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Vishay Siliconix SIDR392DP-T1-RE3
- Part No.:
- SIDR392DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIDR392DP-T1-RE3.pdf
- Description:
- N-CHANNEL 30-V (D-S) MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:3,170
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Product details
Overview
SIDR392DP-T1-RE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8DC package, rated for 100 A continuous drain current at TC = 25 °C, with RDS(on) of 0.62 mΩ at VGS = 10 V and 0.93 mΩ at VGS = 4.5 V, optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SIDR392DP-T1-RE3 datasheet, SIDR392DP-T1-RE3 pinout, SIDR392DP-T1-RE3 application, or SIDR392DP-T1-RE3 equivalent, key selection criteria include its top-side cooling capability, low gate charge (59.7 nC at 4.5 V), 100% Rg and UIS tested reliability, and suitability for high-power-density buck converters and OR-ing circuits requiring minimal conduction and switching loss.
Technical Context
This MOSFET employs a trench-based silicon structure enabling ultra-low on-resistance and optimized charge ratios (Qgd/Qgs), directly reducing switching energy loss in hard-switched and synchronous rectifier topologies. Its dual-cooling design-exposed drain pad on bottom and source terminals on top-enables simultaneous thermal paths to PCB and heatsink.
The device features guaranteed 100% gate resistance (Rg) screening and unclamped inductive switching (UIS) testing per JEDEC JESD22-A110, ensuring robustness under transient overcurrent conditions. Body diode recovery parameters (trr = 80 ns typ., Qrr = 144 nC) are characterized for use in synchronous rectification where reverse recovery behavior impacts efficiency and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 30 V - Supports input rails up to 24 V nominal in industrial and telecom DC/DC systems |
| RDS(on) @ 10 V | 0.62 mΩ max - Enables <1 W conduction loss at 40 A, critical for >95% efficiency in 48 V–12 V buck stages |
| RDS(on) @ 4.5 V | 0.93 mΩ max - Ensures stable operation with 5 V gate drive from standard controllers without level-shifting |
| Total Gate Charge | 59.7 nC typ. at 4.5 V - Reduces driver power requirement and enables faster turn-on in high-frequency (>1 MHz) converters |
| Continuous ID | 100 A at TC = 25 °C - Validated for sustained operation with external heatsinking on drain pad |
| Junction-to-Case RthJC | 0.8 °C/W max (drain) - Confirms effective thermal coupling from die to PCB copper or heatsink via exposed drain |
| Body Diode VSD | 0.7 V typ. at IS = 5 A - Low forward drop minimizes reverse conduction loss during dead-time in synchronous rectifiers |
Pinout & Package
Package: PowerPAK® SO-8DC - leadless, double-cooling surface-mount package with exposed drain pad (bottom) and top-side source terminals for parallel thermal path design.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 7, 8 (Drain) | Drain connection (common to exposed pad) | Primary current path and main thermal interface; must be soldered to large copper area for heat dissipation |
| 4 (Gate) | Control terminal | High-impedance input requiring low-inductance gate loop layout to minimize ringing and switching loss |
| 5, 6 (Source) | Source reference and return path | Top-side source terminals enable Kelvin sensing and reduce source inductance in high-di/dt applications |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers industry-leading RDS(on) × Qg figure-of-merit (0.62 mΩ × 59.7 nC = 37 nΩ·nC), minimizing combined conduction and switching loss |
| Top-side cooling architecture | Enables thermal management via both top (source terminals) and bottom (exposed drain), supporting >125 W power handling with proper board layout |
| Optimized Qgd/Qgs ratio | Reduces Miller plateau duration and dv/dt-induced false turn-on risk in high-side configurations |
| 100% Rg and UIS tested | Ensures gate robustness against oscillation and survivability under inductive load transients without external snubbing |
Applications
| Synchronous Buck Converter | Synchronous Rectification |
|---|---|
Use Scenario: Primary switch in 48 V to 12 V isolated or non-isolated DC/DC converter for server VRMs. IC Role / Device Role / Timing Role: High-side N-channel MOSFET operating at 300–600 kHz with 10 V gate drive. Use Value: 0.62 mΩ RDS(on) limits conduction loss to <1.0 W at 40 A, enabling >96% peak efficiency while maintaining thermal margin. | Use Scenario: Secondary-side rectifier in LLC resonant converter for telecom power supplies. IC Role / Device Role / Timing Role: Synchronously gated low-side switch replacing Schottky diode in 12 V output stage. Use Value: 0.7 V body diode forward voltage and fast 80 ns trr reduce reverse recovery loss and EMI vs. discrete diodes. |
| OR-ing Circuit | Battery Management System |
Use Scenario: Back-to-back configuration in redundant 24 V power distribution for industrial PLCs. IC Role / Device Role / Timing Role: Low-loss ideal diode replacement with bidirectional current control. Use Value: Sub-1 mΩ on-resistance ensures <25 mV forward drop at 25 A, minimizing voltage sag and heat generation during hot-swap events. | Use Scenario: Cell-balancing or protection FET in 16-cell Li-ion battery pack (48–67 V system). IC Role / Device Role / Timing Role: High-current load switch isolating battery stack from charger/load during fault conditions. Use Value: 100 A rating and 101 mJ single-pulse avalanche energy support safe interruption of >50 A fault currents without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR626DP-T1-RE3 | Same PowerPAK SO-8DC package; higher RDS(on) = 0.83 mΩ @ 10 V; lower Qg = 45.5 nC | Better suited for gate-drive-limited, lower-current (<70 A) applications where switching loss dominates | Select when prioritizing lower gate drive loss over minimum conduction loss |
| IRLHS6342TRPBF | Different package (PowerPAIR 3.3×3.3); RDS(on) = 0.75 mΩ @ 4.5 V; Qg = 42 nC; no top-side cooling | Limited to single-sided cooling; requires more aggressive PCB copper for equivalent thermal performance | Choose for space-constrained layouts where footprint size is critical and thermal budget allows |
Compared with SiR626DP-T1-RE3 and IRLHS6342TRPBF, the SIDR392DP-T1-RE3 delivers the lowest RDS(on) in its class for maximum conduction efficiency at high current, while retaining strong switching performance and unique dual-cooling capability essential for thermally dense power modules.
