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Vishay Siliconix SIDR570EP-T1-RE3
- Part No.:
- SIDR570EP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIDR570EP-T1-RE3.pdf
- Description:
- N-CHANNEL 150 V (D-S) 175C MOSFE
- Quantity:
- Payment:
- Shipping:
Inventory:5,990
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Product details
Overview
SIDR570EP-T1-RE3 from Vishay Siliconix is an N-channel 150 V TrenchFET® Gen V power MOSFET in PowerPAK® SO-8DC package, rated for 90.9 A continuous drain current at TC = 25 °C, with RDS(on) of 7.9 mΩ at VGS = 10 V and 8.5 mΩ at VGS = 7.5 V, optimized for high-efficiency synchronous rectification and primary-side switching in industrial DC/DC converters.
For engineers reviewing the SIDR570EP-T1-RE3 datasheet, SIDR570EP-T1-RE3 pinout, SIDR570EP-T1-RE3 application, or SIDR570EP-T1-RE3 equivalent, this device delivers low RDS(on)–Qg and RDS(on)–Qoss figures-of-merit, 100% Rg and UIS tested reliability, and operation up to TJ = 175 °C - critical for thermally constrained power stage designs.
Technical Context
This MOSFET employs TrenchFET® Gen V silicon technology to achieve ultra-low conduction and switching losses. Its gate charge profile (Qg = 35.1 nC typ. at VGS = 7.5 V) and low Crss (6.5 pF) support fast, efficient hard-switching in high-frequency topologies.
The PowerPAK® SO-8DC package features dual-side cooling via exposed drain pads on both top and bottom surfaces, enabling enhanced thermal performance with RthJC (drain) = 0.8 °C/W typical and RthJA = 15 °C/W (t ≤ 10 s) on a 1" × 1" FR4 board.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 150 V - supports primary-side switching in 48 V and 60 V bus systems with margin for voltage transients. |
| RDS(on) @ VGS = 10 V | 7.9 mΩ max - enables <1.6 W conduction loss at 45 A, reducing heatsink requirements in high-current DC/DC stages. |
| RDS(on) @ VGS = 7.5 V | 8.5 mΩ max - ensures stable on-resistance under typical gate drive conditions in controller-based synchronous rectifiers. |
| Qg typ. @ VGS = 7.5 V | 35.1 nC - balances switching speed and gate driver power loss in 100–500 kHz SMPS designs. |
| ID cont. @ TC = 25 °C | 90.9 A - supports high-power density converter designs without paralleling devices. |
| TJ operating range | −55 °C to +175 °C - qualified for under-hood automotive, industrial motor drives, and battery management systems. |
| Body diode VSD | 0.75–1.1 V @ IS = 5 A - low forward drop reduces reverse recovery losses during dead-time conduction. |
Pinout & Package
Package: PowerPAK® SO-8DC - leadless surface-mount package with dual-side thermal access via exposed copper drain pads on top and bottom surfaces; footprint compatible with SO-8 but requires specific solder paste stencil and reflow profile per Doc. 73257.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection; electrically tied to bottom-side thermal pad for low-inductance return path and thermal conduction. |
| 4, 5, 6, 7, 8 | Drain (D) | Multi-pin drain terminals connected to top- and bottom-side exposed copper pads - enables double-sided PCB heat extraction. |
| 4 | Source/Drain common | Pin 4 is internally connected to both source and drain metal layers - serves as shared thermal and electrical node for layout symmetry. |
| 8 | Gate (G) | Single gate input; low Rg (0.4–1.8 Ω) minimizes gate ringing and improves EMI robustness in high-dV/dt environments. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen V silicon | Enables 7.9 mΩ RDS(on) at 150 V rating - industry-leading conduction efficiency for single-die 150 V MOSFETs. |
| RDS(on)–Qoss FOM tuned | Optimized for resonant and ZVS topologies where output capacitance loss dominates - Qoss = 111 pF at VDS = 75 V. |
| 100% Rg and UIS tested | Ensures gate robustness against transient overvoltage and ruggedness against unclamped inductive switching stress. |
| PowerPAK® SO-8DC dual cooling | Reduces junction-to-ambient thermal resistance by ~30% vs. standard SO-8 - RthJA = 15 °C/W (t ≤ 10 s) on minimal PCB area. |
| 175 °C TJ rating | Supports operation in sealed enclosures or high-ambient environments without derating - validated per AEC-Q101 stress tests. |
Applications
| Server VRM Synchronous Rectifier | Industrial 48 V Input DC/DC Converter |
|---|---|
Use Scenario: High-current, high-frequency buck converter in server voltage regulator modules delivering >100 A at 0.8–1.2 V. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to minimize conduction loss and improve efficiency above 90%. Use Value: 7.9 mΩ RDS(on) cuts conduction loss by >40% vs. comparable 10 mΩ MOSFETs, directly increasing full-load efficiency by 0.5–0.8%. |
Use Scenario: Isolated half-bridge or full-bridge DC/DC converter in programmable logic controller (PLC) power supplies. IC Role / Device Role / Timing Role: Primary-side switch handling 48 V input with 150 V VDS margin for surge immunity and safety compliance. Use Value: 35.1 nC Qg at 7.5 V enables clean turn-on/turn-off at 300 kHz with standard gate drivers, reducing switching loss by 12% vs. legacy Gen IV parts. |
| Motor Drive Half-Bridge Leg | Battery Management System OR-ing Switch |
Use Scenario: 24–48 V BLDC motor inverter stage requiring high peak current and thermal resilience. IC Role / Device Role / Timing Role: High-side or low-side switch in three-phase inverter leg, operating continuously at TJ ≥ 150 °C. Use Value: 175 °C maximum junction temperature and 136 A IS rating allow sustained 80 A RMS operation with minimal thermal throttling. |
