Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIDR578EP-T1-RE3

Name: SIDR578EP-T1-RE3
Brand: Vishay Siliconix
SKU: SIDR578EP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIDR578EP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIDR578EP-T1-RE3.pdf

Description:: N-CHANNEL 150 V (D-S) 175C MOSFE

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,972

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIDR578EP-T1-RE3 from Vishay Siliconix is an N-channel 150 V, 78 A (T_C = 25 °C), 175 °C junction-rated TrenchFET® Gen V power MOSFET in PowerPAK® SO-8DC package, featuring R_DS(on) = 7.3 mΩ @ V_GS = 10 V and Q_g = 24.5 nC (typ.), optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.

For engineers reviewing the SIDR578EP-T1-RE3 datasheet, SIDR578EP-T1-RE3 pinout, SIDR578EP-T1-RE3 application, or SIDR578EP-T1-RE3 equivalent, key selection criteria include its low R_DS(on)–Q_oss figure-of-merit, 100% R_g and UIS testing, and thermal performance with R_thJC = 0.8 °C/W (drain) enabling high-power-density designs.

Technical Context

This MOSFET employs TrenchFET® Gen V silicon technology to achieve a balanced trade-off between conduction loss (R_DS(on)) and switching loss (Q_g, Q_oss), with R_DS(on) = 7.3 mΩ (typ.) at V_GS = 10 V and Q_oss = 105 pF (typ.) at V_DS = 75 V. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, supporting robust turn-on with standard 7.5 V or 10 V gate drivers.

The device integrates a fast, low-loss body diode with t_rr = 85 ns (typ.) and Q_rr = 200 nC (typ.) at I_F = 20 A, di/dt = 100 A/μs, and T_J = 25 °C - critical for minimizing reverse recovery losses in hard-switched and synchronous rectifier topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - supports primary-side switching in 48 V–96 V input DC/DC and OR-ing applications without derating.
R_DS(on) max @ V_GS = 10 V	8.8 mΩ - enables ≤ 13.5 W conduction loss at 78 A continuous drain current under case-cooled conditions.
Q_g typ. @ V_GS = 7.5 V	24.5 nC - reduces gate drive power and enables efficient operation at 300–500 kHz switching frequencies.
I_D continuous @ T_C = 25 °C	78 A - rated for high-current output stages in server VRMs and telecom power supplies.
R_thJC (drain)	0.8 °C/W (typ.) - allows direct thermal coupling to heatsink via exposed drain pad, supporting >100 W dissipation with minimal ΔT.
T_J operating range	−55 °C to +175 °C - qualified for industrial, automotive under-hood, and high-reliability motor control environments.
V_GS(th)	2.0–4.0 V - ensures reliable enhancement-mode turn-on with standard logic-level or analog gate drivers.

Pinout & Package

Package: PowerPAK® SO-8DC - leadless, double-cooling surface-mount package with exposed drain paddle on bottom side and gate/source terminals on top; dimensions 6.15 mm × 5.15 mm × 0.56 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connected to large exposed copper paddle - primary thermal and current path to PCB heatsink.
4 (top side)	Gate (G)	Single gate terminal located adjacent to source pins - minimizes gate loop inductance for stable high-frequency switching.

Key Features

Feature	Design Value
TrenchFET® Gen V silicon	Delivers industry-leading R_DS(on)–Q_oss FOM for reduced switching + conduction loss trade-off in 150 V class.
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness against unclamped inductive switching stress.
Low Q_gd/Q_g ratio (≈ 0.13)	Improves Miller immunity and enables stable operation with high dv/dt in half-bridge configurations.
Body diode t_rr = 85 ns (typ.)	Reduces reverse recovery loss and EMI generation in synchronous rectifier and OR-ing circuits.
Lead (Pb)-free and halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) for reflow compatibility.

