.3 V or lower logic-level systems |
| RDS(on) @ VGS = -4.5 V | 0.058 Ω - Enables <100 mW conduction loss at 4.6 A load current in portable power rails |
| ID Continuous (TC = 25 °C) | -9.0 A - Package-limited rating; usable up to -4.6 A at ambient 70 °C without heatsink |
| Qg Total Gate Charge | 7.3 nC @ VGS = -4.5 V - Low drive energy requirement compatible with weak GPIO or low-power PMIC outputs |
| VGS(th) | -0.35 to -1.0 V - Ensures reliable turn-on with 1.8 V logic or battery voltages down to ~2.5 V |
| RthJC | 7.5 °C/W - Supports direct thermal coupling to PCB copper pour for efficient heat extraction via drain pad |
| Body Diode VSD | -0.8 to -1.2 V @ IS = -4.6 A - Low forward drop improves efficiency in synchronous rectification or reverse-polarity protection |
Pinout & Package
PowerPAK SC-75-6L-Single: 1.60 mm × 1.60 mm × 0.80 mm leadless surface-mount package with exposed drain paddle on bottom side; six terminals arranged in single-row configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Drain | Main current-carrying terminal; electrically and thermally connected to large exposed copper paddle |
| 2 | Drain | Second drain connection; parallel path to reduce resistance and improve thermal spreading |
| 3 | Drain | Third drain connection; enhances current sharing and thermal dissipation in high-current paths |
| 4 | Gate | Control input; requires no external pull-down due to negative VGS(th); sensitive to ESD (900 V HBM) |
| 5 | Source | Reference node for gate drive; tied to system ground or load return in high-side switch configurations |
| 6 | Source | Second source connection; reduces source inductance and improves switching stability |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Technology | Delivers 0.058 Ω RDS(on) at -4.5 V in ultra-small SC-75 footprint, reducing board area vs. SO-8 equivalents by >75 % |
| Thermally Enhanced PowerPAK SC-75 | Exposed drain paddle enables 7.5 °C/W junction-to-case thermal resistance-critical for sustained 4–5 A loads in handheld devices |
| 100 % Rg Tested | Guarantees gate resistance between 1.9–19 Ω, ensuring consistent switching speed and EMI profile across production lots |
| Halogen-Free & RoHS-Compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC-required for consumer electronics sold in EU, Japan, and China markets |
| Low VGS(th) Range | -0.35 to -1.0 V threshold supports robust turn-on from 1.8 V microcontroller I/O or aging Li-ion batteries (≥2.8 V) |
Applications
| Smartphone Power Management | Wireless Earbud Battery Protection |
|---|---|
|
Use Scenario: High-side load switch controlling power to camera module or display backlight during sleep mode. IC Role / Device Role: P-channel MOSFET configured as active-low controlled high-side switch. Use Value: 0.058 Ω RDS(on) limits voltage drop to <270 mV at 4.6 A, preserving battery runtime and enabling precise current monitoring. |
Use Scenario: Reverse-polarity and overcurrent protection for rechargeable Li-ion cell in true wireless stereo (TWS) earbuds. IC Role / Device Role: Low-side sensing switch with integrated body diode used in bidirectional protection circuit. Use Value: Body diode VSD = -0.8 to -1.2 V ensures minimal forward loss during charging; 900 V ESD rating withstands handling in compact assembly lines. |
| USB-C Port Power Delivery | Wearable Health Sensor Hub |
|
Use Scenario: Input power path management for USB-C receptacle, isolating host from accessory during fault conditions. IC Role / Device Role: P-channel MOSFET in OR-ing configuration with companion controller IC. Use Value: 7.3 nC Qg allows fast turn-off (<50 ns fall time) to meet USB PD 3.0 fault response timing requirements. |
Use Scenario: On/off control of optical heart-rate sensor and accelerometer subsystem to extend multi-day battery life. IC Role / Device Role: Low-quiescent-load power switch enabling sub-1 µA off-state leakage (IDSS ≤ -1 µA). Use Value: -55 to +150 °C operating range supports clinical-grade wearable operation inside sealed enclosures near skin contact zones. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiB416EDK-T1-GE3 | VDS = -6 V, RDS(on) = 0.045 Ω @ -4.5 V, Qg = 6.5 nC - lower voltage rating but slightly better conduction and switching | Optimized for 2.5 V–3.3 V rail systems only; unsuitable for 5 V tolerant designs requiring -8 V blocking | Select when maximum efficiency at ≤3.3 V supply is critical and VDS margin can be reduced. |
| DMN2020LFG-7 | VDS = -20 V, RDS(on) = 0.085 Ω @ -4.5 V, Qg = 9.5 nC - higher voltage rating but larger SC-70 package and higher gate charge | Supports wider input range including 12 V industrial rails; less suitable for ultra-thin portable PCBs due to 2.0 mm × 2.1 mm footprint | Choose for mixed-voltage systems needing -20 V headroom or legacy SC-70 layout compatibility. |
Compared with SiB416EDK-T1-GE3 and DMN2020LFG-7, the SIB417EDK-T1-GE3 uniquely balances -8 V blocking, 0.058 Ω on-resistance, and 1.6 mm × 1.6 mm size-making it optimal for next-gen compact 3.3 V mobile power rails where voltage margin, thermal density, and board area are co-constrained.
