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Vishay Siliconix SIDR510EP-T1-RE3
- Part No.:
- SIDR510EP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIDR510EP-T1-RE3.pdf
- Description:
- N-CHANNEL 100 V (D-S) 175C MOSFE
- Quantity:
- Payment:
- Shipping:
Inventory:5,782
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Product details
Overview
SIDR510EP-T1-RE3 from Vishay Siliconix is an N-channel 100 V TrenchFET® Gen V power MOSFET in PowerPAK® SO-8DC package, rated for 148 A continuous drain current at TC = 25 °C, with RDS(on) of 3.6 mΩ at VGS = 10 V and 4.2 mΩ at VGS = 7.5 V, optimized for high-efficiency synchronous rectification and primary-side switching in industrial DC/DC converters.
For engineers reviewing the SIDR510EP-T1-RE3 datasheet, SIDR510EP-T1-RE3 pinout, SIDR510EP-T1-RE3 application, or SIDR510EP-T1-RE3 equivalent, this device delivers low RDS(on)–Qg and RDS(on)–Qoss figures-of-merit, 100 % Rg and UIS tested reliability, and operation up to TJ = +175 °C - critical for thermally constrained high-power density designs.
Technical Context
This MOSFET employs TrenchFET® Gen V silicon technology to achieve ultra-low on-resistance while maintaining robust gate charge characteristics: Qg typ. is 40 nC at VGS = 7.5 V and 54 nC at VGS = 10 V, with Crss of only 11 pF enabling fast, low-noise switching in hard-switched topologies.
Its PowerPAK® SO-8DC package features double-sided cooling via exposed copper drain pads on both top and bottom surfaces, delivering RthJC (drain) of 0.8 °C/W typical and supporting high-current operation without external heatsinking when mounted on 1" × 1" FR4.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports primary-side switching in 48 V input DC/DC and OR-ing applications up to 80 V bus voltage with margin. |
| RDS(on) max | 3.6 mΩ @ VGS = 10 V - enables <1 W conduction loss at 150 A, critical for >98 % efficiency in high-current synchronous rectifiers. |
| ID (continuous) | 148 A @ TC = 25 °C - allows full utilization of thermal capacity in compact board-mounted power stages. |
| Qg typ. | 40 nC @ VGS = 7.5 V - reduces gate drive power and enables efficient operation with standard 12 V gate drivers. |
| TJ range | −55 °C to +175 °C - qualified for under-hood automotive, industrial motor drives, and battery management systems with wide ambient swings. |
| UIS tested | 100 % production tested - ensures ruggedness against inductive switching transients without external snubbers. |
| RthJC (drain) | 0.8 °C/W typical - enables direct thermal coupling to heatsink or PCB copper, simplifying thermal design in space-constrained modules. |
Pinout & Package
Package: PowerPAK® SO-8DC - leadless, double-cooled surface-mount package with exposed drain pads on top and bottom; dimensions 6.15 mm × 5.15 mm × 0.56 mm (L × W × H); RoHS-compliant, halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching. |
| 5, 6, 7, 8 | Drain (D) | Four exposed drain pads provide dual-side thermal path and low-inductance connection to ground plane or heatsink. |
| 4 (center) | Gate (G) | Single gate terminal located centrally for symmetric drive layout and minimized gate loop inductance. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V silicon | Delivers best-in-class RDS(on)–Qg FOM for reduced switching + conduction losses in high-frequency SMPS. |
| 100 % Rg tested | Ensures consistent gate resistance (0.5–2 Ω), minimizing risk of oscillation and enabling predictable gate driver sizing. |
| Low Crss (11 pF) | Reduces Miller-induced turn-on risk during high dv/dt commutation, improving reliability in half-bridge configurations. |
| Body diode trr = 56 ns | Enables clean reverse recovery in synchronous rectification, reducing EMI and body diode conduction loss. |
| Exposed drain thermal pad | Supports ≤0.8 °C/W junction-to-case (drain) thermal resistance, allowing >100 W dissipation with minimal heatsink area. |
Applications
| Synchronous Rectification | Primary-Side Switching |
|---|---|
Use Scenario: Secondary-side switch in isolated LLC resonant converter for server PSU. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 500 kHz. Use Value: 3.6 mΩ RDS(on) cuts secondary-side conduction loss by >60 % vs. 40 V Schottky, enabling >97 % full-load efficiency at 1.5 kW. |
Use Scenario: High-side switch in 48 V–12 V bidirectional buck-boost converter for EV battery management. IC Role / Device Role / Timing Role: Primary-side power switch handling 100 A peak current with 100 V blocking capability. Use Value: 148 A rating and 175 °C TJ rating allow sustained operation at 85 °C ambient without derating, supporting compact module integration. |
| OR-ing / Hot Swap | Motor Drive Control |
Use Scenario: Back-to-back configuration in redundant 48 V telecom power distribution unit. IC Role / Device Role / Timing Role: Bidirectional OR-ing switch providing fault isolation and seamless switchover between supplies. Use Value: Low RDS(on) minimizes voltage drop (<70 mV at 20 A), preserving system voltage regulation and reducing heat sink requirements. |
Use Scenario: Half-bridge high-side switch in 24 V BLDC motor driver for industrial automation. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET driven by bootstrap gate driver in 20 kHz PWM stage. Use Value: 40 nC Qg at 7.5 V enables <100 ns turn-on delay with 1 Ω gate resistor, supporting precise timing control and low dead-time loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1407PBF | RDS(on) = 8.5 mΩ @ 10 V; TO-220 package; RthJA = 62 °C/W; no UIS testing. | Larger footprint and higher thermal resistance limit use to lower-current (<60 A), lower-frequency (<100 kHz) applications. | Select when cost sensitivity outweighs efficiency and thermal performance; requires heatsink and layout redesign. |
| SiR626DP-T1-RE3 | RDS(on) = 3.2 mΩ @ 10 V; same PowerPAK SO-8DC package; Qg = 49 nC; TJ = 150 °C (not 175 °C). | Higher conduction efficiency but lower temperature rating limits use in high-ambient industrial environments. | Prefer for maximum efficiency below 150 °C ambient; avoid where extended lifetime at 175 °C TJ is required. |
Compared with IRF1407PBF and SiR626DP-T1-RE3, SIDR510EP-T1-RE3 uniquely combines 100 V/148 A rating, 175 °C operation, and 100 % UIS testing in a thermally optimized leadless package - making it the only option for high-reliability, high-power-density synchronous rectification where thermal headroom and transient robustness are non-negotiable.
