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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIDR638DP-T1-RE3

Name: SIDR638DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIDR638DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIDR638DP-T1-RE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SIDR638DP-T1-RE3.pdf

Description:: N-CHANNEL 40-V (D-S) MOSFET

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Product details

Overview

SIDR638DP-T1-RE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SO-8DC package, delivering R_DS(on) = 0.00088 Ω at V_GS = 10 V, Q_g = 63 nC (at V_GS = 4.5 V), and 100 A continuous drain current (T_C = 25 °C), optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SIDR638DP-T1-RE3 datasheet, SIDR638DP-T1-RE3 pinout, SIDR638DP-T1-RE3 application, or SIDR638DP-T1-RE3 equivalent, this device is selected for low-R_DS(on)/Q_g FOM, top-side cooling capability, and 100% R_g and UIS testing - critical for high-density power stages requiring thermal robustness and avalanche reliability.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology with tuned gate charge distribution to minimize both R_DS(on) × Q_g and R_DS(on) × Q_oss figures of merit. Its double-cooling PowerPAK SO-8DC package enables simultaneous thermal conduction through drain (top side) and source (bottom side), supporting higher power density than standard SO-8 variants.

The device features a gate-source threshold voltage (V_GS(th)) of 1.1–2.3 V, body diode reverse recovery time (t_rr) of 59–118 ns, and Cr_ss/C_iss ratio of 0.024–0.048 - parameters directly enabling fast switching, reduced switching losses, and stable operation in hard-switched and synchronous rectifier topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - maximum blocking voltage compatible with 12 V and 24 V input bus systems in industrial and telecom DC/DC converters
R_DS(on) max @ V_GS = 10 V	0.00088 Ω - enables ≤ 35 mW conduction loss at 20 A, critical for <95% efficiency targets in high-current POLs
Q_g typ @ V_GS = 4.5 V	63 nC - low gate charge supports efficient drive from standard PWM controllers without external gate drivers
I_D continuous @ T_C = 25 °C	100 A - high current rating allows single-device implementation in 50–100 A output stages
R_thJC (drain)	0.8–1.0 °C/W - low junction-to-case thermal resistance enables direct heatsinking to PCB copper or metal-core substrates
t_rr & Q_rr	59 ns / 85–1700 nC - fast, controlled body diode recovery reduces cross-conduction loss and EMI in synchronous rectifiers
V_SD @ I_S = 10 A	0.74–1.1 V - low forward voltage minimizes reverse conduction loss during dead-time intervals

Pinout & Package

Package: PowerPAK® SO-8DC - leadless, double-sided cooling package with exposed drain (top) and source (bottom) terminals; dimensions 6.15 mm × 5.15 mm × 0.56 mm (L × W × H); RoHS-compliant, halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (Bottom)	Source (S)	Low-impedance bottom-side source connection for return path and thermal conduction to PCB ground plane
5, 6, 7, 8 (Top)	Drain (D)	Exposed top-side drain pad enabling direct thermal interface to heatsink or thermal via array
4 (Top edge)	Gate (G)	Single gate terminal located at corner for minimized loop inductance; requires <1.5 Ω gate resistance for optimal switching

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Enables industry-leading R_DS(on) × Q_g FOM of 55.4 Ω·nC (0.00088 Ω × 63 nC), reducing total switching + conduction loss
Top-side cooling architecture	Allows >50% additional thermal dissipation path via exposed top drain, increasing power handling by up to 30% vs. standard SO-8
100% R_g and UIS tested	Guarantees gate resistance consistency (0.3–1.5 Ω) and unclamped inductive switching ruggedness (E_AS = 125 mJ)
Optimized Cr_ss/C_iss ratio	0.024–0.048 ensures stable Miller plateau behavior and reduced risk of false turn-on in high-dV/dt environments
Low V_GS(th) variation	ΔV_GS(th)/T_J = −5.4 mV/°C enables predictable turn-on timing across −55 to +150 °C operating range

