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Vishay Siliconix SIDR610DP-T1-GE3
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- Part No.:
- SIDR610DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIDR610DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 200V 8.9A/39.6A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,231
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Product details
Overview
SIDR610DP-T1-GE3 from Vishay Siliconix is an N-channel 200 V (D-S) TrenchFET® MOSFET in PowerPAK® SO-8DC package, delivering RDS(on) = 0.0319 Ω at VGS = 10 V, Qg = 20 nC (typ.), and 39.6 A continuous drain current at TC = 25 °C. It serves as a high-efficiency primary/secondary side switch or synchronous rectifier in telecom DC/DC converters.
For engineers reviewing the SIDR610DP-T1-GE3 datasheet, SIDR610DP-T1-GE3 pinout, SIDR610DP-T1-GE3 application, or SIDR610DP-T1-GE3 equivalent, key selection criteria include its top-side cooling capability, 100 % Rg and UIS tested reliability, tuned RDS(on)–Qoss figure-of-merit, and leadless PowerPAK SO-8DC thermal performance under steady-state and pulsed conditions.
Technical Context
This MOSFET employs trench-based silicon architecture optimized for low conduction loss and fast switching dynamics. Its gate charge profile (Qg = 20 nC typ., Qgd = 6.8 nC) and capacitance values (Ciss = 1380 pF, Coss = 142 pF) support high-frequency operation in hard-switched and resonant topologies.
The device features dual thermal paths-junction-to-case (drain) RthJC = 0.8 °C/W (max) and junction-to-source RthJC = 1.1 °C/W (max)-enabled by exposed copper drain and source pads on the bottom side, plus top-side cooling via the thermally enhanced PowerPAK SO-8DC layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports primary-side switching in 48 V telecom and 100–200 V bus applications without derating. |
| RDS(on) max @ VGS = 10 V | 0.0319 Ω - enables ≤ 12.7 W conduction loss at 20 A, critical for high-current synchronous rectification. |
| ID continuous @ TC = 25 °C | 39.6 A - defines maximum safe DC current with adequate heatsinking on the drain pad. |
| Qg typ. | 20 nC - determines gate drive power requirement and switching speed in 100–500 kHz DC/DC designs. |
| RthJC (drain) | 0.8 °C/W (max) - allows direct thermal coupling to PCB copper or heatsink for >100 W power handling. |
| Body diode VSD | 0.77 V (typ.) - reduces reverse recovery losses during synchronous FET dead-time in buck or LLC converters. |
| EAS | 45 mJ - ensures robustness against single-pulse avalanche stress during inductive turn-off transients. |
Pinout & Package
Package: PowerPAK® SO-8DC - leadless, double-cooling surface-mount package with exposed drain (pins 5–8) and source (pins 1–3) copper pads on bottom side, plus top-side thermal access via drain tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Common source connection; bottom-side exposed copper pad provides low-inductance, high-current return path and thermal conduction to PCB. |
| 4 | Gate (G) | Control input; requires < ±20 V rating and low-impedance drive to manage 20 nC total gate charge efficiently. |
| 5, 6, 7, 8 | Drain (D) | High-voltage power terminal; bottom-side exposed copper pad enables primary thermal path to heatsink or internal PCB plane. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Optimizes trade-off among RDS(on), Qg, Qsw, and Qoss - delivers best-in-class efficiency for 200 V switching in compact footprints. |
| Tuned RDS(on)–Qoss FOM | Minimizes switching + conduction loss product - directly improves full-load efficiency in high-frequency DC/DC converters. |
| Top-side cooling feature | Enables thermal transfer from drain tab top surface - adds redundancy beyond bottom-side conduction, supporting >125 W dissipation with proper layout. |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency and ruggedness against unclamped inductive switching - eliminates field failure risk in hard-switched SMPS. |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard - suitable for industrial and telecom end-equipment. |
Applications
| Telecom DC/DC Converters | Primary-Side Switching |
|---|---|
Use Scenario: Step-down conversion from 48 V or 54 V intermediate bus to 12 V or 5 V in base station power modules. IC Role / Device Role / Timing Role: High-side N-channel MOSFET operating as main switching element in synchronous buck topology at 200–500 kHz. Use Value: Low RDS(on) (0.0319 Ω) and fast switching (tf = 24 ns typ.) reduce conduction and transition losses, enabling >95 % efficiency at 25 A output. |
Use Scenario: High-voltage switching in flyback or forward converter primary circuits for AC/DC adapters and telecom rectifiers. IC Role / Device Role / Timing Role: Main power switch handling 200 V drain-source blocking and repetitive 39.6 A peak currents. Use Value: 45 mJ avalanche energy rating and 100 % UIS testing ensure reliable operation during transformer leakage spike events. |
| Synchronous Rectification | Class D Audio Amplifiers |
Use Scenario: Secondary-side rectification in isolated LLC or phase-shifted full-bridge converters for server PSUs. IC Role / Device Role / Timing Role: Low-VGS(th) (2–4 V) N-channel MOSFET replacing Schottky diodes to minimize forward voltage drop. Use Value: Body diode VSD = 0.77 V (typ.) and low Qrr = 400 nC enable clean commutation with minimal reverse recovery loss. |
