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Vishay Siliconix SIB437EDKT-T1-GE3
- Part No.:
- SIB437EDKT-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® TSC-75-6
- Datasheet:
-
SIB437EDKT-T1-GE3.pdf
- Description:
- MOSFET P-CH 8V 9A PPAK TSC75-6
- Quantity:
- Payment:
- Shipping:
Inventory:6,792
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Product details
Overview
SIB437EDKT-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET in a Thin PowerPAK® SC-75-6L package, rated for -8 V VDS, 0.034 Ω RDS(on) at -4.5 V VGS, and -9 A continuous drain current at TC = 25 °C. It serves as a low-voltage load switch in portable power management circuits with ultra-thin 0.6 mm profile and halogen-free construction.
For engineers reviewing the SIB437EDKT-T1-GE3 datasheet, SIB437EDKT-T1-GE3 pinout, SIB437EDKT-T1-GE3 application, or SIB437EDKT-T1-GE3 equivalent, key selection criteria include gate threshold voltage (-0.7 V typ.), body diode forward voltage (-0.8 V at -6 A), thermal resistance (RthJA = 41 °C/W typ.), Qg = 10.5 nC, and compatibility with 1.2–4.5 V logic-level gate drive in space-constrained battery-powered systems.
Technical Context
This device employs trench-gate silicon technology to achieve low on-resistance and fast switching in a leadless 6-lead SC-75 footprint. Its negative VGS(th) (-0.7 V typ.) enables direct interface with 1.8 V and 2.5 V controllers without level shifting, while the integrated Zener-protected gate ensures 2000 V HBM ESD robustness.
The Thin PowerPAK SC-75 package delivers 7.5 °C/W typical junction-to-case thermal resistance and supports high-density PCB layouts with 1.6 mm × 1.6 mm area. Its drain-source breakdown voltage is tightly specified at -8 V with -2 mV/°C temperature coefficient, and body diode recovery time is 30 ns (typ.) under 100 A/µs dI/dt conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -8 V - Maximum reverse blocking capability for low-voltage rail switching |
| RDS(on) | 0.034 Ω at VGS = -4.5 V - Enables <100 mW conduction loss at 6 A load current |
| ID (cont) | -9 A at TC = 25 °C - Package-limited current handling for thermally anchored designs |
| Qg | 10.5 nC - Supports efficient 1–2 MHz switching in synchronous buck or load-switch topologies |
| VGS(th) | -0.7 V (typ.) - Ensures full enhancement with 1.8 V logic outputs without gate boosting |
| RthJA | 41 °C/W (typ.) - Allows ~2.4 W dissipation at 25 °C ambient on standard FR4 |
| VSD | -0.8 V at IS = -6 A - Low forward drop for bidirectional current paths in USB OTG or battery protection |
Pinout & Package
Thin PowerPAK® SC-75-6L-Single package: 1.60 mm × 1.60 mm × 0.60 mm, leadless, exposed-drain thermal pad, RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts -1.2 V to -4.5 V logic for full enhancement; 80–800 Ω gate resistance affects switching speed |
| 2 (S) | Source | Reference node for gate drive; connects to system ground or floating rail; carries full load current |
| 3 (D) | Drain | High-side switch output; ties to input rail; thermally connected to exposed copper pad on bottom |
| 4 (D) | Drain | Parallel drain connection; reduces package inductance and improves current sharing across dual-drain terminals |
| 5 (S) | Source | Second source terminal; lowers source inductance and improves stability in high-dI/dt switching |
| 6 (D) | Drain | Third drain terminal; enhances thermal conduction path to PCB copper pour via exposed pad |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 34 mΩ RDS(on) at -4.5 V in 1.6 mm² footprint-enables compact, high-efficiency load switches |
| Ultra-thin 0.6 mm height | Reduces board stack height for slim smartphones, wearables, and hearing aids where Z-axis clearance is critical |
| Built-in Zener ESD protection | 2000 V HBM rating eliminates need for external gate protection in handheld device front-end circuits |
| 100 % Rg tested | Guarantees gate resistance between 80 Ω and 800 Ω-ensures predictable turn-on/turn-off timing in production |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC-supports green manufacturing and export compliance |
Applications
| USB Type-C Port Power Switching | Smartphone Battery Protection Circuit |
|---|---|
Use Scenario: Controlling VBUS enable/disable on USB-C receptacles during plug insertion/removal and role swap events. IC Role / Device Role / Timing Role: High-side P-channel load switch managing up to 3 A at 5 V with fast turn-off to prevent backfeed during disconnect. Use Value: 30 ns body diode reverse recovery and -0.8 V VSD minimize voltage droop and cross-conduction risk during hot-swap transitions. | Use Scenario: Isolating main Li-ion battery from system rails during overvoltage, overtemperature, or short-circuit fault conditions. IC Role / Device Role / Timing Role: Primary discharge path switch activated by fuel gauge or protection IC with 1.8 V logic-compatible gate drive. Use Value: -0.7 V VGS(th) allows direct interface with TI BQ series or Richtek RT9467 without level shifters, reducing BOM count. |
| Wireless Earbud Charging Case Load Switch | Low-Power IoT Sensor Node Power Gating |
