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Vishay Siliconix SIDR5102EP-T1-RE3
- Part No.:
- SIDR5102EP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIDR5102EP-T1-RE3.pdf
- Description:
- N-CHANNEL 100 V (D-S) 175C MOSFE
- Quantity:
- Payment:
- Shipping:
Inventory:5,833
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Product details
Overview
SIDR5102EP-T1-RE3 from Vishay Siliconix is an N-channel 100 V, 175 °C-rated TrenchFET® Gen V power MOSFET in PowerPAK® SO-8DC package, with RDS(on) = 4.1 mΩ @ VGS = 10 V, Qg = 25.1 nC (typ.), and 126 A continuous drain current at TC = 25 °C - optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.
For engineers reviewing the SIDR5102EP-T1-RE3 datasheet, SIDR5102EP-T1-RE3 pinout, SIDR5102EP-T1-RE3 application, or SIDR5102EP-T1-RE3 equivalent, key selection criteria include its low RDS(on)–Qoss figure-of-merit, 100% Rg and UIS testing, and thermal robustness up to +175 °C junction temperature.
Technical Context
This MOSFET employs TrenchFET® Gen V silicon technology, enabling ultra-low conduction and switching losses through optimized cell layout and gate oxide design. Its RDS(on)–Qoss FOM is specifically tuned for hard-switched and high-frequency synchronous rectifier topologies.
The device features a single N-channel configuration with source-connected substrate, integrated body diode (VSD = 0.74 V typ. @ IS = 5 A), and guaranteed avalanche energy rating (EAS = 101 mJ) - supporting reliable operation in OR-ing, hot-swap, and motor drive control circuits under transient stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports primary-side switching in 48 V input DC/DC converters and 12 V–48 V OR-ing applications without derating. |
| RDS(on) max @ VGS = 10 V | 4.1 mΩ - enables <1 W conduction loss at 15 A, critical for high-current synchronous rectifiers. |
| Qg typ. | 25.1 nC - reduces gate drive power and switching transition time in 300 kHz–1 MHz SMPS designs. |
| ID continuous @ TC = 25 °C | 126 A - allows use with minimal heatsinking in compact power modules and board-mounted converters. |
| TJ max | +175 °C - ensures stable operation in automotive under-hood, industrial motor drives, and sealed power supply enclosures. |
| EAS | 101 mJ - provides margin against inductive turn-off transients in motor control and hot-swap circuits. |
| RthJC (drain) | 0.8 °C/W (typ.) - enables efficient heat transfer to PCB copper or external heatsink via exposed drain pad. |
Pinout & Package
Package: PowerPAK® SO-8DC - leadless, double-cooled surface-mount package with exposed drain paddle on bottom side for enhanced thermal performance; dimensions 6.15 mm × 5.15 mm × 0.56 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connected to large exposed copper paddle - primary thermal and current path to PCB ground plane. |
| 4 (top-side) | Gate (G) | Single gate terminal located adjacent to source pins - minimizes gate loop inductance for fast, low-overshoot switching. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V silicon | Delivers industry-leading RDS(on)–Qoss FOM for reduced switching losses in high-frequency DC/DC converters. |
| 100 % Rg tested | Ensures consistent gate drive timing and eliminates batch-to-batch variation in turn-on/turn-off behavior. |
| 100 % UIS tested | Guarantees ruggedness against unclamped inductive switching events common in motor drive and OR-ing circuits. |
| Exposed drain paddle | Provides <0.8 °C/W junction-to-case thermal resistance - enables >100 W power dissipation with 2 oz copper and thermal vias. |
| Lead (Pb)-free & halogen-free | Complies with RoHS 2011/65/EU and Vishay's Green Standard (Doc. #99912) for industrial and automotive end equipment. |
Applications
| Synchronous Rectification | Primary-Side Switching |
|---|---|
|
Use Scenario: High-current secondary-side rectification in isolated 48 V–12 V buck-derived DC/DC converters for server VRMs and telecom power systems. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to minimize conduction loss and improve efficiency above 95%. Use Value: 4.1 mΩ RDS(on) cuts conduction loss by >60% vs. 15 V Schottky, directly increasing full-load efficiency by 1.2–1.8%. |
Use Scenario: Primary-side high-side switch in 300–500 W LLC resonant converters for industrial AC/DC power supplies. IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged N-channel MOSFET handling 100 V bus with 126 A peak current capability. Use Value: 101 mJ EAS and 0.8 °C/W RthJC ensure reliability during resonant tank zero-voltage switching transitions and thermal cycling. |
| OR-ing / Hot-Swap Control | Battery Management Systems |
|
Use Scenario: Redundant 12 V/24 V power rail OR-ing in network switches and distributed power architectures. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET providing low-loss reverse-current blocking and controlled turn-on sequencing. Use Value: Ultra-low 4.1 mΩ on-resistance minimizes voltage drop (<50 mV @ 12 A), preserving system voltage margin and reducing heat generation. |
Use Scenario: Cell-balancing and protection FET in high-power Li-ion battery packs for e-mobility and energy storage. IC Role / Device Role / Timing Role: High-current, high-temperature switch isolating battery strings during fault conditions or charge/discharge control. Use Value: +175 °C rated junction temperature and 136 A continuous source-drain current support sustained operation in thermally constrained pack environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404ZPBF | RDS(on) = 4.7 mΩ @ 10 V; Qg = 110 nC; TO-220 package; RthJA = 62 °C/W | Higher gate charge increases driver loss; through-hole mounting limits board density and thermal performance. | Prefer SIDR5102EP-T1-RE3 for surface-mount, high-frequency, space-constrained designs requiring <30 nC Qg. |
| IXFH120N10P | RDS(on) = 5.2 mΩ @ 10 V; Qg = 105 nC; TO-247 package; RthJC = 0.45 °C/W | Lower thermal resistance but larger footprint and higher Qg; no integrated double-cooling structure. | Choose SIDR5102EP-T1-RE3 when PCB area and switching speed outweigh absolute thermal resistance advantage. |
Compared with IRF1404ZPBF and IXFH120N10P, SIDR5102EP-T1-RE3 delivers superior high-frequency efficiency via its 25.1 nC Qg and 4.1 mΩ RDS(on), while the PowerPAK SO-8DC package enables higher power density and lower system-level thermal impedance than through-hole alternatives.
