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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIB422EDK-T4-GE3

Name: SIB422EDK-T4-GE3
Brand: Vishay Siliconix
SKU: SIB422EDK-T4-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIB422EDK-T4-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-75-6

Datasheet:: SIB422EDK-T4-GE3.pdf

Description:: MOSFET N-CH 20V 7.1A/9A PPAK

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Product details

Overview

SIB422EDK-T4-GE3 from Vishay Siliconix is an N-channel 20 V (D-S) TrenchFET® power MOSFET in PowerPAK® SC-75-6L package, delivering R_DS(on) = 0.030 Ω at V_GS = 4.5 V, 9 A continuous drain current (T_C = 25 °C), and 0.75 mm profile-optimized for portable load switching and battery management circuits.

For engineers reviewing the SIB422EDK-T4-GE3 datasheet, SIB422EDK-T4-GE3 pinout, SIB422EDK-T4-GE3 application, or SIB422EDK-T4-GE3 equivalent, key selection criteria include low-voltage gate drive compatibility (1.5–4.5 V), thermally enhanced leadless packaging, ESD robustness (4000 V HBM), and validated R_g testing for consistent switching performance.

Technical Context

This device employs trench-gate MOSFET architecture to achieve low on-resistance with minimal gate charge (Q_g = 6 nC typ. at V_GS = 4.5 V). Its threshold voltage range (0.4–1.0 V) enables reliable turn-on from 1.5 V logic, while body diode recovery (t_rr = 15–30 ns) supports synchronous rectification in compact DC-DC converters.

The PowerPAK SC-75-6L package uses exposed-drain thermal pads and copper leadframe construction to deliver R_thJC = 7.5 °C/W (typ.), enabling high-current operation without external heatsinking in space-constrained PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage for 3.3 V/5 V system rail protection
R_DS(on) @ 4.5 V	0.030 Ω - Enables <150 mW conduction loss at 7.1 A, critical for battery runtime extension
I_D (continuous)	9 A @ T_C = 25 °C - Supports high-side load switch duty in USB-C PD and PMIC output stages
Q_g	6 nC typ. @ V_GS = 4.5 V - Reduces gate driver power demand and switching transition time
V_GS(th)	0.4–1.0 V - Ensures full enhancement with 1.8 V I/O microcontrollers and low-power logic
ESD Rating	4000 V HBM - Provides robust handling during automated assembly and end-user device integration
R_thJC	7.5 °C/W typ. - Allows direct thermal coupling to PCB copper for passive cooling in handheld devices

Pinout & Package

PowerPAK® SC-75-6L is a 1.6 mm × 1.6 mm, 0.75 mm thin, leadless surface-mount package with six terminals: three drain pads (Pins 1, 2, 4), one source pad (Pin 3), one gate pad (Pin 5), and one additional drain pad (Pin 6). Thermal performance relies on bottom-side copper exposure per Vishay Doc. 73257.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4, 6	Drain (D)	Four parallel drain connections maximize current handling and reduce package inductance
3	Source (S)	Single-source terminal tied to internal MOSFET substrate; primary return path for load current
5	Gate (G)	Control input requiring <6 nC charge; layout must minimize trace inductance for fast switching

Key Features

Feature	Design Value
TrenchFET® process	Delivers 30% lower R_DS(on) vs. planar MOSFETs at same die size, reducing conduction loss in portable power rails
Thermally enhanced PowerPAK SC-75	0.75 mm height and exposed drain pads enable PCB-level thermal spreading without height penalty
100% R_g tested	Guarantees gate resistance between 460–4600 Ω, ensuring predictable turn-on timing across production lots
Body diode t_rr = 15–30 ns	Enables use as synchronous rectifier in buck converters up to 2 MHz without reverse recovery losses
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per Doc. 99912

