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Vishay Siliconix SIDR402EP-T1-RE3
- Part No.:
- SIDR402EP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIDR402EP-T1-RE3.pdf
- Description:
- N-CHANNEL 40 V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:5,930
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Product details
Overview
SIDR402EP-T1-RE3 from Vishay Siliconix is an N-channel 40 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8DC package, rated for 291 A continuous drain current at TC = 25 °C, with RDS(on) of 0.00088 Ω at VGS = 10 V and 0.00116 Ω at VGS = 4.5 V, optimized for high-efficiency synchronous rectification in server VRMs and high-density DC/DC converters.
For engineers reviewing the SIDR402EP-T1-RE3 datasheet, SIDR402EP-T1-RE3 pinout, SIDR402EP-T1-RE3 application, or SIDR402EP-T1-RE3 equivalent, key selection criteria include its top-side cooling capability, 175 °C junction temperature rating, ultra-low RDS(on)–Qg and RDS(on)–Qoss figures-of-merit, and 100 % Rg and UIS testing for robustness in high-current switching circuits.
Technical Context
This MOSFET employs a trench-based silicon structure enabling sub-mΩ on-resistance with fast switching dynamics: Qg is 53 nC (typ.) at VGS = 4.5 V and 110 nC (typ.) at VGS = 10 V, while Crss/Ciss ratio is tightly controlled at 0.024–0.048 to minimize Miller-induced turn-off delay. Its gate threshold voltage (VGS(th)) ranges from 1.1 V to 2.3 V, supporting both 4.5 V and 10 V drive systems.
Thermally, it features dual thermal paths-junction-to-case (drain) RthJC = 0.8 °C/W (typ.) and junction-to-source RthJC = 1.1 °C/W (typ.)-and supports top-side cooling via exposed copper on the package backside, enabling integration into thermally constrained, double-sided PCB layouts without requiring through-hole heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 40 V - Supports 12 V and 48 V input bus architectures with margin for transient spikes |
| RDS(on) @ 10 V | 0.00088 Ω - Delivers <0.35 W conduction loss at 20 A, critical for >98 % efficiency in high-current POL stages |
| RDS(on) @ 4.5 V | 0.00116 Ω - Enables direct drive from standard 5 V controllers without level-shifting |
| Qg @ 4.5 V | 53 nC - Low gate charge reduces driver power demand and enables >1 MHz switching in resonant topologies |
| ID cont. @ TC=25°C | 291 A - Allows single-device implementation in 300 A+ output rails, reducing component count |
| TJ max | +175 °C - Rated for operation in sealed, high-ambient environments such as telecom rectifiers and industrial motor drives |
| RthJC (drain) | 0.8 °C/W (typ.) - Enables direct mounting to copper heatsink or thermal pad for high-power dissipation |
Pinout & Package
Package: PowerPAK® SO-8DC - leadless, surface-mount, top-side cooling enabled by exposed copper drain paddle on bottom side; dimensions 6.15 mm × 5.15 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 | Source (S) | Four parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt applications |
| 4 | Gate (G) | Single low-inductance gate connection optimized for fast edge rates and minimal ringing |
| 5, 6, 7, D-Pad | Drain (D) | Multi-terminal drain layout plus large exposed copper paddle maximizes thermal transfer to PCB and heatsink |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Enables 0.00073 Ω RDS(on) typ. at 10 V, achieving best-in-class RDS(on)–Qg FOM for 40 V class |
| Top-side cooling capability | Exposed drain paddle on bottom allows thermal interface to heatsink or thermal plane without requiring vias or solder paste under die |
| 100 % Rg tested | Ensures gate resistance ≤1.5 Ω, guaranteeing consistent switching speed and driver compatibility across production lots |
| 100 % UIS tested | Validates ruggedness against unclamped inductive switching events up to 125 mJ, critical for motor drive and OR-ing fault tolerance |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (doc. 99912) |
Applications
| Synchronous Rectification | OR-ing Circuit |
|---|---|
Use Scenario: Secondary-side switching in isolated 48 V–12 V buck-derived VRMs for AI accelerators and GPU power delivery. IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing Schottky diodes to reduce forward voltage drop and conduction loss. Use Value: Achieves >0.8 % efficiency gain over 40 V Schottky alternatives at 200 A output, directly lowering thermal load on VRM PCB. | Use Scenario: Redundant 12 V power supply inputs in enterprise storage controllers with hot-swap capability. IC Role / Device Role / Timing Role: Low-RDS(on) N-channel MOSFET used in ideal diode configuration with external controller. Use Value: Enables <1.2 mΩ effective forward resistance, cutting power loss by 65 % versus discrete P-channel solutions. |
| High-Power-Density DC/DC | Battery Management System |