Availability
SIDR5102EP-T1-RE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, and OR-ing applications requiring stable component supply, long-term lifecycle assurance, and compliance with industrial and automotive thermal specifications.
Supply support for SIDR5102EP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SIDR5102EP-T1-RE3 belongs to Vishay's TrenchFET® Gen V family - engineered specifically for high-efficiency, high-reliability power conversion in demanding industrial, computing, and transportation systems.
FAQ
What is the maximum continuous drain current rating for SIDR5102EP-T1-RE3 at 70 °C case temperature?
The SIDR5102EP-T1-RE3 supports 105.5 A continuous drain current at TC = 70 °C, per its Absolute Maximum Ratings table. This rating reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be validated against actual PCB layout, copper area, and airflow conditions in the final design. The SIDR5102EP-T1-RE3 maintains full 126 A capability only when TC is held at 25 °C.
Does SIDR5102EP-T1-RE3 have an integrated body diode, and what are its key parameters?
Yes, the SIDR5102EP-T1-RE3 includes an integrated source-drain body diode with VSD = 0.74 V (typ.) at IS = 5 A and VGS = 0 V, reverse recovery time trr = 53 ns (typ.), and reverse recovery charge Qrr = 67 nC (typ.). These values are measured at TJ = 25 °C with IF = 10 A and di/dt = 100 A/μs. The SIDR5102EP-T1-RE3 body diode is fully characterized and qualified for synchronous rectifier and freewheeling applications.
What is the gate threshold voltage range for SIDR5102EP-T1-RE3, and how does it vary with temperature?
The SIDR5102EP-T1-RE3 has a gate-source threshold voltage VGS(th) of 2.0 V to 4.0 V at TJ = 25 °C, with a negative temperature coefficient of −7.0 mV/°C. As junction temperature rises, VGS(th) decreases linearly - e.g., at 125 °C, typical VGS(th) drops to ~2.7 V. This behavior is confirmed in the device's Transfer Characteristics graph and must be accounted for in gate drive design to avoid unintended turn-on near maximum operating temperature. The SIDR5102EP-T1-RE3 datasheet specifies this parameter under standardized test conditions (VDS = VGS, ID = 250 μA).
Is SIDR5102EP-T1-RE3 suitable for avalanche-rated applications, and what is its single-pulse rating?
Yes, the SIDR5102EP-T1-RE3 is 100 % tested for Unclamped Inductive Switching (UIS) and rated for single-pulse avalanche energy EAS = 101 mJ with L = 0.1 mH. Its single-pulse avalanche current IAS is 45 A. These ratings apply under specified test conditions (TJ = 25 °C, VDD ≤ VDS, pulse width ≤ 10 ms) and are documented in the Absolute Maximum Ratings table. The SIDR5102EP-T1-RE3 is designed for robust operation in circuits subject to inductive turn-off transients, such as motor drives and hot-swap controllers.
What is the recommended solder profile and rework guidance for SIDR5102EP-T1-RE3?
The SIDR5102EP-T1-RE3 requires peak reflow temperature of 260 °C (per JEDEC J-STD-020), compatible with standard lead-free profiles. Manual soldering with an iron is not recommended due to its leadless PowerPAK SO-8DC construction and exposed copper paddle. Rework must use infrared or hot-air systems calibrated to avoid thermal shock to the die or delamination of the paddle. The SIDR5102EP-T1-RE3 solder profile is detailed in Vishay document #73257, and board layout should follow recommended minimum pads in Application Note #826.
SIDR5102EP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen V
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 28.2A (Ta), 126A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 51 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2850 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 7.5W (Ta), 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8DC
SIDR5102EP-T1-RE3 FAQ
1.How can I place an order for SIDR5102EP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDR5102EP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDR5102EP-T1-RE3 reliable?
The price and inventory of SIDR5102EP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR5102EP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIDR5102EP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR5102EP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDR5102EP-T1-RE3?
SIDR5102EP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDR5102EP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDR5102EP-T1-RE3?
For technical support, including SIDR5102EP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR5102EP-T1-RE3 requirements.
6.How does Aetrix verify that SIDR5102EP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIDR5102EP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR5102EP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIDR5102EP-T1-RE3?
All SIDR5102EP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR5102EP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDR5102EP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIDR5102EP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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