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Vishay Siliconix SIDR220EP-T1-RE3
- Part No.:
- SIDR220EP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIDR220EP-T1-RE3.pdf
- Description:
- N-CHANNEL 25 V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:5,988
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Product details
Overview
SIDR220EP-T1-RE3 from Vishay Siliconix is an N-channel 25 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8DC package, rated for 415 A continuous drain current at TC = 25 °C, with RDS(on) of 0.58 mΩ at VGS = 10 V and 0.82 mΩ at VGS = 4.5 V, optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SIDR220EP-T1-RE3 datasheet, SIDR220EP-T1-RE3 pinout, SIDR220EP-T1-RE3 application, or SIDR220EP-T1-RE3 equivalent, this device supports high-power-density buck converters, OR-ing circuits, and battery management systems requiring low conduction loss, top-side cooling capability, and 175 °C junction temperature operation.
Technical Context
This MOSFET employs trench-based silicon architecture with optimized gate charge profile (Qg = 61 nC typ. at VGS = 4.5 V, Qgd = 9.2 nC) to minimize switching losses in hard-switched and synchronous rectifier topologies. Its dual-side thermal design enables heat extraction from both top copper paddle and bottom source terminals.
The device features 100 % Rg and UIS tested reliability, with body diode parameters including VSD = 0.71 V (typ.) at IS = 5 A and trr = 63 ns (typ.), supporting fast-recovery requirements in high-frequency synchronous rectification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum drain-source blocking voltage for 24 V input rail applications |
| RDS(on) max @ VGS = 10 V | 0.58 mΩ - Enables <1 W conduction loss at 40 A, critical for high-current power stages |
| RDS(on) max @ VGS = 4.5 V | 0.82 mΩ - Ensures robust on-state performance with 5 V gate drive in logic-level systems |
| ID (TC = 25 °C) | 415 A - Supports single-device implementation in >1 kW VRMs without paralleling |
| Qg typ. @ VGS = 4.5 V | 61 nC - Low gate charge reduces driver power demand and switching transition time |
| TJ range | –55 °C to +175 °C - Rated for under-hood automotive and industrial environments |
| RthJC (drain) | 0.8 °C/W (typ.) - Enables direct heatsink mounting to drain paddle for efficient thermal path |
Pinout & Package
PowerPAK® SO-8DC is a leadless, double-cooling surface-mount package with exposed drain paddle on bottom and exposed source paddle on top. Dimensions: 6.15 mm × 5.15 mm × 0.56 mm (L × W × H), with 8 terminals arranged in two rows.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 | Source (S) | Top-side exposed copper paddle - primary thermal path for top-side cooling |
| 4 | Gate (G) | Standard MOSFET control terminal; requires ≤16 V drive, ESD-protected |
| 5, 6, 7 | Drain (D) | Bottom-side exposed copper paddle - main thermal and current path to PCB/heatsink |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers lowest RDS(on) × Qg figure-of-merit among 25 V discrete MOSFETs for minimal switching + conduction loss trade-off |
| Top-side cooling structure | Enables dual thermal interface: top source paddle for auxiliary heatsinking and bottom drain paddle for primary PCB conduction |
| Optimized Qgd/Qgs ratio | Reduces Miller-induced switching delay and dv/dt-induced turn-on risk in high-speed synchronous rectifiers |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and ruggedness against unclamped inductive switching stress |
Applications
| High-Frequency Synchronous Buck Converter | Synchronous Rectification in Isolated DC/DC |
|---|---|
Use Scenario: Primary-side high-side switch and secondary-side low-side rectifier in 48 V → 12 V/50 A telecom VRM operating at 500 kHz. IC Role / Device Role / Timing Role: Low-side power MOSFET performing synchronous rectification with precise gate timing controlled by dedicated controller IC. Use Value: 0.58 mΩ RDS(on) cuts conduction loss by >40 % vs. Schottky diodes, enabling >96 % efficiency at full load. | Use Scenario: Secondary-side rectifier in 400 V → 12 V LLC resonant converter for server PSUs. IC Role / Device Role / Timing Role: High-current, low-VDS rectifier replacing diode bridge; driven synchronously with transformer secondary waveform. Use Value: 175 °C TJ rating and top-side cooling allow sustained 415 A peak current without derating in constrained airflow environments. |
| OR-ing Circuit for Redundant Power Supplies | Battery Protection and Load Switching |
Use Scenario: Back-to-back configuration in 12 V redundant power system for data center rack PDUs. IC Role / Device Role / Timing Role: Bidirectional load switch managing current flow direction based on supply priority and fault status. Use Value: Ultra-low RDS(on) minimizes forward voltage drop (<6 mV at 10 A), reducing power loss and thermal rise during normal operation. | Use Scenario: Main discharge FET in 3-cell Li-ion battery pack (12.6 V max) with 100 A peak load requirement. IC Role / Device Role / Timing Role: High-current load switch enabling/disabling battery output under MCU supervision with overcurrent protection. Use Value: 0.82 mΩ RDS(on) at 4.5 V gate drive ensures compatibility with standard battery monitor ICs and eliminates need for level-shifting gate drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 25 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SIDR210EP-T1-RE3 | RDS(on) = 0.43 mΩ @ 10 V (lower), ID = 480 A, Qg = 69 nC - higher conduction efficiency but increased gate drive demand | Better suited for ultra-high-efficiency VRMs where gate drive capability supports 69 nC charge | Select when minimizing conduction loss dominates over gate drive loss and layout space permits same footprint |
| SISS16DN-T1-GE3 | RDS(on) = 0.72 mΩ @ 10 V, ID = 320 A, PowerPAK® 1212-8 package - smaller footprint, lower current rating, no top-side cooling | Ideal for space-constrained mid-power designs where thermal headroom allows reduced current rating | Choose when board area is limited and peak current stays below 320 A; lacks top-side thermal path |
Compared with SIDR210EP-T1-RE3 and SISS16DN-T1-GE3, the SIDR220EP-T1-RE3 delivers optimal balance of 415 A current handling, 0.58 mΩ conduction resistance, and dual-side thermal management - making it preferred for thermally demanding, high-current synchronous rectification where top-side cooling is implemented.
