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Vishay Siliconix SIDR608EP-T1-RE3
- Part No.:
- SIDR608EP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIDR608EP-T1-RE3.pdf
- Description:
- N-CHANNEL 45 V (D-S) 175C MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:5,990
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Product details
Overview
SIDR608EP-T1-RE3 from Vishay Siliconix is an N-channel 45 V TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8DC package, rated for 228 A continuous drain current at TC = 25 °C, with RDS(on) of 1.20 mΩ at VGS = 10 V and 1.80 mΩ at VGS = 4.5 V, optimized for high-efficiency synchronous rectification in server VRMs and telecom DC/DC converters.
For engineers reviewing the SIDR608EP-T1-RE3 datasheet, SIDR608EP-T1-RE3 pinout, SIDR608EP-T1-RE3 application, or SIDR608EP-T1-RE3 equivalent, key selection criteria include its low Qg (50.5 nC typ. at 4.5 V), ultra-low RDS(on), 175 °C junction rating, and double-sided cooling capability enabled by the exposed-drain PowerPAK SO-8DC footprint.
Technical Context
This MOSFET employs trench-based silicon architecture to achieve simultaneous optimization of conduction loss (via 1.20 mΩ RDS(on)) and switching loss (via 50.5 nC Qg and 120 pF Crss at VDS = 20 V). Its gate threshold voltage (1.1–2.3 V) enables robust 4.5 V logic-level drive compatibility while maintaining noise immunity.
The device integrates a fast body diode with trr = 52 ns (typ.) and Qrr = 71 nC, supporting high-frequency hard-switched and synchronous rectifier topologies. Thermal design leverages dual thermal paths - junction-to-case (RthJC = 0.9 °C/W max to drain) and junction-to-source - enabled by the leadless, double-cooling PowerPAK SO-8DC package.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (max) | 45 V - Supports input rails up to 42 V nominal in 48 V intermediate bus systems |
| RDS(on) (10 V) | 1.20 mΩ - Enables <1.5 W conduction loss at 100 A, critical for >95 % efficiency in high-current VRMs |
| RDS(on) (4.5 V) | 1.80 mΩ - Ensures full enhancement with standard 5 V PWM controllers without level-shifting |
| Qg (4.5 V) | 50.5 nC - Reduces gate drive power and EMI in 300–1000 kHz switching applications |
| ID (cont, TC=25°C) | 228 A - Matches high-phase-count multiphase buck converter output stages |
| TJ (max) | +175 °C - Allows operation in thermally constrained server and base station environments |
| Package | PowerPAK® SO-8DC - Exposed drain and source pads enable PCB-side heatsinking and >2× thermal performance vs. SO-8 |
Pinout & Package
PowerPAK® SO-8DC is a leadless, surface-mount package with dual thermal pads: the drain terminals (pins 1, 2, 3, 7, 8) form a single exposed copper island on the bottom side; source terminals (pins 4, 5, 6) are internally paralleled and accessible via top-side leads; gate (pin 4) is isolated. Soldering requires reflow only - manual iron rework is not recommended.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1,2,3,7,8 (Drain) | Main current path collector / thermal interface | Paralleled exposed copper pad for low-inductance, high-current drain connection and primary heat extraction path to PCB |
| 4,5,6 (Source) | Current return path / reference node | Top-side GND-referenced terminals enabling Kelvin sensing and low-noise source routing in synchronous buck layouts |
| 4 (Gate) | Control electrode | Isolated input terminal with 0.3–1.5 Ω gate resistance - supports direct drive from integrated PWM controllers without external gate resistors |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers 1.20 mΩ RDS(on) at 10 V while maintaining 50.5 nC Qg - enabling best-in-class figure-of-merit (RDS(on) × Qg = 60.6 Ω·nC) |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress in motor and power supply fault conditions |
| Double-cooling PowerPAK SO-8DC | Provides separate thermal paths from junction to drain (0.9 °C/W) and junction to source (1.1 °C/W), enabling >30 % higher power density than standard SO-8 |
| Low Qoss (59 pC) | Reduces turn-off energy loss and improves light-load efficiency in CCM/DCM hybrid control schemes |
| Fast body diode (trr = 52 ns) | Minimizes reverse recovery loss and shoot-through risk during dead-time in synchronous rectifiers operating above 500 kHz |
Applications
| Server Voltage Regulator Modules (VRMs) | Telecom 48 V Intermediate Bus Converters |
|---|---|
Use Scenario: High-current, multiphase buck converters supplying CPUs/GPUs with dynamic loads up to 600 A. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch in each phase leg, operating at 300–1000 kHz with 4.5 V gate drive. Use Value: 1.20 mΩ RDS(on) reduces conduction loss by >40 % versus 2.0 mΩ alternatives, directly improving system efficiency and reducing heatsink size. |
Use Scenario: Isolated or non-isolated 48 V-to-12 V/5 V DC/DC modules for wireless base stations and edge routers. IC Role / Device Role / Timing Role: Primary-side high-current switch in hard-switched forward or active-clamp forward topologies. Use Value: 228 A continuous rating and 400 A pulsed capability support >1 kW output without paralleling, simplifying layout and BOM. |
| Industrial Motor Drive Inverters | High-Power LED Driver Circuits |
Use Scenario: 3-phase inverter stages for servo drives and HVAC compressors delivering 5–15 kW mechanical output. IC Role / Device Role / Timing Role: Half-bridge low-side switch handling 100+ A peak phase current with 10–20 kHz PWM. Use Value: 175 °C TJ rating and 0.9 °C/W RthJC allow reliable operation at case temperatures up to 110 °C without derating. |