Applications

Smartphone Battery Protection	USB-C Power Delivery Switch
Use Scenario: Isolating main battery from charging circuitry during fault conditions or deep sleep mode. IC Role / Device Role / Timing Role: High-side load switch controlled by PMIC GPIO; operates in static on/off state with occasional transitions. Use Value: 0.030 Ω R_DS(on) limits voltage drop to <210 mV at 7 A, preserving battery capacity and enabling accurate fuel gauging.	Use Scenario: Enabling/disabling 5–20 V power paths between USB-C port and system rails based on CC logic negotiation. IC Role / Device Role / Timing Role: Bidirectional power switch supporting both sink and source roles; requires low gate threshold and fast turn-off. Use Value: 1.0 V max V_GS(th) ensures reliable turn-on from 1.8 V CC controller outputs; 0.75 mm profile fits tight connector keep-out zones.
Wireless Earbud Charging Case	Low-Power IoT Sensor Node
Use Scenario: Controlling charging current flow from case battery to earbud battery via magnetic pogo pins. IC Role / Device Role / Timing Role: Low-duty-cycle load switch activated only during insertion detection; must survive repeated hot-plug events. Use Value: 4000 V HBM ESD rating prevents latch-up during mechanical mating; 9 A rating accommodates peak 5 W charging bursts.	Use Scenario: Power gating peripheral sensors (accelerometer, BLE radio) to extend multi-year battery life in sealed environmental monitors. IC Role / Device Role / Timing Role: Ultra-low-leakage power switch; remains off for weeks between wake cycles with sub-μA control current. Use Value: IDSS ≤ 1 μA at 20 V ensures <10 nA leakage per switch, minimizing standby current in multi-rail BOMs.

Smartphone Battery Protection

USB-C Power Delivery Switch

Use Scenario: Isolating main battery from charging circuitry during fault conditions or deep sleep mode.

IC Role / Device Role / Timing Role: High-side load switch controlled by PMIC GPIO; operates in static on/off state with occasional transitions.

Use Value: 0.030 Ω R_DS(on) limits voltage drop to <210 mV at 7 A, preserving battery capacity and enabling accurate fuel gauging.

Use Scenario: Enabling/disabling 5–20 V power paths between USB-C port and system rails based on CC logic negotiation.

IC Role / Device Role / Timing Role: Bidirectional power switch supporting both sink and source roles; requires low gate threshold and fast turn-off.

Use Value: 1.0 V max V_GS(th) ensures reliable turn-on from 1.8 V CC controller outputs; 0.75 mm profile fits tight connector keep-out zones.

Wireless Earbud Charging Case

Low-Power IoT Sensor Node

Use Scenario: Controlling charging current flow from case battery to earbud battery via magnetic pogo pins.

IC Role / Device Role / Timing Role: Low-duty-cycle load switch activated only during insertion detection; must survive repeated hot-plug events.

Use Value: 4000 V HBM ESD rating prevents latch-up during mechanical mating; 9 A rating accommodates peak 5 W charging bursts.

Use Scenario: Power gating peripheral sensors (accelerometer, BLE radio) to extend multi-year battery life in sealed environmental monitors.

IC Role / Device Role / Timing Role: Ultra-low-leakage power switch; remains off for weeks between wake cycles with sub-μA control current.

Use Value: IDSS ≤ 1 μA at 20 V ensures <10 nA leakage per switch, minimizing standby current in multi-rail BOMs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiB412EDK-T4-GE3	R_DS(on) = 0.041 Ω @ 2.5 V; same package and pinout	Higher gate threshold (0.6–1.2 V); less suitable for 1.5 V logic drive	Select when higher V_GS(th) improves noise immunity in noisy industrial environments
DMN2020LFG-7	20 V, R_DS(on) = 0.028 Ω @ 4.5 V; PowerDI™ 123 package (2.1 × 2.5 mm)	Larger footprint and 1.0 mm height; no bottom-side thermal pad	Choose when board space allows larger package and thermal path is routed through top-side traces

Compared with SiB412EDK-T4-GE3, SIB422EDK-T4-GE3 offers lower gate threshold and better 1.5 V drive margin; versus DMN2020LFG-7, it provides superior thermal performance in ultra-thin form factor but requires precise solder paste volume control due to leadless construction.

Availability

SIB422EDK-T4-GE3 is available at Aetrix Electronics and suitable for portable devices, battery management systems, and USB-C power delivery modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIB422EDK-T4-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with global manufacturing and reliability validation per MIL-STD and AEC-Q200 standards.

The PowerPAK SC-75 family targets space-constrained portable electronics, emphasizing low-profile thermal management, low-voltage gate drive, and high-reliability assembly for consumer and medical wearables.

FAQ

What is the maximum continuous drain current rating for SIB422EDK-T4-GE3 at 70 °C case temperature?

The SIB422EDK-T4-GE3 supports 9 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area for heat spreading and accounts for junction temperature limits of 150 °C. Derating curves in Figure 5 confirm no reduction below 9 A until T_C exceeds 70 °C.

Does SIB422EDK-T4-GE3 require special rework procedures due to its leadless PowerPAK SC-75 package?

Yes-manual soldering with a soldering iron is not recommended for SIB422EDK-T4-GE3 per Vishay Doc. 73257. Rework must use infrared or hot-air reflow profiles matching the original JEDEC J-STD-020 specification, with peak temperature ≤260 °C. The exposed copper drain pads require controlled solder paste volume to ensure interconnection without bridging.

Can SIB422EDK-T4-GE3 be used as a synchronous rectifier in a 1 MHz buck converter?

Yes-SIB422EDK-T4-GE3 supports synchronous rectification up to 2 MHz, as confirmed by its body diode reverse recovery time (t_rr = 15–30 ns) and low Q_gd/Q_gs ratio. At 1 MHz, its 6 nC total gate charge and 0.030 Ω R_DS(on) minimize switching and conduction losses, provided gate drive voltage exceeds 4.5 V for optimal efficiency.

What is the gate-source leakage current specification for SIB422EDK-T4-GE3 at ±8 V?

The gate-source leakage current for SIB422EDK-T4-GE3 is ±25 μA maximum at V_GS = ±8 V and T_A = 25 °C, per the Static Electrical Characteristics table. This value ensures minimal control current draw in high-impedance gate drive circuits and supports stable biasing in always-on load switch configurations.

Is SIB422EDK-T4-GE3 compliant with automotive AEC-Q101 qualification requirements?

No-SIB422EDK-T4-GE3 is not AEC-Q101 qualified. It is rated for industrial temperature range (−55 to +150 °C) and intended for consumer, computing, and portable industrial applications. For automotive-grade alternatives, consult Vishay's AEC-Q101-qualified PowerPAK SO-8 or TrenchFET Gen IV families.

SIB422EDK-T4-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-75-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 7.1A (Ta), 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 13W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-75-6

SIB422EDK-T4-GE3 FAQ

1.How can I place an order for SIB422EDK-T4-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIB422EDK-T4-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIB422EDK-T4-GE3 reliable?

The price and inventory of SIB422EDK-T4-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIB422EDK-T4-GE3 is usually 5 days.

3.What payment methods are accepted for SIB422EDK-T4-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIB422EDK-T4-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIB422EDK-T4-GE3?

SIB422EDK-T4-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIB422EDK-T4-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIB422EDK-T4-GE3?

For technical support, including SIB422EDK-T4-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIB422EDK-T4-GE3 requirements.

6.How does Aetrix verify that SIB422EDK-T4-GE3 is sourced from the original manufacturer or authorized distributors?

All SIB422EDK-T4-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIB422EDK-T4-GE3 meets industry standards.

7.What is the process for return or replacement of SIB422EDK-T4-GE3?

All SIB422EDK-T4-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIB422EDK-T4-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIB422EDK-T4-GE3 part is unused and in its original packaging.

Return procedure for SIB422EDK-T4-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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