Use Scenario: Input-side switch in 3 kW telecom rectifier modules operating at 100 kHz–500 kHz with SiC primary-side switching. IC Role / Device Role / Timing Role: High-current, low-loss load switch controlling bulk input power path before isolation stage. Use Value: Supports 291 A continuous current with <1.7 W conduction loss at full load, enabling 97.5 % system efficiency at 48 V input. | Use Scenario: Cell-balancing and pack-level disconnect in 48 V lithium-ion battery packs for material handling equipment. IC Role / Device Role / Timing Role: Main pack disconnect switch handling bidirectional current during charging and regenerative braking. Use Value: With 175 °C TJ rating and 50 A pulsed avalanche capability, sustains 10 s short-circuit events without failure per UL 1973 requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL40B216TRPBF | RDS(on) = 0.0012 Ω @ 4.5 V; Qg = 72 nC; PowerSO-8 package with lower thermal performance (RthJC = 1.2 °C/W) | Limited to ≤200 A continuous due to higher RDS(on) and inferior thermal resistance | Preferable only where legacy PowerSO-8 footprint compatibility is mandatory and peak current <180 A |
| DMTH4007LPSQ-13 | RDS(on) = 0.00095 Ω @ 4.5 V; Qg = 48 nC; PowerPAK 8x8 with larger footprint (8 mm × 8 mm) and higher cost | Offers better thermal margin but requires PCB redesign; not drop-in compatible | Select when board space permits larger package and junction temperature must stay <150 °C under sustained 250 A load |
Compared with IRL40B216TRPBF and DMTH4007LPSQ-13, SIDR402EP-T1-RE3 delivers the lowest RDS(on)–Qg FOM in a compact 6.15 mm × 5.15 mm footprint, enabling highest power density in space-constrained 48 V intermediate bus converters without sacrificing thermal headroom or avalanche ruggedness.
Availability
SIDR402EP-T1-RE3 is available at Aetrix Electronics and suitable for high-current synchronous rectification, OR-ing, and battery disconnect applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and telecom OEMs.
Supply support for SIDR402EP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal reliability, and automotive-grade qualification.
The PowerPAK SO-8DC product line was engineered specifically for high-current, high-efficiency DC/DC conversion in datacenter, telecom, and industrial power systems-prioritizing ultra-low RDS(on), top-side cooling, and 100 % UIS validation.
FAQ
What is the maximum continuous drain current rating for SIDR402EP-T1-RE3 at case temperature of 70 °C?
SIDR402EP-T1-RE3 is rated for 244 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by junction-to-case resistance and ambient cooling conditions, and remains valid under steady-state operation with proper heatsinking.
Does SIDR402EP-T1-RE3 support gate drive from a standard 5 V microcontroller GPIO without level shifting?
Yes, SIDR402EP-T1-RE3 has guaranteed RDS(on) of 0.00116 Ω at VGS = 4.5 V, and its gate threshold voltage (VGS(th)) is specified from 1.1 V to 2.3 V. This ensures full enhancement and low conduction loss when driven directly from a 5 V logic source, eliminating need for external level shifters in many POL and OR-ing designs.
Is SIDR402EP-T1-RE3 qualified for automotive applications per AEC-Q101?
No, SIDR402EP-T1-RE3 is not AEC-Q101 qualified. It is designed and tested for industrial, telecom, and computing applications, with operating temperature range of –55 °C to +175 °C and 100 % UIS testing-but lacks the extended reliability stress testing and traceability required for automotive qualification.
What is the body diode reverse recovery charge (Qrr) of SIDR402EP-T1-RE3, and why does it matter in synchronous rectification?
SIDR402EP-T1-RE3 has Qrr = 90–180 nC (typ./max) at IF = 20 A, di/dt = 100 A/μs, TJ = 25 °C. In synchronous rectification, low Qrr minimizes voltage overshoot and switching loss during body diode commutation, directly improving efficiency and reducing EMI in high-frequency buck converters.
Can SIDR402EP-T1-RE3 be reworked using a standard soldering iron?
No, manual soldering with a soldering iron is not recommended for SIDR402EP-T1-RE3. As a leadless PowerPAK SO-8DC package, it requires controlled reflow per Vishay's profile (doc. 73257); hand-soldering risks thermal damage, solder joint voiding, and compromised top-side cooling performance due to uneven heating.
SIDR402EP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 65.2A (Ta), 291A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.88mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 165 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 9100 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 7.5W (Ta), 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8DC
SIDR402EP-T1-RE3 FAQ
1.How can I place an order for SIDR402EP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDR402EP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDR402EP-T1-RE3 reliable?
The price and inventory of SIDR402EP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR402EP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIDR402EP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR402EP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDR402EP-T1-RE3?
SIDR402EP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDR402EP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDR402EP-T1-RE3?
For technical support, including SIDR402EP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR402EP-T1-RE3 requirements.
6.How does Aetrix verify that SIDR402EP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIDR402EP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR402EP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIDR402EP-T1-RE3?
All SIDR402EP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR402EP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDR402EP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIDR402EP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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