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Vishay Siliconix SIDR622DP-T1-GE3
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- Part No.:
- SIDR622DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIDR622DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 150V 64.6A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,894
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Product details
Overview
SIDR622DP-T1-GE3 from Vishay Siliconix is an N-channel 150 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8DC package, rated for 56.7 A continuous drain current at TC = 25 °C, with RDS(on) of 0.0177 Ω at VGS = 10 V and total gate charge of 20.7 nC. It supports high-power-density DC/DC conversion and synchronous rectification in industrial and computing power supplies.
For engineers reviewing the SIDR622DP-T1-GE3 datasheet, SIDR622DP-T1-GE3 pinout, SIDR622DP-T1-GE3 application, or SIDR622DP-T1-GE3 equivalent, key selection criteria include its top-side cooling capability, 150 V VDS rating, low RDS(on) at 7.5 V gate drive, avalanche energy rating of 80 mJ, and suitability for H-bridge motor control and primary-side switching.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Qgd/Qgs ratio. Its dual-cooling design enables thermal transfer from both top and bottom surfaces, improving power handling in constrained layouts.
The device features 100 % Rg and UIS tested units, guaranteed gate-source threshold voltage (2.5–4.5 V), and robust body diode performance (trr = 114 ns typ., Qrr = 350 nC typ.)-critical for synchronous rectifier efficiency and reverse recovery management in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - Withstands up to 150 V drain-source blocking voltage, suitable for 48 V and 60 V bus systems with margin. |
| RDS(on) max @ VGS = 10 V | 0.0177 Ω - Enables <1.8 W conduction loss at 20 A, supporting high-efficiency power stages. |
| Qg typ. | 20.7 nC - Low gate charge reduces driver power demand and switching losses in high-frequency operation. |
| ID (TC = 25 °C) | 56.7 A - Continuous current rating under heatsink-cooled conditions, enabling compact high-current designs. |
| EAS | 80 mJ - Single-pulse avalanche energy rating ensures ruggedness during transient overvoltage events. |
| RthJC (drain) | 0.8 °C/W typical - Low junction-to-case thermal resistance supports efficient heat extraction via PCB copper or heatsink. |
| VGS(th) | 2.5–4.5 V - Gate threshold range compatible with standard 5 V and 3.3 V logic-level drivers. |
Pinout & Package
Package: PowerPAK® SO-8DC - leadless surface-mount package with exposed drain paddle on bottom and top-side thermal pad; dimensions 6.15 mm × 5.15 mm × 0.56 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 | Source (S) | Common source connection; pins 1, 2, 3, and 8 are internally tied to source terminal and provide parallel current paths and thermal conduction. |
| 4 | Gate (G) | Control input; requires ≤ ±20 V gate drive; low Rg (0.8–3.5 Ω) minimizes ringing and EMI risk. |
| 5, 6, 7, D-Pad | Drain (D) | Main power output node; all drain pins plus large bottom-exposed copper paddle form low-inductance, high-current path with enhanced thermal dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers optimized RDS(on) × Qg figure-of-merit for high-frequency switching efficiency in DC/DC converters. |
| Top-side cooling capability | Enables thermal transfer from component top surface-critical for stacked or confined board layouts where bottom-side heatsinking is limited. |
| 100 % Rg and UIS tested | Ensures gate robustness and unclamped inductive switching reliability across production lots-no screening failures in harsh load dump or inductive turn-off. |
| Low Crss / Ciss ratio | Crss = 10.5 pF, Ciss = 1516 pF → low Miller effect improves gate drive stability and dV/dt immunity in high-side configurations. |
| Body diode trr = 114 ns typ. | Reduces reverse recovery losses and associated voltage spikes in synchronous rectifier applications operating above 100 kHz. |
Applications
| Synchronous Rectification | Primary-Side Switching |
|---|---|
Use Scenario: Used as secondary-side switch in isolated LLC or phase-shifted full-bridge DC/DC converters for server and telecom power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction losses and improve efficiency at high currents. Use Value: Achieves >95 % efficiency at 50 A output with 0.0177 Ω RDS(on), cutting rectifier losses by ~40 % vs. 40 V Schottky diodes. | Use Scenario: High-side switch in active clamp forward or asymmetrical half-bridge topologies for industrial 48 V input power modules. IC Role / Device Role / Timing Role: Primary-side power switch handling 150 V bus transients and delivering up to 56.7 A peak current per pulse. Use Value: Withstands 80 mJ single-pulse avalanche energy and operates reliably under 100 μs pulsed ID = 100 A stress. |
| H-Bridge Motor Drive | High-Power-Density DC/DC |
Use Scenario: Half-bridge leg in 24–48 V brushed DC or BLDC motor controllers for robotics and automated guided vehicles. IC Role / Device Role / Timing Role: N-channel high- and low-side switch in complementary pair configuration with bootstrap gate drive. Use Value: Fast switching (td(on) = 13 ns, tf = 6 ns) and low Qgd enable clean commutation at PWM frequencies up to 200 kHz. | Use Scenario: Main switch in 1/8-brick or quarter-brick isolated DC/DC converters targeting >1 kW/in³ power density. IC Role / Device Role / Timing Role: Primary-side switching element optimized for ZVS or soft-switching operation with low Coss (236 pF) and Qoss (60 nC). Use Value: Dual-cooling structure allows 125 W PD at TC = 25 °C-enabling smaller heatsinks and higher packing density than SO-8 equivalents. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6642TRPBF | RDS(on) = 0.022 Ω @ 10 V; Qg = 22 nC; same PowerSO-8 package but no top-side cooling. | Lacks top-side thermal path-requires larger PCB copper area for equivalent thermal performance. | Prefer when legacy layout compatibility is critical and thermal headroom exists. |
| IXTP110N15T | TO-220 package; RDS(on) = 0.011 Ω @ 10 V; higher ID = 110 A; no integrated body diode optimization. | Requires mechanical mounting and heatsink; unsuitable for ultra-thin or double-sided assembly. | Choose for highest current handling where board space permits discrete heatsinking. |
Compared with IRF6642TRPBF and IXTP110N15T, SIDR622DP-T1-GE3 uniquely combines low RDS(on), low Qg, top-side cooling, and optimized body diode for high-frequency, high-density power conversion-making it preferred for space-constrained, thermally demanding synchronous rectifier and primary-switch roles.
