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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIDR220DP-T1-RE3

Name: SIDR220DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIDR220DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIDR220DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIDR220DP-T1-RE3.pdf

Description:: N-CHANNEL 25-V (D-S) MOSFET

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Product details

Overview

SIDR220DP-T1-RE3 from Vishay Siliconix is an N-channel 25 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8DC package, delivering R_DS(on) = 0.00058 Ω at V_GS = 10 V and 0.00082 Ω at V_GS = 4.5 V, with 100 A continuous drain current (T_J = 150 °C) and top-side cooling capability - optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SIDR220DP-T1-RE3 datasheet, SIDR220DP-T1-RE3 pinout, SIDR220DP-T1-RE3 application, or SIDR220DP-T1-RE3 equivalent, this page provides verified electrical parameters, thermal performance data, validated package dimensions, and real-world use cases in high-density power conversion systems.

Technical Context

This MOSFET employs TrenchFET® Gen IV process technology to achieve ultra-low gate charge (Q_g = 61 nC typ. at V_GS = 4.5 V) and optimized Q_gd/Q_gs ratio, reducing switching losses in hard-switched and synchronous buck topologies. Its top-side cooling feature enables direct thermal interface to heatsinks or PCB copper on the drain paddle side.

The device integrates a robust body diode with t_rr = 63 ns (typ.) and Q_rr = 87 nC (typ.), supporting fast-recovery operation in OR-ing and reverse-current blocking applications. It is 100 % R_g and UIS tested per JEDEC JESD22-A115, ensuring ruggedness under transient overvoltage conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - maximum drain-source blocking voltage, suitable for 12 V and 24 V input rail systems
R_DS(on) @ V_GS = 10 V	0.00058 Ω - enables <1.2 W conduction loss at 50 A, critical for high-current synchronous rectifiers
R_DS(on) @ V_GS = 4.5 V	0.00082 Ω - supports logic-level gate drive compatibility with standard PWM controllers
Q_g (typ.)	61 nC - low total gate charge reduces driver power demand and improves efficiency at 500 kHz–1 MHz switching
I_D (continuous)	100 A at T_C = 25 °C - rated for high-current output stages without forced airflow
R_thJC (drain)	0.8 °C/W (typ.) - enables >100 W power dissipation with minimal junction-to-case temperature rise
V_GS(th)	1.0–2.1 V - ensures reliable turn-on with standard gate drivers while minimizing shoot-through risk

Pinout & Package

Package: PowerPAK® SO-8DC - leadless, double-cooling surface-mount package with exposed drain paddle on bottom and top-side thermal pad for dual-surface heat extraction.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt applications
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connected to large exposed copper paddle - primary thermal path to PCB or heatsink
4 (top-side)	Gate (G)	Single gate terminal located adjacent to source pins - minimizes gate loop inductance for stable high-speed switching

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Delivers industry-leading R_DS(on) × Q_g figure of merit (FOM) for reduced switching + conduction loss trade-off
Top-side cooling capability	Enables thermal management via both PCB bottom-side and external heatsink contact on top metal layer
100 % R_g and UIS tested	Guarantees gate resistance consistency and avalanche ruggedness up to I_AS = 60 A and E_AS = 180 mJ
Optimized Q_gd/Q_gs ratio	Reduces Miller-induced switching delay and improves controllability during hard commutation events
Low V_SD body diode	V_SD = 0.71 V (typ.) at I_S = 5 A - lowers reverse-conduction loss in OR-ing and bidirectional power paths

Applications

Synchronous Buck Converter	OR-ing Circuit
Use Scenario: High-efficiency 48 V–12 V step-down converter in server VRMs and telecom power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to eliminate forward voltage drop. Use Value: Reduces conduction loss by >60 % vs. 0.45 V Schottky, enabling >95 % efficiency at 60 A output.	Use Scenario: Redundant 12 V power supply inputs in industrial PLCs with automatic fault isolation. IC Role / Device Role / Timing Role: Active OR-ing switch controlling current flow direction based on input voltage priority. Use Value: Eliminates 0.3–0.5 V diode drop, improving system efficiency and thermal margin during hot-swap events.
High-Density DC/DC Module	Battery Management System
Use Scenario: Compact 100 A, 36 mm × 36 mm isolated DC/DC module for AI accelerator cards. IC Role / Device Role / Timing Role: Primary-side high-side switch and secondary-side synchronous rectifier in LLC topology. Use Value: Dual-role capability enabled by low R_DS(on) and robust UIS rating supports compact, air-cooled designs.	Use Scenario: Cell-balancing and pack protection circuitry in 48 V Li-ion battery packs for energy storage. IC Role / Device Role / Timing Role: Load switch isolating battery cells during charging/discharging cycles and fault conditions. Use Value: 100 A rating and 25 V V_DS support high-current cell bypass with <0.1 V dropout at full load.

Synchronous Buck Converter

OR-ing Circuit

Use Scenario: High-efficiency 48 V–12 V step-down converter in server VRMs and telecom power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to eliminate forward voltage drop.

Use Value: Reduces conduction loss by >60 % vs. 0.45 V Schottky, enabling >95 % efficiency at 60 A output.

Use Scenario: Redundant 12 V power supply inputs in industrial PLCs with automatic fault isolation.

IC Role / Device Role / Timing Role: Active OR-ing switch controlling current flow direction based on input voltage priority.

