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Vishay Siliconix SIDR390DP-T1-RE3
- Part No.:
- SIDR390DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIDR390DP-T1-RE3.pdf
- Description:
- MOSFET N-CH 30V 69.9A/100A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:11
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Product details
Overview
SIDR390DP-T1-RE3 from Vishay Siliconix is an N-channel 30 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8DC package, delivering RDS(on) = 0.80 mΩ at VGS = 10 V and 1.15 mΩ at VGS = 4.5 V, with 48 nC typical total gate charge and 100 A continuous drain current (TC = 25 °C), optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SIDR390DP-T1-RE3 datasheet, SIDR390DP-T1-RE3 pinout, SIDR390DP-T1-RE3 application, or SIDR390DP-T1-RE3 equivalent, this device is selected for low conduction loss, fast switching in high-frequency buck topologies, thermal performance via top-side cooling, and robust UIS-rated operation in battery management and OR-ing circuits.
Technical Context
This MOSFET employs TrenchFET® Gen IV process technology to achieve ultra-low RDS(on) and optimized Qgd/Qgs ratio (0.031–0.062), reducing switching losses in hard-switched and synchronous rectifier applications. Its top-side cooling design enables direct thermal interface to heatsinks or PCB copper planes.
The device features 100% Rg and UIS testing, with a body diode exhibiting trr = 68 ns (typ.) and Qrr = 98 nC (typ.) at IF = 20 A, supporting efficient reverse recovery in high-frequency synchronous buck stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V and 24 V input systems |
| RDS(on) @ 10 V | 0.80 mΩ max - Enables <1 W conduction loss at 100 A, critical for high-current power stages |
| RDS(on) @ 4.5 V | 1.15 mΩ max - Ensures strong enhancement-mode turn-on with 5 V gate drive in logic-level designs |
| Qg typ. | 48 nC - Low gate charge supports efficient 500 kHz–1 MHz switching without excessive driver loss |
| ID cont. (TC = 25 °C) | 100 A - Sustains full-load current in compact, thermally managed DC/DC modules |
| RthJC (drain) | 0.8 °C/W typ. - Enables >100 W power dissipation with minimal junction-to-case temperature rise |
| VGS(th) | 0.8–2.0 V - Tight threshold range ensures predictable turn-on across temperature and production lot |
Pinout & Package
Package: PowerPAK® SO-8DC - leadless, double-sided cooling package with exposed drain paddle on bottom and source terminals on top surface; 5.00 mm × 6.00 mm footprint, 0.56 mm height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 | Drain (D) | Five parallel drain connections tied to exposed bottom paddle - primary thermal and current path to PCB heatsink |
| 4 | Gate (G) | Single gate terminal - low Rg (0.5–2.5 Ω) minimizes gate ringing and EMI in fast-switching layouts |
| 5, 6 | Source (S) | Two top-side source terminals - enable Kelvin sensing and reduce source inductance in high-di/dt applications |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers industry-leading RDS(on) × Qg figure-of-merit for reduced switching + conduction loss trade-off |
| Top-side cooling capability | Enables thermal interface to secondary heatsink or thermal pad above component, increasing total heat extraction |
| 100% Rg and UIS tested | Guarantees gate resistance consistency and ruggedness against unclamped inductive switching stress |
| Optimized Qgd/Qgs ratio | 0.031–0.062 reduces Miller plateau duration and improves dv/dt immunity in high-side configurations |
| Low body diode VSD | 0.68 V (typ.) at 10 A - lowers forward conduction loss during dead-time in synchronous rectifiers |
Applications
| Synchronous Buck Converter | OR-ing Circuit |
|---|---|
|
Use Scenario: Primary high-side switch in 48 V → 12 V isolated DC/DC module operating at 600 kHz. IC Role / Device Role / Timing Role: High-current, low-RDS(on) power switch handling 80 A peak load with minimal conduction loss. Use Value: 0.80 mΩ RDS(on) limits I²R loss to <0.5 W at 80 A, enabling >97% efficiency at full load. |
Use Scenario: Back-to-back configuration in redundant 28 V avionics power bus for fault isolation. IC Role / Device Role / Timing Role: Bidirectional load switch enforcing unidirectional current flow and blocking reverse faults. Use Value: 100 A continuous rating and 40 A single-pulse avalanche current support system-level fault ride-through. |
| Synchronous Rectifier | Battery Management System |
|
Use Scenario: Secondary-side switch in 12 V output stage of LLC resonant converter for server PSU. IC Role / Device Role / Timing Role: Low-VGS(th), fast-recovery body diode MOSFET replacing Schottky rectifier. Use Value: 68 ns trr and 98 nC Qrr minimize reverse recovery loss, improving light-load efficiency by 1.2%. |