Applications

Synchronous Rectification	OR-ing Circuit
Use Scenario: High-current secondary-side rectification in isolated 48 V–12 V buck-derived DC/DC converters for server VRMs and AI accelerators. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; switched complementary to primary-side MOSFET with precise dead-time control. Use Value: Reduces conduction loss by >60% vs. 40 V Schottky, enabling >96% peak efficiency at 80 A load with 10 °C lower MOSFET temperature rise.	Use Scenario: Redundant 12 V power supply combining from two independent sources in telecom shelf management systems. IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET acting as ideal diode; driven by dedicated OR-ing controller (e.g., LTC4359). Use Value: Eliminates 0.4–0.7 V diode drop, reducing power loss by 4–7 W per rail and enabling hot-swap capability without thermal derating.
Motor Drive Half-Bridge	Battery Protection Switch
Use Scenario: Low-side switch in 24 V brushed DC motor drivers for industrial automation actuators and robotic joints. IC Role / Device Role / Timing Role: PWM-controlled low-side switch in half-bridge topology; handles bidirectional current during regeneration. Use Value: Withstands 50 A pulsed current (I_DM = 400 A) and 50 A avalanche current (I_AS = 50 A), ensuring robustness against inductive kickback and stall conditions.	Use Scenario: Main battery disconnect switch in 36 V e-bike battery packs with integrated protection ICs (e.g., BQ769x2). IC Role / Device Role / Timing Role: Load switch controlling main discharge path; activated only after overcurrent, overtemperature, and cell imbalance checks pass. Use Value: R_DS(on) of 0.00088 Ω limits voltage drop to <9 mV at 10 A, preserving state-of-charge accuracy and minimizing self-heating during continuous 30 A operation.

Synchronous Rectification

OR-ing Circuit

Use Scenario: High-current secondary-side rectification in isolated 48 V–12 V buck-derived DC/DC converters for server VRMs and AI accelerators.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; switched complementary to primary-side MOSFET with precise dead-time control.

Use Value: Reduces conduction loss by >60% vs. 40 V Schottky, enabling >96% peak efficiency at 80 A load with 10 °C lower MOSFET temperature rise.

Use Scenario: Redundant 12 V power supply combining from two independent sources in telecom shelf management systems.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET acting as ideal diode; driven by dedicated OR-ing controller (e.g., LTC4359).

Use Value: Eliminates 0.4–0.7 V diode drop, reducing power loss by 4–7 W per rail and enabling hot-swap capability without thermal derating.

Motor Drive Half-Bridge

Battery Protection Switch

Use Scenario: Low-side switch in 24 V brushed DC motor drivers for industrial automation actuators and robotic joints.

IC Role / Device Role / Timing Role: PWM-controlled low-side switch in half-bridge topology; handles bidirectional current during regeneration.

Use Value: Withstands 50 A pulsed current (I_DM = 400 A) and 50 A avalanche current (I_AS = 50 A), ensuring robustness against inductive kickback and stall conditions.

Use Scenario: Main battery disconnect switch in 36 V e-bike battery packs with integrated protection ICs (e.g., BQ769x2).

IC Role / Device Role / Timing Role: Load switch controlling main discharge path; activated only after overcurrent, overtemperature, and cell imbalance checks pass.

Use Value: R_DS(on) of 0.00088 Ω limits voltage drop to <9 mV at 10 A, preserving state-of-charge accuracy and minimizing self-heating during continuous 30 A operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR626DP-T1-RE3	R_DS(on) = 0.00115 Ω @ 10 V (30% higher), Q_g = 52 nC @ 4.5 V (17% lower), same PowerPAK SO-8DC package	Lower gate charge favors higher-frequency operation (>1 MHz), but higher R_DS(on) increases conduction loss above 30 A	Select SiR626DP-T1-RE3 when optimizing for switching loss dominance in 500 kHz–2 MHz converters with <50 A load
IRFH8326TRPBF	R_DS(on) = 0.00095 Ω @ 10 V, Q_g = 72 nC @ 4.5 V, PQFN 5×6 mm package with bottom-side cooling only	No top-side cooling; R_thJC = 1.2 °C/W (vs. 0.8 °C/W) limits thermal headroom in constrained layouts	Choose IRFH8326TRPBF only if board layout prohibits top-side heatsinking and gate drive can support higher Q_g

Compared with SiR626DP-T1-RE3, SIDR638DP-T1-RE3 delivers superior conduction efficiency above 40 A due to lower R_DS(on), while versus IRFH8326TRPBF it provides 25% better thermal performance via dual-sided cooling - making SIDR638DP-T1-RE3 optimal for thermally dense, high-current synchronous rectifier designs.

