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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIDR610DP-T1-RE3

Name: SIDR610DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIDR610DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIDR610DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIDR610DP-T1-RE3.pdf

Description:: N-CHANNEL 200-V (D-S) MOSFET

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Product details

Overview

SIDR610DP-T1-RE3 from Vishay Siliconix is an N-channel 200 V (D-S) power MOSFET in PowerPAK® SO-8DC package, optimized for high-efficiency DC/DC converters and synchronous rectification. It delivers R_DS(on) = 0.0319 Ω at V_GS = 10 V, Q_g = 20 nC (typ.), and 39.6 A continuous drain current at T_C = 25 °C - enabling low conduction loss and fast switching in telecom and Class D amplifier primary-side switch applications.

For engineers reviewing the SIDR610DP-T1-RE3 datasheet, SIDR610DP-T1-RE3 pinout, SIDR610DP-T1-RE3 application, or SIDR610DP-T1-RE3 equivalent, key selection criteria include its top-side cooling capability, 100 % R_g and UIS tested reliability, tuned R_DS(on)–Q_oss figure-of-merit, and leadless PowerPAK SO-8DC thermal performance under steady-state and pulsed conditions.

Technical Context

This MOSFET employs TrenchFET® technology to balance R_DS(on), gate charge (Q_g = 20–38 nC), output charge (Q_oss = 52 pF), and reverse transfer capacitance (C_rss = 11 pF). Its 200 V V_DS rating and ±20 V V_GS range support robust operation in isolated flyback and active clamp forward topologies.

The device features a source-drain body diode with V_SD = 0.77–1.1 V at I_S = 5 A and t_rr = 100–200 ns, enabling efficient synchronous rectification. Thermal design is enhanced by top-side cooling and low R_thJC = 0.8 °C/W (drain) and 1.1 °C/W (source), validated per JEDEC JESD51-14 standards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports primary-side switching in 48 V telecom and 100–200 V bus applications without derating
R_DS(on) max @ V_GS = 10 V	0.0319 Ω - enables <1.3 W conduction loss at 20 A, critical for high-current DC/DC output stages
Q_g typ.	20 nC - reduces gate drive power and enables >500 kHz switching in hard-switched converters
I_D continuous @ T_C = 25 °C	39.6 A - sustains full-load current in compact 1" × 1" FR4 PCB layouts with minimal heatsinking
R_thJC (drain)	0.8 °C/W (typ.) - allows direct thermal coupling to copper planes or heatsinks via exposed drain pad
Q_oss	52 pF - contributes to low R_DS(on)–Q_oss FOM of ~1.67 Ω·nC, minimizing turn-off loss in ZVS circuits
V_GS(th)	2–4 V - ensures reliable enhancement-mode turn-on with standard 5 V or 3.3 V logic-level gate drivers

Pinout & Package

Package: PowerPAK® SO-8DC - leadless, dual-cooling surface-mount package with exposed copper drain pad on bottom and top-side thermal pad for enhanced heat dissipation. Dimensions: 5.00 mm × 6.00 mm × 0.56 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching
5, 6, 7, 8	Drain (D)	Exposed copper drain pad (bottom) and top-side thermal pad enable dual-path heat extraction to PCB and heatsink
4	Gate (G)	Single gate input with R_g = 0.6–4 Ω (typ./max), optimized for low-noise gate drive and EMI control

Key Features

Feature	Design Value
TrenchFET® process	Delivers lowest R_DS(on)–Q_oss FOM (1.67 Ω·nC) among 200 V SO-8DC MOSFETs for reduced switching + conduction loss trade-off
Top-side cooling	Thermal pad on top surface allows direct contact with heatsink or thermal interface material, supplementing bottom-side conduction
100 % R_g tested	Ensures gate resistance consistency (0.6–4 Ω), critical for predictable gate drive timing and EMI performance
100 % UIS tested	Validated avalanche energy rating (E_AS = 45 mJ) guarantees ruggedness during transient overvoltage events in unclamped inductive loads
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (Doc. #99912) for industrial and telecom environmental requirements