Use Scenario: Cell-balancing and pack protection switch in 16-cell Li-ion battery string (48–67.2 V). IC Role / Device Role / Timing Role: High-current, low-loss main discharge path with integrated overcurrent detection interface. Use Value: 30 V VDS margin accommodates transient spikes up to 36 V while maintaining safe SOA operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR626DP-T1-RE3 | RDS(on) = 0.95 mΩ @ 10 V; Qg = 42 nC; same PowerPAK SO-8DC package | Lower gate charge improves switching efficiency but higher RDS(on) increases conduction loss above 60 A | Select when prioritizing 1 MHz+ switching over sub-1 mΩ conduction loss |
| IRLHS6342TRPBF | RDS(on) = 1.25 mΩ @ 4.5 V; Qg = 37 nC; SO-8 package (not leadless) | Higher RDS(on) and conventional SO-8 limit thermal performance; no top-side cooling | Choose only for legacy SO-8 board compatibility where thermal headroom exceeds 25 °C/W |
Compared with SiR626DP-T1-RE3 and IRLHS6342TRPBF, SIDR390DP-T1-RE3 offers the lowest RDS(on) in its class-critical for 100 A applications-while retaining Gen IV switching efficiency and dual-surface thermal capability not available in standard SO-8 alternatives.
Availability
SIDR390DP-T1-RE3 is available at Aetrix Electronics and suitable for synchronous buck converters, OR-ing circuits, battery management systems, high-density DC/DC modules, and industrial motor drives requiring stable component supply and long-term manufacturability.
Supply support for SIDR390DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
SIDR390DP-T1-RE3 belongs to the TrenchFET® Gen IV PowerPAK® SO-8DC family, engineered specifically for high-current, high-frequency power conversion in space-constrained industrial and computing applications.
FAQ
What is the maximum continuous drain current rating for SIDR390DP-T1-RE3 at TC = 70 °C?
The SIDR390DP-T1-RE3 supports 100 A continuous drain current at TC = 70 °C per Vishay's Absolute Maximum Ratings table. This rating reflects sustained operation under active heatsinking conditions and is validated by 100% UIS testing to ensure ruggedness under real-world thermal transients.
Does SIDR390DP-T1-RE3 support logic-level gate drive?
Yes, SIDR390DP-T1-RE3 is fully logic-level compatible: its VGS(th) range is 0.8–2.0 V, and it achieves RDS(on) = 1.15 mΩ max at VGS = 4.5 V. This allows direct interfacing with 3.3 V or 5 V microcontrollers and gate drivers without level-shifting circuitry.
How does the top-side cooling feature of SIDR390DP-T1-RE3 improve thermal performance?
The top-side cooling feature of SIDR390DP-T1-RE3 provides an additional thermal path via exposed source metal on the package top surface. When mounted with thermal interface material to a secondary heatsink, it reduces effective RthJA beyond the standard bottom-side-only path, enabling higher power density in constrained layouts where PCB copper area is limited.
Is SIDR390DP-T1-RE3 suitable for synchronous rectification in high-frequency LLC converters?
Yes, SIDR390DP-T1-RE3 is well-suited for synchronous rectification in high-frequency LLC converters due to its low Qg (48 nC typ.), fast switching times (td(off) = 46 ns typ. at 10 V), and low body diode Qrr (98 nC typ.). These parameters minimize both switching loss and reverse recovery loss at frequencies up to 1 MHz.
What is the avalanche energy rating for SIDR390DP-T1-RE3, and how is it tested?
SIDR390DP-T1-RE3 is rated for 80 mJ single-pulse avalanche energy (EAS) with 40 A single-pulse avalanche current (IAS). It undergoes 100% Unclamped Inductive Switching (UIS) testing per JEDEC standards, ensuring robustness against inductive turn-off transients in real-world power stage designs.
SIDR390DP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 69.9A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 153 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 10180 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.25W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8DC
SIDR390DP-T1-RE3 FAQ
1.How can I place an order for SIDR390DP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDR390DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDR390DP-T1-RE3 reliable?
The price and inventory of SIDR390DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR390DP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIDR390DP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR390DP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDR390DP-T1-RE3?
SIDR390DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDR390DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDR390DP-T1-RE3?
For technical support, including SIDR390DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR390DP-T1-RE3 requirements.
6.How does Aetrix verify that SIDR390DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIDR390DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR390DP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIDR390DP-T1-RE3?
All SIDR390DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR390DP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDR390DP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIDR390DP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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