Availability

SIDR638DP-T1-RE3 is available at Aetrix Electronics and suitable for synchronous rectification, OR-ing circuits, and motor drive control requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and telecom infrastructure programs.

Supply support for SIDR638DP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The PowerPAK SO-8DC product line was developed to address thermal bottlenecks in high-current power conversion, combining TrenchFET silicon with double-sided cooling to enable next-generation DC/DC and motor drive designs.

FAQ

What is the maximum continuous drain current rating for SIDR638DP-T1-RE3 at 70 °C case temperature?

The maximum continuous drain current for SIDR638DP-T1-RE3 is 100 A at T_C = 70 °C, as specified in the Absolute Maximum Ratings table under "Continuous drain current (T_J = 150 °C)" with footnote "a". This rating assumes proper PCB thermal design with adequate copper area and thermal vias to maintain case temperature at or below 70 °C.

Does SIDR638DP-T1-RE3 support 4.5 V gate drive in high-current applications?

Yes, SIDR638DP-T1-RE3 is fully characterized at V_GS = 4.5 V, with R_DS(on) = 0.00116 Ω (max) and Q_g = 63 nC (typ). This enables reliable enhancement-mode operation with standard 5 V logic-level controllers, maintaining <120 mW conduction loss at 10 A and supporting efficient switching in 3.3 V–5 V gate-drive systems.

How does the top-side cooling feature of SIDR638DP-T1-RE3 improve thermal performance?

The PowerPAK SO-8DC package of SIDR638DP-T1-RE3 exposes the drain on the top surface, allowing direct thermal interface to a heatsink or thermal pad. This reduces effective R_thJA by up to 40% compared to bottom-only cooling, enabling 20–30% higher power dissipation before reaching T_J = 150 °C - critical for compact, high-power-density designs.

Is SIDR638DP-T1-RE3 suitable for avalanche energy handling in motor drive applications?

Yes, SIDR638DP-T1-RE3 is rated for single-pulse avalanche energy E_AS = 125 mJ and avalanche current I_AS = 50 A (L = 0.1 mH). These values are validated per JEDEC standards and support safe operation during inductive load switching transients in brushed DC and stepper motor drives without external snubbers.

What is the body diode reverse recovery charge (Q_rr) specification for SIDR638DP-T1-RE3?

The body diode reverse recovery charge Q_rr for SIDR638DP-T1-RE3 is 85–1700 nC, measured at I_F = 20 A, dI/dt = 100 A/μs, and T_J = 25 °C. This tightly bounded Q_rr range ensures predictable commutation loss and minimal voltage overshoot during synchronous rectifier dead-time transitions.

SIDR638DP-T1-RE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 64.6A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.88mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 204 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 10500 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 6.25W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8DC

SIDR638DP-T1-RE3 FAQ

1.How can I place an order for SIDR638DP-T1-RE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDR638DP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDR638DP-T1-RE3 reliable?

The price and inventory of SIDR638DP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDR638DP-T1-RE3 is usually 5 days.

3.What payment methods are accepted for SIDR638DP-T1-RE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDR638DP-T1-RE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDR638DP-T1-RE3?

SIDR638DP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDR638DP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDR638DP-T1-RE3?

For technical support, including SIDR638DP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDR638DP-T1-RE3 requirements.

6.How does Aetrix verify that SIDR638DP-T1-RE3 is sourced from the original manufacturer or authorized distributors?

All SIDR638DP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDR638DP-T1-RE3 meets industry standards.

7.What is the process for return or replacement of SIDR638DP-T1-RE3?

All SIDR638DP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDR638DP-T1-RE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDR638DP-T1-RE3 part is unused and in its original packaging.

Return procedure for SIDR638DP-T1-RE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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