Applications

Server VRM Output Stage	Telecom 48 V DC/DC Primary Switch
Use Scenario: High-current, high-efficiency buck converter delivering up to 200 A at 0.8–1.2 V to CPU/GPU cores in data center servers. IC Role / Device Role: Synchronous rectifier (low-side switch) handling peak currents ≥ 150 A with <10 mΩ on-resistance requirement. Use Value: SIDR578EP-T1-RE3's 7.3 mΩ R_DS(on) and 0.8 °C/W R_thJC enable <1.5 °C temperature rise at 100 A, reducing thermal margin pressure on multilayer PCBs.	Use Scenario: Primary-side switching element in isolated full-bridge or phase-shifted ZVS DC/DC converter for 48 V telecom systems. IC Role / Device Role: High-voltage, high-current primary switch operating at 100–300 kHz with 150 V blocking capability. Use Value: SIDR578EP-T1-RE3's 150 V V_DS, 78 A I_D, and low Q_g support ZVS soft-switching with <25 W gate drive loss at 200 kHz.
Industrial Motor Drive Inverter	Hot-Swap OR-ing Circuit
Use Scenario: Half-bridge leg in 24–48 V BLDC motor drives for factory automation, requiring robust short-circuit withstand and thermal stability. IC Role / Device Role: Low-side power switch subjected to repetitive avalanche stress during commutation and fault events. Use Value: SIDR578EP-T1-RE3's 100 % UIS tested rating and 30 A single-pulse avalanche current ensure reliable operation under motor stall and inductive kickback.	Use Scenario: Back-to-back configuration for redundant 12–48 V power rail OR-ing in network switches and storage controllers. IC Role / Device Role: Low-forward-drop, low-R_DS(on) replacement for Schottky diodes to minimize conduction loss and heat generation. Use Value: SIDR578EP-T1-RE3's 0.75 V body diode forward voltage and 7.3 mΩ R_DS(on) cut power loss by >60 % vs. 40 V Schottky at 30 A.

Server VRM Output Stage

Telecom 48 V DC/DC Primary Switch

Use Scenario: High-current, high-efficiency buck converter delivering up to 200 A at 0.8–1.2 V to CPU/GPU cores in data center servers.

IC Role / Device Role: Synchronous rectifier (low-side switch) handling peak currents ≥ 150 A with <10 mΩ on-resistance requirement.

Use Value: SIDR578EP-T1-RE3's 7.3 mΩ R_DS(on) and 0.8 °C/W R_thJC enable <1.5 °C temperature rise at 100 A, reducing thermal margin pressure on multilayer PCBs.

Use Scenario: Primary-side switching element in isolated full-bridge or phase-shifted ZVS DC/DC converter for 48 V telecom systems.

IC Role / Device Role: High-voltage, high-current primary switch operating at 100–300 kHz with 150 V blocking capability.

Use Value: SIDR578EP-T1-RE3's 150 V V_DS, 78 A I_D, and low Q_g support ZVS soft-switching with <25 W gate drive loss at 200 kHz.

Industrial Motor Drive Inverter

Hot-Swap OR-ing Circuit

Use Scenario: Half-bridge leg in 24–48 V BLDC motor drives for factory automation, requiring robust short-circuit withstand and thermal stability.

IC Role / Device Role: Low-side power switch subjected to repetitive avalanche stress during commutation and fault events.

Use Value: SIDR578EP-T1-RE3's 100 % UIS tested rating and 30 A single-pulse avalanche current ensure reliable operation under motor stall and inductive kickback.

Use Scenario: Back-to-back configuration for redundant 12–48 V power rail OR-ing in network switches and storage controllers.

IC Role / Device Role: Low-forward-drop, low-R_DS(on) replacement for Schottky diodes to minimize conduction loss and heat generation.

