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Vishay Siliconix SIDR610EP-T1-RE3
- Part No.:
- SIDR610EP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIDR610EP-T1-RE3.pdf
- Description:
- N-CHANNEL 200 V (D-S) 175C MOSFE
- Quantity:
- Payment:
- Shipping:
Inventory:5,992
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Product details
Overview
SIDR610EP-T1-RE3 from Vishay Siliconix is an N-channel 200 V, 39.6 A (TC = 25 °C) TrenchFET® MOSFET in PowerPAK® SO-8DC package, featuring RDS(on) = 0.0319 Ω at VGS = 10 V, Qg = 20 nC (typ.), and top-side cooling for enhanced thermal transfer-designed for primary/secondary side switching in telecom DC/DC converters.
For engineers reviewing the SIDR610EP-T1-RE3 datasheet, SIDR610EP-T1-RE3 pinout, SIDR610EP-T1-RE3 application, or SIDR610EP-T1-RE3 equivalent, this page delivers verified electrical specs, thermal resistance data (RthJC = 0.8 °C/W max), body diode characteristics (VSD = 0.77 V typ., trr = 100 ns), and validated alternative parts for high-voltage power conversion designs.
Technical Context
This MOSFET employs trench-based silicon architecture optimized for low RDS(on)–Qoss figure-of-merit (FOM), enabling high-efficiency switching in hard-switched and synchronous rectification topologies. Its gate threshold voltage (VGS(th) = 2–4 V) and transconductance (gfs = 27 S typ.) support robust drive margin with standard 7.5–10 V gate drivers.
The PowerPAK® SO-8DC package integrates exposed drain pads on both top and bottom surfaces, allowing dual-sided thermal management-critical for high-power density applications where case temperature exceeds 70 °C and steady-state RthJC must remain ≤1.0 °C/W to sustain 105 W dissipation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports primary-side switching in 48 V telecom and 100 V bus systems without derating |
| RDS(on) max @ 10 V | 0.0319 Ω - enables <1.3 W conduction loss at 20 A, critical for >95 % efficiency in 100–200 W DC/DC stages |
| Qg typ. | 20 nC - reduces gate drive power and allows use of low-current drivers (e.g., UCC27531) in isolated flyback controllers |
| ID continuous @ TC = 25 °C | 39.6 A - supports high-current secondary-side synchronous rectification without parallel devices |
| RthJC (drain) | 0.8 °C/W max - permits direct heatsink mounting to top-side drain pad, cutting junction-to-ambient path by ~40 % vs. standard SO-8 |
| VSD @ IS = 5 A | 0.77 V typ. - lowers forward drop in body-diode conduction during dead-time, reducing heat in Class D amplifiers |
| trr | 100 ns typ. - minimizes reverse recovery losses in hard-switched PFC and LLC resonant converters |
Pinout & Package
Package: PowerPAK® SO-8DC - leadless, dual-cooling surface-mount package with exposed drain terminals on top and bottom; dimensions 6.15 mm × 5.15 mm × 0.56 mm (L × W × H); RoHS-compliant, halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 (Top Drain) | Drain (D) | Exposed copper drain pad on top surface-enables direct thermal interface to heatsink or thermal pad, bypassing PCB vias |
| 4 | Gate (G) | Standard gate input; requires <20 nC charge for full enhancement-compatible with 3.3 V/5 V logic-level drivers when operated at VGS ≥ 7.5 V |
| 5, 6, 7 (Bottom Drain) | Drain (D) | Primary drain connection via bottom-side solder joint; provides mechanical anchoring and baseline thermal path to PCB |
| Source (S) | Source (S) | Internally connected to pins 1–3 and 8 on top, and pins 5–7 on bottom-forms Kelvin source return for accurate current sensing |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers lowest RDS(on)–Qoss FOM among 200 V discrete MOSFETs-reducing switching + conduction losses simultaneously |
| Top-side cooling | Enables thermal path from junction → top drain → heatsink, lowering effective RthJA by up to 30 % in constrained airflow environments |
| 100 % Rg tested | Guarantees gate resistance ≤ 4 Ω-ensures predictable turn-on/turn-off timing and eliminates risk of oscillation in high-dV/dt layouts |
| 100 % UIS tested | Validates ruggedness against unclamped inductive switching events up to 45 mJ-critical for motor drive and relay driver reliability |
| Optimized for VGS = 7.5 V operation | Supports industrial gate drivers (e.g., ADP3624) without level-shifting-reduces BOM count and layout complexity |
Applications
| Telecom DC/DC Converter | Class D Audio Amplifier |
|---|---|
Use Scenario: 48 V input, 12 V output isolated flyback converter in base station power supply. IC Role / Device Role / Timing Role: Primary-side switch operating at 200–300 kHz with 50 % duty cycle. Use Value: Low Qg (20 nC) and RDS(on) (0.0319 Ω) minimize switching and conduction losses, sustaining >93 % efficiency at full load. | Use Scenario: Half-bridge output stage in 100 W automotive audio amplifier. IC Role / Device Role / Timing Role: High-side and low-side switching element handling bidirectional current with fast body diode recovery. Use Value: 100 ns trr and 0.77 V VSD reduce crossover distortion and thermal stress during dead-time conduction. |
| Synchronous Rectifier | Industrial SMPS |
Use Scenario: Secondary-side rectification in 360 W LLC resonant converter for server PSU. IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by transformer-coupled gate signal. Use Value: 39.6 A continuous rating and Kelvin source configuration enable precise current sensing and zero-voltage switching (ZVS) compliance. | Use Scenario: Main switch in 200 W industrial AC/DC front-end with active PFC + LLC combo. IC Role / Device Role / Timing Role: Primary switch in boost PFC stage operating at 65–100 kHz. Use Value: 200 V VDS rating and 30 A single-pulse avalanche current (IAS) ensure safe operation under line surge and overload conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTP50N20P | TO-220 package, RDS(on) = 0.04 Ω, Qg = 42 nC, no top-side cooling | Larger footprint, higher gate drive loss, limited to lower-frequency (<100 kHz) designs due to higher Qg | Choose for cost-sensitive, non-space-constrained industrial supplies where thermal headroom exists. |
| IRF6642TRPBF | PowerSO-8 package, RDS(on) = 0.028 Ω, Qg = 24 nC, no top-side cooling, 150 °C TJ max | Lower RDS(on) but reduced thermal capability-unsuitable for sustained >85 °C case temperatures | Prefer for compact 12 V–24 V systems needing marginal RDS(on) improvement, not for 48 V telecom with high ambient. |
Compared with IXTP50N20P and IRF6642TRPBF, the SIDR610EP-T1-RE3 uniquely combines 200 V rating, top-side cooling, and 175 °C rated junction temperature-making it the only option capable of sustaining 39.6 A at TC = 70 °C in thermally dense telecom modules without forced air.