Availability
SIDR392DP-T1-RE3 is available at Aetrix Electronics and suitable for synchronous buck converters, OR-ing circuits, battery management systems, and high-power-density DC/DC applications requiring stable component supply and long-term production continuity.
Supply support for SIDR392DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The TrenchFET® Gen IV product line, including SIDR392DP-T1-RE3, was engineered specifically for next-generation power conversion systems demanding ultra-low RDS(on), minimized switching loss, and enhanced thermal performance in compact form factors.
FAQ
What is the maximum continuous drain current rating for SIDR392DP-T1-RE3 under real-world PCB conditions?
The SIDR392DP-T1-RE3 is rated for 100 A continuous drain current at TC = 25 °C, meaning case temperature must be maintained at 25 °C-typically achieved using ≥10 cm² of 2-oz copper connected to the exposed drain pad. On a standard 1" × 1" FR4 board, derating applies: 82 A at TA = 25 °C and 66 A at TA = 70 °C per datasheet note b and c. Thermal design must prioritize bottom-side heatsinking due to the PowerPAK SO-8DC's exposed drain construction.
Does SIDR392DP-T1-RE3 support 5 V gate drive in synchronous rectifier applications?
Yes, SIDR392DP-T1-RE3 is fully specified for 4.5 V gate drive, with RDS(on) = 0.93 mΩ max at VGS = 4.5 V and ID = 15 A. Its gate threshold voltage (VGS(th)) ranges from 1.0 V to 2.2 V, ensuring reliable enhancement-mode turn-on with standard 5 V controllers. The low Qg (59.7 nC typ.) further reduces gate drive power requirements, making it suitable for self-driven synchronous rectification schemes without external level shifters.
How does the top-side cooling feature of SIDR392DP-T1-RE3 improve thermal performance?
The top-side cooling feature of SIDR392DP-T1-RE3 refers to its layout of source terminals (pins 5 and 6) on the top surface, enabling direct thermal coupling to a heatsink or thermal pad above the PCB. Combined with the bottom-exposed drain pad, this dual-path architecture reduces total thermal resistance-especially junction-to-ambient-by distributing heat across two physical interfaces. In practice, this allows >20% higher power handling compared to conventional SO-8 packages under identical board constraints.
Is SIDR392DP-T1-RE3 suitable for avalanche-rated applications such as inductive load switching?
Yes, SIDR392DP-T1-RE3 is 100% tested for Unclamped Inductive Switching (UIS) per JEDEC JESD22-A110 and rated for single-pulse avalanche energy (EAS) of 101 mJ with IAS = 45 A (L = 0.1 mH). This makes it appropriate for applications involving relay driving, solenoid control, or motor gate driving where inductive kickback must be safely absorbed without external clamping components-provided operating conditions stay within the published Safe Operating Area curves.
What is the body diode reverse recovery performance of SIDR392DP-T1-RE3, and why does it matter in synchronous rectification?
The SIDR392DP-T1-RE3 body diode exhibits trr = 80 ns typ. and Qrr = 144 nC at IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C. In synchronous rectification, low Qrr minimizes stored charge that must be removed during turn-on, reducing switching loss and voltage overshoot. This parameter directly impacts efficiency and EMI in high-frequency converters-especially during light-load discontinuous conduction mode-where body diode conduction occurs before synchronous gate drive resumes.
SIDR392DP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 82A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.62mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 188 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 9530 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.25W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8DC
SIDR392DP-T1-RE3 FAQ
1.How can I place an order for SIDR392DP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDR392DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDR392DP-T1-RE3 reliable?
The price and inventory of SIDR392DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR392DP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIDR392DP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR392DP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDR392DP-T1-RE3?
SIDR392DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDR392DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDR392DP-T1-RE3?
For technical support, including SIDR392DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR392DP-T1-RE3 requirements.
6.How does Aetrix verify that SIDR392DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIDR392DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR392DP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIDR392DP-T1-RE3?
All SIDR392DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR392DP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDR392DP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIDR392DP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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