Use Scenario: Enabling/disabling charging current to earbud batteries only when lid is closed and presence detected. IC Role / Device Role / Timing Role: Ultra-low quiescent current (±5 µA IGSS) load switch controlled by hall-effect sensor output. Use Value: 0.063 Ω RDS(on) at -1.8 V VGS keeps voltage drop below 120 mV at 2 A-preserving charging efficiency in compact form factor. | Use Scenario: Powering down BLE SoC, environmental sensors, and RF transceivers during deep sleep modes to extend battery life. IC Role / Device Role / Timing Role: Always-on, low-leakage power gate with -1 µA IDSS at -8 V ensuring <1 µA standby current per switched rail. Use Value: 0.180 Ω RDS(on) at -1.2 V VGS supports microcontroller GPIO control-eliminating need for dedicated PMIC in cost-sensitive nodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiB436EDKT-T1-GE3 | VDS = -12 V, RDS(on) = 0.042 Ω at -4.5 V, higher VGS(th) (-0.85 V typ.) | Supports wider input range (up to 12 V) but requires stronger gate drive for same on-resistance | Select when system rail exceeds 8 V or higher blocking margin is required |
| DMN2041LFG-7 | VDS = -20 V, RDS(on) = 0.055 Ω at -4.5 V, SOT-723 package (1.25 mm × 1.25 mm) | Smaller footprint but higher RDS(on) and lower current rating (-4.5 A) | Select when board area is more constrained than on-resistance or current capacity |
Compared with SiB436EDKT-T1-GE3 and DMN2041LFG-7, the SIB437EDKT-T1-GE3 offers optimal balance of low on-resistance (0.034 Ω), compact 1.6 mm² footprint, and 1.2–4.5 V gate compatibility-making it ideal for 5 V portable systems where thermal performance and logic-level drive are prioritized over extended voltage range or minimal area.
Availability
SIB437EDKT-T1-GE3 is available at Aetrix Electronics and suitable for USB-C power delivery, smartphone battery protection, wireless earbud charging cases, and low-power IoT sensor node power gating requiring stable component supply and long-term lifecycle support.
Supply support for SIB437EDKT-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The SIB437EDKT-T1-GE3 belongs to Vishay's Thin PowerPAK SC-75 TrenchFET® family, engineered specifically for space-constrained, battery-powered applications demanding low gate charge, logic-level drive, and ultra-low profile packaging.
FAQ
What is the maximum continuous drain current rating for SIB437EDKT-T1-GE3 at 70 °C case temperature?
The SIB437EDKT-T1-GE3 supports -9 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects package thermal limits-not silicon capability-and assumes adequate PCB copper area for heat spreading. Derating curves confirm linear reduction to -6 A at TC = 70 °C for ambient-referenced designs.
Does SIB437EDKT-T1-GE3 require external gate protection against ESD?
No, the SIB437EDKT-T1-GE3 integrates built-in Zener diode gate protection and is rated for 2000 V HBM ESD per JESD22-A114. This eliminates the need for external gate resistors or TVS diodes in most portable applications, provided layout follows Vishay's recommended grounding and trace isolation practices outlined in document 67402.
Can SIB437EDKT-T1-GE3 be driven directly by a 1.8 V GPIO without level shifting?
Yes, the SIB437EDKT-T1-GE3 has a typical gate threshold voltage of -0.7 V and guarantees RDS(on) = 0.063 Ω at VGS = -1.8 V, enabling full enhancement from 1.8 V logic sources. Its low gate charge (10.5 nC) also ensures fast switching even with limited drive strength, making it suitable for direct interface with microcontrollers like Nordic nRF52 or Silicon Labs EFM32.
What is the thermal resistance from junction to ambient for SIB437EDKT-T1-GE3 on a standard FR4 board?
The SIB437EDKT-T1-GE3 exhibits a typical junction-to-ambient thermal resistance (RthJA) of 41 °C/W when mounted on a 1" × 1" FR4 board with 2 oz copper, per test condition b in the datasheet. Maximum RthJA is 51 °C/W. This value assumes no additional heatsinking; adding thermal vias under the exposed drain pad can reduce RthJA by up to 30 %.
Is SIB437EDKT-T1-GE3 compatible with lead-free reflow soldering processes?
Yes, the SIB437EDKT-T1-GE3 is qualified for lead-free reflow with a peak temperature of 260 °C, as stated in the Soldering Recommendations section. The Thin PowerPAK SC-75 package is leadless with exposed copper terminations; Vishay specifies that a solder fillet at the copper tip is not required, and interconnection relies on bottom-side solder wetting to the thermal pad and perimeter lands.
SIB437EDKT-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® TSC-75-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 8 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 34mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 4.5 V
- Vgs (Max):
- ±5V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 2.4W (Ta), 13W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® TSC75-6
SIB437EDKT-T1-GE3 FAQ
1.How can I place an order for SIB437EDKT-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIB437EDKT-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIB437EDKT-T1-GE3 reliable?
The price and inventory of SIB437EDKT-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIB437EDKT-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIB437EDKT-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIB437EDKT-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIB437EDKT-T1-GE3?
SIB437EDKT-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIB437EDKT-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIB437EDKT-T1-GE3?
For technical support, including SIB437EDKT-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIB437EDKT-T1-GE3 requirements.
6.How does Aetrix verify that SIB437EDKT-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIB437EDKT-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIB437EDKT-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIB437EDKT-T1-GE3?
All SIB437EDKT-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIB437EDKT-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIB437EDKT-T1-GE3 part is unused and in its original packaging.
Return procedure for SIB437EDKT-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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