Use Value: SIDR578EP-T1-RE3's 0.75 V body diode forward voltage and 7.3 mΩ R_DS(on) cut power loss by >60 % vs. 40 V Schottky at 30 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF150P222	R_DS(on) = 9.5 mΩ @ 10 V; Q_g = 30 nC; TO-220 package; R_thJC = 1.2 °C/W	Higher thermal resistance and larger footprint limit use in space-constrained, high-power-density designs.	Prefer SIDR578EP-T1-RE3 where PCB area and thermal performance are critical; IRF150P222 suits legacy through-hole layouts with heatsink access.
IXTP110N15T	R_DS(on) = 11.0 mΩ @ 10 V; Q_g = 27 nC; TO-220AB package; no 100 % UIS test specified	Lacks guaranteed UIS ruggedness and has higher conduction loss - less suitable for motor drive or hard-switched primary side.	Choose SIDR578EP-T1-RE3 for synchronous rectification or avalanche-prone topologies; IXTP110N15T fits cost-sensitive, lower-stress secondary-side switching.

Compared with IRF150P222 and IXTP110N15T, the SIDR578EP-T1-RE3 delivers superior power density (PowerPAK SO-8DC vs. TO-220), lower thermal resistance (0.8 vs. ≥1.2 °C/W), and verified UIS robustness - making it the preferred choice for modern high-frequency, high-reliability power conversion where layout area and thermal management are constrained.

Availability

SIDR578EP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp and sustained manufacturing.

Supply support for SIDR578EP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on efficiency, ruggedness, and reliability across industrial, computing, and telecom markets.

The SIDR578EP-T1-RE3 belongs to Vishay's TrenchFET® Gen V power MOSFET family, engineered specifically for high-current, high-frequency DC/DC conversion where low R_DS(on)–Q_oss FOM and thermal efficiency are critical system requirements.

FAQ

What is the maximum continuous drain current rating for the SIDR578EP-T1-RE3 at 70 °C case temperature?

The SIDR578EP-T1-RE3 is rated for 65 A continuous drain current at T_C = 70 °C, per its Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat transfer capability at elevated case temperatures, and assumes proper PCB copper area and thermal vias per Vishay's recommended PowerPAK SO-8DC layout guidelines.

Does the SIDR578EP-T1-RE3 have a specified body diode reverse recovery charge (Q_rr)?

Yes, the SIDR578EP-T1-RE3 specifies Q_rr = 200 nC (typ.) and 400 nC (max.) at I_F = 20 A, di/dt = 100 A/μs, and T_J = 25 °C. This value is critical for estimating reverse recovery loss in synchronous rectifier and OR-ing applications, and is measured under standardized conditions documented in the datasheet.

Is the SIDR578EP-T1-RE3 suitable for avalanche energy handling in motor drive applications?

Yes, the SIDR578EP-T1-RE3 is 100 % UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy E_AS = 45 mJ and current I_AS = 30 A (L = 0.1 mH). This makes it suitable for motor drive half-bridge legs where inductive load switching generates repetitive avalanche stress.

What is the gate-source leakage current specification for the SIDR578EP-T1-RE3?

The SIDR578EP-T1-RE3 specifies gate-source leakage current I_GSS ≤ 100 nA at V_GS = ±20 V and T_J = 25 °C. This low leakage supports stable gate bias in high-impedance drive circuits and ensures minimal standby power loss in always-on control architectures.

How does the PowerPAK SO-8DC package of the SIDR578EP-T1-RE3 differ thermally from standard SO-8?

The PowerPAK SO-8DC package features an exposed drain paddle on the bottom side and four parallel drain terminals, achieving R_thJC = 0.8 °C/W (drain) - significantly lower than standard SO-8's ~3–4 °C/W. This enables direct thermal conduction to the PCB, supporting higher continuous power dissipation without external heatsinks.

SIDR578EP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen V

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 17.4A (Ta), 78A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2540 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 7.5W (Ta), 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8DC

SIDR578EP-T1-RE3 FAQ

1.How can I place an order for SIDR578EP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDR578EP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDR578EP-T1-RE3 reliable?

The price and inventory of SIDR578EP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR578EP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIDR578EP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR578EP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDR578EP-T1-RE3?

SIDR578EP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDR578EP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDR578EP-T1-RE3?

For technical support, including SIDR578EP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR578EP-T1-RE3 requirements.

6.How does Aetrix verify that SIDR578EP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIDR578EP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR578EP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIDR578EP-T1-RE3?

All SIDR578EP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR578EP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDR578EP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIDR578EP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …