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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIDR220DP-T1-GE3

Name: SIDR220DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIDR220DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIDR220DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIDR220DP-T1-GE3.pdf

Description:: MOSFET N-CH 25V 87.7A/100A PPAK

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Product details

Overview

SIDR220DP-T1-GE3 from Vishay Siliconix is an N-channel 25 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8DC package, delivering R_DS(on) = 0.00058 Ω at V_GS = 10 V and 0.00082 Ω at V_GS = 4.5 V, with 100 A continuous drain current (T_J = 150 °C), optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SIDR220DP-T1-GE3 datasheet, SIDR220DP-T1-GE3 pinout, SIDR220DP-T1-GE3 application, or SIDR220DP-T1-GE3 equivalent, key selection criteria include low gate charge (Q_g = 61 nC typ. at 4.5 V), top-side cooling capability, 100 % R_g and UIS testing, and thermal resistance R_thJC = 0.8 °C/W (drain).

Technical Context

This MOSFET employs TrenchFET® Gen IV process technology to achieve ultra-low R_DS(on) and optimized Q_gd/Q_gs ratio, reducing switching losses in high-frequency power stages. Its PowerPAK® SO-8DC package features exposed copper drain pads on both top and bottom surfaces for dual-sided thermal management.

The device supports robust operation with ±12 V/-12 V gate drive tolerance, 60 A single-pulse avalanche current rating, and 180 mJ avalanche energy-enabling reliable performance in hard-switched and synchronous buck topologies under transient stress conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V and 24 V input systems.
R_DS(on) max @ 10 V	0.00058 Ω - Enables <1.2 W conduction loss at 50 A, critical for high-current synchronous rectifiers.
R_DS(on) max @ 4.5 V	0.00082 Ω - Ensures low on-resistance even with logic-level gate drive, supporting 3.3 V/5 V controller compatibility.
Q_g typ. @ 4.5 V	61 nC - Reduces gate drive power and switching transition time in high-frequency (>500 kHz) DC/DC designs.
I_D cont. (T_J = 150 °C)	100 A - Supports high-current output rails in server VRMs and telecom power supplies without parallel devices.
R_thJC (drain)	0.8 °C/W max - Allows direct heatsinking to PCB copper or external cooler via top-side drain pad, improving thermal headroom.
V_GS(th)	1.0–2.1 V - Low threshold enables fast turn-on with minimal gate overdrive, reducing Miller plateau duration.

Pinout & Package

Package: PowerPAK® SO-8DC - leadless, double-cooling surface-mount package with exposed drain terminals on top and bottom; dimensions 6.15 mm × 5.15 mm × 0.56 mm (L × W × H); RoHS-compliant, halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection; electrically tied internally; provides low-inductance return path for high di/dt currents.
5, 6, 7, 8	Drain (D)	Primary power terminal; exposed copper on top and bottom enables dual-surface thermal transfer and high-current routing.
4 (center)	Gate (G)	Single gate input; isolated from power terminals; requires <0.75 Ω gate resistance to control ringing per datasheet test conditions.

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Delivers industry-leading R_DS(on) × Q_g figure of merit for reduced total switching + conduction loss.
Top-side cooling	Exposed drain pad on package top allows direct thermal interface to heatsink or thermal pad, augmenting bottom-side PCB cooling.
100 % R_g tested	Ensures consistent gate resistance (0.1–0.75 Ω) across production lots, critical for predictable switching timing and EMI behavior.
100 % UIS tested	Validates ruggedness against unclamped inductive switching events-essential for OR-ing and load-switching reliability.
Low Q_gd/Q_gs ratio	Minimizes Miller-induced gate oscillation and improves controllability during hard commutation in synchronous rectifiers.

Applications

Synchronous Buck Converter	Synchronous Rectification
Use Scenario: Primary high-side or secondary low-side switch in 48 V–12 V intermediate bus converter operating at 300–1000 kHz. IC Role / Device Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency. Use Value: Achieves >95 % efficiency at 60 A output due to 0.82 mΩ R_DS(on) at 4.5 V gate drive and 61 nC Q_g.	Use Scenario: Secondary-side rectification in isolated LLC or phase-shifted full-bridge DC/DC for AI accelerator power delivery. IC Role / Device Role: High-current, low-V_DS rectifying switch handling bidirectional current during dead-time body diode conduction. Use Value: Body diode V_SD = 0.71 V (typ.) and Q_rr = 87 nC enable low reverse-recovery loss and minimal voltage overshoot.
OR-ing Circuit	Battery Management System
Use Scenario: Hot-swap and redundancy path control in 12 V/24 V telecom or industrial backup power systems. IC Role / Device Role: Back-to-back configured MOSFET providing low-loss, bidirectional current blocking and fault isolation. Use Value: 100 A continuous rating and 60 A single-pulse avalanche current support sustained overload and short-circuit robustness.	Use Scenario: Cell-balancing or main discharge path switch in high-power Li-ion battery packs for EV charging infrastructure. IC Role / Device Role: High-current load switch managing up to 100 A discharge while maintaining <0.6 mΩ on-resistance at elevated temperature. Use Value: R_DS(on) increases only 1.4× from 25 °C to 125 °C (per normalized curve), ensuring stable performance across thermal range.

Synchronous Buck Converter

Synchronous Rectification

Use Scenario: Primary high-side or secondary low-side switch in 48 V–12 V intermediate bus converter operating at 300–1000 kHz.

IC Role / Device Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: Achieves >95 % efficiency at 60 A output due to 0.82 mΩ R_DS(on) at 4.5 V gate drive and 61 nC Q_g.

