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Vishay Siliconix SIDR622DP-T1-RE3
- Part No.:
- SIDR622DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIDR622DP-T1-RE3.pdf
- Description:
- N-CHANNEL 150-V (D-S) MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:8,899
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Product details
Overview
SIDR622DP-T1-RE3 from Vishay Siliconix is an N-channel 150 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8DC package, rated for 56.7 A continuous drain current at TC = 25 °C, with RDS(on) of 0.0177 Ω at VGS = 10 V and 20.7 nC total gate charge. It supports high-power-density DC/DC converters and H-bridge motor drive control with top-side cooling capability.
For engineers reviewing the SIDR622DP-T1-RE3 datasheet, SIDR622DP-T1-RE3 pinout, SIDR622DP-T1-RE3 application, or SIDR622DP-T1-RE3 equivalent, key selection criteria include its 150 V VDS rating, low RDS(on) at 7.5 V gate drive, thermal performance under top-side cooling, and suitability for synchronous rectification and primary-side switching in industrial and automotive power systems.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with Qg = 20.7 nC (VGS = 7.5 V) and tr/tf ≤ 14 ns. Its dual-cooling design enables heat dissipation through both drain (case) and source terminals, supporting high-current operation without external heatsinks in constrained layouts.
The device features 100 % Rg and UIS tested reliability, a gate-source threshold voltage range of 2.5–4.5 V, and body diode characteristics including VSD = 0.77–1.1 V at IS = 5 A and trr = 114–225 ns - enabling efficient freewheeling in bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - maximum drain-source blocking voltage for primary-side switch or high-side synchronous rectifier in 48 V–100 V bus systems |
| RDS(on) max @ VGS = 10 V | 0.0177 Ω - enables <1.8 W conduction loss at 20 A, critical for thermally limited DC/DC modules |
| RDS(on) max @ VGS = 7.5 V | 0.0204 Ω - ensures robust on-state performance with standard 7.5 V gate drivers, reducing gate driver complexity |
| Qg typ. | 20.7 nC - low gate charge minimizes switching losses and driver power requirements in high-frequency (>300 kHz) converters |
| ID (TC = 25 °C) | 56.7 A - continuous current rating with case temperature monitoring, supporting high-current motor phase legs or power supply outputs |
| RthJC (drain) | 0.8–1.0 °C/W - low junction-to-case thermal resistance enables direct PCB copper thermal spreading to internal ground planes |
| Body diode trr | 114–225 ns - fast reverse recovery supports zero-voltage switching (ZVS) in resonant topologies and reduces EMI in H-bridges |
Pinout & Package
Package: PowerPAK® SO-8DC - leadless, double-sided cooling package with exposed drain (top and bottom), 5.00 mm × 6.00 mm footprint, 0.56 mm height. Optimized for high-current thermal management via both top-side and bottom-side PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 | Source (S) | Common source connection for internal parallel die; low-inductance return path for high di/dt switching |
| 4 | Gate (G) | Single gate input with Rg = 0.8–3.5 Ω; compatible with standard 5–10 V logic-level drivers |
| 5, 6, 7 | Drain (D) | Exposed drain pad (top and bottom); primary thermal and current path to PCB copper pour or heatsink |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 0.0177 Ω RDS(on) at 10 V while maintaining rugged 150 V breakdown, reducing conduction loss by >25 % vs. planar alternatives |
| Top-side cooling | Exposed drain on top surface allows direct thermal interface to metal enclosure or heatsink, increasing total power handling by up to 40 % |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and avalanche energy tolerance (EAS = 80 mJ), critical for unregulated input stages |
| Low Qgd / Qgs ratio | Qgd = 8.2 nC, Qgs = 9.2 nC → Miller ratio ~0.89; improves hard-switching immunity and reduces risk of spurious turn-on in high-dV/dt environments |
| Body diode softness (Qrr = 350–680 nC) | Controlled reverse recovery minimizes voltage overshoot during commutation, easing snubber design in motor drives and LLC converters |
Applications
| Server VRM Synchronous Rectifier | Industrial H-Bridge Motor Driver |
|---|---|
Use Scenario: High-efficiency 48 V input buck converter supplying CPU core voltage in data center servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve thermal margin. Use Value: 0.0177 Ω RDS(on) cuts rectifier loss by >60 % vs. 40 V Schottky, enabling >95 % efficiency at 100 A output with no forced air cooling. |
Use Scenario: 24–48 V brushed DC motor control in automated guided vehicles (AGVs) with regenerative braking. IC Role / Device Role / Timing Role: High-current quadrant-switching MOSFET in half-bridge leg, conducting bidirectional current during PWM and regeneration. Use Value: 60 A continuous source-drain diode current and 114 ns trr support clean freewheeling and fast current reversal, minimizing torque ripple and brake energy loss. |
| Telecom DC/DC Primary Switch | EV Onboard Charger PFC Stage |
Use Scenario: 300–400 V boost PFC front-end in telecom rectifiers operating at 100–300 kHz. IC Role / Device Role / Timing Role: Fast-switching, high-VDS primary switch with low Qg and Coss for high-frequency operation. Use Value: 20.7 nC Qg and 236 pF Coss enable <25 ns turn-off delay and low capacitive switching loss, sustaining >98 % efficiency at full load. |