Availability
SIDR622DP-T1-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC/DC converters, and automotive auxiliary power modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIDR622DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.
The PowerPAK® SO-8DC product line was developed to deliver high-current, high-voltage MOSFET performance in ultra-thin, dual-cooled surface-mount packages for next-generation power supplies and motor controllers.
FAQ
What is the maximum continuous drain current rating for SIDR622DP-T1-GE3 at TC = 70 °C?
The SIDR622DP-T1-GE3 has a continuous drain current rating of 45.3 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limits under real-world heatsink conditions and must be used for thermal design validation-not the 56.7 A rating at TC = 25 °C. The SIDR622DP-T1-GE3 datasheet confirms this value applies under steady-state junction temperature constraints.
Does SIDR622DP-T1-GE3 support gate drive from a 5 V microcontroller without level shifting?
Yes, SIDR622DP-T1-GE3 supports 5 V gate drive: its VGS(th) range is 2.5–4.5 V, and RDS(on) remains low (0.0204 Ω max at VGS = 7.5 V). At 5 V, it delivers usable on-state performance-though not fully enhanced-making it compatible with many 5 V logic outputs. The SIDR622DP-T1-GE3 datasheet specifies ID(on) ≥ 50 A at VGS = 10 V, confirming strong enhancement above threshold.
How does the top-side cooling feature of SIDR622DP-T1-GE3 improve thermal performance?
The top-side cooling feature of SIDR622DP-T1-GE3 uses an exposed copper thermal pad on the package top surface to conduct heat directly to a heatsink or adjacent metal layer, supplementing bottom-side conduction. This reduces effective RthJA by up to 30 % in constrained airflow environments. The SIDR622DP-T1-GE3 datasheet notes this provides "additional venue for thermal transfer," critical for high-power-density applications where PCB copper area is limited.
Is SIDR622DP-T1-GE3 suitable for avalanche-rated applications like inductive load switching?
Yes, SIDR622DP-T1-GE3 is rated for single-pulse avalanche energy (EAS) of 80 mJ and single-pulse avalanche current (IAS) of 40 A, making it suitable for controlled inductive switching applications such as motor drive freewheeling or relay driving. These values are production-tested per datasheet note "100 % Rg and UIS tested." The SIDR622DP-T1-GE3 specification sheet explicitly lists these parameters under Absolute Maximum Ratings.
What is the body diode reverse recovery time (trr) of SIDR622DP-T1-GE3, and why does it matter in synchronous rectification?
The body diode reverse recovery time (trr) of SIDR622DP-T1-GE3 is 114 ns typical at TJ = 25 °C (IF = 20 A, di/dt = 100 A/μs). In synchronous rectification, low trr minimizes reverse recovery losses and voltage overshoot during dead-time transitions-directly improving efficiency and reducing EMI. The SIDR622DP-T1-GE3 datasheet confirms trr and Qrr (350 nC typ.) are characterized and optimized for this use case.
SIDR622DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 56.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 17.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1516 pF @ 75 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.25W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8DC
SIDR622DP-T1-GE3 FAQ
1.How can I place an order for SIDR622DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDR622DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDR622DP-T1-GE3 reliable?
The price and inventory of SIDR622DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR622DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIDR622DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR622DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDR622DP-T1-GE3?
SIDR622DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDR622DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDR622DP-T1-GE3?
For technical support, including SIDR622DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR622DP-T1-GE3 requirements.
6.How does Aetrix verify that SIDR622DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIDR622DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR622DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIDR622DP-T1-GE3?
All SIDR622DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR622DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDR622DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIDR622DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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