Use Scenario: Secondary-side rectification in isolated LLC or phase-shifted full-bridge DC/DC for AI accelerator power delivery.

IC Role / Device Role: High-current, low-V_DS rectifying switch handling bidirectional current during dead-time body diode conduction.

Use Value: Body diode V_SD = 0.71 V (typ.) and Q_rr = 87 nC enable low reverse-recovery loss and minimal voltage overshoot.

OR-ing Circuit

Battery Management System

Use Scenario: Hot-swap and redundancy path control in 12 V/24 V telecom or industrial backup power systems.

IC Role / Device Role: Back-to-back configured MOSFET providing low-loss, bidirectional current blocking and fault isolation.

Use Value: 100 A continuous rating and 60 A single-pulse avalanche current support sustained overload and short-circuit robustness.

Use Scenario: Cell-balancing or main discharge path switch in high-power Li-ion battery packs for EV charging infrastructure.

IC Role / Device Role: High-current load switch managing up to 100 A discharge while maintaining <0.6 mΩ on-resistance at elevated temperature.

Use Value: R_DS(on) increases only 1.4× from 25 °C to 125 °C (per normalized curve), ensuring stable performance across thermal range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 0.75 mΩ @ 4.5 V; Q_g = 42 nC; PowerPAK® 1212-8 package; lower current rating (60 A).	Preferred where gate drive voltage is limited to ≤4.5 V and layout space is constrained; less suitable for >80 A continuous loads.	Select when prioritizing lowest possible Q_g and compact footprint over ultimate current capacity.
SIDR210DP-T1-GE3	R_DS(on) = 0.45 mΩ @ 4.5 V; same package; 100 A rating; higher cost and slightly higher Q_g (68 nC).	Better suited for ultra-high-efficiency 48 V input systems where sub-0.5 mΩ R_DS(on) justifies marginal efficiency gain.	Choose when system efficiency targets demand <0.5 mΩ R_DS(on) at 4.5 V and thermal margin permits higher Q_g.

Compared with IRLHS6342TRPBF, SIDR220DP-T1-GE3 delivers 9% lower R_DS(on) and 67% higher current rating but requires more gate drive energy; versus SIDR210DP-T1-GE3, it trades 13% higher R_DS(on) for 9% lower Q_g, favoring high-frequency switching over peak efficiency.

Availability

SIDR220DP-T1-GE3 is available at Aetrix Electronics and suitable for high-density DC/DC converters, synchronous rectification modules, and battery protection circuits requiring stable component supply, long-term manufacturability, and Vishay-qualified automotive/industrial grade reliability.

Supply support for SIDR220DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency, thermal performance, and reliability.

The SIDR220DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8DC family, engineered specifically for high-current, high-frequency power conversion in data center, telecom, and industrial power supplies.

FAQ

What is the maximum continuous drain current rating for SIDR220DP-T1-GE3 at 70 °C case temperature?

The SIDR220DP-T1-GE3 supports 100 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal vias to maintain case temperature, and is identical to its 25 °C rating due to the package's low R_thJC (0.8 °C/W) and high thermal mass.

Does SIDR220DP-T1-GE3 support logic-level gate drive?

Yes, SIDR220DP-T1-GE3 is fully compatible with logic-level gate drive: its V_GS(th) ranges from 1.0 V to 2.1 V, and it achieves R_DS(on) = 0.00082 Ω at V_GS = 4.5 V. This enables direct interfacing with 3.3 V or 5 V PWM controllers without level-shifting circuitry.

What thermal metrics define the cooling capability of SIDR220DP-T1-GE3?

The SIDR220DP-T1-GE3 features R_thJC = 0.8 °C/W (drain) and R_thJC = 1.1 °C/W (source), plus top-side cooling via exposed drain pad. Its R_thJA is 15–20 °C/W on a 1" × 1" FR4 board, but thermal performance scales significantly with PCB copper area and thermal vias-making it ideal for thermally demanding high-power density designs.

Is SIDR220DP-T1-GE3 suitable for avalanche-rated applications?

Yes, SIDR220DP-T1-GE3 is 100 % UIS (unclamped inductive switching) tested, with rated single-pulse avalanche current I_AS = 60 A and energy E_AS = 180 mJ. These validated ratings confirm robustness in OR-ing, load switching, and hard-switched topologies where inductive energy must be safely absorbed.

How does the PowerPAK® SO-8DC package differ from standard SO-8 in terms of assembly and rework?

The PowerPAK® SO-8DC is a leadless package with exposed copper drain terminals on both top and bottom surfaces. Manual soldering with an iron is not recommended; rework requires controlled hot-air or infrared profiling per Vishay doc# 73257. Solder fillets at the exposed copper tip are not required-the bottom-side interconnection is sufficient for mechanical and electrical integrity.

SIDR220DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 87.7A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 200 nC @ 10 V

Vgs (Max):: +16V, -12V

Input Capacitance (Ciss) (Max) @ Vds:: 1085 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8DC

SIDR220DP-T1-GE3 FAQ

1.How can I place an order for SIDR220DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDR220DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDR220DP-T1-GE3 reliable?

The price and inventory of SIDR220DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR220DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIDR220DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR220DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDR220DP-T1-GE3?

SIDR220DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDR220DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDR220DP-T1-GE3?

For technical support, including SIDR220DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR220DP-T1-GE3 requirements.

6.How does Aetrix verify that SIDR220DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIDR220DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR220DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIDR220DP-T1-GE3?

All SIDR220DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR220DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDR220DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIDR220DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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