Applications

Fixed Telecom Power Supply	Isolated DC/DC Converter
Use Scenario: Primary-side switch in 48 V input telecom rectifier modules delivering 300–1000 W output. IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET operating in hard-switched forward or flyback topology at 200–300 kHz. Use Value: Low R_DS(on) (0.0319 Ω) minimizes conduction loss at full load; top-side cooling maintains T_J < 125 °C without external heatsink.	Use Scenario: Secondary-side synchronous rectifier in 12 V or 5 V isolated DC/DC modules for server VRMs and base station radios. IC Role / Device Role / Timing Role: Low-V_DS rectifying switch replacing Schottky diodes, driven by transformer-coupled gate signal. Use Value: Body diode t_rr = 100–200 ns and low V_SD = 0.77 V reduce reverse recovery loss and forward drop vs. discrete diodes.
Class D Audio Amplifier	Primary-Side Switch in SMPS
Use Scenario: Output half-bridge switch in high-fidelity 200–500 W Class D amplifiers requiring low THD+N and thermal stability. IC Role / Device Role / Timing Role: Fast-switching N-channel power stage with precise dead-time control enabled by low Q_g (20 nC). Use Value: Low C_rss = 11 pF and fast t_f = 24–48 ns minimize shoot-through risk and improve PWM fidelity at >300 kHz carrier frequencies.	Use Scenario: Main switching transistor in 100–200 V input industrial SMPS used in PLCs and motor drives. IC Role / Device Role / Timing Role: High-reliability primary switch handling repetitive 80 A pulsed drain current (I_DM) and 30 A avalanche current (I_AS). Use Value: 100 % UIS testing and 45 mJ E_AS ensure survival during inductive kickback from transformer leakage inductance.

Fixed Telecom Power Supply

Isolated DC/DC Converter

Use Scenario: Primary-side switch in 48 V input telecom rectifier modules delivering 300–1000 W output.

IC Role / Device Role / Timing Role: High-voltage N-channel MOSFET operating in hard-switched forward or flyback topology at 200–300 kHz.

Use Value: Low R_DS(on) (0.0319 Ω) minimizes conduction loss at full load; top-side cooling maintains T_J < 125 °C without external heatsink.

Use Scenario: Secondary-side synchronous rectifier in 12 V or 5 V isolated DC/DC modules for server VRMs and base station radios.

IC Role / Device Role / Timing Role: Low-V_DS rectifying switch replacing Schottky diodes, driven by transformer-coupled gate signal.

Use Value: Body diode t_rr = 100–200 ns and low V_SD = 0.77 V reduce reverse recovery loss and forward drop vs. discrete diodes.

Class D Audio Amplifier

Primary-Side Switch in SMPS

Use Scenario: Output half-bridge switch in high-fidelity 200–500 W Class D amplifiers requiring low THD+N and thermal stability.

IC Role / Device Role / Timing Role: Fast-switching N-channel power stage with precise dead-time control enabled by low Q_g (20 nC).

Use Value: Low C_rss = 11 pF and fast t_f = 24–48 ns minimize shoot-through risk and improve PWM fidelity at >300 kHz carrier frequencies.

Use Scenario: Main switching transistor in 100–200 V input industrial SMPS used in PLCs and motor drives.

IC Role / Device Role / Timing Role: High-reliability primary switch handling repetitive 80 A pulsed drain current (I_DM) and 30 A avalanche current (I_AS).

Use Value: 100 % UIS testing and 45 mJ E_AS ensure survival during inductive kickback from transformer leakage inductance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-RE3	R_DS(on) = 0.022 Ω @ 10 V (lower), Q_g = 24 nC (higher), same PowerPAK SO-8DC package	Better conduction loss but higher gate drive requirement; suited for lower-frequency, high-current apps where switching loss is secondary	Select SiR626DP-T1-RE3 when R_DS(on) reduction outweighs Q_g penalty and layout supports identical footprint
IRF6642TRPBF	R_DS(on) = 0.028 Ω @ 10 V, Q_g = 22 nC, PowerSO-8 package (different pinout, no top-side cooling)	Lacks top-side thermal path; higher R_thJA = 25 °C/W limits power density in space-constrained designs	Choose IRF6642TRPBF only if legacy board reuse is required and thermal margin permits higher junction temperature

Compared with SIDR610DP-T1-RE3, SiR626DP-T1-RE3 offers lower conduction loss but demands more gate drive energy, while IRF6642TRPBF lacks top-side cooling and has inferior thermal resistance - making SIDR610DP-T1-RE3 optimal for thermally constrained, medium-frequency telecom and audio applications requiring balanced FOM and dual-cooling capability.

