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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIDR638DP-T1-GE3

Name: SIDR638DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIDR638DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIDR638DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIDR638DP-T1-GE3.pdf

Description:: MOSFET N-CH 40V 100A PPAK SO-8DC

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Product details

Overview

SIDR638DP-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8DC package, delivering R_DS(on) = 0.00088 Ω at V_GS = 10 V, Q_g = 63 nC (at 4.5 V), and 100 A continuous drain current at T_C = 25 °C - optimized for high-efficiency synchronous rectification and OR-ing in DC/DC converters.

For engineers reviewing the SIDR638DP-T1-GE3 datasheet, SIDR638DP-T1-GE3 pinout, SIDR638DP-T1-GE3 application, or SIDR638DP-T1-GE3 equivalent, this device offers top-side cooling capability, 100 % R_g and UIS tested reliability, and a low R_DS(on)–Q_oss figure-of-merit critical for high-frequency switching in server VRMs and battery protection circuits.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology with tuned gate charge distribution to minimize conduction and switching losses simultaneously. Its R_DS(on)–Q_oss FOM is specifically optimized for hard-switched and synchronous rectifier topologies operating above 300 kHz.

The PowerPAK® SO-8DC package features exposed copper drain pads on both top and bottom surfaces, enabling dual-sided thermal management. The device supports gate drive voltages from 4.5 V to 10 V, with V_GS(th) = 1.1–2.3 V and body diode t_rr = 59–118 ns under specified conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - maximum blocking voltage compatible with 12 V and 24 V input bus systems
R_DS(on) max @ V_GS = 10 V	0.00088 Ω - enables <1 W conduction loss at 33 A in 48 V output VRMs
Q_g typ. @ V_GS = 4.5 V	63 nC - supports efficient 500 kHz–1 MHz operation with moderate gate driver strength
I_D continuous @ T_C = 25 °C	100 A - rated for high-current power stages without external heatsink when mounted on 1" × 1" FR4
R_thJC (drain)	0.8–1.0 °C/W - enables direct thermal coupling to PCB copper or heatsink via top-side cooling pad
V_SD @ I_S = 10 A	0.74–1.1 V - low forward drop improves reverse recovery behavior in synchronous rectifier mode
E_AS	125 mJ - robust avalanche energy rating supports reliable operation during transient overvoltage events

Pinout & Package

Package: PowerPAK® SO-8DC - leadless, double-cooling surface-mount package with exposed drain terminals on top and bottom surfaces; dimensions 6.15 mm × 5.15 mm × 0.56 mm (L × W × H); RoHS-compliant and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Internally connected drain terminals - provide low-inductance, high-current path and dual-side thermal interface
5	Source (S)	Main source connection - used for current return and gate reference in half-bridge configurations
6	Gate (G)	Control terminal - requires ≤20 V drive; gate resistance R_g = 0.3–1.5 Ω ensures stable switching with minimal ringing

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers best-in-class R_DS(on)–Q_g and R_DS(on)–Q_oss trade-offs for high-frequency DC/DC efficiency
Top-side cooling capability	Enables >30 % additional thermal dissipation via exposed top drain pad - critical for compact VRM layouts
100 % R_g and UIS tested	Guarantees gate robustness and single-pulse avalanche survivability across full production lot
Low Crss/Ciss ratio (0.024–0.048)	Reduces Miller-induced turn-on risk in high-dV/dt environments like motor drives and fast-switching converters
Body diode t_rr = 59 ns (typ.)	Minimizes reverse recovery loss and EMI in synchronous rectifier applications at ≥500 kHz

Applications

Server VRM Synchronous Rectifier	OR-ing Diode Replacement
Use Scenario: High-current 48 V → 12 V or 12 V → 1 V point-of-load converter in AI accelerator servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch replacing Schottky diodes in multiphase buck converters. Use Value: Reduces conduction loss by >60 % vs. 40 V Schottky, enabling >95 % efficiency at 100 A output with minimal thermal margin.	Use Scenario: Redundant 12 V power supply backplane where two supplies feed a common bus. IC Role / Device Role / Timing Role: Active OR-ing switch controlling current flow direction and preventing backfeed between supplies. Use Value: Eliminates 0.3–0.5 V forward drop of discrete diodes, reducing power loss and heat generation in 50–100 A bus lines.
Battery Protection Switch	Motor Drive Half-Bridge
Use Scenario: Smart battery pack with integrated protection IC managing charge/discharge paths for Li-ion cells. IC Role / Device Role / Timing Role: Load switch isolating battery terminals during overcurrent, short-circuit, or thermal fault conditions. Use Value: Supports 100 A continuous load current with <0.1 V drop at full rating - preserves battery runtime and simplifies thermal design.	Use Scenario: 24 V BLDC motor control in industrial automation, requiring high peak current and fast PWM switching. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter half-bridge stage, driven by isolated gate driver. Use Value: Enables 100 kHz PWM with <100 ns fall time and low Q_gd/Q_gs ratio - reduces shoot-through risk and switching loss.

Server VRM Synchronous Rectifier

OR-ing Diode Replacement

Use Scenario: High-current 48 V → 12 V or 12 V → 1 V point-of-load converter in AI accelerator servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch replacing Schottky diodes in multiphase buck converters.

Use Value: Reduces conduction loss by >60 % vs. 40 V Schottky, enabling >95 % efficiency at 100 A output with minimal thermal margin.

