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Vishay Siliconix SIB4316EDK-T1-GE3
- Part No.:
- SIB4316EDK-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SC-75-6
- Datasheet:
-
SIB4316EDK-T1-GE3.pdf
- Description:
- N-CHANNEL 30-V (D-S) MOSFET POWE
- Quantity:
- Payment:
- Shipping:
Inventory:8,850
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Product details
Overview
SIB4316EDK-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® power MOSFET in a thermally enhanced PowerPAK® SC-75-6L package, delivering RDS(on) = 0.057 Ω at VGS = 10 V, Qg = 3.5 nC (at VGS = 4.5 V), and 6 A continuous drain current - optimized for portable device load switching and DC/DC converter high-side control.
For engineers reviewing the SIB4316EDK-T1-GE3 datasheet, SIB4316EDK-T1-GE3 pinout, SIB4316EDK-T1-GE3 application, or SIB4316EDK-T1-GE3 equivalent, this part supports compact power management designs requiring low gate charge, robust thermal performance (RthJC = 10 °C/W), and verified 1500 V HBM ESD protection in space-constrained mobile platforms.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with minimal gate drive requirements. Its 6-pin PowerPAK SC-75 package integrates three parallel drain terminals (Pins 1, 4, 5) and a dual-source configuration (Pins 2, 6) to reduce package inductance and improve current sharing.
The device features a gate threshold voltage of 0.6–1.4 V (VGS(th)) and exhibits stable RDS(on) over temperature - 1.2× normalized at 125 °C under VGS = 10 V - enabling reliable operation in battery-powered systems where junction temperature can exceed 100 °C during transient loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage compatible with 3.3 V–5 V logic-level gate drive and 24 V input rails in portable power stages. |
| RDS(on) max @ VGS = 4.5 V | 0.062 Ω - Enables ≤185 mW conduction loss at 3 A, critical for efficiency in always-on load switches and buck converter synchronous rectifiers. |
| Qg typ. @ VGS = 4.5 V | 3.5 nC - Low gate charge reduces driver power consumption and enables >1 MHz switching in compact DC/DC converters without excessive gate drive losses. |
| ID continuous @ TC = 25 °C | 6 A - Supported by thermally optimized PowerPAK SC-75 package with exposed drain paddle, allowing high-current capability in <2.6 mm² footprint. |
| RthJC max | 12.5 °C/W - Junction-to-case thermal resistance enables direct heatsinking via PCB copper pour or metal-core substrate, supporting sustained 3.6 A at TA = 70 °C. |
| VGS(th) | 0.6–1.4 V - Logic-compatible threshold ensures turn-on with standard 1.8 V/3.3 V microcontroller GPIOs, eliminating need for level-shifting circuitry. |
| ESD HBM | 1500 V - Factory-tested human-body-model robustness simplifies ESD handling in automated assembly and improves field reliability in handheld devices. |
Pinout & Package
PowerPAK® SC-75-6L is a leadless, surface-mount package with 1.6 mm × 1.6 mm footprint, featuring an exposed drain paddle on the bottom side for thermal and electrical connection. Pin 1, Pin 4, and Pin 5 are internally connected to the drain; Pin 2 and Pin 6 are source terminals; Pin 3 is the gate terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 4, 5 | Drain (D) | Three parallel drain connections reduce package inductance and improve current distribution - essential for minimizing voltage spikes in high-dI/dt switching applications. |
| 2, 6 | Source (S) | Dual-source terminals lower source inductance and enable Kelvin sensing configurations for accurate current monitoring in precision power stages. |
| 3 | Gate (G) | Single gate input with Rg = 0.6–6.6 Ω - supports direct drive from low-power controllers and allows external gate resistor tuning for EMI/speed trade-offs. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers 20 % lower RDS(on) vs. planar MOSFETs at same die size - enabling higher current density in ultra-compact PowerPAK SC-75 footprint. |
| Thermally enhanced PowerPAK SC-75 | Exposes drain paddle for direct thermal path to PCB - achieves 10 °C/W RthJC, outperforming standard SC-70 packages by >30 % in thermal resistance. |
| 100 % Rg tested | Guarantees gate resistance between 0.6 Ω and 6.6 Ω - eliminates variability in switching speed and enables predictable gate drive design across production lots. |
| Body diode trr = 10–20 ns | Ultra-fast reverse recovery minimizes shoot-through risk and conduction loss in synchronous buck topologies operating above 500 kHz. |
| Marking code AK | Laser-marked identifier on top surface - enables traceability and verification of authentic Vishay Siliconix product during incoming inspection and field failure analysis. |
Applications
| Smartphone Load Switch | Tablet PC DC/DC Converter |
|---|---|
Use Scenario: Power gating of camera modules and USB peripherals to extend battery life during standby. IC Role / Device Role / Timing Role: High-side load switch controlling 3.3 V or 5 V rail with fast turn-on/turn-off (<100 ns). Use Value: Low RDS(on) (0.062 Ω @ 4.5 V) limits dropout to <185 mV at 3 A, preserving system voltage margin while reducing self-heating. |
Use Scenario: Synchronous rectifier in 1.2 V/10 A buck converter powering SoC cores. IC Role / Device Role / Timing Role: Low-side switch in two-phase interleaved topology with 1 MHz switching frequency. Use Value: 3.5 nC Qg enables efficient gate drive with 1-Ω resistor, achieving <60 ns rise time and minimizing switching loss at high frequency. |
| Mobile Computing PMIC | Wearable Power Management |
Use Scenario: Integrated power management IC output stage for SSD or display backlight control. IC Role / Device Role / Timing Role: Discrete high-efficiency switch replacing internal PMIC FETs to handle peak currents beyond integrated limits. Use Value: 6 A continuous rating at TC = 25 °C and 3.6 A at TA = 70 °C supports burst-mode operation in burst-intensive workloads without derating. |