Use Scenario: Interleaved totem-pole PFC stage in 6.6 kW EV onboard charger using SiC gate drivers. IC Role / Device Role / Timing Role: Complementary N-channel switch in active rectifier topology, requiring low RDS(on) and robust body diode. Use Value: 0.0204 Ω RDS(on) at 7.5 V gate drive matches typical SiC driver output, while 80 mJ EAS withstands line transients without clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6642TRPBF | RDS(on) = 0.022 Ω @ 10 V; Qg = 22 nC; same PowerSO-8 package but no top-side cooling | Lacks top-side thermal path - requires larger PCB copper area or heatsink for equivalent power handling | Preferred where board space permits extended bottom-side thermal pads and gate drive voltage is stable at ≥10 V |
| SiR622DP-T1-RE3 | Same die, identical specs, but RoHS-compliant halogen-free marking per Vishay's revision control (RE3 vs GE3) | No functional difference; RE3 denotes latest material compliance version with identical electrical and thermal behavior | Direct replacement for legacy GE3 builds; no requalification needed for new designs targeting IEC 61249-2-21 compliance |
Compared with IRF6642TRPBF, SIDR622DP-T1-RE3 delivers lower conduction loss and superior thermal headroom via top-side cooling; compared with SiR622DP-T1-RE3, it is functionally identical but reflects updated Vishay part numbering for tape-and-reel packaging consistency.
Availability
SIDR622DP-T1-RE3 is available at Aetrix Electronics and suitable for high-power-density DC/DC converters, industrial motor drives, and telecom power supplies requiring stable component supply and long-term production continuity.
Supply support for SIDR622DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
SIDR622DP-T1-RE3 belongs to Vishay's PowerPAK® SO-8DC TrenchFET® family, engineered specifically for high-current, high-efficiency power conversion where thermal density and switching speed are critical - such as server VRMs, industrial inverters, and EV charging systems.
FAQ
What is the maximum continuous drain current rating for SIDR622DP-T1-RE3?
The SIDR622DP-T1-RE3 is rated for 56.7 A continuous drain current at TC = 25 °C, and 45.3 A at TC = 70 °C. This rating assumes proper PCB thermal management via both top-side and bottom-side copper connections, as specified in the PowerPAK® SO-8DC layout guidelines. Derating curves confirm usable current up to 64.6 A at TA = 25 °C with adequate ambient cooling.
Does SIDR622DP-T1-RE3 support gate drive voltages below 10 V?
Yes, SIDR622DP-T1-RE3 is fully characterized down to VGS = 7.5 V, with RDS(on) max = 0.0204 Ω and Qg typ = 20.7 nC. Its gate-threshold voltage range of 2.5–4.5 V ensures reliable turn-on with standard 5 V or 7.5 V controllers. However, gate drive must remain within ±20 V absolute maximum to avoid damage.
How does the top-side cooling feature of SIDR622DP-T1-RE3 improve thermal performance?
The top-side cooling feature of SIDR622DP-T1-RE3 uses an exposed drain pad on the package's upper surface, allowing direct thermal interface to a metal shield, heatsink, or cold plate. This reduces effective RthJA by up to 30 % versus bottom-only cooling, enabling higher sustained power output - especially valuable in sealed enclosures or multi-layer boards with limited bottom-side thermal access.
Is SIDR622DP-T1-RE3 suitable for synchronous rectification in LLC resonant converters?
Yes, SIDR622DP-T1-RE3 is well-suited for synchronous rectification in LLC converters due to its fast body diode (trr = 114–225 ns), low Qrr (350–680 nC), and low RDS(on). These parameters minimize reverse recovery loss and conduction loss during ZVS transitions, improving overall efficiency and reducing EMI compared to Schottky solutions - particularly at 200–500 kHz operating frequencies.
What is the avalanche energy rating for SIDR622DP-T1-RE3?
SIDR622DP-T1-RE3 is rated for 80 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH, and supports 40 A single-pulse avalanche current (IAS). These ratings are validated per JEDEC JESD24-1 and reflect ruggedness against inductive switching transients - essential for primary-side switching in flyback or forward converters where voltage spikes may exceed VDS rating.
SIDR622DP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 56.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 17.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1516 pF @ 75 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.25W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8DC
SIDR622DP-T1-RE3 FAQ
1.How can I place an order for SIDR622DP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDR622DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDR622DP-T1-RE3 reliable?
The price and inventory of SIDR622DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR622DP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SIDR622DP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR622DP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDR622DP-T1-RE3?
SIDR622DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDR622DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDR622DP-T1-RE3?
For technical support, including SIDR622DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR622DP-T1-RE3 requirements.
6.How does Aetrix verify that SIDR622DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SIDR622DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR622DP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SIDR622DP-T1-RE3?
All SIDR622DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR622DP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDR622DP-T1-RE3 part is unused and in its original packaging.
Return procedure for SIDR622DP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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