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Vishay Siliconix SIDR626DP-T1-GE3
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- Part No.:
- SIDR626DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SIDR626DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 60V 42.8A/100A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,872
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Product details
Overview
SIDR626DP-T1-GE3 from Vishay Siliconix is an N-channel 60 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8DC package, delivering RDS(on) = 1.7 mΩ at VGS = 10 V, Qg = 52 nC (typ.), and 100 A continuous drain current (TC = 25 °C), optimized for high-efficiency synchronous rectification and primary-side switching in DC/DC converters.
For engineers reviewing the SIDR626DP-T1-GE3 datasheet, SIDR626DP-T1-GE3 pinout, SIDR626DP-T1-GE3 application, or SIDR626DP-T1-GE3 equivalent, key selection criteria include its low RDS(on)–Qoss figure-of-merit, top-side cooling capability, 100 % Rg and UIS testing, and thermal resistance RthJC(drain) = 0.8 °C/W (typ.) for high-power density designs.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low conduction and switching losses, with a tuned RDS(on)–Qoss FOM critical for high-frequency hard-switched and resonant topologies. Its gate threshold voltage (VGS(th) = 2.0–3.4 V) and low gate resistance (Rg = 0.3–1.6 Ω) support robust drive compatibility with standard 5 V and 10 V controllers.
The PowerPAK® SO-8DC package features exposed copper drain pads on both top and bottom surfaces, enabling dual-sided thermal management-top-side cooling via heatsink contact and bottom-side solder attachment-while maintaining a compact 5.0 × 6.0 mm footprint compatible with SO-8 layout footprints but with enhanced thermal performance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage suitable for 48 V bus and solar microinverter primary-side applications |
| RDS(on) max. @ VGS = 10 V | 1.7 mΩ - Enables <1.7 W conduction loss at 100 A, critical for high-current synchronous rectifiers |
| Qg typ. | 52 nC - Low gate charge reduces driver power demand and switching transition time in 100–500 kHz converters |
| ID continuous (TC = 25 °C) | 100 A - High current rating supports single-device solutions in motor drives and battery switches without paralleling |
| RthJC (drain) | 0.8 °C/W (typ.) - Enables >100 W power dissipation with modest heatsinking, supporting high-density industrial power stages |
| VGS(th) | 2.0–3.4 V - Ensures reliable turn-on with standard logic-level gate drivers while minimizing shoot-through risk |
| Ciss | 5130 pF - Predictable input capacitance simplifies gate drive loop stability analysis in high-speed switching |
Pinout & Package
Package: PowerPAK® SO-8DC - leadless, dual-cooling surface-mount package with exposed copper drain terminals on top and bottom surfaces; dimensions 5.00 × 6.00 × 0.56 mm (L × W × H); RoHS-compliant, halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (Top-side drain pad) | Drain (D) | Primary high-current path; thermally connected to heatsink via top-side copper for enhanced cooling |
| 5, 6, 7, 8 (Bottom-side drain pad) | Drain (D) | High-current return path and primary thermal interface to PCB; enables bottom-side heat extraction |
| 4 (Side terminal) | Source (S) | Low-inductance source connection; used for Kelvin sensing or low-side current monitoring |
| 1 (Side terminal) | Gate (G) | Control input; isolated from drain by low Crss (94 pF) to minimize Miller-induced turn-on in high-dV/dt environments |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers industry-leading RDS(on)–Qoss FOM for reduced switching + conduction loss trade-off in high-frequency SMPS |
| Top-side cooling capability | Enables thermal path through exposed top drain pad, increasing total power handling beyond bottom-only packages |
| 100 % Rg and UIS tested | Guarantees gate robustness and avalanche energy handling (EAS = 125 mJ) for reliable operation under transient overloads |
| Low Qgd/Qg ratio (≈0.16) | Reduces Miller plateau duration and improves controllability during hard switching, lowering Eoff |
| Body diode trr = 54 ns (typ.) | Minimizes reverse recovery loss and associated ringing in synchronous rectifier and LLC resonant applications |
Applications
| Synchronous Rectification | Primary-Side Switching |
|---|---|
Use Scenario: Used as secondary-side switch in isolated DC/DC converters (e.g., 48 V–12 V telecom PSUs) operating at 200–500 kHz. IC Role / Device Role: N-channel MOSFET replacing Schottky diode to reduce forward conduction loss and improve efficiency. Use Value: Achieves >96 % efficiency at full load due to RDS(on) = 1.7 mΩ and fast body diode recovery (trr = 54 ns). |
Use Scenario: Primary-side high-side switch in non-isolated buck converters or half-bridge inverters for solar microinverters. IC Role / Device Role: Main power switching element handling up to 100 A peak current at 60 V bus. Use Value: Supports high power density with RthJC = 0.8 °C/W and top/bottom thermal paths, enabling compact heatsink integration. |
| Motor Drive Half-Bridge | Battery Load Switch |
Use Scenario: Low-side switch in 24–48 V BLDC motor gate drivers for industrial automation systems. IC Role / Device Role: High-current, low-RDS(on) switch controlling phase current with minimal I²R heating. Use Value: Sustains 100 A continuous current at TC = 25 °C, eliminating need for paralleling in mid-power motor drives. |
Use Scenario: High-side load switch in 48 V battery management systems for EV auxiliary loads or UPS systems. IC Role / Device Role: Solid-state replacement for mechanical relay or fuse, providing controlled inrush and short-circuit protection. Use Value: Withstands 200 A pulsed drain current (IDM) and 50 A single-pulse avalanche current (IAS), ensuring robust fault tolerance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1407PBF | RDS(on) = 4.8 mΩ @ 10 V; Qg = 110 nC; TO-220 package; no top-side cooling | Higher conduction loss and larger footprint; suited for lower-frequency, lower-density designs where thermal budget allows | Choose when board space permits TO-220 and cost sensitivity outweighs efficiency gains of SIDR626DP-T1-GE3 |
| SIDR624DP-T1-GE3 | RDS(on) = 2.0 mΩ @ 10 V; Qg = 42 nC; identical PowerPAK SO-8DC package and pinout | Nearly identical thermal and layout compatibility; slightly higher RDS(on) trades off minimal conduction loss for lower gate charge | Prefer for ultra-high-frequency (>1 MHz) applications where Qg reduction outweighs marginal RDS(on) increase |
Compared with IRF1407PBF, SIDR626DP-T1-GE3 delivers 65 % lower RDS(on) and 53 % lower Qg in a surface-mount package with dual thermal paths-enabling smaller magnetics, higher efficiency, and better thermal headroom. Against SIDR624DP-T1-GE3, it offers lower conduction loss at the cost of slightly higher gate drive energy, making it optimal for medium-frequency, high-current applications.
