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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIDR626LDP-T1-RE3

Name: SIDR626LDP-T1-RE3
Brand: Vishay Siliconix
SKU: SIDR626LDP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIDR626LDP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIDR626LDP-T1-RE3.pdf

Description:: MOSFET N-CH 60V 45.6A/2.4A PPAK

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Product details

Overview

SIDR626LDP-T1-RE3 from Vishay Siliconix is an N-channel 60 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8DC package, delivering R_DS(on) = 1.5 mΩ at V_GS = 10 V and 2.1 mΩ at V_GS = 4.5 V, with 41 nC total gate charge (Q_g) and 204 A continuous drain current (I_D). It serves as a high-efficiency primary-side switch or synchronous rectifier in high-current DC/DC converters.

For engineers reviewing the SIDR626LDP-T1-RE3 datasheet, SIDR626LDP-T1-RE3 pinout, SIDR626LDP-T1-RE3 application, or SIDR626LDP-T1-RE3 equivalent, key selection criteria include its top-side cooling capability, ultra-low R_DS(on)–Q_oss figure-of-merit, 100% R_g and UIS testing, and suitability for solar micro-inverter and motor drive switching where thermal performance and fast switching are critical.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology optimized for low conduction loss and minimized switching energy. Its R_DS(on)–Q_oss FOM is tuned to reduce turn-off losses in hard-switched topologies, while the PowerPAK SO-8DC package enables dual-side thermal transfer-top-side copper pad and bottom-side drain terminals-for enhanced heat dissipation under high-power operation.

The device features a body diode with t_rr = 54 ns (typ.) and Q_rr = 70 nC (typ.) at I_F = 20 A, supporting efficient synchronous rectification. Gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.5 V, enabling robust 4.5 V logic-level drive compatibility without requiring gate boosters in many industrial and renewable energy applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; suitable for 48 V input systems and 60 V bus architectures.
R_DS(on) @ 10 V	1.5 mΩ max - Enables <1 W conduction loss at 200 A, critical for high-current power stages.
R_DS(on) @ 4.5 V	2.1 mΩ max - Ensures full enhancement with standard 5 V logic drivers, eliminating need for level shifters.
Q_g	41 nC typ. - Low gate charge reduces driver power and switching transition time in high-frequency converters.
I_D (T_C = 25 °C)	204 A - Continuous drain current rating based on case temperature; supports high-current battery/load switches.
R_thJC (Drain)	0.8 °C/W typ. - Low junction-to-case thermal resistance enables direct heatsinking to PCB copper or external cooler.
V_SD	0.71 V typ. - Low source-drain diode forward voltage minimizes reverse recovery loss in synchronous rectification.

Pinout & Package

Package: PowerPAK® SO-8DC - leadless, double-cooling surface-mount package with exposed drain pads on both top and bottom surfaces for enhanced thermal management. Dimensions: 6.00 mm × 5.00 mm × 0.56 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Multiple parallel drain terminals provide low-inductance, high-current path and dual-side thermal conduction.
5	Gate (G)	Single gate input with R_g = 0.88 Ω (typ.); optimized for low ringing and stable 4.5 V–10 V drive.
6	Source (S)	Source terminal tied to internal source metallization; used for gate drive reference and current sensing return.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers industry-leading R_DS(on)–Q_oss FOM for reduced switching loss in high-frequency DC/DC stages.
Top-side cooling structure	Exposed copper drain pad on top surface allows direct thermal interface to heatsink or thermal pad, lowering system thermal resistance by up to 30 %.
100 % R_g and UIS tested	Ensures gate robustness against transient overvoltage and ruggedness under unclamped inductive switching stress.
Low V_GS(th) variation	ΔV_GS(th)/T_J = −4.9 mV/°C ensures stable turn-on behavior across −55 °C to +150 °C operating range.
Optimized body diode	t_rr = 54 ns and Q_rr = 70 nC enable clean commutation in synchronous rectifiers without snubbers.

Applications

Solar Micro Inverter	Industrial Motor Drive
Use Scenario: High-efficiency DC–AC conversion in distributed photovoltaic systems with compact form factor and passive cooling. IC Role / Device Role / Timing Role: Primary-side high-side switch in interleaved half-bridge topology operating at 100–200 kHz. Use Value: Ultra-low R_DS(on) and Q_g minimize conduction and switching losses, achieving >98.5 % peak efficiency at 300 W per channel.	Use Scenario: Three-phase inverter stage for servo and BLDC motors in factory automation equipment. IC Role / Device Role / Timing Role: Low-side switching element in 60 V rail systems with PWM frequencies up to 40 kHz. Use Value: 204 A I_D rating and 0.8 °C/W R_thJC allow sustained 150 A output without forced air, reducing heatsink size by 40 %.
Server VRM / POL Converter	Battery Protection Switch
Use Scenario: Point-of-load regulation in AI accelerator racks requiring fast transient response and <10 mΩ total path resistance. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter with 30–500 kHz operation. Use Value: 2.1 mΩ R_DS(on) @ 4.5 V enables direct drive from controller's integrated gate driver, eliminating external level shifter.	Use Scenario: High-current load switch in 48 V battery storage systems with active overcurrent and short-circuit protection. IC Role / Device Role / Timing Role: Main power path switch controlled by protection IC with fast turn-off (<100 ns) requirement. Use Value: 400 A pulsed drain current (I_DM) and 125 mJ avalanche energy (E_AS) withstand fault currents during protection activation.

Solar Micro Inverter

Industrial Motor Drive

Use Scenario: High-efficiency DC–AC conversion in distributed photovoltaic systems with compact form factor and passive cooling.

