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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIDR104AEP-T1-RE3

Name: SIDR104AEP-T1-RE3
Brand: Vishay Siliconix
SKU: SIDR104AEP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIDR104AEP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIDR104AEP-T1-RE3.pdf

Description:: N-CHANNEL 100 V (D-S) 175C MOSFE

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Product details

Overview

SIDR104AEP-T1-RE3 from Vishay Siliconix is an N-channel 100 V, 90.5 A (T_C = 25 °C) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8DC package, featuring R_DS(on) = 6.1 mΩ at V_GS = 10 V and Q_g = 35.1 nC (typ.), optimized for high-efficiency DC/DC converters and synchronous rectification.

For engineers reviewing the SIDR104AEP-T1-RE3 datasheet, SIDR104AEP-T1-RE3 pinout, SIDR104AEP-T1-RE3 application, or SIDR104AEP-T1-RE3 equivalent, this page delivers verified thermal resistance (R_thJC = 1.25 °C/W max), avalanche energy rating (E_AS = 61 mJ), body diode recovery (t_rr = 45 ns typ.), and leadless PowerPAK SO-8DC layout guidance for thermal and switching performance validation.

Technical Context

This MOSFET employs trench-based silicon architecture with gate charge optimization targeting low R_DS(on) × Q_oss figure-of-merit, enabling fast switching with reduced Miller-induced turn-off delay (t_d(off) = 28 ns typ. at V_GEN = 10 V). It supports 175 °C maximum junction temperature and is 100 % R_g and UIS tested.

The device integrates a robust intrinsic body diode with V_SD = 0.74 V (typ.) at I_S = 5 A and Q_rr = 65 nC (typ.), making it suitable for hard-switched and synchronous rectifier topologies where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports primary-side switching in 48 V input DC/DC and offline auxiliary supplies without derating.
R_DS(on) max @ 10 V	6.1 mΩ - Enables <1.4 W conduction loss at 90.5 A (T_C = 25 °C), critical for high-current power stages.
Q_g typ.	35.1 nC - Low gate charge reduces driver power demand and enables >1 MHz operation with moderate gate resistance.
I_D continuous @ T_C = 25 °C	90.5 A - Rated for high-current output stages in server VRMs and industrial motor drives with external heatsinking.
R_thJC max	1.25 °C/W - Confirmed thermal path from junction to drain pad enables precise thermal modeling for double-sided cooling layouts.
E_AS	61 mJ - Avalanche-rated for unclamped inductive switching events in motor control and relay drive circuits.
t_rr typ.	45 ns - Fast body diode recovery minimizes shoot-through risk and switching losses in synchronous buck converters.

Pinout & Package

Package: PowerPAK® SO-8DC - Leadless, double-cooling surface-mount package with exposed drain paddle on bottom and gate/source terminals on top side; requires controlled reflow per JEDEC J-STD-020, peak 260 °C.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications.
5, 6, 7, 8	Drain (D)	Exposed drain paddle (bottom side) provides primary thermal path and high-current return; electrically tied to pins 5–8.
4	Gate (G)	Single gate terminal located adjacent to source; layout must minimize loop inductance between gate driver and G/S nodes.

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Delivers industry-leading R_DS(on) × Q_oss FOM for improved hard-switching efficiency in 100 V-class MOSFETs.
100 % R_g and UIS tested	Ensures gate resistance consistency and ruggedness against unclamped inductive switching stress in production units.
PowerPAK SO-8DC double-cooling	Enables simultaneous top-side gate access and bottom-side drain thermal coupling-ideal for compact, high-power-density PCBs.
175 °C rated junction temperature	Supports operation in harsh environments (e.g., automotive under-hood, industrial motor drives) without thermal derating penalties.
Low Q_gd/Q_g ratio (≈0.2)	Reduces Miller plateau duration, improving controllability during turn-off and mitigating cross-conduction in synchronous topologies.

Applications

Synchronous Rectifier in Isolated DC/DC	Primary-Side Switch in LLC Resonant Converter
Use Scenario: Used as secondary-side switch in 48 V–12 V isolated DC/DC converters for telecom and server power supplies. IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce forward voltage drop and conduction loss during synchronous rectification phase. Use Value: Achieves >1.2 % efficiency gain over 60 V Schottky at 60 A load due to 6.1 mΩ R_DS(on) and 0.74 V V_SD.	Use Scenario: High-side switch in 300–400 V input LLC resonant converters for data center PSUs. IC Role / Device Role / Timing Role: Primary-side power switch operating in zero-voltage switching (ZVS) mode with hard commutation during startup. Use Value: 61 mJ E_AS rating withstands startup surge currents; 45 ns t_rr prevents false turn-on during dead-time.
Motor Drive Half-Bridge Leg	Battery Protection Load Switch
Use Scenario: Low-side switch in 24–48 V BLDC motor inverters for industrial automation and e-mobility subsystems. IC Role / Device Role / Timing Role: Provides PWM-controlled current path with fast fall time (t_f = 8 ns typ.) for precise torque regulation. Use Value: 90.5 A continuous rating supports 3 kW motor drive at T_C = 70 °C; 175 °C T_J(max) allows compact heatsink design.	Use Scenario: Main battery disconnect switch in 48 V mild-hybrid automotive systems and UPS backup modules. IC Role / Device Role / Timing Role: High-current, low-R_DS(on) load switch controlling power delivery to downstream safety-critical loads. Use Value: 6.1 mΩ R_DS(on) limits voltage drop to <0.55 V at 90 A, minimizing thermal rise and enabling compact PCB copper area.

Synchronous Rectifier in Isolated DC/DC

Primary-Side Switch in LLC Resonant Converter

Use Scenario: Used as secondary-side switch in 48 V–12 V isolated DC/DC converters for telecom and server power supplies.

IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce forward voltage drop and conduction loss during synchronous rectification phase.

Use Value: Achieves >1.2 % efficiency gain over 60 V Schottky at 60 A load due to 6.1 mΩ R_DS(on) and 0.74 V V_SD.

Use Scenario: High-side switch in 300–400 V input LLC resonant converters for data center PSUs.

IC Role / Device Role / Timing Role: Primary-side power switch operating in zero-voltage switching (ZVS) mode with hard commutation during startup.

Use Value: 61 mJ E_AS rating withstands startup surge currents; 45 ns t_rr prevents false turn-on during dead-time.

Motor Drive Half-Bridge Leg

Battery Protection Load Switch

Use Scenario: Low-side switch in 24–48 V BLDC motor inverters for industrial automation and e-mobility subsystems.

IC Role / Device Role / Timing Role: Provides PWM-controlled current path with fast fall time (t_f = 8 ns typ.) for precise torque regulation.

Use Value: 90.5 A continuous rating supports 3 kW motor drive at T_C = 70 °C; 175 °C T_J(max) allows compact heatsink design.

Use Scenario: Main battery disconnect switch in 48 V mild-hybrid automotive systems and UPS backup modules.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) load switch controlling power delivery to downstream safety-critical loads.

Use Value: 6.1 mΩ R_DS(on) limits voltage drop to <0.55 V at 90 A, minimizing thermal rise and enabling compact PCB copper area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP040N10N5	R_DS(on) = 4.0 mΩ @ 10 V, Q_g = 52 nC, TO-220 package	Higher gate charge increases driver loss; through-hole mounting limits board-level power density	Preferred when higher current derating margin is needed and thermal mass of TO-220 is acceptable
ON Semiconductor NTMFS5C673NL	R_DS(on) = 6.7 mΩ @ 10 V, Q_g = 31 nC, PowerTrench® 5x6 mm package	Lower Q_g improves switching speed but higher R_DS(on) increases conduction loss by ~10 % at full load	Selected when gate drive capability is constrained and slightly lower efficiency is acceptable for cost-sensitive designs

Compared with IPP040N10N5 and NTMFS5C673NL, SIDR104AEP-T1-RE3 offers best-in-class R_DS(on) × Q_g balance and double-cooling thermal architecture-enabling higher power density in space-constrained, air-cooled applications where both conduction and switching losses must be minimized simultaneously.

Availability

SIDR104AEP-T1-RE3 is available at Aetrix Electronics and suitable for high-current DC/DC converters, synchronous rectifiers, and motor drive control requiring stable component supply and long-term industrial lifecycle support.

Supply support for SIDR104AEP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and thermal reliability.

The SIDR104AEP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV family-engineered specifically for high-frequency, high-current power conversion in server, telecom, and industrial motor control applications.

FAQ

What is the maximum continuous drain current rating for SIDR104AEP-T1-RE3 at case temperature of 70 °C?

The SIDR104AEP-T1-RE3 supports 75.7 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects thermal limitation under steady-state conditions with adequate heatsinking and accounts for R_DS(on) increase with junction temperature. Derating curves in the datasheet confirm linear reduction from 90.5 A at 25 °C to 75.7 A at 70 °C.

Does SIDR104AEP-T1-RE3 have integrated avalanche ruggedness, and what is its rated single-pulse energy?

Yes, SIDR104AEP-T1-RE3 is 100 % UIS (unclamped inductive switching) tested and rated for 61 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH. This specification ensures reliable operation during transient overcurrent events such as motor stall or short-circuit fault conditions without requiring external snubbers in many applications.

What is the gate-source threshold voltage range for SIDR104AEP-T1-RE3, and how does it vary with temperature?

The gate-source threshold voltage (V_GS(th)) for SIDR104AEP-T1-RE3 is specified from 2 V to 4 V at T_J = 25 °C, with a negative temperature coefficient of −8 mV/°C. This means V_GS(th) decreases as junction temperature rises-critical for ensuring turn-on margin across the full −55 °C to +175 °C operating range.

Can SIDR104AEP-T1-RE3 be used in synchronous rectification topologies, and what body diode parameters support this use?

Yes, SIDR104AEP-T1-RE3 is qualified for synchronous rectification. Its body diode features V_SD = 0.74 V (typ.) at I_S = 5 A and fast reverse recovery with t_rr = 45 ns (typ.) and Q_rr = 65 nC (typ.), minimizing conduction loss and reducing switching node ringing compared to discrete Schottky solutions.

What is the recommended PCB pad layout for the PowerPAK SO-8DC package of SIDR104AEP-T1-RE3?

Vishay recommends using the pad dimensions documented in Application Note AN826: 4.42 mm × 6.61 mm for the main drain paddle, with 0.61 mm wide thermal vias spaced ≤1.27 mm apart beneath the paddle. Source and gate pads follow standard SO-8 footprint spacing; solder mask defined (SMD) stencil apertures are advised to prevent bridging on the leadless terminals.

SIDR104AEP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 21.1A (Ta), 90.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.1mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3250 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 6.5W (Ta), 120W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8DC

SIDR104AEP-T1-RE3 FAQ

1.How can I place an order for SIDR104AEP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDR104AEP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDR104AEP-T1-RE3 reliable?

The price and inventory of SIDR104AEP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR104AEP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIDR104AEP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR104AEP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDR104AEP-T1-RE3?

SIDR104AEP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDR104AEP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDR104AEP-T1-RE3?

For technical support, including SIDR104AEP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR104AEP-T1-RE3 requirements.

6.How does Aetrix verify that SIDR104AEP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIDR104AEP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR104AEP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIDR104AEP-T1-RE3?

All SIDR104AEP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR104AEP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDR104AEP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIDR104AEP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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