Availability
SIDR510EP-T1-RE3 is available at Aetrix Electronics and suitable for high-efficiency DC/DC converters, motor drive inverters, and battery management systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.
Supply support for SIDR510EP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and thermal optimization.
SIDR510EP-T1-RE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered specifically for high-current, high-frequency switching in server PSUs, telecom infrastructure, and industrial motor controls demanding low RDS(on)–Qg FOM and extended temperature operation.
FAQ
What is the maximum continuous drain current rating for SIDR510EP-T1-RE3 at case temperature of 70 °C?
The SIDR510EP-T1-RE3 is rated for 124 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® SO-8DC package under steady-state conduction, and must be applied when ambient conditions or PCB copper area restrict heat dissipation. The SIDR510EP-T1-RE3 maintains its 3.6 mΩ RDS(on) at this current level when VGS = 10 V.
Does SIDR510EP-T1-RE3 support gate drive at 7.5 V, and what is its RDS(on) at that voltage?
Yes, SIDR510EP-T1-RE3 is fully characterized and specified for 7.5 V gate drive: its RDS(on) max is 4.2 mΩ at VGS = 7.5 V and ID = 20 A. This makes the SIDR510EP-T1-RE3 compatible with standard logic-level gate drivers and enables lower gate drive power consumption versus 10 V operation, while retaining low conduction loss in high-efficiency DC/DC converters.
Is SIDR510EP-T1-RE3 suitable for synchronous rectification in LLC resonant converters operating above 500 kHz?
Yes, SIDR510EP-T1-RE3 is well-suited for synchronous rectification in LLC resonant converters above 500 kHz due to its low Crss (11 pF), fast switching times (td(on) = 19 ns, tf = 8 ns at VGS = 10 V), and low Qg (40 nC at 7.5 V). These parameters minimize switching loss and Miller-induced shoot-through risk. The SIDR510EP-T1-RE3 also features a fast body diode (trr = 56 ns) to reduce reverse recovery loss in zero-voltage switching transitions.
What is the thermal resistance from junction to case (RthJC) for the drain connection of SIDR510EP-T1-RE3?
The SIDR510EP-T1-RE3 has a typical junction-to-case (drain) thermal resistance (RthJC) of 0.8 °C/W, with a maximum of 1.0 °C/W. This value applies to heat flow from the silicon die to the exposed drain pads on the bottom and top surfaces of the PowerPAK® SO-8DC package. The low RthJC enables effective double-sided cooling and supports high-power operation without external heatsinks when properly mounted on thermally enhanced PCBs.
Are all SIDR510EP-T1-RE3 units 100 % tested for unclamped inductive switching (UIS) stress?
Yes, every SIDR510EP-T1-RE3 unit undergoes 100 % production UIS testing per Vishay's quality protocol. This ensures each device can withstand single-pulse avalanche energy of 101 mJ and peak avalanche current of 45 A without degradation - a critical reliability feature for primary-side switches in flyback or forward converters where inductive energy must be safely clamped internally.
SIDR510EP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen V
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Ta), 148A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 81 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4980 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 7.5W (Ta), 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8DC
SIDR510EP-T1-RE3 FAQ
1.How can I place an order for SIDR510EP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDR510EP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDR510EP-T1-RE3 reliable?
The price and inventory of SIDR510EP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR510EP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIDR510EP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR510EP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDR510EP-T1-RE3?
SIDR510EP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDR510EP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDR510EP-T1-RE3?
For technical support, including SIDR510EP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR510EP-T1-RE3 requirements.
6.How does Aetrix verify that SIDR510EP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIDR510EP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR510EP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIDR510EP-T1-RE3?
All SIDR510EP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR510EP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDR510EP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIDR510EP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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