Use Scenario: Redundant power path selection in lithium-ion battery packs or backup power systems. IC Role / Device Role / Timing Role: OR-ing FET controlling current flow between parallel battery strings or AC/DC and DC/DC sources. Use Value: Low VSD (0.75 V typ.) and fast trr (84 ns typ.) minimize forward voltage drop and reverse recovery energy during source switchover. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF150P222 | RDS(on) = 9.0 mΩ @ 10 V; Qg = 42 nC; TO-220AB package; RthJA = 40 °C/W (standard PCB) | Higher thermal resistance limits power density; unsuitable for compact, double-sided cooled layouts. | Choose when through-hole mounting, lower gate drive strength, or legacy TO-220 footprint is required. |
| SiR626DP | RDS(on) = 6.8 mΩ @ 10 V; Qg = 48.5 nC; PowerPAK® 8x8 package; higher footprint area (8 mm × 8 mm) | Larger footprint increases PCB cost; higher Qg raises gate driver loss in >300 kHz designs. | Choose only if sub-7 mΩ RDS(on) is mandatory and board space permits larger 8x8 package. |
Compared with IRF150P222 and SiR626DP, SIDR570EP-T1-RE3 offers optimal balance of low RDS(on), moderate Qg, and compact PowerPAK SO-8DC thermal performance - enabling highest power density in space-constrained 150 V switching applications without sacrificing reliability or manufacturability.
Availability
SIDR570EP-T1-RE3 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, and battery management systems requiring stable component supply, long-term lifecycle support, and traceable sourcing from Vishay-authorized channels.
Supply support for SIDR570EP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, thermal robustness, and automotive-grade reliability.
SIDR570EP-T1-RE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered specifically for high-frequency, high-current DC/DC conversion in industrial, computing, and transportation systems demanding 175 °C operation and low figure-of-merit metrics.
FAQ
What is the maximum continuous drain current rating for SIDR570EP-T1-RE3 at TC = 70 °C?
The SIDR570EP-T1-RE3 is rated for 76 A continuous drain current at case temperature TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under steady-state conduction and assumes proper PCB copper area and airflow per Vishay's recommended layout in Document 75846.
Does SIDR570EP-T1-RE3 support gate drive voltages below 10 V, and what is its RDS(on) at 7.5 V?
Yes, SIDR570EP-T1-RE3 is fully characterized down to VGS = 7.5 V, with RDS(on) max of 8.5 mΩ at ID = 20 A and TJ = 25 °C. This makes it compatible with 7.5 V gate drivers commonly used in isolated flyback and LLC controllers without requiring level-shifting circuitry.
What is the body diode reverse recovery time (trr) of SIDR570EP-T1-RE3, and how does it impact synchronous rectifier performance?
The SIDR570EP-T1-RE3 has a typical body diode reverse recovery time (trr) of 84 ns at IF = 20 A, di/dt = 100 A/μs, and TJ = 25 °C. This fast recovery minimizes shoot-through risk and reduces switching loss during dead-time conduction in synchronous rectifier applications, especially at frequencies above 200 kHz.
Is SIDR570EP-T1-RE3 qualified for automotive applications, and what is its temperature rating?
SIDR570EP-T1-RE3 is rated for operation from −55 °C to +175 °C junction temperature and is built on Vishay's AEC-Q101-qualified TrenchFET® Gen V process. While not pre-qualified as an automotive part, its 175 °C rating and 100% UIS testing make it suitable for under-hood industrial and transportation applications where automotive-grade stress margins are required.
What thermal resistance values apply to SIDR570EP-T1-RE3 in the PowerPAK® SO-8DC package?
SIDR570EP-T1-RE3 has a typical junction-to-case (drain) thermal resistance RthJC of 0.8 °C/W and a maximum junction-to-ambient RthJA of 20 °C/W (steady state). Under transient conditions (t ≤ 10 s), RthJA drops to 15 °C/W on a 1" × 1" FR4 board - enabling higher short-duration power bursts without exceeding TJ max.
SIDR570EP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen V
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 30.8A (Ta), 90.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 71 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3740 pF @ 75 V
- FET Feature:
- -
- Power Dissipation (Max):
- 7.5W (Ta), 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8DC
SIDR570EP-T1-RE3 FAQ
1.How can I place an order for SIDR570EP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDR570EP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDR570EP-T1-RE3 reliable?
The price and inventory of SIDR570EP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR570EP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIDR570EP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR570EP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDR570EP-T1-RE3?
SIDR570EP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDR570EP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDR570EP-T1-RE3?
For technical support, including SIDR570EP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR570EP-T1-RE3 requirements.
6.How does Aetrix verify that SIDR570EP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIDR570EP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR570EP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIDR570EP-T1-RE3?
All SIDR570EP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR570EP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDR570EP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIDR570EP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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