Availability
SIDR610EP-T1-RE3 is available at Aetrix Electronics and suitable for telecom DC/DC converters, Class D audio amplifiers, and industrial SMPS requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Vishay-authorized channels.
Supply support for SIDR610EP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on performance, reliability, and thermal innovation.
The SIDR610EP-T1-RE3 belongs to Vishay's PowerPAK® SO-8DC TrenchFET® family-engineered specifically for high-density, high-efficiency power conversion in telecom infrastructure and industrial power supplies where thermal management is critical.
FAQ
What is the maximum continuous drain current rating for SIDR610EP-T1-RE3 at 70 °C case temperature?
The SIDR610EP-T1-RE3 supports 33.1 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capacity at elevated case temperatures and is validated under steady-state conditions with proper PCB copper area and top-side cooling implementation. The SIDR610EP-T1-RE3 maintains full 39.6 A rating only at TC = 25 °C.
Does SIDR610EP-T1-RE3 support gate drive voltages below 10 V, and what is its RDS(on) at 7.5 V?
Yes, the SIDR610EP-T1-RE3 is fully characterized for 7.5 V gate drive: RDS(on) max is 0.0334 Ω at VGS = 7.5 V and ID = 10 A. Its VGS(th) range (2–4 V) ensures reliable enhancement with industry-standard 7.5 V gate drivers like the UCC27531, avoiding the need for external level shifters in many isolated control architectures using the SIDR610EP-T1-RE3.
How does the top-side cooling feature of SIDR610EP-T1-RE3 improve thermal performance compared to standard SO-8 packages?
The top-side cooling feature of the SIDR610EP-T1-RE3 exposes the drain terminal on the package top surface, enabling direct thermal interface to a heatsink or thermal pad-bypassing the PCB's thermal resistance. This reduces effective RthJA by up to 30 % and allows the SIDR610EP-T1-RE3 to dissipate 105 W at TC = 70 °C, whereas standard SO-8 devices typically max out near 3 W in still air. The SIDR610EP-T1-RE3 achieves RthJC = 0.8 °C/W (drain), making it viable for high-power density telecom modules.
Is SIDR610EP-T1-RE3 suitable for synchronous rectification in LLC resonant converters, and what body diode parameters support this?
Yes, the SIDR610EP-T1-RE3 is qualified for synchronous rectification in LLC resonant converters. Its body diode exhibits VSD = 0.77 V (typ.) at IS = 5 A and trr = 100 ns (typ.) at IF = 10 A, dI/dt = 100 A/μs-minimizing dead-time conduction loss and reverse recovery ringing. These parameters, combined with 39.6 A continuous source current rating, make the SIDR610EP-T1-RE3 effective in high-frequency, high-efficiency secondary-side switching where the SIDR610EP-T1-RE3 replaces Schottky diodes.
What is the avalanche energy rating of SIDR610EP-T1-RE3, and how is it validated in production?
The SIDR610EP-T1-RE3 is rated for 45 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH, and 100 % of units undergo UIS (Unclamped Inductive Switching) testing per production lot. This validation ensures robustness against transient overvoltage events such as transformer leakage spikes or load dump in industrial power supplies-confirming that each SIDR610EP-T1-RE3 can safely absorb defined inductive energy without failure, a key reliability requirement for mission-critical SIDR610EP-T1-RE3 deployments.
SIDR610EP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.9A (Ta), 39.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 31.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1380 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 7.5W (Ta), 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8DC
SIDR610EP-T1-RE3 FAQ
1.How can I place an order for SIDR610EP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDR610EP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDR610EP-T1-RE3 reliable?
The price and inventory of SIDR610EP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR610EP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIDR610EP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR610EP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDR610EP-T1-RE3?
SIDR610EP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDR610EP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDR610EP-T1-RE3?
For technical support, including SIDR610EP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR610EP-T1-RE3 requirements.
6.How does Aetrix verify that SIDR610EP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIDR610EP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR610EP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIDR610EP-T1-RE3?
All SIDR610EP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR610EP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDR610EP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIDR610EP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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