Availability
SIDR626DP-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, primary-side switching, and motor drive applications requiring stable component supply, long-term industrial lifecycle support, and consistent parametric performance across production batches.
Supply support for SIDR626DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and thermal innovation.
The SIDR626DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8DC family, engineered specifically for high-current, high-frequency power conversion in space-constrained industrial, solar, and automotive-qualified systems.
FAQ
What is the maximum continuous drain current rating for SIDR626DP-T1-GE3 at 70 °C case temperature?
The SIDR626DP-T1-GE3 supports 100 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects its robust thermal design and low RthJC = 0.8 °C/W (typ.), enabling sustained high-current operation without derating in well-heatsinked configurations. The SIDR626DP-T1-GE3 maintains this current level up to TC = 70 °C before linear derating begins.
Does SIDR626DP-T1-GE3 support gate drive from a 5 V controller?
Yes, the SIDR626DP-T1-GE3 is fully compatible with 5 V gate drive: its VGS(th) range is 2.0–3.4 V, and RDS(on) is specified down to 2.6 mΩ at VGS = 6 V. At 5 V, typical RDS(on) remains below 3.5 mΩ, ensuring efficient operation in logic-level driven circuits. The SIDR626DP-T1-GE3 does not require 10 V for functional turn-on, though full 1.7 mΩ performance requires ≥10 V.
How is thermal management implemented in the PowerPAK SO-8DC package of SIDR626DP-T1-GE3?
The SIDR626DP-T1-GE3 uses a dual-cooling architecture: the drain is exposed on both top and bottom surfaces of the PowerPAK SO-8DC package. Bottom-side copper connects to PCB thermal pads for standard conduction cooling, while the top-side drain pad allows direct heatsink mounting-effectively doubling thermal transfer area. This design achieves RthJC(drain) = 0.8 °C/W (typ.), significantly outperforming conventional SO-8 packages. The SIDR626DP-T1-GE3 leverages both paths simultaneously for optimal junction-to-ambient thermal resistance.
Is SIDR626DP-T1-GE3 suitable for avalanche-rated applications?
Yes, the SIDR626DP-T1-GE3 is 100 % tested for Unclamped Inductive Switching (UIS) and rated for single-pulse avalanche energy EAS = 125 mJ and avalanche current IAS = 50 A (L = 0.1 mH). These validated ratings make it suitable for inductive load switching, flyback snubbers, and other applications subject to voltage transients. The SIDR626DP-T1-GE3 datasheet confirms avalanche ruggedness as a production-tested parameter-not just a design limit.
What is the body diode forward voltage of SIDR626DP-T1-GE3 at 5 A and room temperature?
The body diode forward voltage (VSD) of the SIDR626DP-T1-GE3 is 0.72 V (typ.) and 1.1 V (max.) at IS = 5 A and VGS = 0 V, per the "Drain-Source Body Diode Characteristics" section. This low VSD, combined with trr = 54 ns (typ.), minimizes conduction and recovery losses during synchronous rectification dead-time intervals. The SIDR626DP-T1-GE3 body diode performance is integral to its use in high-efficiency DC/DC topologies.
SIDR626DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 42.8A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 102 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5130 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.25W (Ta), 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8DC
SIDR626DP-T1-GE3 FAQ
1.How can I place an order for SIDR626DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDR626DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDR626DP-T1-GE3 reliable?
The price and inventory of SIDR626DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR626DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIDR626DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR626DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDR626DP-T1-GE3?
SIDR626DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDR626DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDR626DP-T1-GE3?
For technical support, including SIDR626DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR626DP-T1-GE3 requirements.
6.How does Aetrix verify that SIDR626DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIDR626DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR626DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIDR626DP-T1-GE3?
All SIDR626DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR626DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDR626DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SIDR626DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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