Availability
SIB417EDK-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power management, wireless earbud battery protection, USB-C port power delivery, and wearable health sensor hub applications requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for SIB417EDK-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-efficiency power management and signal integrity.
The SIB417EDK-T1-GE3 belongs to Vishay's PowerPAK SC-75 TrenchFET® family, engineered specifically for space-constrained, battery-operated consumer electronics demanding low RDS(on), fast switching, and robust thermal performance in sub-2 mm² footprints.
FAQ
What is the maximum continuous drain current for SIB417EDK-T1-GE3 at 70 °C ambient temperature?
The SIB417EDK-T1-GE3 supports -4.6 A continuous drain current at TA = 70 °C when mounted on a standard 1" × 1" FR4 board, as specified in the Absolute Maximum Ratings table. This value is derated from the -9.0 A package-limited rating at TC = 25 °C and reflects thermal limitations of the PCB layout-not device intrinsic capability.
Does SIB417EDK-T1-GE3 require a gate resistor for stable switching in portable applications?
The SIB417EDK-T1-GE3 does not mandate an external gate resistor for basic on/off operation, but a 5–10 Ω series resistor is recommended to dampen ringing caused by its 565 pF Ciss and low gate resistance (1.9–19 Ω). This improves EMI performance and prevents false triggering in noise-sensitive wearable systems using the SIB417EDK-T1-GE3.
Can SIB417EDK-T1-GE3 be used in a high-side switch configuration with 1.8 V GPIO control?
Yes - the SIB417EDK-T1-GE3's VGS(th) range of -0.35 to -1.0 V ensures reliable turn-on with 1.8 V logic. When used as a high-side switch, tie the source to VIN, gate to GPIO (active-low), and load to drain; the SIB417EDK-T1-GE3 will fully enhance at VGS = -1.8 V, delivering <130 mΩ effective RDS(on).
What is the thermal resistance from junction to ambient for SIB417EDK-T1-GE3 under pulsed conditions?
Under pulsed conditions (t ≤ 5 s), the SIB417EDK-T1-GE3 has a typical RthJA of 41 °C/W and maximum of 51 °C/W when mounted on a 1" × 1" FR4 board. This value assumes no additional heatsinking and defines safe short-duration power dissipation limits - for example, 13 W peak power yields ΔTJ-A ≈ 533 °C, so practical pulse duty cycle must remain <2 % to avoid exceeding 150 °C TJ.
Is SIB417EDK-T1-GE3 suitable for reverse polarity protection in 3.3 V USB peripherals?
Yes - the SIB417EDK-T1-GE3 is well-suited for reverse polarity protection in 3.3 V USB peripherals. With its -8 V VDS rating and low 0.058 Ω RDS(on), it introduces <190 mV drop at 3.3 V/2 A loads while blocking reverse voltage. Its body diode is not used in this topology, eliminating reverse recovery concerns - a key advantage of the SIB417EDK-T1-GE3 over N-channel alternatives requiring level-shifting.
SIB417EDK-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SC-75-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 8 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 58mOhm @ 5.8A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 5 V
- Vgs (Max):
- ±5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 565 pF @ 4 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.4W (Ta), 13W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SC-75-6
SIB417EDK-T1-GE3 FAQ
1.How can I place an order for SIB417EDK-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIB417EDK-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIB417EDK-T1-GE3 reliable?
The price and inventory of SIB417EDK-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIB417EDK-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIB417EDK-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIB417EDK-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIB417EDK-T1-GE3?
SIB417EDK-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIB417EDK-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIB417EDK-T1-GE3?
For technical support, including SIB417EDK-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIB417EDK-T1-GE3 requirements.
6.How does Aetrix verify that SIB417EDK-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIB417EDK-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIB417EDK-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIB417EDK-T1-GE3?
All SIB417EDK-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIB417EDK-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIB417EDK-T1-GE3 part is unused and in its original packaging.
Return procedure for SIB417EDK-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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