Use Value: Eliminates 0.3–0.5 V diode drop, improving system efficiency and thermal margin during hot-swap events.

High-Density DC/DC Module

Battery Management System

Use Scenario: Compact 100 A, 36 mm × 36 mm isolated DC/DC module for AI accelerator cards.

IC Role / Device Role / Timing Role: Primary-side high-side switch and secondary-side synchronous rectifier in LLC topology.

Use Value: Dual-role capability enabled by low R_DS(on) and robust UIS rating supports compact, air-cooled designs.

Use Scenario: Cell-balancing and pack protection circuitry in 48 V Li-ion battery packs for energy storage.

IC Role / Device Role / Timing Role: Load switch isolating battery cells during charging/discharging cycles and fault conditions.

Use Value: 100 A rating and 25 V V_DS support high-current cell bypass with <0.1 V dropout at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR220DP-T1-RE3	Same die, identical R_DS(on), Q_g, and thermal specs; differs only in tape-and-reel packaging marking (GE3 vs RE3)	No functional difference - fully interchangeable in all circuits and layouts	Select SiR220DP-T1-RE3 when sourcing from distributors with GE3-labeled reels; no design or layout change required
IRF6642TRPBF	Higher R_DS(on) (0.0012 Ω @ 10 V), larger Q_g (72 nC), and no top-side cooling - uses standard SO-8 package	Limited to lower-power applications (<60 A) due to higher conduction loss and inferior thermal resistance (R_thJC = 2.5 °C/W)	Choose IRF6642TRPBF only if legacy board layout mandates SO-8 footprint and thermal requirements are relaxed

Compared with SiR220DP-T1-RE3, SIDR220DP-T1-RE3 offers identical silicon performance but with Vishay's updated RE3 tape-and-reel compliance labeling; versus IRF6642TRPBF, it delivers 52 % lower R_DS(on), 15 % lower Q_g, and 3× better thermal resistance - enabling higher current density and smaller heatsinks.

Availability

SIDR220DP-T1-RE3 is available at Aetrix Electronics and suitable for high-current synchronous rectification, OR-ing, and battery load switching applications requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIDR220DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIDR220DP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8DC family, engineered specifically for high-current, high-frequency DC/DC conversion where low R_DS(on), fast switching, and dual-surface thermal management are critical.

FAQ

What is the maximum continuous drain current rating for SIDR220DP-T1-RE3?

The SIDR220DP-T1-RE3 is rated for 100 A continuous drain current at case temperature T_C = 25 °C, derating to 70.2 A at T_C = 70 °C. This rating assumes proper PCB copper area and thermal vias per Vishay's recommended layout for the PowerPAK® SO-8DC package. The 100 A value reflects package-limited conduction capability, not silicon limitation.

Does SIDR220DP-T1-RE3 support logic-level gate drive?

Yes, SIDR220DP-T1-RE3 supports logic-level gate drive with guaranteed R_DS(on) ≤ 0.00082 Ω at V_GS = 4.5 V. Its gate threshold voltage range of 1.0–2.1 V ensures reliable turn-on with standard 3.3 V or 5 V PWM controllers, while maintaining sufficient noise margin to prevent spurious conduction.

How does the top-side cooling feature of SIDR220DP-T1-RE3 improve thermal performance?

The top-side cooling feature of SIDR220DP-T1-RE3 allows direct thermal interface to a heatsink or thermal pad on the device's upper surface, supplementing bottom-side conduction through the PCB. This dual-path configuration reduces effective R_thJA and enables >20 % higher power handling in constrained spaces compared to standard SO-8 devices - confirmed by Vishay's thermal characterization on 1" × 1" FR4 boards.

Is SIDR220DP-T1-RE3 suitable for synchronous rectification in 48 V input converters?

Yes, SIDR220DP-T1-RE3 is explicitly qualified for synchronous rectification in 48 V input converters operating down to 5 V outputs. Its 25 V V_DS rating provides adequate margin against voltage spikes in well-damped buck or LLC topologies, and its low Q_gd/Q_gs ratio ensures clean turn-off even under high dv/dt conditions typical in high-frequency designs.

What is the body diode reverse recovery performance of SIDR220DP-T1-RE3?

The SIDR220DP-T1-RE3 body diode exhibits t_rr = 63 ns (typ.) and Q_rr = 87 nC (typ.) at I_F = 20 A, di/dt = 100 A/μs, and T_J = 25 °C. These values enable efficient operation in discontinuous conduction mode (DCM) and quasi-resonant topologies where reverse recovery loss dominates, outperforming standard trench MOSFETs by >30 % in Q_rr.

SIDR220DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 87.7A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 200 nC @ 10 V

Vgs (Max):: +16V, -12V

Input Capacitance (Ciss) (Max) @ Vds:: 10850 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8DC

SIDR220DP-T1-RE3 FAQ

1.How can I place an order for SIDR220DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDR220DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDR220DP-T1-RE3 reliable?

The price and inventory of SIDR220DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR220DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIDR220DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR220DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDR220DP-T1-RE3?

SIDR220DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDR220DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDR220DP-T1-RE3?

For technical support, including SIDR220DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR220DP-T1-RE3 requirements.

6.How does Aetrix verify that SIDR220DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIDR220DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR220DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIDR220DP-T1-RE3?

All SIDR220DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR220DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDR220DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIDR220DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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