Use Scenario: Output stage half-bridge switching in high-power (>100 W) Class D amplifiers for broadcast and pro-audio systems. IC Role / Device Role / Timing Role: Fast-switching, high-current output FET managing PWM-driven speaker loads with minimal distortion. Use Value: Low Qgd/Qg ratio (6.8/20 = 0.34) ensures stable Miller plateau control and reduced shoot-through risk at >300 kHz switching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 200 V MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP26N20P | TO-220 package, RDS(on) = 0.045 Ω @ 10 V, Qg = 32 nC - higher gate charge and larger footprint. | Requires through-hole mounting and external heatsink; less suitable for high-density DC/DC modules. | Choose when board space permits discrete heatsinking and lower cost per watt is prioritized over layout density. |
| IRFP4668PBF | TO-247AC package, RDS(on) = 0.027 Ω @ 10 V, Qg = 115 nC - lower RDS(on) but significantly higher gate drive demand. | Designed for high-power industrial inverters; excessive Qg complicates gate drive in >300 kHz telecom converters. | Prefer only in low-frequency (<100 kHz), high-current applications where conduction loss dominates and gate drive capability is ample. |
Compared with IXTP26N20P and IRFP4668PBF, SIDR610DP-T1-GE3 offers superior power density and switching efficiency in space-constrained telecom and server power supplies due to its PowerPAK SO-8DC double-cooling thermal design and balanced RDS(on)/Qg optimization.
Availability
SIDR610DP-T1-GE3 is available at Aetrix Electronics and suitable for fixed telecom infrastructure, DC/DC converter modules, and Class D amplifier designs requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.
Supply support for SIDR610DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability for industrial and communications markets.
The SIDR610DP-T1-GE3 belongs to Vishay's PowerPAK® SO-8DC TrenchFET® family, engineered specifically for high-frequency, high-efficiency switching in space-constrained telecom and server power supplies where thermal management and gate drive simplicity are critical.
FAQ
What is the maximum continuous drain current rating for SIDR610DP-T1-GE3 at case temperature of 70 °C?
The SIDR610DP-T1-GE3 supports 31.7 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal vias under the exposed drain and source pads to maintain junction temperature ≤150 °C. Derating applies above 70 °C case temperature per the current derating curve in Figure 5 of the datasheet.
Does SIDR610DP-T1-GE3 have integrated ESD protection on the gate?
SIDR610DP-T1-GE3 does not include integrated gate ESD protection diodes. Its gate-source voltage rating is ±20 V, and it must be handled per standard MOSFET ESD precautions-using grounded workstations, anti-static packaging, and controlled gate drive circuits. The device is 100 % Rg tested but not rated for human-body-model (HBM) or charged-device-model (CDM) ESD events.
Can SIDR610DP-T1-GE3 be used in avalanche mode for circuit protection?
Yes - SIDR610DP-T1-GE3 is 100 % UIS (unclamped inductive switching) tested and rated for single-pulse avalanche energy EAS = 45 mJ at TJ = 25 °C. It is designed to safely absorb inductive energy during turn-off transients, but repetitive avalanche operation is not guaranteed and requires careful thermal analysis per Application Note AN826.
What is the recommended solder profile for SIDR610DP-T1-GE3's PowerPAK SO-8DC package?
The recommended peak solder temperature for SIDR610DP-T1-GE3 is 260 °C, per the "Soldering recommendations" note in the datasheet. Reflow must follow JEDEC J-STD-020 moisture sensitivity level (MSL) 1 profile. Manual soldering with an iron is not recommended due to the leadless construction and risk of insufficient bottom-side wetting on the exposed copper pads.
How does the top-side cooling feature of SIDR610DP-T1-GE3 improve thermal performance?
The top-side cooling feature of SIDR610DP-T1-GE3 refers to the exposed drain copper area on the top surface of the PowerPAK SO-8DC package, which allows direct thermal interface to a heatsink or thermal pad. This supplements the primary bottom-side thermal path, reducing effective RthJA and enabling higher sustained power dissipation - especially valuable in enclosed or airflow-limited telecom modules where PCB convection is limited.
SIDR610DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.9A (Ta), 39.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 31.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1380 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.25W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8DC
SIDR610DP-T1-GE3 FAQ
1.How can I place an order for SIDR610DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDR610DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDR610DP-T1-GE3 reliable?
The price and inventory of SIDR610DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR610DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIDR610DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR610DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDR610DP-T1-GE3?
SIDR610DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDR610DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDR610DP-T1-GE3?
For technical support, including SIDR610DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR610DP-T1-GE3 requirements.
6.How does Aetrix verify that SIDR610DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIDR610DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR610DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIDR610DP-T1-GE3?
All SIDR610DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR610DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDR610DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIDR610DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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