Availability

SIDR610DP-T1-RE3 is available at Aetrix Electronics and suitable for fixed telecom power supplies, isolated DC/DC converters, and Class D amplifier designs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp.

Supply support for SIDR610DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The PowerPAK SO-8DC product line was developed to deliver superior thermal performance and power density for high-current, high-voltage switching applications in telecom, computing, and industrial power systems.

FAQ

What is the maximum continuous drain current rating for SIDR610DP-T1-RE3 at case temperature 70 °C?

The maximum continuous drain current for SIDR610DP-T1-RE3 is 31.7 A when the case temperature (T_C) is maintained at 70 °C. This rating reflects thermal derating due to reduced heat dissipation capacity at elevated temperatures and is specified in the Absolute Maximum Ratings table. Designers must ensure adequate PCB copper area or heatsinking to sustain this current without exceeding the 150 °C maximum junction temperature. The SIDR610DP-T1-RE3 datasheet confirms this value under steady-state conditions with proper thermal management.

Does SIDR610DP-T1-RE3 support logic-level gate drive?

SIDR610DP-T1-RE3 has a gate-source threshold voltage (V_GS(th)) of 2–4 V, enabling reliable turn-on with 5 V logic-level gate drivers. However, its R_DS(on) is fully specified at V_GS = 10 V (0.0319 Ω) and V_GS = 7.5 V (0.0334 Ω), so optimal conduction performance requires ≥7.5 V drive. While it will conduct with 3.3 V or 5 V, R_DS(on) increases significantly below 7.5 V - the SIDR610DP-T1-RE3 is not classified as a true logic-level MOSFET for low-R_DS(on) operation.

What is the thermal resistance from junction to case (R_thJC) for SIDR610DP-T1-RE3, and which terminal does it reference?

SIDR610DP-T1-RE3 specifies two junction-to-case thermal resistances: R_thJC = 0.8 °C/W (typical) for the drain path and R_thJC = 1.1 °C/W (typical) for the source path. The lower drain-path value applies to heat flow from junction to the exposed copper drain pad (pins 5–8 and bottom thermal pad), which is the primary thermal conduction path. This dual-path specification is confirmed in the Thermal Resistance Ratings table and supports top- and bottom-side cooling strategies in the SIDR610DP-T1-RE3 datasheet.

Is SIDR610DP-T1-RE3 suitable for synchronous rectification in 12 V output DC/DC converters?

Yes, SIDR610DP-T1-RE3 is suitable for synchronous rectification in 12 V output DC/DC converters due to its low V_SD = 0.77–1.1 V body diode forward voltage and fast t_rr = 100–200 ns. Its 200 V V_DS rating provides ample margin against voltage spikes in secondary-side configurations. The device's 39.6 A continuous source current (I_S) and 80 A pulsed rating support high-current outputs, and its top-side cooling enhances thermal headroom - all verified in the Applications and Electrical Characteristics sections of the SIDR610DP-T1-RE3 datasheet.

What does "top side cooling feature" mean for SIDR610DP-T1-RE3, and how is it implemented?

The "top side cooling feature" of SIDR610DP-T1-RE3 refers to a dedicated thermal pad on the top surface of the PowerPAK SO-8DC package, electrically isolated from all terminals, designed for direct contact with a heatsink or thermal interface material. This supplements bottom-side conduction through the exposed drain pad, enabling dual-path heat extraction. The feature is documented in the Features section and validated in thermal characterization curves (Fig. 11–13) of the SIDR610DP-T1-RE3 datasheet, improving power density in thermally constrained applications.

SIDR610DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 8.9A (Ta), 39.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 31.9mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1380 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8DC

SIDR610DP-T1-RE3 FAQ

1.How can I place an order for SIDR610DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDR610DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDR610DP-T1-RE3 reliable?

The price and inventory of SIDR610DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR610DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIDR610DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR610DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDR610DP-T1-RE3?

SIDR610DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDR610DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDR610DP-T1-RE3?

For technical support, including SIDR610DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR610DP-T1-RE3 requirements.

6.How does Aetrix verify that SIDR610DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIDR610DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR610DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIDR610DP-T1-RE3?

All SIDR610DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR610DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDR610DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIDR610DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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