Use Scenario: Redundant 12 V power supply backplane where two supplies feed a common bus.

IC Role / Device Role / Timing Role: Active OR-ing switch controlling current flow direction and preventing backfeed between supplies.

Use Value: Eliminates 0.3–0.5 V forward drop of discrete diodes, reducing power loss and heat generation in 50–100 A bus lines.

Battery Protection Switch

Motor Drive Half-Bridge

Use Scenario: Smart battery pack with integrated protection IC managing charge/discharge paths for Li-ion cells.

IC Role / Device Role / Timing Role: Load switch isolating battery terminals during overcurrent, short-circuit, or thermal fault conditions.

Use Value: Supports 100 A continuous load current with <0.1 V drop at full rating - preserves battery runtime and simplifies thermal design.

Use Scenario: 24 V BLDC motor control in industrial automation, requiring high peak current and fast PWM switching.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter half-bridge stage, driven by isolated gate driver.

Use Value: Enables 100 kHz PWM with <100 ns fall time and low Q_gd/Q_gs ratio - reduces shoot-through risk and switching loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	R_DS(on) = 0.0012 Ω @ 10 V; Q_g = 42 nC; PowerSO-8 package; no top-side cooling	Higher R_DS(on) increases conduction loss; lower Q_g eases gate drive but lacks dual thermal path	Prefer when board space is constrained and thermal budget allows higher junction temperature rise
NTMFS5C678NLT1G	R_DS(on) = 0.00075 Ω @ 10 V; Q_g = 72 nC; SO-8FL package; only bottom-side cooling	Marginally lower R_DS(on) but higher Q_g and no top-side thermal interface - limits high-frequency efficiency	Choose when ultra-low R_DS(on) dominates over switching loss and thermal management flexibility

Compared with IRF6642TRPBF and NTMFS5C678NLT1G, the SIDR638DP-T1-GE3 uniquely combines sub-0.9 mΩ R_DS(on), 63 nC Q_g at 4.5 V, and top-side cooling - making it optimal for thermally dense, high-frequency synchronous rectifier designs where both conduction and thermal performance are critical.

Availability

SIDR638DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, redundant power OR-ing, battery protection switches, motor drive inverters, and industrial DC/DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIDR638DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIDR638DP-T1-GE3 belongs to Vishay's TrenchFET® Gen IV PowerPAK® SO-8DC family, engineered specifically for high-current, high-frequency power conversion in datacenter, industrial, and automotive auxiliary systems.

FAQ

What is the maximum continuous drain current rating for SIDR638DP-T1-GE3 at 70 °C case temperature?

The SIDR638DP-T1-GE3 supports 100 A continuous drain current at T_C = 70 °C, as confirmed in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal vias per Vishay's recommended layout for the PowerPAK® SO-8DC package. Derating is not required up to 70 °C case temperature due to its low R_thJC and dual-side cooling architecture.

Does SIDR638DP-T1-GE3 support 4.5 V gate drive in high-efficiency synchronous rectifier applications?

Yes, the SIDR638DP-T1-GE3 is fully characterized at V_GS = 4.5 V, with R_DS(on) = 0.00116 Ω (max) and Q_g = 63 nC (typ.). Its V_GS(th) range of 1.1–2.3 V ensures robust turn-on with standard 4.5 V logic-level gate drivers, making it suitable for synchronous rectification in 5 V–12 V control rail systems.

How does the top-side cooling feature of SIDR638DP-T1-GE3 improve thermal performance compared to standard SO-8 devices?

The SIDR638DP-T1-GE3 exposes copper drain terminals on both top and bottom surfaces of the PowerPAK® SO-8DC package. This allows heat to be extracted from the die through either side - increasing total thermal dissipation capacity by up to 35 % versus bottom-only packages. Measured R_thJA drops to 15 °C/W (typ.) with proper top-side heatsinking, directly lowering T_J under high-current operation.

Is SIDR638DP-T1-GE3 suitable for avalanche-rated applications such as inductive load switching?

Yes, the SIDR638DP-T1-GE3 is 100 % tested for Unclamped Inductive Switching (UIS) and specifies single-pulse avalanche energy E_AS = 125 mJ and I_AS = 50 A. These ratings validate its ability to safely absorb inductive energy during turn-off transients in motor drive and solenoid control applications without degradation.

What is the body diode reverse recovery charge (Q_rr) of SIDR638DP-T1-GE3, and why does it matter in synchronous rectifier use?

The SIDR638DP-T1-GE3 has Q_rr = 85–1700 nC (typ.–max) at I_F = 20 A, dI/dt = 100 A/μs, and T_J = 25 °C. Low Q_rr minimizes reverse recovery current spikes and associated switching loss and EMI in synchronous rectifier mode - especially critical in high-frequency (>500 kHz) DC/DC converters where body diode conduction occurs during dead-time intervals.

SIDR638DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.88mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 204 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 10500 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8DC

SIDR638DP-T1-GE3 FAQ

1.How can I place an order for SIDR638DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDR638DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDR638DP-T1-GE3 reliable?

The price and inventory of SIDR638DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR638DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIDR638DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR638DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDR638DP-T1-GE3?

SIDR638DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDR638DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDR638DP-T1-GE3?

For technical support, including SIDR638DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR638DP-T1-GE3 requirements.

6.How does Aetrix verify that SIDR638DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIDR638DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR638DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIDR638DP-T1-GE3?

All SIDR638DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR638DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDR638DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SIDR638DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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