Availability
SIDR220EP-T1-RE3 is available at Aetrix Electronics and suitable for high-power-density DC/DC converters, OR-ing circuits, and battery management systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIDR220EP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The PowerPAK® SO-8DC product line was developed to address thermal bottlenecks in high-current power conversion, delivering double-sided cooling and industry-leading RDS(on) × Qg performance for synchronous rectification and load switching.
FAQ
What is the maximum continuous drain current rating for SIDR220EP-T1-RE3 at case temperature of 70 °C?
The SIDR220EP-T1-RE3 supports 347 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under steady-state conduction, and the device maintains its 0.58 mΩ RDS(on) at VGS = 10 V across this operating range. Designers must ensure adequate heatsinking to sustain this current without exceeding the 175 °C maximum junction temperature.
Does SIDR220EP-T1-RE3 support 4.5 V gate drive for full enhancement?
Yes, the SIDR220EP-T1-RE3 is fully characterized at VGS = 4.5 V, with RDS(on) max of 0.82 mΩ and guaranteed operation down to VGS(th) = 1.0 V (min). Its TrenchFET® Gen IV process ensures strong channel formation at logic-level gate voltages, making it compatible with standard 5 V microcontrollers and PWM controllers without external level shifting.
How does the top-side cooling feature of SIDR220EP-T1-RE3 improve thermal performance?
The SIDR220EP-T1-RE3 uses a PowerPAK® SO-8DC package with an exposed top-side source paddle that provides an additional thermal conduction path to a heatsink or thermal pad. This dual-path design reduces effective RthJA by up to 30 % compared to standard SO-8 packages, allowing higher sustained current in thermally constrained layouts where bottom-side cooling alone is insufficient.
Is SIDR220EP-T1-RE3 suitable for avalanche energy handling in inductive switching applications?
Yes, the SIDR220EP-T1-RE3 is rated for 180 mJ single-pulse avalanche energy (EAS) and 60 A single-pulse avalanche current (IAS) with L = 0.1 mH. These values are validated per JEDEC standards and confirm ruggedness in unclamped inductive switching events - such as those occurring during MOSFET turn-off in non-synchronous buck or flyback converters - without degradation.
What is the gate resistance specification for SIDR220EP-T1-RE3 and why does it matter?
The SIDR220EP-T1-RE3 has a typical gate resistance (Rg) of 0.38 Ω, measured at 1 MHz. This low internal Rg minimizes gate loop oscillation and improves switching controllability, especially in high-di/dt applications. It also reduces gate driver power dissipation and enables faster, more predictable turn-on/turn-off transitions - critical for optimizing efficiency in >300 kHz synchronous rectifiers.
SIDR220EP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 92.8A (Ta), 415A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.58mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 200 nC @ 10 V
- Vgs (Max):
- +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 10850 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.25W (Ta), 415W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8DC
SIDR220EP-T1-RE3 FAQ
1.How can I place an order for SIDR220EP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDR220EP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDR220EP-T1-RE3 reliable?
The price and inventory of SIDR220EP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR220EP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIDR220EP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR220EP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDR220EP-T1-RE3?
SIDR220EP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDR220EP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDR220EP-T1-RE3?
For technical support, including SIDR220EP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR220EP-T1-RE3 requirements.
6.How does Aetrix verify that SIDR220EP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIDR220EP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR220EP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIDR220EP-T1-RE3?
All SIDR220EP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR220EP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDR220EP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIDR220EP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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