Use Scenario: Constant-current LED drivers for stadium lighting and industrial UV curing systems requiring >100 A output. IC Role / Device Role / Timing Role: Primary switching element in buck-derived constant-current regulators operating at 100–500 kHz. Use Value: Ultra-low Qg (50.5 nC) and fast switching (tr = 10 ns) minimize switching losses at high frequency, enabling compact magnetics and passive filtering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFH7107TRPBF | RDS(on) = 1.35 mΩ @ 10 V; Qg = 52 nC; same PowerSO-8 package but single-cooling | Lacks dual thermal path - RthJC = 1.4 °C/W (drain only); lower ID rating (190 A) | Acceptable where board-level heatsinking is limited to top side and peak current ≤ 190 A |
| IXTP130N045T | TO-220 package; RDS(on) = 1.30 mΩ @ 10 V; Qg = 110 nC; no integrated body diode optimization | Requires external freewheeling diode; higher switching loss due to 2× Qg; manual assembly compatible | Preferred for prototyping or low-volume designs needing through-hole mounting and field serviceability |
Compared with IRFH7107TRPBF and IXTP130N045T, SIDR608EP-T1-RE3 delivers superior thermal performance via double-cooling, lower switching loss from reduced Qg, and optimized body diode dynamics - making it the preferred choice for production-grade, high-density, high-efficiency power stages.
Availability
SIDR608EP-T1-RE3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for volume production.
Supply support for SIDR608EP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SIDR608EP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8DC family, engineered specifically for high-current, high-frequency power conversion in datacenter, telecom, and industrial infrastructure where thermal density and switching efficiency are critical.
FAQ
What is the maximum continuous drain current rating for SIDR608EP-T1-RE3 at 70 °C case temperature?
The SIDR608EP-T1-RE3 supports 190 A continuous drain current when the case temperature (TC) is maintained at 70 °C, as specified in the Absolute Maximum Ratings table. This derating from the 228 A rating at TC = 25 °C reflects thermal limits under sustained high-power operation and must be validated with actual board-level thermal design using the provided RthJC = 0.9 °C/W (drain) value.
Does SIDR608EP-T1-RE3 support 4.5 V gate drive in practical applications?
Yes, SIDR608EP-T1-RE3 is fully characterized for 4.5 V gate drive, with RDS(on) = 1.80 mΩ (max) and Qg = 50.5 nC (typ.) at VGS = 4.5 V. Its gate threshold voltage range (1.1–2.3 V) ensures reliable turn-on with standard 5 V logic outputs, and the low Qg enables efficient driving even with integrated controller gate drivers lacking external boost capability.
What is the significance of the "DC" marking in the Safe Operating Area (SOA) curve for SIDR608EP-T1-RE3?
The "DC" label in the SOA curve indicates the device's continuous safe operating boundary under steady-state conditions - defined by the RDS(on)-limited region at low VDS and the package power dissipation limit at higher VDS. For SIDR608EP-T1-RE3, this corresponds to 228 A at VDS < 0.25 V (conduction-limited) and scales inversely with RDS(on) × ID², requiring proper heatsinking to maintain TJ ≤ 175 °C during DC operation.
How does the PowerPAK® SO-8DC package improve thermal performance compared to standard SO-8?
The PowerPAK® SO-8DC package used by SIDR608EP-T1-RE3 features exposed drain and source copper pads on opposite sides of the package, enabling independent thermal paths: junction-to-drain (RthJC = 0.9 °C/W) and junction-to-source (RthJC = 1.1 °C/W). This double-cooling architecture provides >2× the effective thermal conductivity of standard SO-8, allowing higher power density without increasing board area or airflow requirements.
Is SIDR608EP-T1-RE3 suitable for avalanche energy handling in inductive load switching?
Yes, SIDR608EP-T1-RE3 is rated for single-pulse avalanche energy (EAS) of 125 mJ and single-pulse avalanche current (IAS) of 50 A (L = 0.1 mH), with 100 % UIS testing performed during production. These ratings validate its robustness in motor drive and relay-driving applications where inductive kickback must be safely clamped without external snubbers.
SIDR608EP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 45 V
- Current - Continuous Drain (Id) @ 25°C:
- 56A (Ta), 228A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 167 nC @ 10 V
- Vgs (Max):
- +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8900 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 7.5W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8DC
SIDR608EP-T1-RE3 FAQ
1.How can I place an order for SIDR608EP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDR608EP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDR608EP-T1-RE3 reliable?
The price and inventory of SIDR608EP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR608EP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIDR608EP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR608EP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDR608EP-T1-RE3?
SIDR608EP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDR608EP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDR608EP-T1-RE3?
For technical support, including SIDR608EP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR608EP-T1-RE3 requirements.
6.How does Aetrix verify that SIDR608EP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIDR608EP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR608EP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIDR608EP-T1-RE3?
All SIDR608EP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR608EP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDR608EP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIDR608EP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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