Use Scenario: Always-on power path for Bluetooth LE sensor nodes with coin-cell battery supply. IC Role / Device Role / Timing Role: Ultra-low-quiescent-load switch enabling <1 μA off-state leakage (IDSS ≤ 1 μA). Use Value: VGS(th) range (0.6–1.4 V) ensures clean turn-on with 1.8 V I/O, while 1500 V HBM ESD withstand protects against handling damage in manual assembly. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiB431ADK-T1-GE3 | RDS(on) = 0.042 Ω @ 4.5 V (lower), Qg = 4.9 nC (higher), same PowerPAK SC-75 package and pinout. | Better conduction efficiency but slower switching - preferred for low-frequency, high-current load switching where gate drive power is less constrained. | Select SiB431ADK-T1-GE3 when RDS(on) reduction outweighs gate charge penalty, e.g., in always-on 3.3 V rail switches. |
| DMN3028LSD-13 | 30 V, RDS(on) = 0.028 Ω @ 4.5 V, SO-8 package (larger footprint), higher Qg = 10.5 nC, no HBM rating specified. | Higher current capability (8.5 A) but requires 5× larger board area and lacks factory-verified ESD robustness - unsuitable for space-limited portable designs. | Choose DMN3028LSD-13 only when board space permits and thermal budget allows SO-8 mounting with external heatsinking. |
Compared with SiB431ADK-T1-GE3 and DMN3028LSD-13, the SIB4316EDK-T1-GE3 uniquely balances ultra-compact size, low gate charge, and certified ESD protection - making it optimal for high-density, battery-sensitive applications where both efficiency and reliability must coexist within sub-3 mm² area.
Availability
SIB4316EDK-T1-GE3 is available at Aetrix Electronics and suitable for smartphone load switching, tablet PC DC/DC converters, and wearable power management requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for SIB4316EDK-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertically integrated wafer fabrication and packaging.
The SIB4316EDK-T1-GE3 belongs to Vishay's PowerPAK SC-75 TrenchFET® family, engineered specifically for space-constrained portable electronics demanding high current density, low gate charge, and robust thermal performance in sub-2.6 mm² footprints.
FAQ
What is the maximum continuous drain current for SIB4316EDK-T1-GE3 at ambient temperature?
The SIB4316EDK-T1-GE3 supports 4.5 A continuous drain current at TA = 25 °C and 3.6 A at TA = 70 °C under standard FR4 board conditions (1" × 1", 1 oz Cu). This rating reflects thermal limitations of the PowerPAK SC-75 package without forced airflow or heatsinking - actual current depends on PCB copper area and layout.
Does SIB4316EDK-T1-GE3 require a gate resistor for typical 3.3 V microcontroller drive?
Yes - while the SIB4316EDK-T1-GE3 has a low gate threshold (0.6–1.4 V), a series gate resistor (1–10 Ω) is recommended to dampen ringing and control dV/dt during switching. The device's Rg specification (0.6–6.6 Ω) confirms internal gate resistance variability, so external tuning ensures consistent turn-on/turn-off timing in production designs using SIB4316EDK-T1-GE3.
Is SIB4316EDK-T1-GE3 suitable for synchronous rectification in a 1 MHz buck converter?
Yes - the SIB4316EDK-T1-GE3 is validated for high-frequency operation with Qg = 3.5 nC (at VGS = 4.5 V), tr/tf < 60/90 ns, and body diode trr = 10–20 ns. These parameters enable efficient synchronous rectification up to 1.2 MHz in well-layouted 2-layer PCBs, provided gate drive strength meets 1–2 A peak current requirements for the SIB4316EDK-T1-GE3.
What is the thermal resistance from junction to ambient for SIB4316EDK-T1-GE3 on a standard PCB?
The SIB4316EDK-T1-GE3 has RthJA = 51–64 °C/W (typ./max.) on a 1" × 1" FR4 board with 1 oz copper. This value assumes no additional heatsinking - adding 200 mm² of 2 oz copper connected to the drain paddle reduces RthJA to ~40 °C/W. The lower RthJC = 10 °C/W confirms that thermal performance is dominated by PCB layout, not die characteristics, for the SIB4316EDK-T1-GE3.
How does the marking code 'AK' on SIB4316EDK-T1-GE3 relate to its electrical specifications?
The 'AK' laser marking on the SIB4316EDK-T1-GE3 identifies the specific device variant within the SiB4316EDK family and corresponds to the 30 V, 6 A, PowerPAK SC-75-6L configuration with RDS(on) = 0.057 Ω @ 10 V. Vishay uses alphanumeric codes to denote voltage rating, current grade, and package - 'AK' is traceable to datasheet revision S21-1168 and guarantees full compliance with all published specs for the SIB4316EDK-T1-GE3.
SIB4316EDK-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SC-75-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.5A (Ta), 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 57mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.9W (Ta), 10W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SC-75-6
SIB4316EDK-T1-GE3 FAQ
1.How can I place an order for SIB4316EDK-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIB4316EDK-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIB4316EDK-T1-GE3 reliable?
The price and inventory of SIB4316EDK-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIB4316EDK-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIB4316EDK-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIB4316EDK-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIB4316EDK-T1-GE3?
SIB4316EDK-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIB4316EDK-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIB4316EDK-T1-GE3?
For technical support, including SIB4316EDK-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIB4316EDK-T1-GE3 requirements.
6.How does Aetrix verify that SIB4316EDK-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIB4316EDK-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIB4316EDK-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIB4316EDK-T1-GE3?
All SIB4316EDK-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIB4316EDK-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIB4316EDK-T1-GE3 part is unused and in its original packaging.
Return procedure for SIB4316EDK-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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