IC Role / Device Role / Timing Role: Primary-side high-side switch in interleaved half-bridge topology operating at 100–200 kHz.

Use Value: Ultra-low R_DS(on) and Q_g minimize conduction and switching losses, achieving >98.5 % peak efficiency at 300 W per channel.

Use Scenario: Three-phase inverter stage for servo and BLDC motors in factory automation equipment.

IC Role / Device Role / Timing Role: Low-side switching element in 60 V rail systems with PWM frequencies up to 40 kHz.

Use Value: 204 A I_D rating and 0.8 °C/W R_thJC allow sustained 150 A output without forced air, reducing heatsink size by 40 %.

Server VRM / POL Converter

Battery Protection Switch

Use Scenario: Point-of-load regulation in AI accelerator racks requiring fast transient response and <10 mΩ total path resistance.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter with 30–500 kHz operation.

Use Value: 2.1 mΩ R_DS(on) @ 4.5 V enables direct drive from controller's integrated gate driver, eliminating external level shifter.

Use Scenario: High-current load switch in 48 V battery storage systems with active overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: Main power path switch controlled by protection IC with fast turn-off (<100 ns) requirement.

Use Value: 400 A pulsed drain current (I_DM) and 125 mJ avalanche energy (E_AS) withstand fault currents during protection activation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1407PBF	R_DS(on) = 4.8 mΩ @ 10 V; TO-220 package; no top-side cooling; Q_g = 120 nC	Higher conduction loss and slower switching; requires heatsink mounting and gate driver buffering	Preferred only when through-hole assembly or legacy footprint compatibility is required
SiR626DP-T1-RE3	Same die but in PowerPAK® 8x8 package; R_DS(on) identical; higher thermal mass; larger footprint (8 mm × 8 mm)	Better steady-state thermal performance but incompatible with space-constrained SO-8 layouts	Select when board area permits and junction temperature margin must exceed 130 °C under 180 A continuous load

Compared with IRF1407PBF, SIDR626LDP-T1-RE3 delivers 3.2× lower R_DS(on) and 35 % less Q_g, enabling higher efficiency and smaller magnetics; versus SiR626DP-T1-RE3, it trades 25 % higher R_thJA for 56 % smaller footprint and identical electrical specs-ideal for dense, thermally managed PCBs.

Availability

SIDR626LDP-T1-RE3 is available at Aetrix Electronics and suitable for solar micro inverter, industrial motor drive, and server VRM applications requiring stable component supply, long-term manufacturability, and consistent parametric performance across production lots.

Supply support for SIDR626LDP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIDR626LDP-T1-RE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-current, high-frequency power conversion in renewable energy, industrial automation, and datacenter infrastructure.

FAQ

What is the maximum continuous drain current rating for SIDR626LDP-T1-RE3 at 70 °C case temperature?

The SIDR626LDP-T1-RE3 supports 163 A continuous drain current (I_D) at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8DC package under realistic board-level cooling conditions and is validated by Vishay's thermal characterization using a 1" × 1" FR4 test board.

Does SIDR626LDP-T1-RE3 support 4.5 V gate drive in high-current applications?

Yes, SIDR626LDP-T1-RE3 is fully characterized at V_GS = 4.5 V, with R_DS(on) = 2.1 mΩ (max) and I_D = 204 A achievable under proper thermal management. Its V_GS(th) range (1.0–2.5 V) and low gate charge (41 nC typ.) ensure reliable enhancement with standard 4.5 V logic drivers without external boosting circuitry.

How does the top-side cooling feature of SIDR626LDP-T1-RE3 improve thermal performance?

The top-side cooling feature of SIDR626LDP-T1-RE3 uses an exposed copper drain pad on the package's upper surface, allowing direct thermal interface to a heatsink or thermal pad. This reduces effective R_thJA by up to 30 % compared to bottom-only cooled equivalents and lowers peak junction temperature by 15–20 °C in 150 A continuous operation on 2 oz. copper PCBs.

Is SIDR626LDP-T1-RE3 suitable for synchronous rectification in LLC resonant converters?

Yes, SIDR626LDP-T1-RE3 is well-suited for synchronous rectification in LLC converters due to its low V_SD (0.71 V typ.), fast body diode recovery (t_rr = 54 ns), and low Q_rr (70 nC). These parameters minimize dead-time conduction loss and prevent shoot-through risk when paired with precise gate timing control.

What is the avalanche energy rating for SIDR626LDP-T1-RE3, and how is it tested?

SIDR626LDP-T1-RE3 is rated for 125 mJ single-pulse avalanche energy (E_AS) at L = 0.1 mH, measured per JEDEC JESD24-11. Each unit undergoes 100 % unclamped inductive switching (UIS) testing during production, ensuring robustness against inductive load transients in motor drives and DC/DC converters.

SIDR626LDP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 45.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 135 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5900 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8DC

SIDR626LDP-T1-RE3 FAQ

1.How can I place an order for SIDR626LDP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDR626LDP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDR626LDP-T1-RE3 reliable?

The price and inventory of SIDR626LDP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR626LDP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIDR626LDP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR626LDP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDR626LDP-T1-RE3?

SIDR626LDP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDR626LDP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDR626LDP-T1-RE3?

For technical support, including SIDR626LDP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR626LDP-T1-RE3 requirements.

6.How does Aetrix verify that SIDR626LDP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIDR626LDP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR626LDP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIDR626LDP-T1-RE3?

All SIDR626LDP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR626LDP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDR626LDP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIDR626LDP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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